FAN7093_F085 High Current PN Half Bridge December 2011 FAN7093_F085 High Current PN Half Bridge Rectifier 47 A, Max path resistance 30.5 mΩ at 150 °C ©2011 Fairchild Semiconductor Corporation FAN7093_F085 Rev. C1 1 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 1 Features • Path resistance of max. 30.5 mΩ at 150 °C • Low quiescent current of max. 270 µA • PWM capability of up to 60 kHz combined with active freewheeling • Switched mode current limitation for reduced power dissipation in over current • Current limitation level of typical 46 A • Status flag diagnosis with low and high side current sense capability • Over temperature shut down with latch behavior • Shorted load protection with latch behavior • Over voltage lock out • Under voltage shut down • Driver circuit with logic level inputs • Typical slew rate of 1 V/µs with open SR pin • Adjustable slew rates for optimized EMI 2 TO263-7L Brief functional Description The FAN7093_F085 is an integrated high current half bridge for electric motor drive applications. It contains one P-channel highside MOSFET and one N-channel low-side MOSFET with an integrated control IC in one package. With the P-channel highside switch the need for a charge pump is eliminated and therefore minimizing EMI. Pins IN and are logic level inputs and control the half bridge outputs. The diagnostic current output pin IS outputs a proportional current through the half bridge MOSFETS. The IS pin output represents current for either the PChan or the N-Chan depending on which is active. The part is protected against short to Battery or ground, over current, overtemperature, over voltage and under voltage. The FAN7093_F085 provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. FAN7093_F085 Rev. C1 2 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 3 Block Diagram The FAN7093_F085 is a high current half-bridge and contains three separate chips in one package: One P-channel high-side MOSFET and one N-channel low-side MOSFET together with a control IC. All three chips are mounted on one common lead frame, using chip on chip and chip by chip technology. The power FETs are vertical MOS transistors to ensure minimum on state resistance. Using a P-channel high-side switch eliminates a charge pump and reduces EMI. A microcontroller is able to control the logic level inputs IN and of the half-bridge. The diagnostic pin IS is a current output stage which delivers a proportional current through the P-channel and N-channel MOSFETS depending on which is being activated with IN/ pin forcing conditions. In case of a short to VBATT or ground the IS pin acts as an error Flag, which can be detected as a logic high level through an attached microcontroller. In an over current situation the control IC turns off the MOSFETS and retries to turn them back on after a cool down time of typical 140us. The control IC protects the MOSFETS also against over voltage, under voltage and over temperature. The dead time to prevent shoot through between P- and N- channel MOSFET is generated by the control IC too. The slew rate of the outputs can be adjusted through an external resistor connected to the SR pin. The FAN7093_F085 can be combined with other FAN7093_F085 to form Full-bridge and also 3-phase drive configurations. Figure 1 FAN7093_F085 Block diagram FAN7093_F085 Rev. C1 3 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 4 Pin configuration 4.1 Pin assignment S P B Figure 2 Pin assignment for FAN7093_F085B, FAN7093_F085P and FAN7093_F085S 4.2 Pin Definitions and Functions Pin 1 2 Symbol GND IN I/O I 3 I 4,8 5 OUT SR O I 6 7 IS VBATT O - Function Ground Input Defines whether high- or lowside switch is activated Inhibit When set to low device goes in sleep mode and resets over temperature and HS and LS short latch Power output of the bridge Slew Rate The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND Current Sense and Diagnostics Supply Bold type pins need power wiring Note: See truth table in section 7.3.5 on page 14 for details FAN7093_F085 Rev. C1 4 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 5 General Product Characteristics 5.