AMS AMS9013

IC
Transistors
SMD Type
AMS9013
NPN Transistors
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Excellent hFE linearity
0.4
3
Features
1
0.55
Collector Current :IC=0.5A
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
40
V
Collector - Emitter Voltage
VCEO
25
V
Emitter - Base Voltage
VEBO
5
V
Collector Current - Continuous
IC
500
mA
Collector Power Dissipation
PC
300
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
40
Unit
V
Collector - base breakdown voltage
VCBO
Ic= 100 A
Collector - emitter breakdown voltage
VCEO
Ic= 0.1mA
Emitter - base breakdown voltage
VEBO
IE=100 A
Collector cut - off current
ICBO
VCB=40 V , IE=0
0.1
A
Collector cut -off current
ICEO
VCE=20V , IB=0
0.1
A
Emitter cut - off current
IEBO
0.1
A
DC current gain
IE=0
IB=0
25
V
IC=0
5
V
VEB= 5V , IC=0
hFE
VCE=1V, IC= 50mA
120
VCE=1V, IC=500mA
40
Collector - emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50mA
Base - emitter saturation voltage
VBE(sat)
IC=500 mA, IB= 50mA
Transition frequency
VCE=6V, IC= 20mA,f=30MHz
fT
hFE Classification
J3
Marking
Rank
L
H
J
hFE
120 to 200
200 to 350
300 to 400
1
400
0.6
1.2
150
V
V
MHz
IC
Transistors
SMD Type
AMS9013
Typical Characteristics
Fig.1 Static Characteristic
Fig.2 DC Current Gain
Fig.4 Current Gain Bandwidth Product
Fig.3 Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
2