TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: = ± 60° 20043 • Package matched with IR emitter series VSMB1940X01 • Floor life: 168 h, MSL 3, acc. J-STD-020 DESCRIPTION • Lead (Pb)-free reflow soldering TEMT7000X01 is a high speed silicon NPN epitaxial planar phototransistor in a miniature 0805 package for surface mounting on printed boards. The device is sensitive to visible and near infrared radiation. • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Detector in automotive applications • Light sensors • Radiation sensors PRODUCT SUMMARY COMPONENT IcaE ( A) (deg) 0.1 (nm) TEMT7000X01 225 to 675 ± 60 470 to 1090 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMT7000X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Collector emitter voltage PARAMETER TEST CONDITION VCEO 20 V Emitter collector voltage VECO 7 V Collector current Tamb 55 °C Power power dissipation Junction temperature UNIT IC 20 mA PV 100 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Acc. reflow profile fig. 8 Tsd 260 °C Acc. J-STD-051 RthJA 270 K/W Soldering temperature Thermal resistance junction/ambient Document Number: 81961 Rev. 1.1, 21-Feb-11 For technical questions, contact: [email protected] www.vishay.com 1 TEMT7000X01 Silicon Phototransistor in 0805 Package Vishay Semiconductors PV - Power Dissipation (mW) 120 100 80 60 RthJA = 270 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21331 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. 20 Collector emitter breakdown voltage Collector light current MAX. UNIT 100 nA IC = 0.1 mA VCEO VCE = 5 V, E = 0 ICEO 1 VCE = 0 V, f = 1 MHz, E = 0 CCEO 25 Ee = 1 mW/cm2, = 950 nm, VCE = 5 V ICA Collector dark current Collector emitter capacitance TYP. V 225 pF 450 675 μA Angle of half sensitivity ± 60 deg Wavelength of peak sensitivity p 850 nm 0.1 470 to 1090 Range of spectral bandwidth Collector emitter saturation voltage Temperature coefficient of Ica IC = 0.05 mA VCEsat Ee = 1 mW/cm2, = 950 nm, VCE = 5 V TkIca nm 0.4 V 1.1 %/K BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 Ica - Collector Light Current (mA) ICE0 - Collector Dark Current (nA) 10 000 IF = 0 1000 VCE = 70 V VCE = 25 V VCE = 5 V 100 10 1 0 20594 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature www.vishay.com 2 1 0.1 VCE = 5 V 0.01 0.001 0.01 21551 0.1 1 10 Ee - Irradiance (mW/cm²) Fig. 3 - Collector Light Current vs. Irradiance For technical questions, contact: [email protected] Document Number: 81961 Rev. 1.1, 21-Feb-11 TEMT7000X01 Silicon Phototransistor in 0805 Package Vishay Semiconductors 0° 100 20° Ie, rel - Relative Radiant Intensity 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement 30° 90 tr/tf - Rise/Fall Time (µs) 10° 80° 0 0 250 0.6 500 750 1000 1250 1500 1750 2000 0.4 0.2 0 94 8013 IC - Collector Current (µA) 20599 Fig. 4 - Rise/Fall Time vs. Collector Current Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 2.0 Ica rel - Relative Collector Current S (λ)rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 1.6 1.4 1.2 1.0 0.8 0.6 400 500 600 700 800 900 0 1000 1100 λ - Wavelength (nm) 21555 94 8239 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength REFLOW SOLDER PROFILE 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Collector Current vs. Ambient Temperature DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Temperature (°C) 1.8 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 50 19841 100 150 200 250 FLOOR LIFE 300 Time (s) DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Document Number: 81961 Rev. 1.1, 21-Feb-11 For technical questions, contact: [email protected] www.vishay.com 3 TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package PACKAGE DIMENSIONS in millimeters 19757 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81961 Rev. 1.1, 21-Feb-11 TEMT7000X01 Silicon Phototransistor in 0805 Package Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters Quantity per reel: 3000 pcs 20690 Document Number: 81961 Rev. 1.1, 21-Feb-11 For technical questions, contact: [email protected] www.vishay.com 5 TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 technical drawings according to DIN specifications Issue: 2; 26.04.10 20875 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 81961 Rev. 1.1, 21-Feb-11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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