FORMOSA FMS2301

SMD MOSFET
Formosa MS
FMS2301
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2~ 3
Rating and characteristic curves........................................................ 4~ 5
Pinning information........................................................................... 6
Marking........................................................................................... 6
Suggested solder pad layout............................................................. 6
Packing information.......................................................................... 7
Reel packing.................................................................................... 8
Suggested thermal profiles for soldering processes............................. 8
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
Revised Date
DS-231129
2009/02/10
2011/07/21
Revision
C
Page.
8
SMD MOSFET
Formosa MS
FMS2301
Package outline
20V P-Channel Enhancement
Mode MOSFET
SOT-23
GS
DS(ON)
GS
0.020 (0.50)
DS(ON)
.084(2.10)
.068(1.70)
0.120 (3.04)
0.110 (2.80)
DS(ON)
(B)
0.012 (0.30)
0.045 (1.15)
•R
≦110mΩ@V =-4.5V
•R
≦150mΩ@V =-2.5V
• Super high density cell design for extremely low R
• In compliance with EU RoHS 2002/95/EC directives.
• Suffix "-H" indicates Halogen-free part, ex.FMS2301-H.
0.034 (0.85)
Features
(C)
(A)
0.063 (1.60)
0.027 (0.67)
0.013 (0.32)
0.047 (1.20)
0.108 (2.75)
0.051 (1.30)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
0.003 (0.09)
0.007 (0.18)
0.083 (2.10)
Mechanical data
0.035 (0.89)
Dimensions in inches and (millimeters)
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
M aximum ratings (AT T
o
A
=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Drain-source voltage
Symbol
-20
V DSS
O
Drain current-continue
V
-2.7
T A = 25 C
ID
O
T A = 70 C
-pulsed
Gate- source voltage-continue
-2 . 1
I DM
-11
V GS
±8.0
O
Maximum power dissipation
UNIT
Limit
T A = 25 C
A
V
1.3
W
PD
O
T A = 70 C
Thermal resistance-junction to ambient*
Operation junction temperature
Storage temperature
0.8
o
R θJA
100
TJ
-55 to +150
o
T STG
-65 to +150
o
C/W
C
C
2
* The device mounted on 1in FR4 board with 2 oz copper
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TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID
Issued Date
Revised Date
DS-231129
2009/02/10
2011/07/21
Revision
C
Page.
8
SMD MOSFET
Formosa MS
FMS2301
Electrical characteristics (At T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Symbol
MIN.
V GS = 0V, I D = -250uA
BV DSS
-20
TYP.
MAX.
UNIT
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
O
V DS = -20V, V GS = 0V, T J = 25 C
I DSS
Gate-body leakage current-forward
V GS = 8V, V DS =0
I GSSF
Gate-body leakage current-reverse
V GS = -8V, V DS =0
I GSSR
Static drain-source on-resistance
V GS(th)
V DS = V GS , I D = -250uA
Gate threshold voltage
a
Diode Forward Voltage
V GS = -4.5V, I D = -2.8A
V GS = -2.5V, I D = -2.0A
V GS =0V, I S = -1.0A, T J =25 C
-1.0
μA
100
nA
-100
nA
-1.0
V
90
110
110
150
mΩ
-0.7
-1.4
V
-0.4
R DS(ON)
O
V
V SD
DYNAMIC
Intput capacitance
Output capacitance
V DS = -15V, V GS = 0V,
f=1.0MHz
Reverse transfer capacitance
Total gate charge
Gate-source charge
V DS = -6.0V, I D = -2.8A
V GS =-4.5V
Gate-drain charge
C iss
510
C oss
53
C rss
17
Qg
5.8
Q gs
1.7
Q gd
1.2
T d(on)
53
Tr
32
T d(off)
47
Tf
7
pF
nC
Turn-On Delay Time
V DS = -6.0V, R L =6.0Ω, R GEN =6Ω
V GS =-4.5V
ns
Turn-Off Delay Time
Notes : a . Pulse test : pulse width≦ 300us , duty cycle≦ 2 % , Guaranteed by design , not subject to production testing .
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TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID
Issued Date
Revised Date
DS-231129
2009/02/10
2011/07/21
Revision
C
Page.
8
Rating and characteristic curves (FMS2301)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
Revised Date
DS-231129
2009/02/10
2011/07/21
Revision
C
Page.
8
Rating and characteristic curves (FMS2301)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
Revised Date
DS-231129
2009/02/10
2011/07/21
Revision
C
Page.
8
SMD MOSFET
Formosa MS
FMS2301
Pinning information
Pin
Simplified outline
Symbol
D
PinD
PinG
PinS
Drain
Drain
Gate
Source
Gate
G
Source
S
Marking
Type number
Marking code
2301, 01
FMS2301
WAG0A
(Note 1)
Note: 1.
P / N:
“WAG” is FMS2301-H
“WA” shown on the 1st~2rd position on --- FMS2301
“G” shown on the 3th position on --- Green product-Halogen free
D / C:
0A is the sequence of “0-9” & “A~Z”
0~9 shown on the 4th position on ---2010~2019
A~Z shown on the5th position on ---1week~26week
A ~ Z shown on the 5th position on ---27week~52week
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 6
Document ID
Issued Date
Revised Date
DS-231129
2009/02/10
2011/07/21
Revision
C
Page.
8
SMD MOSFET
Formosa MS
FMS2301
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-23
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 7
Document ID
Issued Date
Revised Date
DS-231129
2009/02/10
2011/07/21
Revision
C
Page.
8
SMD MOSFET
Formosa MS
FMS2301
Reel packing
PACKAGE
REEL SIZE
SOT-23
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3000
4.0
30,000
183*183*123
178
CARTON
SIZE
(m/m)
CARTON
(pcs)
383*262*387
APPROX.
GROSS WEIGHT
(kg)
11.6
240,000
Suggested thermal profiles for soldering processes
o
o
1.Storage environment: Temperature=5 C ~40 C Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
o
150 C
o
200 C
60~120sec
Tsmax to T L
-Ramp-upRate
o
<3 C /sec
Time maintained above:
-Temperature(T L )
-Time(t L )
o
217 C
60~260sec
o
o
255 C- 0/ + 5 C
Peak Temperature(T P )
o
Time within 5 C of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 C /sec
o
o
Time 25 C to Peak Temperature
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TEL:886-2-22696661
FAX:886-2-22696141
<6minutes
Page 8
Document ID
Issued Date
Revised Date
DS-231129
2009/02/10
2011/07/21
Revision
C
Page.
8