PD-97504 RevA IRAMS12UP60A Series 12A, 600V Integrated Power Hybrid IC for Appliance Motor Drive Applications with Open Emitter Pins Description International Rectifier's IRAMS12UP60A is a 12A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor Drives applications such as energy efficient Washing Machine and Refrigerator Compressor Drivers. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in high precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a Single in line package with full transfer mold structure and CTI>600 minimizes PCB space and resolves isolation problems to heatsink. Features x x x x x x x x x x x Integrated gate drivers and bootstrap diodes Temperature monitor Protection shutdown pin Low VCE (on) Trench IGBT technology Undervoltage lockout for all channels Matched propagation delay for all channels Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.3~0.9kW / 85~253 Vac Isolation 2000VRMS min and CTI> 600 Absolute Maximum Ratings VCES / VRRM IGBT/ FW Diode Blocking Voltage 600 V Io @ TC=25°C Positive Bus Input Voltage RMS Phase Current at FPWM=16kHz (Note 1) 450 Io @ TC=100°C RMS Phase Current at FPWM=16kHz (Note 1) 6 Ipk Maximum Peak Phase Current (Note 2) 18 Fp Maximum PWM Carrier Frequency Maximum Power dissipation per IGBT @ TC =25°C 20 kHz Pd 26 VISO Isolation Voltage (1min) W VRMS TJ (IGBT & Diode & IC) Maximum Operating Junction Temperature TC Operating Case Temperature Range -20 to +100 TSTG Storage Temperature Range -40 to +125 T Mounting torque Range (M3 screw) + V 12 2000 A +150 0.8 to 1.0 °C Nm Note 1: Sinusoidal Modulation at V+=320V, VCC=15V, TJ=150°C, MI=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms, VCC=15V, TC=25°C, FPWM=16kHz. www.irf.com 1 IRAMS12UP60A Internal Electrical Schematic – IRAMS12UP60A V+ (10) VRU (12) VRV (13) VRW (14) Rg1 Rg3 Rg5 VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 Rg2 LO1 16 Rg4 24 HO1 R3 LO2 15 25 VB1 1 VCC HIN1 (15) HIN2 (16) HIN3 (17) 2 HIN1 LIN1 (18) 5 LIN1 Rg6 Driver IC LO3 14 3 HIN2 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (19) R1 LIN3 (20) T/ITRIP (21) R2 RT THERMISTOR C VDD (22) VSS (23) 2 www.irf.com IRAMS12UP60A Absolute Maximum Ratings (Continued) Symbol Parameter Min Max IBDF Units Conditions Bootstrap Diode Peak Forward Current --- 1.0 A tP=10ms, TJ=150°C, TC=100°C PBR Peak Bootstrap Resistor Peak Power (Single Pulse) --- 15.0 W tP=100μs, TC=100°C ESR series VS1,2,3 High side floating supply offset voltage VB1,2,3 - 20 VB1,2,3 +0.3 V VB1,2,3 High side floating supply voltage -0.3 600 V VCC Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, T/Itrip -0.3 Lower of (VSS+15V) or VCC+0.3V V Inverter Section Electrical Characteristics VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. Symbol Parameter Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V VIN=5V, IC=250μA V(BR)CES / T Temperature Coeff. Of Breakdown Voltage --- 0.47 --- V/°C VIN=5V, IC=500μA (25°C - 150°C) VCE(ON) Collector-to-Emitter Saturation Voltage ICES Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop VBDFM Bootstrap Diode Forward Voltage Drop RBR Bootstrap Resistor Value RBR/RBR Bootstrap Resistor Tolerance --- www.irf.com --- 1.5 1.8 --- 1.7 --- --- 6 80 --- 30 --- Units Conditions V A IC=6A, TJ=25°C IC=6A, TJ=150°C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=150°C IF=6A -- 1.85 2.45 --- 1.5 --- --- --- 1.25 --- --- 1.10 --- 2 --- TJ=25°C --- ±5 % TJ=25°C V V IF=6A, TJ=150°C IF=1A IF=1A, TJ=125°C 3 IRAMS12UP60A Inverter Section Switching Characteristics VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. Symbol Parameter Min Typ Max EON Turn-On Switching Loss --- 270 400 EOFF Turn-Off Switching Loss --- 55 85 ETOT Total Switching Loss --- 325 485 EREC Diode Reverse Recovery energy --- 10 20 tRR Diode Reverse Recovery time --- 100 --- EON Turn-on Switching Loss --- 390 --- EOFF Turn-off Switching Loss --- 110 --- ETOT Total Switching Loss --- 500 --- EREC Diode Reverse Recovery energy --- 35 --- tRR Diode Reverse Recovery time --- 140 --- ns QG Turn-On IGBT Gate Charge --- 19 29 nC RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area Units Conditions μJ ns μJ FULL SQUARE 5 --- --- μs IC=6A, V+=400V VCC=15V, L=1.2mH Energy losses include "tail" and diode reverse recovery See CT1 IC=6A, V+=400V VCC=15V, L=1.2mH, TJ=150°C Energy losses