FREESCALE MMA20312BV

Freescale Semiconductor
Technical Data
Document Number: MMA20312BV
Rev. 1, 12/2011
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMA20312BVT1
High Efficiency/Linearity Amplifier
The MMA20312BV is a 2-- stage high efficiency, Class AB InGaP HBT
amplifier designed for use as a linear driver amplifier in wireless base station
applications as well as an output stage in femtocell or repeater applications. It
is suitable for applications with frequencies from 1800 to 2200 MHz such as
CDMA, TD--SCDMA, PCS, UMTS and LTE at operating voltages from 3 to
5 Volts. The amplifier is housed in a cost--effective, surface mount QFN plastic
package.
1800--2200 MHz, 27.2 dB
30.5 dBm
InGaP HBT
• Typical Performance: VCC = 5 Volts, ICQ = 70 mA, Pout = 17 dBm
Frequency
Gps
(dB)
ACPR
(dBc)
PAE
(%)
Test Signal
1880 MHz
29.0
--47.4
9.1
TD--SCDMA
1920 MHz
29.0
--46.7
9.0
TD--SCDMA
2010 MHz
27.4
--52.0
9.3
TD--SCDMA
2025 MHz
26.8
--50.0
9.5
TD--SCDMA
2140 MHz
27.0
--51.7
9.4
W--CDMA
CASE 2131--01
QFN 3x3
PLASTIC
Features
• Frequency: 1800--2200 MHz
• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
• OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
• Active Bias Control (adjustable externally)
• Single 3 to 5 Volt Supply
• Cost--effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Table 1. Typical Performance (1)
Characteristic
Small--Signal Gain
(S21)
Table 2. Maximum Ratings
Rating
Symbol
1800
MHz
2140
MHz
2200
MHz
Unit
Gp
28.8
26.4
25.5
dB
Input Return Loss
(S11)
IRL
--17.6
--10.9
--9.7
dB
Output Return Loss
(S22)
ORL
--20.3
--14.7
--13.7
dB
Power Output @ 1dB
Compression
P1dB
30.5
30.5
30.5
dBm
Symbol
Value
Unit
Supply Voltage
VCC
6
V
Supply Current
ICC
550
mA
RF Input Power
Pin
14
dBm
Tstg
--65 to +150
°C
TJ
150
°C
Storage Temperature Range
Junction Temperature
(2)
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25°C, 50 ohm system, CW
Application Circuit
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 86°C, VCC1 = VCC2 = VBIAS = 5 Vdc
Symbol
Value (3)
Unit
RθJC
52
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BVT1
1
Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2140 MHz, TA = 25°C, 50 ohm system, in Freescale W--CDMA
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21) (1)
Gp
23.6
27.2
—
dB
Input Return Loss (S11)
IRL
—
--10.7
—
dB
Output Return Loss (S22)
ORL
—
--15.5
—
dB
Power Output @ 1dB Compression, CW
P1dB
—
28.2
—
dBm
Third Order Output Intercept Point, Two--Tone CW
OIP3
—
44.5
—
dBm
Noise Figure
NF
—
3.3
—
dB
Supply Current (1,2)
ICQ
62.5
70
77
mA
Supply Voltage (2)
VCC
—
5
—
V
Table 5. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
0, rated to 150 V
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 6. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
1. Specified data is based on performance of soldered down part in W--CDMA application circuit.
2. For reliable operation, the junction temperature should not exceed 150°C.
VBA2
VBA1
VCC1
VCC1
BIAS
CIRCUIT
RFout
VBIAS
RFin
VCC2
GND
VBA2 VCC1 VCC1
RFout
GND
12
11
10
VBA1
1
9
RFout
VBIAS
2
8
RFout
RFin
3
7
VCC2
4
5
6
GND GND GND
GND
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
MMA20312BVT1
2
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
Z5
R1
R2
VCC1
C8
Z4
12
C5
1
11
C17
C18
C19
10
9
BIAS
CIRCUIT
8
2
RF
OUTPUT
Z3
Z2
C4
C3
RF
INPUT
Z1
3
7
C1
C2
Z6
L1
4
5
VCC2
6
C13
Z1
Z2
Z3
0.250″ x 0.030″ Microstrip
0.035″ x 0.030″ Microstrip
0.283″ x 0.030″ Microstrip
Z4
Z5
Z6
C16
0.080″ x 0.030″ Microstrip
0.155″ x 0.010″ Microstrip
0.045″ x 0.010″ Microstrip
Figure 3. MMA20312BV Test Circuit Schematic — TD--SCDMA, 5 Volt Operation
Table 7. MMA20312BV Test Circuit Component Designations and Values — TD--SCDMA, 5 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5
22 pF Chip Capacitors
06033J220GBS
AVX
C2
1.8 pF Chip Capacitor
06035J1R8BBS
AVX
C3
2.2 pF Chip Capacitor
06035J2R2BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7, C9
Components Not Placed
C8, C18
1 μF Chip Capacitors
GRM188R61A105KA61
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16, C19
10 μF Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 μF Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
330 Ω Chip Resistor
RR0816Q--331--D
Susumu
R2
1.5 kΩ Chip Resistor
RR0816Q--152--D
Susumu
PCB
0.014″, εr = 3.7
FR408
Isola
Note: Component numbers C6, C7 and C9 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
3
VCC1
VBIAS(1)
C8
C19
R1
R2
C7*
C6*
C17 C18
C9*
RFOUT
RFIN
C5
C1
C2
L1
C3
C4
C13
C16
QFN 3x3--12B
Rev. 0
VCC2
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6*, C7* and C9* are labeled on board but not placed.