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Min. 5.1.1 Supply Voltage 5.1.2 5.1.3 Logic Input Voltage Voltage at SR Pin 5.1.4 Voltage at IS Pin VBATT VIN (H) VSR VIS ID(HS) ID(LS) ID(HS) ID(LS) ID(HS) ID(LS) 5.1.5 HS/LS Continuous Drain Current 5.1.6 HS/LS Pulsed Drain Current 5.1.7 HS/LS PWM Current 2) 2) Temperatures 5.1.8 Junction Temperature 5.1.9 Storage Temperature 2) Typ. Max. Unit Conditions -0.3 45 V – -0.3 -0.3 45 1.5 V V – – -0.3 7.5 V – -46/46 A TC < 85°C -90/90 A -55/55 A 150 150 °C °C TC < 85°C single pulse < 5us TC < 125°C f = 1kHz, DC = 50% Tj Tstg -40 -55 – – 5.1.10 IN, , SR, IS VESD -2 2 kV HBM 5.1.11 OUT, GND, VBATT VESD -6 6 kV HBM ESD Susceptibility 3) 3) 1) Not subject to production test, specified by design 2) Maximum reachable current may be smaller depending on current limitation level 3) ESD susceptibility, HBM according to AEC_Q100-004C /JESD22-A114-B (1.5 kΩ, 100 pF) Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation FAN7093_F085 Rev. C1 5 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 5.2 Pos. Functional Range Parameter 5.2.1 5.2.2 5.2.3 Symbol Limit Values Unit Conditions 18 V – 28 150 V °C Parameter deviations possible – Min. Max. 7 5.5 -40 VBATT(no Supply Voltage Range for nominal operation m) VVBATT( Supply Voltage Range for extended operation Junction Temperature ext) Tj Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table. 5.3 Pos. 5.3.1 5.3.3 5.3.1 4) Thermal Resistance 4 Parameter Thermal Resistance Junction-Case, Low Side Switch Rthjc(LS) = ∆Tj(LS)/ Pv(LS) Thermal Resistance Junction-Case, High Side Switch Rthjc(HS) = ∆Tj(HS)/ Pv(HS) Thermal Resistance Junction Ambient Symbol Rthjc(LS) Min. Typ. 0.8 Max. Unit °C/W Rthjc(HS) 0.45 °C/W RthJA 40 °C/W Conditions (1sq. inch cooling area) Not subject to production test, specified by design 6 Block Description and Characteristics 6.1 Supply Characteristics VBATT = 7 V to 18 V, T j = -40 C to +150 C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter 6.1.1 Supply Current Symbol Min. Typ. Max. Unit – -- 5.0 mA Conditions VINH = 5 V, VIN = 5V, RSR = 0 Ω, DC-mode, no fault condition – -- 450 µA VINH = 0 V, VIN = 0V, IVBATT(o n) IVBATT(o 6.1.2 Quiescent Current ff) 7 Power Stages The power stages of the FAN7093_F085 consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in the control die. Both switches can be operated up to 60 kHz, allowing active freewheeling and thus minimizing power dissipation in the forward operation of the FAN7093_F085 Rev. C1 6 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 integrated diodes. The on state resistance Rds(on) is dependent on the supply voltage VBATT as well as on the junction temperature Tj. 7.1 Power Stages - Static Characteristics VBATT = 7 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) High Side Switch - Static Characteristics Pos. Parameter Symbol 7.1.1 ON State High Side RDS(ON) Resistance5) HS IOUT = -20 A; VBATT = 14 V 7.1.2 Leakage Current ILeak(HS) 7.1.3 Reverse Diode ForwardVoltage6) Low Side Switch - Static Characteristics Pos. Parameter Symbol 7.1.4 ON State Low Side Resistance5) RDS(ON) LS IOUT = 20 A; VBATT = 14 V 7.1.5 Leakage Current ILeak(LS) 7.1.6 Reverse Diode Forward-Voltage6) Min. Typ. Max. 12.3 50.0 1.5 Min. Typ. Max. 18.2 10.0 -1.5 Unit mΩ Conditions FAN7093_F085B (TO-263-7L, D2PAK) µA V VINH = 0 V; VOUT = 0 V IOUT = -9 A Unit mΩ µA V Conditions FAN7093_F085B VINH = 0 V; VOUT = VBATT IOUT = 9 A Specified Rds(on) value is related to normal soldering points; Rds(on) values is specified for FAN7093_F085B: pin 1,7 to pin 8 (tab, backside) and for FAN7093_F085P/FAN7093_F085S: pin 1,7 to pin4 6) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR 5) FAN7093_F085 Rev. C1 7 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 7.1.1 Switching Times Figure 3 Timing diagram Due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse. 7.1.2 Power Stages - Dynamic Characteristics VBATT = 7V - 14 V, Tj = -40 °C to +150 °C, Rload = 2Ω all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) High Side Switch Dynamic Characteristics Pos. 7.1.7 Parameter Slew Rate (Note 1) Symbol VSlew(ON) 7.1.8 Turn On delay time Td(ON) Min. 15 12 5 0.8 Typ. 19 15 6 1 Max. 24 17 7 1.2 0.45 2.1 4.2 Unit V/µs Conditions RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = open Rload to GND µs Low Side Switch Dynamic Characteristics Pos. 7.1.9 Parameter Slew Rate (Note 1) Symbol VSlew(OFF) 7.1.10 Turn On delay time Td(ON) FAN7093_F085 Rev. C1 Min. 18 13 5 0.8 Typ. 21 17 6 1 0.45 2.1 8 Max. 24 19 7 1.2 4.2 Unit V/µs Conditions RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = open Rload to VBATT µs www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 Note 1: Not subject to production test 7.2 Protection Functions The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation. In a fault condition the FAN7093_F085 will apply the highest slew rate possible independent of the connected slew rate resistor. Over voltage, over temperature and over current are indicated by a fault current flag IIS(LIM) at the IS pin. The following describes the protection functions are listed in order of their priority. Over voltage lock out overrides all other error modes. 