FDB8160_F085 N-Channel PowerTrench® MOSFET 30V, 80A, 1.8mΩ Features Applications Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A 12V Automotive Load Control Typ Qg(10) = 187nC at VGS = 10V Starter/Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode DC/DC converter UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant TO-263AB FDB SERIES ©2010 Fairchild Semiconductor Corporation FDB8160_F085 Rev. C 1 www.fairchildsemi.com FDB8160_F085 N-Channel PowerTrench® MOSFET October 2010 Symbol Drain to Source Voltage VDSS VGS ID EAS PD Parameter Ratings 30 Units V Gate to Source Voltage ±20 V Drain Current Continuous (TC < 160oC, VGS = 10V) 80 Pulsed A See Figure 4 Single Pulse Avalanche Energy (Note 1) 1290 mJ Power Dissipation 254 W Derate above 25oC 1.7 W/oC TJ, TSTG Operating and Storage Temperature o -55 to +175 C Thermal Characteristics RθJC Maximum Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area 0.59 o C/W 43 o C/W Package Marking and Ordering Information Device Marking FDB8160 Device FDB8160_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V 30 - - VDS = 24V, VGS = 0V - - 1 - - 250 VGS = ±20V - - ±100 VGS = VDS, ID = 250μA 2 2.9 4 V ID = 80A, VGS= 10V - 1.5 1.8 mΩ ID = 80A, VGS= 10V, TJ = 175°C - 2.6 3.1 mΩ VDS = 15V, VGS = 0V, f = 1MHz - 11825 - pF - 1810 - pF pF TJ = 150oC μA nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 1240 - Rg Gate Resistance f = 1MHz - 1.75 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 187 243 nC Qg(th) Threshold Gate Charge VGS = 0 to 2V nC Qgs Gate to Source Gate Charge Qgs2 Qgd - 20 26 - 43 - nC Gate Charge Threshold to Plateau - 23 - nC Gate to Drain “Miller“ Charge - 57 - nC FDB8160_F085 Rev. C 2 VDD = 15V ID = 80A www.fairchildsemi.com FDB8160_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton Turn-On Time - - 60 ns td(on) Turn-On Delay Time - 17.2 - ns tr Turn-On Rise Time - 18.9 - ns td(off) Turn-Off Delay Time - 60 - ns tf Turn-Off Fall Time - 27 - ns toff Turn-Off Time - - 137 ns ISD = 80A - 0.9 1.25 V ISD = 40A - 0.8 1.0 V - 48 62 ns - 42 55 nC VDD = 15V, ID = 80A, VGS = 10V, RGS = 1.3Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 80A, dISD/dt = 100A/μs Notes: 1: Starting TJ = 25oC, L = 0.63mH, IAS = 64A 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8160_F085 Rev. C 3 www.fairchildsemi.com FDB8160_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25oC unless otherwise noted 350 1.0 300 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) VGS = 10V CURRENT LIMITED BY PACKAGE 250 200 150 100 50 0 175 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 0.1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 VGS = 10V TC = 25oC FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDB8160_F085 Rev. C 4 www.fairchildsemi.com FDB8160_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1000 3000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us SINGLE PULSE TJ = MAX RATED TC = 25oC 10 1 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 1 10ms 100ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.01 90 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 160 160 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 6. Unclamped Inductive Switching Capability VDD = 5V 120 TJ = 175oC 80 o TJ = -55 C 40 120 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX VGS = 20V VGS = 10V VGS = 7V VGS = 6V VGS = 5V 80 VGS = 4.5V VGS = 4V 40 TJ = 25oC 0 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.0 7 Figure 7. Transfer Characteristics ID = 80A PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 6 4 TJ = 175oC 2 TJ = 25oC 0 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDB8160_F085 Rev. C 1.5 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 8 0.5 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 1.6 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 5 www.fairchildsemi.com FDB8160_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 1.10 VGS = VDS ID = 250μA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.2 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 Figure 13. Capacitance vs Drain to Source Voltage FDB8160_F085 Rev. C 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 50000 10000 ID = 1mA 10 ID = 80A VDD = 12V 8 6 VDD = 15V 4 VDD = 18V 2 0 0 50 100 150 Qg, GATE CHARGE(nC) 200 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDB8160_F085 N-Channel PowerTrench® MOSFET Typical Characteristics *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FDB8160_F085 Rev. C 7 www.fairchildsemi.com FDB8160_F085 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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