VISHAY LS103B

LS103A, LS103B, LS103C
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• Integrated protection ring against static
discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
9612009
Applications
Mechanical Data
•
•
•
•
Case: QuadroMELF SOD-80
Weight: approx. 34 mg
Cathode band color: black
Packaging codes/options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
HF-Detector
Protection circuit
Small battery charger
AC-DC / DC-DC converters
Parts Table
Part
Type differentiation
Ordering code
Remarks
LS103A
VR = 40 V
LS103A-GS18 or LS103A-GS08
Tape and Reel
LS103B
VR = 30 V
LS103B-GS18 or LS103B-GS08
Tape and Reel
LS103C
VR = 20 V
LS103C-GS18 or LS103C-GS08
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Peak forward surge current
Part
Symbol
Value
Unit
LS103A
VR
40
V
LS103B
VR
30
V
LS103C
VR
20
V
IFSM
15
A
Ptot
400
mW
tp = 300 µs, square pulse
Power dissipation
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
Document Number 85631
Rev. 1.4, 05-Aug-10
Test condition
Symbol
Value
Unit
On PC board
50 mm x 50 mm x 1.6 mm
RthJA
250
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
LS103A, LS103B, LS103C
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IR = 10 µA
Reverse Breakdown Voltage
VR = 30 V
Leakage current
Part
Symbol
Min
LS103A
V(BR)
40
V
LS103B
V(BR)
30
V
LS103C
V(BR)
20
LS103A
IR
5
µA
Diode capacitance
Reverse recovery time
Max
Unit
µA
V
VR = 20 V
LS103B
IR
5
VR = 10 V
LS103C
IR
5
µA
VF
370
mV
600
mV
IF = 20 mA
Forward voltage drop
Typ.
IF = 200 mA
VF
VR = 0 V, f = 1 MHz
CD
50
pF
IF = IR = 50 to 200 mA,
recover to 0.1 IR
trr
10
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
10 000
IR - Reverse Current (µA)
IF - Forward Current (mA)
100
10
1
0.1
0.01
1000
100
10
0.001
1
0
0 100 200 300 400 500 600 700 800 900 1000
20
16767
VF - Forward Voltage (mV)
16765
Figure 1. Forward Current vs. Forward Voltage
40
60
80
100
120
140
160
Tj - Junction Temperature (°C)
Figure 3. Reverse Current vs. Junction Temperature
5
30
CD - Diode Capacitance (pF)
IF - Forward Current (A)
f = 1 MHz
4
3
2
1
25
20
15
10
0
0
0.0
16766
0.5
1.0
1.5
www.vishay.com
0
2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
2
5
16768
5
10
15
20
25
30
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following: Document Number 85631
[email protected], [email protected], [email protected]
Rev. 1.4, 05-Aug-10
LS103A, LS103B, LS103C
Vishay Semiconductors
Itot - Typ. Non Repetitve
Forward Surge Current (A)
25
20
15
10
5
0
0.1
16769
1.0
10.0
tP - Pulse width (ms)
Figure 5. Typ. Non Repetitive Forward Surge Current vs.
Pulse width
Package Dimensions in millimeters (inches): QuadroMELF SOD-80
12071
Document Number 85631
Rev. 1.4, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
QuadroMELF SOD80
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches)
1.6 (0.063)
1.4 (0.055)
1.
7
(0
.0
gl
as 67)
s
Cathode identification
> R3 (R0.118)
glass
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
2.5 (0.098) max.
2 (0.079) min.
1.25 (0.049) min.
5 (0.197) ref.
96 12071
Document Number: 84025
Rev. 1.2, 12-Jan-07
For technical questions, contact: [email protected]
www.vishay.com
1
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Vishay
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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