7.2.1 Over voltage Lock Out To assure a high immunity against over voltage conditions like load dump, the device turns off the low-side MOSFET and turns on the high-side MOSFET when the supply voltage exceeds the over voltage protection level VOV(OFF). The control IC returns to normal operation 120us after the supply voltage decreases below the over voltage lock out level VOV(ON) . In H-bridge configuration, this behavior of the FAN7093_F085 will lead to freewheeling in high-side during over voltage. If the load current exceeds 90A in over voltage lock out, the IC turns off the high side driver and latches this state. 7.2.2 Under voltage Shut Down To avoid uncontrolled motion of for example a driven motor at low voltages, the control IC will turn off all MOSFETS, when the supply voltage drops below the turn-off voltage VUV(OFF). The control IC returns to normal operation when the supply voltage rises above the turn-on voltage VUV(ON). 7.2.3 Over temperature Protection The FAN7093_F085 is protected against over temperature by an integrated temperature sensor in the control IC. Over temperature is turning off both output stages. This state is latched until the device is reset by a low signal with a minimum pulse length of treset at the pin, assuming the control IC temperature decreased by at least the thermal hysteresis Repetitive use of the over temperature protection impacts lifetime. 7.2.4 Current Limitation The current is measured in both MOSFETS of the FAN7093_F085. As soon as the current is reaching the limit ICL, the low- or high-side MOSFET is deactivated and the other MOSFET activated for tCLS. During that time changes at the IN pin are ignored. However, the pin can still be used to turn off both MOSFETs. After time tCLS the MOSFETS return to their initial setting. The error signal at the IS pin is reset after 2 * t CLS. Unintentional triggering of the current limit circuitry through short current spikes (e.g. inflicted by EMI coming from the motor) is suppressed by an internal filter. Reaction delay time of the filter circuitry is affecting the current limit level ICL depending on slew rate of the load FAN7093_F085 Rev. C1 9 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 current dI/dt. Figure 4 Timing Diagram Current Limitation (Inductive Load) In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation. This method of limiting the current has the advantage of greatly reduced power dissipation in the FAN7093_F085 compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device. 7.2.5 Short Circuit Protection The device is short circuit protected against • output shorted to ground • output shorted to battery voltage • short circuit of load The short circuit protection is a combination of current limit and over-temperature shut down of the device 7.2.6 Electrical Characteristics - Protection Functions VBATT = 7 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) FAN7093_F085 Rev. C1 10 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions Max. Under Voltage Shut Down 7.2.1 Turn - off Voltage 7.2.2 Turn - on Voltage 7.2.3 hysteresis VUV(ON) – VUV(OFF) 4.9 VUV(HY) – – 5.6 V – -- V VS increasing VS decreasing 0.15 – V – VOV(ON) 28 VOV(OFF) 27 VOV(HY) – tlock – – V – 35 V VS decreasing VS increasing 1.0 140 – V µs Over Voltage Lock Out 7.2.4 7.2.5 Turn - off Voltage Turn - on Voltage 7.2.6 7.2.7 hysteresis Lock out time – Current Limitation 7.2.8 Current Limit Detection level High- and Low- side Peak Current Limit Detection level High- and Low- side (Note 2) 7.2.9 ICL 39 50 61 A ICP 72 88 105 A Note 2. Not subject to production test, specified by design Current Limitation Timing 7.2.10 Shut OFF Time for HS and LS tCLS 100 150 200 µs 170 150 – -– 15 190 170 – °C °C K – – – 4 – – µs – Thermal Shut Down 6 7.2.11 7.2.12 7.2.13 7.2.14 7) TjSD TjSO Tsd(HY) Reset Pulse at Pin (low) treset Turn off Tj Turn on Tj Thermal Hysteresis Not subject to production test, specified by design 7.3 Control and Diagnostics 7.3.1 Input Circuit The gate drivers for the MOSFETS are controlled through inputs IN and and are TTL/CMOS compatible Schmitt triggers with hysteresis. Setting thepin to high enables the device. In this condition one of the two power MOSFETS is turned on depending on the input level of the IN pin. To FAN7093_F085 Rev. C1 11 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 deactivate both switches, the pin has to be set to low. No external driver is needed. The FAN7093_F085 can interface directly with a microcontroller, as long as the maximum ratings are not exceeded. 