High Power PIN Diodes MA4P HIPAX™ Series V3.00 Case Styles Features ● ● ● ● ● ● ● High Power Handling Low Loss, Low Distortion Voltage Ratings to 1000 Volts Passivated PIN Chip – Full Face Bonded Hermetically Sealed Low Inductance Axial Lead, and SMQ Surface Mount Package Options Available as Chips 401 Description M/A-COM’s HIPAX PIN diodes are designed for service in switch and attenuator applications requiring high power handling and low distortion. HIPAX PIN diodes incorporate a fully passivated PIN diode chip resulting in extremely low reverse leakage current. all high voltage HIPAX PIN diodes are specified at 1 µA reverse current at the voltage rating. The chip is full face bonded to refractory metal pins on both anode and cathode. The result is a low loss PIN diode with low thermal resistance due to symmetrical thermal paths. HIPAX PIN diodes are packaged in hermetically sealed ceramic enclosures at temperatures exceeding 300°C. Package options include: axial leaded and surface mount packages that have a square, nonrollable outline. The semiconductor technology utilized in the HIPAX family draws on M/A-COM’s substantial experience in PIN diode design. This results in thick intrinsic region PIN diodes specified with low resistance, low capacitance and long carrier lifetime parameters. SMQ Square Outline Surface Mount The surface mount HIPAX PIN diode is available in M/A-COM’s unique, square outline, non-rollable SMQ package design. The SMQ package eases automatic pick and place indexing and assembly. 1072 Applications HIPAX PIN diodes are designed for use in a wide variety of switch and attenuator applications from HF through UHF at power levels beyond 1 kW CW. These diodes have been comprehensively characterized to ensure predictable performance. Design Recommendations 1. Low Distortion Attenuators: MA4P4301B 2. Surface Mount Switches: MA4P7101F 3. Cellular Radio Antenna Switches: MA4P1200, MA4P1250 Environmental Capability HIPAX PIN diodes are appropriate for use in military, industrial and commercial applications. They are capable of meeting the environmental requirements of MIL-STD-750 and MIL-STD-202. HIPAX PIN diodes are capable of HTRB screening at 80% of voltage rating at 150°C. Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: 1 Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 High Power PIN Diodes MA4P HIPAX™ Series V3.00 Voltage Ratings and Model Numbers Absolute Maximum Ratings @ 25°C Voltage Rating MA4P4000 Series MA4P4300 Series MA4P7000 Series MA4P7100 Series Parameter Absolute Maximum DC Reverse Voltage Voltage Rating 100 Volts MA4P4001 MA4P4301 MA4P7001 MA4P7101 Operating and Storage Temperature -65°C to +175°C 200 Volts MA4P4002 MA4P4302 MA4P7002 MA4P7102 Installation Temperature 400 Volts — — — MA4P7104 600 Volts MA4P4006 — MA4P7006 — +250°C, 30 Seconds Electrical Specifications @ 25°C Parameter Symbol Condition MA4P4000 Series MA4P4300 Series MA4P7000 Series MA4P7100 Series Series Resistance (Max) Rs 100 mA, 100 MHz 0.5 Ω 1.0 Ω 0.8 Ω 0.5 Ω Total Capacitance (Max) CT 100 V, 1 MHz 2.2 pF 2.0 pF 0.7 pF 1.0 pF Parallel Resistance (Min) Rp 100 V, 100 MHz 20 kΩ 50 kΩ 200 kΩ 100 kΩ Carrier Lifetime (Min) TL 10 mA 6 µs 8 µs 3 µs 2.5 µs Forward Voltage (Max) VF 100 mA 1.0 V 1.2 V 1.0 V 1.0 V Reverse Current (Max) IR Voltage Rating 1 µA 1 µA 1 µA 1 µA I-Region Width (Nominal) W — 175 µm 300 µm 175 µm 100 µm Power Dissipation and Thermal Resistance Ratings MA4P4000 PD øJC MA4P4300 PD øJC MA4P7000 PD øJC MA4P7100 PD øJC Package Style Condition B (Axial Leaded) 1/4 Inch Total Length to 25°C Free Air Rating 12 W 2.5 W 12.5°C/W — 10 W 2.5 W 15°C/W — 5W 1.5 W 30°C/W — 6W 1.5 W 25°C/W — F (SMQ Surface Mount) 25°C Contacts 7.5 W 20°C/W 5W 30°C/W 3W 50°C/W 3W 50°C/W Both B and F Single 1 µs pulse 100 kW — 100 kW — 15 kW — 15 kW — Both B and F Single 100 µs pulse 5 kW .03°C/W 5 kW 03°C/W 300 W 0.5°C/W 300 W 0.5°C/W Environmental Ratings Ordering Information HIPAX PIN diodes may be supplied with JAN TX level screening. The table lists some of the MIL-STD-750 environmental tests HIPAX PIN diodes are designed to meet. HIPAX PIN diodes are designated by MA4P followed by four digits which indicate the voltage rating and series. A package style letter suffix