Figure 4. MMA20312BV Test Circuit Component Layout — TD--SCDMA, 5 Volt Operation
Table 7. MMA20312BV Test Circuit Component Designations and Values — TD--SCDMA, 5 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5
22 pF Chip Capacitors
06033J220GBS
AVX
C2
1.8 pF Chip Capacitor
06035J1R8BBS
AVX
C3
2.2 pF Chip Capacitor
06035J2R2BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7, C9
Components Not Placed
C8, C18
1 μF Chip Capacitors
GRM188R61A105KA61
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16, C19
10 μF Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 μF Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
330 Ω Chip Resistor
RR0816Q--331--D
Susumu
R2
1.5 kΩ Chip Resistor
RR0816Q--152--D
Susumu
PCB
0.014″, εr = 3.7
FR408
Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BVT1
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — TD--SCDMA
0
35
--5
30
--40°C
25
--15
S21 (dB)
S11 (dB)
--10
85°C
--20
25°C
--25
85°C
25°C
20
15
10
--30
--35
1500
--40°C
5
VCC1 = VCC2 = VBIAS = 5 Vdc
1750
2000
2250
2500
0
1500
2750
VCC1 = VCC2 = VBIAS = 5 Vdc
1750
2000
2250
2500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S21 versus Frequency versus
Temperature
2750
0
--5
--40°C
S22 (dB)
--10
85°C
--15
25°C
--20
--25
--30
--35
1500
VCC1 = VCC2 = VBIAS = 5 Vdc
1750
2000
2250
2500
2750
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency versus
Temperature
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — TD--SCDMA
200
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2017.5 MHz
--15
--20
180
160
140
ACPR (dBc)
--25
25°C
--30
--35
ICC
--40
120
85°C
--45
--50 ACPR
80
60
85°C
--40°C
40
--55
--60
100
--40°C
20
25°C
7
9
11
13
15
17
19
21
ICC, COLLECTOR CURRENT (mA)
--10
0
23
Pout, OUTPUT POWER (dBm)
Figure 8. ACPR versus Collector Current versus
Output Power versus Temperature
29
Gain
45
--40°C
40
Gps, POWER GAIN (dB)
28
27
35
25°C
26
25
30
25
85°C
24
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2017.5 MHz
23
20
--40°C
15
85°C
22
PAE
21
10
5
25°C
20
7
9
11
13
15
17
19
21
PAE, POWER ADDED EFFICIENCY (%)
50
30
0
23
Pout, OUTPUT POWER (dBm)
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
Figure 9. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
31
VCC1 = VCC2 = VBIAS = 5 Vdc
30
29
--40°C
28
25°C
27
85°C
26
25
24
1800
1850
1900
1950
2000
2050
f, FREQUENCY (MHz)
Figure 10. P1dB versus Frequency versus
Temperature, CW
MMA20312BVT1
6
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
Z5
R1
R2
Z4
12
C5
1
VCC1
C8
11
C9
C17
C18
C19
10
9
BIAS
CIRCUIT
2
8
Z3
Z2
C3
RF
INPUT
Z1
3
Z6
L1
4
5
VCC2
6
C13
Z1
Z2
Z3
C4
7
C1
C2
RF
OUTPUT
0.218″ x 0.030″ Microstrip
0.068″ x 0.030″ Microstrip
+
0.250″ x 0.030″ Microstrip
Z4
Z5
Z6
C16
0.080″ x 0.030″ Microstrip
0.155″ x 0.010″ Microstrip
0.045″ x 0.010″ Microstrip
Figure 11. MMA20312BV Test Circuit Schematic — W--CDMA, 5 Volt Operation
Table 8. MMA20312BV Test Circuit Component Designations and Values — W--CDMA, 5 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5
22 pF Chip Capacitors
06033J220GBS
AVX
C2, C3
1.8 pF Chip Capacitors
06035J1R8BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7
Components Not Placed
C8, C18
1 μF Chip Capacitors
GRM188R61A105KA61
Murata
C9
100 pF Chip Capacitor
GRM1885C1H101JA01
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16, C19
10 μF Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 μF Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
330 Ω Chip Resistor
RR0816Q--331--D
Susumu
R2
1500 Ω Chip Resistor
RR0816Q--152−D
Susumu
PCB
0.014″, εr = 3.7
FR408
Isola
Note: Component numbers C6 and C7 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
7
VCC1
R1
VBIAS(1)
C8
C19
R2
C7*
C9
C17 C18
C6*
RFIN
RFOUT
C5
C1
C2
C3
L1
C4
C13
C16
QFN 3x3--12B
Rev. 0
VCC2
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6* and C7* are labeled on board but not placed.
