COMSET TIC236A

SEMICONDUCTORS
TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M,
TIC236N, TIC236S
SILICON TRIACS
•
•
•
•
•
•
High current triacs
12 A RMS
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 50 mA (Quadrants 1-3)
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Ratings
A
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current
at (or below) 70°C case
temperature (see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm
from case for 10 seconds
B
C
D
Unit
E
M
S
N
100 200 300 400 500 600 700 800
V
12
A
100
A
±1
-40 to +110
-40 to +125
A
°C
°C
230
°C
THERMAL CHARACTERISTICS
Symbol
R∂JC
R∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
02/10/2012
COMSET SEMICONDUCTORS
Value
Unit
≤2
≤ 62.5
°C/W
1|3
SEMICONDUCTORS
TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M,
TIC236N, TIC236S
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
IDRM
Ratings
Repetitive peak
off-state current
IGT
Gate trigger
current
VGT
Gate trigger
voltage
Holding current
IH
Latching current
IL
VTM
dv/dt
di/dt
dv/dt©
Peak on-state
voltage
Critical rate of rise
of off-state voltage
Critical rate of rise
of off-state current
Critical rise of
communication
voltage
Test Condition(s)
VD = Rated VDRM, , IG = 0
TC = 110°C
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, IG = 0
initiating ITM = 100 mA
Min
Typ
Max
Unit
-
-
±2
mA
-
12
-19
-16
34
0.8
-0.8
-0.8
0.9
50
-50
-50
2
-2
-2
2
-
22
40
V
mA
Vsupply = -12 V†, IG = 0
initiating ITM = -100 mA
Vsupply = +12 V† (seeNote5)
Vsupply = -12 V† (seeNote5)
-
-22
-40
-
-
80
-80
mA
ITM = ± 17 A, IG = 50 mA (see Note4)
-
±1.4
±1.7
V
-
±400
-
V/µs
-
±100
-
A/µs
±1.2
±9
-
V/µs
VDRM = Rated VDRM, IG = 0
TC = 110°C
VDRM = Rated VDRM, IGT = 50 mA,
diG/dt = 50mA/µs, TC = 110°C
VDRM = Rated VDRM, IT = 1.4 IT(RMS)
di/dt = 0.5 IT(RMS) /ms, TC = 80°C
† All voltages are whit respect to Main Terminal 1.
Note1: These values apply bidirectionally for any value of resistance between the gate and Main
Terminal 1.
Note2: This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C
derate linearly to 110°C case temperature at the rate of 300 mA/°C.
Note3: This value applies for one 50-Hz full-sine-wave when the device is operating at (or below)
the rated value of peak reverse voltage and on-state current. Surge may be repeated after
the device has returned to original thermal equilibrium.
Note4: This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %,
voltage-sensing contacts, separate from the courrent-carrying contacts are located within
3.2mm from de device body.
Note5: he triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator
with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.
02/10/2012
mA
COMSET SEMICONDUCTORS
2|3
SEMICONDUCTORS
TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M,
TIC236N, TIC236S
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
Main Terminal 1
Main Terminal 2
Gate
September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
02/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3|3