follows: Test MIL-STD-750 Method Description High Temperature Storage 1031 +175°C, 250 Hours Temperature Shock 1051 -65°C to +175°C, 20 Cycles HTRB 1038 809b VR, +150°C, 96 Hours Moisture Resistance 1021 Fine Leak 1071 Cond. H 1 x 10-7 CC/Sec Constant Acceleration 2006 20,000 G’s Vibration Fatigue 2046 20,000 G’s Solderability 2026 Lead Fatigue 2036.3 Cond. E 3 cycles, 8 oz., 90°, Bent at Body Tension 2036.3 Cond. A 2 Ibs., 30 seconds To purchase: MA4P4000 Series, 600V, SMQ package (F) Order Model No.: MA4P4006F The same unit in an axial lead package (B) is: MA4P4006B. Specifications Subject to Change Without Notice. M/A-COM, Inc. 2 North America: Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 High Power PIN Diodes MA4P HIPAX™ Series V3.00 Electrical Specifications @ 25°C (MA4P1200) Parameter Minimum Typical Maximum Unit Voltage Rating 50 — — V I = 10 µA Series Resistance — 0.5 075 Ω F = 100 MHz I = 50 mA Capacitance: MA4P1200 — 1.2 1.5 pF F = 1 MHz V = 50 V Parallel Resistance 5K 10 K — Ω Condition Absolute Maximum Ratings @ 25°C Parameter Absolute Maximum Operating and Storage Temp. -65°C to +175°C DC Reverse Voltage F = 100 MHz V=0V Carrier Lifetime 2.0 4.0 — µs Forward Bias Harmonic 2a 3a Distortion (R a R a ) 80 90 — dBc F = 100 MHz P = 30 WA I = 50 mA I = 10 mA Reverse Bias Harmonic 2a 3a Distortion (R a – R a ) 60 70 — dBc F = 100 MHz P = 0 dBm V=0V Forward Voltage — — 1.0 V Power Dissipation: Free Air 1/4 inch spaced to +25°C Contacts 50 Volts 1.5 Watts 5.5 Watts I = 50 mA Note: MA4P1200 available in axial leaded case style. Typical Performance Curves SERIES RESISTANCE AT 100 MHz vs FORWARD CURRENT (MA4P1200) PARALLEL RESISTANCE vs FREQUENCY AND REVERSE BIAS (MA4P1200) CAPACITANCE vs FREQUENCY (MA4P1200) HEAT SINK TEMPERATURE vs MAXIMUM POWER DISSIPATION (MA4P1200) Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: 3 Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 High Power PIN Diodes MA4P HIPAX™ Series V3.00 Typical Performance Curves SERIES RESISTANCE AT 100 MHz vs FORWARD CURRENT (MA4P4000, MA4P4300 SERIES) SERIES RESISTANCE AT 100 MHz vs FORWARD CURRENT (MA4P7000, MA4P7100 SERIES) CAPACITANCE vs FREQUENCY AND REVERSE BIAS (MA4P4000 SERIES) PARALLEL RESISTANCE vs FREQUENCY AND REVERSE VOLTAGE (MA4P4000 SERIES) CAPACITANCE vs FREQUENCY AND REVERSE BIAS (MA4P4300 SERIES) PARALLEL RESISTANCE vs FREQUENCY AND REVERSE VOLTAGE (MA4P4300 SERIES) Specifications Subject to Change Without Notice. M/A-COM, Inc. 4 North America: Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 High Power PIN Diodes MA4P HIPAX™ Series V3.00 Typical Performance Curves (Cont’d) CAPACITANCE vs FREQUENCY AND REVERSE BIAS (MA4P7000 SERIES) PARALLEL RESISTANCE vs REVERSE VOLTAGE (MA4P7000 SERIES) CAPACITANCE vs FREQUENCY AND REVERSE BIAS (MA4P7100 SERIES) PARALLEL RESISTANCE vs FREQUENCY AND REVERSE VOLTAGE (MA4P7100 SERIES) CARRIER LIFETIME vs FORWARD CURRENT PULSED THERMAL IMPEDANCE vs PULSE WIDTH Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: 5 Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 High Power PIN Diodes MA4P HIPAX™ Series V3.00 Case Styles Style B - Axial Leaded Case Style 401 — MA4P7000B, MA4P7100B, MA4P1200 INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A — 0.190 — 4,83 B — 0.090 — 2,29 C 0.975 — 24,8 — D 0.027 0.029 0,69 0,74 Case Style 402 — MA4P4000B, MA4P4300B INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A — 0.230 — 5,842 B — 0.140 — 3,556 C 0.975 — 24,765 — D 0.039 0.041 0,991 1,041 Style F- SMQ Surface Mount Case Style 1072 — MA4P7000F, MA4P7100F INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A 0.080 0.095 2,032 2,413 B 0.115 0.135 2,921 3,429 C 0.008 0.030 0,203 0,762 Case Style 1091 — MA4P4000F, MA4P4300F INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A 0.138 0.155 3,51 3,94 B 0.180 0.200 4,57 5,08 C 0.008 0.030 0,203 0,762 Bonding Pad for SMQ Diodes Case Styles 1072 Case Styles 1091 DIM. IN. MM IN. MM A 0.093 2,36 0.150 3,81 B 0.050 1,27 0.050 1,27 C 0.060 1,52 0.100 2,54 Specifications Subject to Change Without Notice. M/A-COM, Inc. 6 North America: Tel. (800) 366-2266 Fax (800) 618-8883 ■ Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 ■ Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020