UD7018 N-Ch 75V Fast Switching MOSFETs General Description Product Summery The UD7018 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD7018 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 75V 11mΩ 62A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z Power Tool Application Features z Advanced high cell density Trench technology TO252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 75 V Gate-Source Voltage ±20 V 1 62 A 1 48 A 130 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 174 mJ IAS Avalanche Current 52 A 4 PD@TC=25℃ Total Power Dissipation 90 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 1.4 ℃/W UD7018 N-Ch 75V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) Min. Typ. Max. Unit VGS=0V , ID=250uA 75 --- --- V Reference to 25℃ , ID=1mA --- 0.066 --- V/℃ VGS=10V , ID=20A --- 9 11 mΩ 2 --- 4 V mV/℃ VGS=VDS , ID =250uA VGS(th) Temperature Coefficient --- -5.64 --- VDS=60V , VGS=0V , TJ=25℃ --- --- 1 VDS=60V , VGS=0V , TJ=55℃ --- --- 5 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 52 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω Qg Total Gate Charge (10V) --- 106 --- Qgs Gate-Source Charge --- 19.6 --- Qgd Gate-Drain Charge --- 16.5 --- --- 19.4 --- Td(on) VDS=15V , VGS=10V , ID=15A Turn-On Delay Time nC Rise Time VDD=30V , VGS=10V , RG=3.3Ω, --- 11.4 --- Turn-Off Delay Time ID=1A --- 118.4 --- Fall Time --- 11.2 --- Ciss Input Capacitance --- 7760 --- Coss Output Capacitance --- 320 --- Crss Reverse Transfer Capacitance --- 210 --- Min. Typ. Max. Unit 58 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=30A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current VSD 2,6 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=A , TJ=25℃ --- --- 62 A --- --- 130 A --- --- 1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=52A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD7018 N-Ch 75V Fast Switching MOSFETs Typical Characteristics 12 12 ID=12A VGS=10V 11 VGS=8V 8 RDSON (mΩ) ID Drain Current (A) 10 VGS=6V 10 6 VGS=5V 4 VGS=4V 9 2 0 8 0 0.05 0.1 0.15 VDS , Drain-to-Source Voltage (V) 0.2 4 6 Fig.1 Typical Output Characteristics 8 VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 12 10 ID=15A VGS Gate to Source Voltage (V) IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 8 6 4 2 0 0 1 VSD , Source-to-Drain Voltage (V) 44 66 88 110 QG , Total Gate Charge (nC) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 22 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 3 150 UD7018 N-Ch 75V Fast Switching MOSFETs 10000 1000.00 Ciss 10us Capacitance (pF) 100.00 1000 100us ID (A) 10.00 Coss 10ms 100ms DC 1.00 Crss 100 0.10 TC=25℃ Single Pulse F=1.0MHz 10 1 5 0.01 9 13 17 VDS Drain to Source Voltage(V) 21 0.1 25 1 10 100 1000 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM 0.02 0.01 0.01 0.00001 TON D = TON/T TJpeak = TC + PDM x RθJC SINGLE PULSE 0.0001 0.001 T 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 4