SS8550LT1 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 VCEO Value -25 -40 -5.0 -1500 300 2.4 417 -25 -0.1 -40 -100 -5.0 -100 O E=-20Vdc, I E= 0) -40 -5.0 WEITRON http://www.weitron.com.tw 1/4 -0.15 u -0.15 u -0.15 u Rev.A 10-Apr-09 SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Max Unit 120 600 - VCE(sat) - -0.5 Vdc fT 100 Symbol ON CHARACTERISTICS DC Current Gain (IC=-100 mAdc, VCE=1.0 Vdc) hFE (1) Collector-Emitter Saturation Voltage (IC=-800 mAdc, IB=-80mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (IC=-50 mAdc, VCE=-10 Vdc, f=30MHz) - MHz CLASSIFICATION OF hFE(1) Rank P Q R S Range 120-200 150-300 200-400 300-600 Marking 1HB 1HD 1HF 1HH WEITRON http://www.weitron.com.tw 2/4 Rev.A 10-Apr-09 SS8550LT1 10 00 -0.5 VCE = -1V IB=-3.5mA -0.4 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB=-4.0mA IB=-3.0mA IB=-2.5mA -0.3 IB=-2.0mA IB=-1.5mA -0.2 IB=-1.0mA -0.1 10 0 10 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 1 -0.1 -2.0 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 FIG.2 DC Current Gain -10000 -100 VCE = -1V IC[mA], COLLECTOR CURRENT IC=10IB -100 0 VBE(sat) -100 VCE(sat) -10 -0.1 -1000 IC[mA], COLLECTOR CURRENT FIG.1 Static Characteristic VBE(s at), VCE(s at)[V], SATURATION VOLTAGE -10 -1 -10 -100 -10 -1 -0.1 -0.0 -1000 -0.2 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT FIG.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT -0.4 FIG.4 Base-Emitter On Voltage 1000 VCE=-10V 100 10 -1 -10 -100 -1000 IC[mA], COLLE CTOR CURRENT FIG.5 Current Gain Bandwidth Product WEITRON http://www.weitron.com.tw 3/4 Rev.A 10-Apr-09 SS8550LT1 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 4/4 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 Rev.A 10-Apr-09