ONSEMI MBRAF260T3G

MBRAF260T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
•
•
•
•
•
•
Low Profile Package for Space Constrained Applications
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
150°C Operating Junction Temperature
Guard−Ring for Stress Protection
These are Pb−Free and Halide−Free Devices
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SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERE
60 VOLTS
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
SMA−FL
CASE 403AA
STYLE 6
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
•
MARKING DIAGRAM
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
AYWW
RAGG
G
RAG
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBRAF260T3G
SMA−FL
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 0
1
Publication Order Number:
MBRAF260/D
MBRAF260T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 120°C)
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
IO
2.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TL = 90°C
IFRM
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Storage Temperature Range
Tstg
−55 to +150
°C
Operating Junction Temperature
TJ
−55 to +150
°C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
4.0
60
dv/dt
10,000
A
A
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Value
Unit
RqJL
RqJA
25
90
°C/W
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
vF
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1.0 A)
(iF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 2)
IR
(VR = 60 V)
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
Value
Unit
TJ = 25°C
TJ = 125°C
0.51
0.63
0.475
0.55
TJ = 25°C
TJ = 125°C
0.2
20
V
mA
MBRAF260T3G
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
75°C
125°C
25°C
1
0.1
0.1
0.2
0.4
0.3
0.5
0.6
0.7
25°C
1
0.1
0.8
75°C
125°C
0.1
0.2
0.3
0.4
0.5
0.6
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100
IR, REVERSE CURRENT (AMPS)
125°C
25°C
f = 1 MHz
C, CAPACITANCE (pF)
1.0E−03
75°C
1.0E−04
1.0E−05
25°C
1.0E−06
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1.0E−07
10
1
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1.0E−02
100
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0
10
20
30
40
50
60
10
0
10
20
30
50
40
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
60
50% Duty Cycle
10%
20%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 5. Typical Transient Thermal Response, Junction−to−Ambient
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3
100
1000
MBRAF260T3G
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE O
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
D
DIM
A
b
c
D
E
E1
L
TOP VIEW
A
c
RECOMMENDED
SOLDER FOOTPRINT*
C
SIDE VIEW
SEATING
PLANE
1.76
2X
MILLIMETERS
MIN
MAX
0.90
1.10
1.25
1.65
0.15
0.30
2.40
2.80
4.80
5.40
4.00
4.60
0.70
1.10
5.56
b
1.30
2X
L
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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4
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For additional information, please contact your local
Sales Representative
MBRAF260/D