include "tail" and diode reverse recovery See CT1 IC=8A, V+=400V, VGE=15V TJ=150°C, IC=6A, VP=600V V+= 450V, VCC=+15V to 0V TJ=25°C, V+= 400V, VGE=+15V to 0V See CT3 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol Definition VB1,2,3 High side floating supply voltage Min Typ Max Units VS+12.5 VS+15 VS+17.5 VS1,2,3 V High side floating supply offset voltage Note 4 VCC Low side and logic fixed supply voltage 13.5 --- 450 V 15 16.5 VT/ITRIP T/ITRIP input voltage VSS V --- VSS+5 V VIN Logic input voltage LIN, HIN VSS --- VSS+5 V HIN Deadtime High side PWM pulse width 1 --- --- μs External dead time between HIN and LIN 1 --- --- μs Note 3: For more details, see IR21365 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details) 4 www.irf.com IRAMS12UP60A Static Electrical Characteristics Driver Function VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 3) Symbol Definition Min Typ VIN,th+ Max Units Positive going input threshold for LIN, HIN 3.0 VIN,th- Negative going input threshold for LIN, HIN --- --- --- V --- 0.8 VCCUV+, VBSUV+ VCC/VBS supply undervoltage, Positive going threshold V 10.6 11.1 11.6 V VCCUV-, VBSUV- VCC/VBS supply undervoltage, Negative going threshold 10.4 10.9 11.4 V VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V IQBS Quiescent VBS supply current --- --- 120 μA IQCC Quiescent VCC supply current --- --- 2.3 mA ILK Offset Supply Leakage Current --- --- 50 μA IIN+ Input bias current (OUT=LO) --- 100 220 μA IIN- Input bias current (OUT=HI) -1 200 300 μA V(T/ITRIP) ITRIP threshold Voltage 3.85 4.3 4.75 V V(T/ITrip, HYS) ITRIP Input Hysteresis --- 0.15 --- V Dynamic Electrical Characteristics VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. Driver only timing unless otherwise specified. Symbol Parameter Min Typ Max TON Input to Output propagation turnon delay time (see fig.11) --- 600 --- TOFF Input to Output propagation turnoff delay time (see fig. 11) --- Units Conditions ns IC=6A, V+=300V 600 --- ns TFILIN Input filter time (HIN,LIN) --- 200 --- μs VIN=0 or VIN=5V TBLT-ITRIP ITRIP Blanking Time --- 150 --- ns VIN=0 or VIN=5V, VITRIP=5V TITRIP ITRIP to six switch turn-off propagation delay (see fig. 2) --- --- 1.75 μs IC=6A, V+=300V DT Internal Dead Time injected by driver 220 290 360 ns VIN=0 or VIN=5V MT Matching Propagation Delay Time (On & Off) all channels --- 40 75 ns External dead time> 400ns TFLT-CLR Post ITRIP to six switch turn-off clear time (see fig. 2) www.irf.com --- 7.7 --- --- 6.7 --- ms TC = 25°C TC = 100°C 5 IRAMS12UP60A Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Rth(J-C) Thermal resistance, per IGBT --- 4.7 5.2 Rth(J-C) Thermal resistance, per Diode --- 5.8 6.9 Units Conditions Inverter Operating Condition Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/mK Rth(C-S) Thermal resistance, C-S --- 0.1 --- CTI Comparative Tracking Index 600 --- --- V BKCurve Curvature of module backside 0 --- --- m Convex only Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max R25 Resistance 97 100 103 k TC = 25°C R125 Resistance 2.25 2.52 2.80 k TC = 125°C B B-constant (25-50°C) 4165 4250 4335 k -40 --- 125 °C Temperature Range Units Conditions R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C Typ. Dissipation constant --- 1 --- RT Resistance --- 12 --- k TC=25°C RT/RT Resistor Tolerance --- --- ±1 % TC=25°C Input-Output Logic Level Table V+ Ho Hin1,2,3 (15,16,17) U,V,W IC Driver (8,5,2) Lin1,2,3 (18,19,20) 6 ITRIP HIN1,2,3 LIN1,2,3 U,V,W 0 0 1 V+ 0 1 0 0 0 1 1 Off 0 0 0 Off 1 X X Off Lo www.irf.com IRAMS12UP60A HIN1,2,3 LIN1,2,3 T/ITRIP U,V,W Figure1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 50% 50% T/ITRIP U,V,W 50% 50% TT/ITRIP TFLT-CLR Figure 2. T/ITRIP Timing Waveform Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAMS12UP60A Module Pin-Out Description 8 Pin Name 1 VB3 2 U, VS3 Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage 3 NA none 4 VB2 High Side Floating Supply voltage 2 5 V,VS2 6 NA none 7 VB1 High Side Floating Supply voltage 1 8 W,VS1 Output 2 - High Side Floating Supply Offset Voltage Output 1 - High Side Floating Supply Offset Voltage 9 NA none 10 V+ Positive Bus Input Voltage 11 NA none 12 LE1 Low Side Emitter Connection - Phase 1 13 LE2 Low Side Emitter Connection - Phase 2 14 LE3 Low Side Emitter Connection - Phase 3 15 HIN1 Logic Input High Side Gate Driver - Phase 1 16 HNI2 Logic Input High Side Gate Driver - Phase 2 17 HIN3 Logic Input High Side Gate Driver - Phase 3 18 LIN1 Logic Input Low Side Gate Driver - Phase 1 19 LIN2 Logic Input Low Side Gate Driver - Phase 2 20 LIN3 Logic Input Low Side Gate Driver - Phase 3 21 T/ITRIP 22 VCC +15V Main Supply 23 VSS Negative Main Supply Temperature Monitor and Shut-down Pin www.irf.com IRAMS12UP60A Typical Application Connection IRAMS12UP60A 1 P 9DF00 IRAMS12UP60A 23 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1μF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DT04-4, application note AN-1044 or Figure 10. