UNISONIC TECHNOLOGIES CO., LTD UTT60N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. FEATURES * RDS(ON) = 18mΩ @VGS = 10 V * Fast switching capability * Avalanche energy Specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT60N06L-TN3-R UTT60N06G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-252 1 G Pin Assignment 2 3 D S Packing Tape Reel 1 of 8 QW-R502-575.A UTT60N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER Drain to Source Voltage Gate to Source Voltage RATINGS UNIT 60 V ±20 V TC = 25°C 60 A ID Continuous Drain Current TC = 100°C 39 A Drain Current Pulsed (Note 2) IDM 120 A Avalanche Energy Single Pulsed EAS 100 mJ Power Dissipation (TC=25°C) PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature SYMBOL VDSS VGS THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 110 1.8 UNIT °C/W °C/W 2 of 8 QW-R502-575.A UTT60N06 Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V Forward VGS = 20V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 30 A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS = 0V, VDS =25V, f = 1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Rise Time tR VDD=48V, ID=60A, RL=0.5Ω, VGS=10V (Note 1, 2) Turn-Off Delay Time tD(OFF) Fall Time tF Total Gate Charge QG VDS = 30V, VGS = 10 V Gate-Source Charge QGS ID = 60A (Note 1, 2) Gate-Drain Charge (Miller Charge) QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS = 0 V, IS = 60A Continuous Source Current IS Pulsed Source Current TYP UNISONIC TECHNOLOGIES CO., LTD MAX UNIT 60 2.0 14 1 100 -100 V μA nA nA 4.0 18 V mΩ 2000 400 115 12 11 25 15 39 12 10 ISM Reverse Recovery Time tRR IS = 60A, VGS = 0 V, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature. www.unisonic.com.tw MIN pF pF pF 30 30 50 30 60 ns ns ns ns nC nC nC 1.6 60 V 120 60 3.4 A ns μC 3 of 8 QW-R502-575.A UTT60N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-575.A UTT60N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-575.A UTT60N06 Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-575.A UTT60N06 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Normalized Thermal Transient Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0. 01 -5 10 0.05 0.02 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-575.A UTT60N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-575.A