Figure 12. MMA20312BV Test Circuit Component Layout — W--CDMA, 5 Volt Operation
Table 8. MMA20312BV Test Circuit Component Designations and Values — W--CDMA, 5 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5
22 pF Chip Capacitors
06033J220GBS
AVX
C2, C3
1.8 pF Chip Capacitors
06035J1R8BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7
Components Not Placed
C8, C18
1 μF Chip Capacitors
GRM188R61A105KA61
Murata
C9
100 pF Chip Capacitor
GRM1885C1H101JA01
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16, C19
10 μF Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 μF Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
330 Ω Chip Resistor
RR0816Q--331--D
Susumu
R2
1500 Ω Chip Resistor
RR0816Q--152−D
Susumu
PCB
0.014″, εr = 3.7
FR408
Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BVT1
8
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — W--CDMA
200
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2140 MHz
--15
--20
180
160
140
ACPR (dBc)
--25
120
--30
ICC
--35
100
80
--40
--45
60
ACPR
--50
40
20
--55
--60
8
10
12
14
18
16
20
22
ICC, COLLECTOR CURRENT (mA)
--10
0
24
Pout, OUTPUT POWER (dBm)
Figure 13. ACPR versus Collector Current
versus Output Power
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2140 MHz
29
Gps, POWER GAIN (dB)
28
45
40
Gain
27
35
26
30
25
25
24
20
PAE
23
15
22
10
21
5
20
8
10
12
14
16
18
20
22
PAE, POWER ADDED EFFICIENCY (%)
50
30
0
24
Pout, OUTPUT POWER (dBm)
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
Figure 14. Power Gain versus Power Added
Efficiency versus Output Power
31
VCC1 = VCC2 = VBIAS = 5 Vdc
30
29
28
27
26
25
24
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 15. P1dB versus Frequency, CW
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
9
VBIAS
Z5
R1
R2
VCC1
C8
Z4
12
C5
1
11
C9
C17
10
9
BIAS
CIRCUIT
8
2
Z3
Z2
C3
RF
INPUT
Z1
3
Z6
L1
4
5
VCC2
6
C13
Z1
Z2
Z3
C4
7
C1
C2
RF
OUTPUT
0.250″ x 0.030″ Microstrip
0.124″ x 0.030″ Microstrip
0.195″ x 0.030″ Microstrip
Z4
Z5
Z6
C16
0.080″ x 0.030″ Microstrip
0.048″ x 0.010″ Microstrip
0.045″ x 0.010″ Microstrip
Figure 16. MMA20312BV Test Circuit Schematic — IS--95, 3.3 Volt Operation
Table 9. MMA20312BV Test Circuit Component Designations and Values — IS--95, 3.3 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5, C9
22 pF Chip Capacitors
06033J220GBS
AVX
C2
2.2 pF Chip Capacitor
06035J2R2BBS
AVX
C3
2.4 pF Chip Capacitor
06035J2R4BBS
AVX
C4
4.7 pF Chip Capacitor
06035J4R7BBS
AVX
C6, C7, C18, C19
Components Not Placed
C8, C17
1 μF Chip Capacitors
GRM188R61A105KA61
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16
4.7 μF Chip Capacitor
GRM188R60J106ME47
Murata
L1
1.5 nH Chip Inductor
LL1608--FS1N5S
TOKO
R1
82 Ω Chip Resistor
RR0816Q--820--D
Susumu
R2
510 Ω Chip Resistor
RR0816Q--511--D
Susumu
PCB
0.014″, εr = 3.7
FR408
Isola
Note: Component numbers C6, C7, C18 and C19 are labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BVT1
10
RF Device Data
Freescale Semiconductor, Inc.
