Single P-channel MOSFET ELM33417CA-S ■General description ■Features ELM33417CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-4.5A Rds(on) < 51mΩ (Vgs=-10V) Rds(on) < 85mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Symbol Limit Unit Vds Vgs -30 ±20 -4.5 V V Id Ta=25°C Power dissipation Ta=70°C Junction and storage temperature range A 1.25 Pd Tj, Tstg A -3.5 -20 Idm Note 3 W 0.80 -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead t≤5s Steady-state Steady-state Rθja Rθja Rθjl ■Pin configuration Typ. Max. Unit 90 125 60 °C/W °C/W °C/W ■Circuit SOT-23(TOP VIEW) 3 1 Note 2 D Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 4-1 Single P-channel MOSFET ELM33417CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Vgs=0V, Id=-250μA -30 Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V, Vgs=0V, Tj=125°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) -1.0 -20 Ta=25°C Typ. Max. Unit Note V -1.8 -1 -10 μA ±100 nA -3.0 V A 1 mΩ 1 S 1 -1.1 V 1 -3 -6 A A 3 Vgs=-10V, Id=-4.5A 42 51 66 10 85 Forward transconductance Gfs Vgs=-4.5V, Id=-3.5A Vds=-10V, Id=-4.5A Diode forward voltage Vsd If=-4.5A, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-10V, f=1MHz 700 120 pF pF Crss 75 pF 12.5 nC 2 2.1 3.5 7 nC nC ns 2 2 2 10 30 ns ns 2 2 22 13.4 ns nC 2 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Qg Vgs=-10V, Vds=-15V Id=-4.5A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-15V td(off) Id≈-1A, Rgen=6Ω Turn-off fall time Body diode reverse recovery charge tf Qrr NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 Single P-channel MOSFET ELM33417CA-S ■Typical electrical and thermal characteristics 4-3 Single P-channel MOSFET ELM33417CA-S 4-4