RoHS RoHS N-30EPU12 Series SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 30 A FEATURES N-30APU12 N-30EPU12 Ultrafast recovery 175°C operating junction temperature Designed and qualified for industrial level - Compliant to RoHS BENEFITS Cathode to base Reduced RFI and EMI Higher frequency operation Cathode to base 2 2 Reduced snubbing Reduced parts count 1 Cathode DESCRIPTION/APPLICATIONS 3 Anode TO-247AC modified These diodes are optimized to reduce losses and EMI / R FI in high frequency power conditioning systems. 3 Anode 1 Anode TO-247AB PRODUCT SUMMARY The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. trr 26 ns IF(AV) 30 A VR 1200 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VR Cathode to anode voltage VALUES UNITS 1200 V Continuous forward current lF(AV) TC = 100 °C 30 Single pulse forward current lFSM TC = 25 °C 280 T j , T Stg Operating junction and storage temperatures ELECTRICAL SPECIFICATIONS PARAMETER Breakdown voltage, blocking voltage Forward voltage Reverse leakage current Junction capacitance www.nellsemi.com VF lR CT - 55 to 175 °C (TJ = 25 ºC unless otherwise specified) SYMBOL V BR, Vr A TEST CONDITIONS l R = 100µA MIN. 1200 TYP. MAX. - - l F = 30A - 2.7 3.3 l F = 60A - 3.4 - l F = 30A, T J = 125°C - 2.0 - V R = V R rated - - 100 T J = 150°C, V R = V R rated - - 500 V R = 200V - 36 - Page 1 of 6 UNITS V µA pF N-30EPU12 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products DYNAMIC RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time SYMBOL trr (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS TYP. MAX. I F = 0.5A, I R = 1A, I RR =0.25A (RG#1 CKT) - 55 60 I F = 1A, dI F /dt = -100 A/µs, V R =30V, T J =25°C - 26 - T J = 25°C - 320 - - 435 - T J = 125°C Peak recovery current lRRM Reverse recovery charge Qrr IF = 30 A dIF/dt = -200 A/µs VR = 800 V MIN. UNITS ns - 4 - - 9 - T J = 25°C - 545 - T J = 125°C - 2100 - MIN. TYP. MAX. - 0.5 0.8 - 0.4 - - 5.5 - g - 0.2 - oz. - 1.2 (10) N⋅ m (lbf . in) T J = 25°C T J = 125°C A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS Mounting surface, flat, smooth and greased Weight Marking device www.nellsemi.com °C/W 0.6 (5) Mounting torque Case style TO-247AC modified 30EPU12 Case style TO-247AB 30APU12 Page 2 of 6 UNITS N-30EPU12 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.80 D=0.9 0.70 0.7 0.60 0.50 0.5 0.40 Note: PDM Thermal impedance(°C/W), Z θJC 0.90 0.30 t1 0.3 t2 0.20 SINGLE PULSE 0.1 0.10 Duty Factor D =t 1 /t 2 Peak T J = PDM xZ θJC +T C 0.05 0 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 Rectangular pulse duration (seconds) Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change 600 200 T J =125°C V R =800V Reverse recovery time, t rr (ns) 180 Forward current, I F (A) 160 140 T J =175°C 120 100 80 T J =125°C 60 T J =25°C 40 T J =-55°C 60A 500 400 30A 300 15A 200 100 20 0 0 0 1 3 2 5 4 0 Anode-to-cathode voltage (V), V F 400 600 800 1000 1200 Current rate of change(A/μs), -di F /dt Fig.4 Reverse recovery charge vs. current rate of change Fig 5. Reverse recovery current vs. current rate of change 60A 4000 (nC) 3000 30A 2000 15A 1000 T J =125°C V R =800V 30 60A 25 30A (A) T J =125°C V R =800V Reverse recovery current, I RRM 35 5000 Reverse recovery charge, Q rr 200 20 15 15A 10 5 0 0 0 200 400 600 800 1000 1200 0 Current rate of change (A/μs), -di F /dt www.nellsemi.com 200 400 600 800 1000 Current rate of change (A/μs), -di F /dt Page 3 of 6 1200 N-30EPU12 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig6. Dynamic parameters vs. junction temperature Fig.7 Maximum average forward current vs. case temperature 1.2 50 1.0 Duty cycle = 0.5 T J =175°C 45 trr 40 trr IRRM 35 0.8 l F(AV) (A) Dynamic parameters, K f (Normalized to 1000A/µs) Qrr 0.6 0.4 30 25 20 15 Qrr 10 0.2 5 0.0 0 25 75 50 0 100 125 150 25 75 50 Junction temperature (°C),T J 100 125 150 Case temperature (°C) Fig.8 Junction capacitance vs. reverse voltage 200 160 140 120 (pF) Junction capacitance, C J 180 100 80 60 40 20 0 1 10 100 200 reverse voltage (V), V R Ordering Information Tabel Device code N - 1 www.nellsemi.com 30 E P U 2 3 4 5 1 - Nell 2 - Current rating 3 - Single Diode 4 - TO-247 5 - Ultrafast Recovery 6 - Voltage Rating (12 = 1200 V) Page 4 of 6 12 (30 = 30A) E = 2 pins A = 3 pins 175 N-30EPU12 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions www.nellsemi.com Page 5 of 6 N-30EPU12 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Outine Table N-30EPU12 Outine Table N-30APU12 www.nellsemi.com Page 6 of 6