VCC1
VBIAS(1)
C8
C19*
R1
R2
C7*
C6*
C9
C17 C18*
RFIN
RFOUT
C5
C1
C2
C3
L1
C4
C13
C16
QFN 3x3--12B
Rev. 0
VCC2
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component numbers C6*, C7*, C18* and C19* are labeled on board but not placed.
Figure 17. MMA20312BV Test Circuit Component Layout — IS--95, 3.3 Volt Operation
Table 9. MMA20312BV Test Circuit Component Designations and Values — IS--95, 3.3 Volt Operation
Part
Description
Part Number
Manufacturer
C1, C5, C9
22 pF Chip Capacitors
06033J220GBS
AVX
C2
2.2 pF Chip Capacitor
06035J2R2BBS
AVX
C3
2.4 pF Chip Capacitor
06035J2R4BBS
AVX
C4
4.7 pF Chip Capacitor
06035J4R7BBS
AVX
C6, C7, C18, C19
Components Not Placed
C8, C17
1 μF Chip Capacitors
GRM188R61A105KA61
Murata
C13
10 pF Chip Capacitor
06035J100GBS
AVX
C16
4.7 μF Chip Capacitor
GRM188R60J106ME47
Murata
L1
1.5 nH Chip Inductor
LL1608--FS1N5S
TOKO
R1
82 Ω Chip Resistor
RR0816Q--820--D
Susumu
R2
510 Ω Chip Resistor
RR0816Q--511--D
Susumu
PCB
0.014″, εr = 3.7
FR408
Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
11
TYPICAL CHARACTERISTICS — IS--95
200
VCC1 = VCC2 = VBIAS = 3.3 Vdc
f = 1960 MHz
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
--15
--20
ACPR (dBc)
--25
--30
--35
180
160
140
120
100
ICC
--40
80
--45
60
40
ACPR
--50
20
--55
--60
8
10
12
14
16
18
20
ICC, COLLECTOR CURRENT (mA)
--10
0
22
Pout, OUTPUT POWER (dBm)
Figure 18. ACPR versus Collector Current
versus Output Power
VCC1 = VCC2 = VBIAS = 3.3 Vdc
f = 1960 MHz
29
Gps, POWER GAIN (dB)
28
27
45
Gain
40
35
Single--Carrier IS--95, 9 Channel Forward
750 kHz Measurement Offset
30 kHz Measurement Bandwidth
26
25
30
25
24
20
PAE
23
15
22
10
21
5
20
8
10
12
14
16
18
20
PAE, POWER ADDED EFFICIENCY (%)
50
30
0
22
Pout, OUTPUT POWER (dBm)
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
Figure 19. Power Gain versus Power Added
Efficiency versus Output Power
31
30
VCC1 = VCC2 = VBIAS = 3.3 Vdc
29
28
27
26
25
24
1800
1840
1880
1920
1960
2000
f, FREQUENCY (MHz)
Figure 20. P1dB versus Frequency, CW
MMA20312BVT1
12
RF Device Data
Freescale Semiconductor, Inc.
3.00
0.70
0.30
2.00
3.40
0.50
1.6 x 1.6 Solder Pad
with Thermal Via
Structure
Figure 21. PCB Pad Layout for QFN 3x3
MA02
YWZ
Figure 22. Product Marking
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
13
PACKAGE DIMENSIONS
MMA20312BVT1
14
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
15
MMA20312BVT1
16
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2011
• Initial Release of Data Sheet
1
Dec. 2011
• Updated minimum operating voltage from 3.3 V to 3 V to reflect actual device capability, p. 1
• All references to “VCTRL” in the data sheet tables, test circuit schematics and component layouts is
replaced with “VBIAS”. VBIAS is the supply voltage which sets the internal bias conditions via pins 1, 2, and
12, p. 1--3, 5--7, 9, 10, 12. Footnote “(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]” added to
test circuit component layouts, p. 4, 8, 11.
MMA20312BVT1
RF Device Data
Freescale Semiconductor, Inc.
17
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
[email protected]p.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2011. All rights reserved.
MMA20312BVT1
Document Number: MMA20312BV
Rev. 1, 12/2011
18
RF Device Data
Freescale Semiconductor, Inc.