7.3.2 Dead Time Generation The dead time is generated on the control IC to prevent shoot through between the power MOSFETS. The dead time is almost independent of the selected slew rate in order to reach a high PWM frequency of 60kHz 7.3.3 Adjustable Slew Rate In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation within the application by connecting an external resistor RSR to GND. If the SR pin is open by design or if the intermittent disconnect happens, the slew rate is set to the value shown in table on page 8 rows 7.1.1, 7.1.9. 7.3.4 Status Flag Diagnostic with Current Sense Capability The status pin IS is used as a combined current sense and error flag output. In normal operation (current sense mode), a current source, in the control IC is connected to the status pin, which delivers a current proportional to the forward load current flowing through the active high-side or low-side MOSFET. Current flow in the reverse direction cannot be detected except for a marginal leakage current IIS(LK). The external resistor RIS determines the voltage per output current. The current sense ratio is 1/8500 (see table on page 15 for details). In case of a fault condition the status output is connected to a current source which is independent of the load current and provides IIS(lim). The maximum voltage at the IS pin is determined by the choice of the external resistor and the supply voltage. In case of current limitation the IIS(lim) is activated for 2 * tCLS. FAN7093_F085 Rev. C1 12 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 Figure 5 Current sense mode and error flag mode Figure 6 Sense current versus load current and flag current FAN7093_F085 Rev. C1 13 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 7.3.5 Truth table Device state Normal operation Normal operation Normal operation Over voltage Under voltage Over temperature Or shorted LS or HS Over temperature Or shorted LS or HS Current limit Current limit IN HS LS IS Mode 0 1 1 X 0 1 OFF OFF ON OFF ON OFF 0 CS CS X X X X ON OFF OFF OFF 1 0 Stand-by mode LS active HS active Shut-down of LS, HS activated, error detected UV lockout 0 X OFF OFF 0 Stand-by mode, reset of latch 1 1 1 X 1 0 OFF OFF ON OFF ON OFF 1 1 1 Shut-down with latch, error detected Switched mode, error detected 8) Switched mode, error detected8) 8) Device will return to normal operation after time tcls. The error signal will be reset after 2*tcls. Inputs Power FETs Status flag IS 0 = logic low OFF = turned off CS = current sense mode 1 = logic high ON = turned on 1 = logic high (error) X = Don’t care FAN7093_F085 Rev. C1 14 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 7.3.6 Electrical Characteristics - Control and Diagnostics VBATT = 7 V to 18 V, Tj = -40 C to +150 C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos Symbol Min. Control Inputs (IN and ) 7.3.1 Low level Voltage ,IN Parameter VINXH 1.5 7.3.2 VINXH High level Voltage ,IN 7.3.3 Input voltage hysteresis 7.3.4 Input current high level Current Sense 7.3.5 Current Sense ratio in static onCondition KILIS = IL/IIS VINXH(HY) IINXH 500 20 KILIS 4.5 Typ. Max. Unit V 8.5 3.5 V 80 mV µA 13.5 10³ RIS = 800 Ω IL = 8A – 50A IL = 1.1A – 8A 5.5 7 mA mA RIS = 800 Ω RIS = 800 Ω note 7.5 300 4 V µA µs RIS ≥ 3 kΩ VINH = 5 V, VIN = X, IL = 0 A IN – 90%Vis 3.5 7.3.6 7.3.7 7.3.8 7.3.9 7.4.0 Maximum analog Sense Current Sense Current in fault Condition (Note 3) Maximum IS output voltage Isense Leakage current Settling time IIS(lim) IIS(fault) 4.5 5.5 VIS(fault) IISLeak tSET Conditions VINH = VIN = 0.4V - 5.3V Note 3. Not subject to production test, specified by design FAN7093_F085 Rev. C1 15 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 8 Application . Application Examples Typical motor drive application in full bridge configuration Figure 7 Full bridge application FAN7093_F085 Rev. C1 16 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 Typical motor drive application in half bridge configuration Figure 8 Half bridge application FAN7093_F085 Rev. C1 17 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge December 2011 9 Package drawings FAN7093_F085 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I60 FAN7093_F085 Rev. C1 19 www.fairchildsemi.com