ONSEMI NGTB20N120IHSWG

NGTB20N120IHSWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
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20 A, 1200 V
VCEsat = 2.10 V
Eoff = 0.65 mJ
Features
•
•
•
•
•
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Low Gate Charge
These are Pb−Free Devices
C
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector−emitter voltage
Rating
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
120
Gate−emitter voltage
VGE
$20
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
40
20
120
G
C
TO−247
CASE 340L
STYLE 4
E
A
A
40
20
MARKING DIAGRAM
A
V
20N120IHS
AYWWG
W
156
62.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB20N120IHSWG
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB20N120IHS/D
NGTB20N120IHSWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.80
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
2.0
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 20 A
VGE = 15 V, IC = 20 A, TJ = 150°C
VCEsat
−
−
2.10
2.5
2.4
−
V
VGE = VCE, IC = 50 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
ICES
−
−
−
−
0.5
2.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
100
nA
Cies
−
3600
−
pF
Coes
−
90
−
Cres
−
65
−
Qg
−
155
−
Qge
−
30
−
Qgc
−
70
−
TJ = 25°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
160
−
tf
−
160
−
Eoff
−
0.65
−
mJ
TJ = 125°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
−
167
−
ns
tf
−
205
−
Eoff
−
1.20
−
mJ
VGE = 0 V, IF = 20 A
VGE = 0 V, IF = 20 A, TJ = 150°C
VF
−
−
1.55
1.65
1.75
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 20 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
DIODE CHARACTERISTIC
Forward voltage
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2
NGTB20N120IHSWG
TYPICAL CHARACTERISTICS
IC, COLLECTOR CURRENT (A)
140
VGE = 20 to 13 V
120
11 V
100
80
10 V
60
40
9V
20
8V
7V
0
0
160
IC, COLLECTOR CURRENT (A)
160
TJ = 25°C
1
2
3
5
4
6
7
8
11 V
80
10 V
60
9V
40
8V
20
7V
0
1
2
3
4
5
6
7
Figure 2. Output Characteristics
11 V
80
10 V
60
40
9V
20
7V
8V
1
2
3
4
5
6
7
120
TJ = 25°C
TJ = 150°C
100
80
60
40
20
0
8
0
4
8
16
12
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
10,000
4
Cies
IC = 40 A
CAPACITANCE (pF)
3
IC = 20 A
IC = 10 A
2
IC = 5 A
1
0
−50
8
140
100
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
100
Figure 1. Output Characteristics
VGE = 20 to 13 V
0
13 V
120
VCE, COLLECTOR−EMITTER VOLTAGE (V)
120
0
VGE = 20 to 15 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = −40°C
140
TJ = 150°C
140
0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
160
1000
100
Coes
−20
10
40
70
100
130
10
160
Cres
0
20
40
60
80
100 120 140
160 180 200
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
NGTB20N120IHSWG
TYPICAL CHARACTERISTICS
TJ = 25°C
80
TJ = 150°C
60
40
20
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCE = 600 V
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1000
1.6
1.4
1.2
1.0
0.8
0.6
VCE = 600 V
VGE = 15 V
IC = 20 A
Rg = 10 W
0.4
0.2
0
0
20
40
60
80
100
120
140
tf
td(off)
100
10
0
160
VCE = 600 V
VGE = 15 V
IC = 20 A
Rg = 10 W
0
20
40
60
80
100
140
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
3.0
160
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
2.5
2.0
tf
1.5
1.0
td(off)
100
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
0.5
0
160 180
140
VF, FORWARD VOLTAGE (V)
SWITCHING TIME (ns)
Eoff, TURN−OFF SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
100
0
Eoff, TURN−OFF SWITCHING LOSS (mJ)
16
SWITCHING TIME (ns)
IF, FORWARD CURRENT (A)
120
8
14
20
26
32
38
1
44
8
14
20
26
32
38
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
44
NGTB20N120IHSWG
TYPICAL CHARACTERISTICS
1000
Eoff, TURN−OFF SWITCHING LOSS (mJ)
2.0
SWITCHING TIME (ns)
1.6
1.2
0.8
VCE = 600 V
VGE = 15 V
IC = 20 A
TJ = 150°C
0.4
0
5
15
25
35
45
55
65
75
Eoff, TURN−OFF SWITCHING LOSS (mJ)
35
45
55
65
Figure 14. Switching Time vs. Rg
75
85
725
775
tf
SWITCHING TIME (ns)
VGE = 15 V
IC = 20 A
Rg = 10 W
TJ = 150°C
375 425
475
525
575
625
675
725
td(off)
100
10
1
775
VGE = 15 V
IC = 20 A
Rg = 10 W
TJ = 150°C
375 425
475
525
575
625
675
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
IC(max) Pulsed
50 ms
IC(max) Continuous
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
25
Figure 13. Switching Loss vs. Rg
1000
0.01
15
1000
0.4
0.1
5
Rg, GATE RESISTOR (W)
0.8
1
VCE = 600 V
VGE = 15 V
IC = 20 A
TJ = 150°C
Rg, GATE RESISTOR (W)
1.2
10
10
1
1.6
100
tf
100
85
2.0
0
td(off)
100
10
VGE = 15 V, TC = 125°C
1
1000
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB20N120IHSWG
TYPICAL CHARACTERISTICS
0.1
THERMAL RESPONSE (ZqJC)
50% Duty Cycle
RqJA = 0.8
20%
0.01 10%
5%
0.001
0.0001
R1
Junction
2%
1%
R2
Rn
Case
Ci = ti/Ri
C1
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
0.00001
Cn
C2
0.0001
0.001
0.01
0.1
1
10
Ri (°C/W)
ti (sec)
0.03570
0.08061
0.140
0.190
0.237
0.114
1.0E−4
1.76E−4
0.002
0.03
0.1
2.0
100
1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
THERMAL RESPONSE (ZqJC)
10
1
0.1
RqJA = 2.0
50% Duty Cycle
20%
10%
5%
R1
Junction
2%
1%
C1
Case
0.00001
Cn
C2
Ri (°C/W)
ti (sec)
0.25813
0.577
0.671
0.387
0.1057
1.48E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
Rn
Ci = ti/Ri
0.01
0.001
R2
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
Figure 21. Test Circuit for Switching Characteristics
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6
10
100
1000
NGTB20N120IHSWG
Figure 22. Definition of Turn On Waveform
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7
NGTB20N120IHSWG
Figure 23. Definition of Turn Off Waveform
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8
NGTB20N120IHSWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NGTB20N120IHS/D