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation. www.irf.com 9 IRAMS12UP60A Maximum Output Phase RMS Current - A 12 11 10 9 8 7 6 TC = 80ºC TC = 90ºC TC = 100ºC 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz Maximum Output Phase RMS Current - A 8 7 6 5 4 3 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 2 1 0 1 10 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6 10 www.irf.com IRAMS12UP60A Total Power Loss- W 80 60 40 IOUT = 7A IOUT = 6A IOUT = 5A 20 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 5. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz 120 Total Power Loss - W 100 80 60 FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz 40 20 0 0 1 2 3 4 5 6 7 8 9 10 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz www.irf.com 11 IRAMS12UP60A Max Allowable Case Temperature - ºC 160 140 120 100 80 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 60 40 0 1 2 3 4 5 6 7 8 9 10 Output Phase Current - ARMS Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz 160 IGBT Junction Temperature - °C TJ avg = 1.19 x TTherm + 32.8 150 140 130 120 110 100 98 90 65 70 75 80 85 90 95 100 105 Internal Therm istor Tem perature Equivalent Read Out - °C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature Sinusoidal Modulation, V+=400V, Iphase=6Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6 12 www.irf.com IRAMS12UP60A 5.5 TTHERM °C RTHERM k TTHERM °C RTHERM k TTHERM °C RTHERM k -40 4397 25 100.0 90 7.481 4.5 -35 3089 30 79.22 95 6.337 -30 2197 35 63.17 100 5.384 4.0 -25 1582 40 50.68 105 4.594 -20 1151 45 40.90 110 3.934 -15 846.6 50 33.20 115 3.380 -10 629.0 55 27.09 120 2.916 -5 471.6 60 22.22 125 2.522 0 357.0 65 18.32 130 2.190 Thermistor Pin Read-Out Voltage - V 5.0 3.5 3.0 2.5 2.0 5 272.5 70 15.18 135 1.907 10 209.7 75 12.64 140 1.665 15 162.7 80 10.57 145 1.459 20 127.1 85 8.873 150 1.282 Max Avg Min 1.5 1.0 0.5 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Therm istor Tem perature - °C Figure 9. Thermistor Readout vs. Temperature (7.5kohm REXT pull-down resistor) and Normal Thermistor Resistance values vs. Temperature Table. Recommended Bootstrap Capacitor - F 11.0 10F 10.0 9.0 8.0 6.8F 7.0 6.0 4.7F 5.0 4.0 3.3F 3.0 2.2F 2.0 1.0 0.0 0 5 10 15 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAMS12UP60A Figure 11. Switching Parameter Definitions VCE IC IC VCE 90% IC 50% HIN/LIN HIN/LIN 50% HIN/LIN 90% IC HIN/LIN 10% VCE 10% IC 10% IC TON TOFF tr Figure 11a. Input to Output propagation turn-on delay time. tf Figure 11b. Input to Output propagation turn-off delay time. IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery. 14 www.irf.com IRAMS12UP60A V+ 5V IN Ho Hin1,2,3 IC Driver U,V,W Lo IO Lin1,2,3 Figure CT1. Switching Loss Circuit V+ 1k VCC 10k Lin1,2,3 IN Ho Hin1,2,3 IC Driver 5VZD U,V,W IO Lo IN Io Figure CT2. S.C.SOA Circuit V+ 1k VCC 10k IC Driver 5VZD IN Ho Hin1,2,3 Lin1,2,3 IN U,V,W IO Lo Io Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAMS12UP60A Package Outline IRAMS12UP60A missing pin : 3,6,9,11 note3 note5 note4 Ԙ P 4DB00 IRAMS12UP60A note2 Ԛ ԙ note1: Unit Tolerance is +0.5mm, 䇭䇭䇭 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note5: “P” Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. Dimensions in mm For mounting instruction see AN-1049 16 www.irf.com IRAMS12UP60A Package Outline IRAMS12UP60A-2 missing pin : 3,6,9,11 note3 note5 note4 Ԙ P 4DB00 IRAMS12UP60A-2 note2 Ԛ ԙ note1: Unit Tolerance is +0.5mm, 䇭䇭䇭 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note5: “P” Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. Dimensions in mm For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 2010-06-22 www.irf.com 17