WILLAS FM120-M+ SESD099-04AT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. DESCRIPTIONS • Low power loss, high efficiency. low forward drop. • High current capability, The SESD099-04AT1 is a 4-channel ultravoltage low capacitance rail • High surge capability. clamp ESD protection diodes array. Each channel consists of • Guardring for overvoltage protection. diodes that steer positive or negative ESD current a pair• of ESD Ultra high-speed switching. Silicon epitaxial planar chip,rail. metal silicondiode junction. • A zener is integrated to either the positive or negative • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 3 4 the positive and negative supply rails. in to the array between/228 MIL-STD-19500 5 for packing suffix rail "G" pin (assigned as GND) In the• RoHS typicalproduct applications, the code negative Halogen free product for packing code suffix "H" is connected with system ground. The Positive ESD current is 0.012(0.3) Typ. 2 1 0.071(1.8) 0.056(1.4) 6 SOT-23-6 Mechanical data steered to the ground through an ESD diode and Zener diode and 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant the positive ESD voltage is clamped to the zener voltage. • Case : Molded plastic, SOD-123H The 6(6'099-04AT1 is idea to protect high speed data lines. , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. is provided Three package type Method 2026 for easy PCB layout. • Polarity : Indicated by cathode band • Mounting Position : Any FEATURES • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) APPLICATIONS * 4 channels of ESD protection; * HDMI / DVI ports; * Provides ESD protection to IEC61000-4-2 level 4 * Display Port interface; MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. - ±15kV discharge Single phase halfair wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% - ±8kV contact discharge; SYMBOL * Channel I/O toRATINGS GND capacitance: 0.9pF(Max) Marking Code * Channel I/O to I/O capacitance: 0.45pF(Max) Maximum Recurrent Peak Reverse Voltage * Low clamping voltage; VRRM * 10M / 100M / 1G Ethernet; * USB 2.0 interface; FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH FM120-MH FM130-MH FM140-MH * VGA interface 12 20 13 30 14 15box; 16 * Set-top 40 50 60 18 80 10 100 * Flat panel Monitors / TVs; 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V * Low operating voltage; * Improved zener structure; Maximum Average Forward Rectified Current * PC / Note book IO 1.0 30 * Optimized package for easy high speed data lines PCB layout; Peak Forward Surge Current 8.3 ms single half sine-wave IFSM * RoHS compliant. Pb-Free package is available * Typical Thermal Resistance (Note 2) RΘJA RoHS product for packing code suffix ”G” Typical Junction Capacitance (Note 1) CJ Halogen free product for packing code suffix “H” superimposed on rated load (JEDEC method) TJ Operating Temperature Range Storage Temperature Range A A 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC ORDERING INFORMATION Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Part No. NOTES: 6(6'099-04AT1 @TPackage A=125℃ SOT-23-6 IR 0.50 0.70 0.85 0.5 Marking C96 Material Halogen 10 0.9 0.92 V Shipping m 3000Tape&Reel 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD099-04AT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. PIN CONFIGURATION • Low profile surface mounted application in order to SOD-123H optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data SOT-23-6 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • TerminalsMAXIMUM :Plated terminals, solderable per MIL-STD-750 ABSOLUTE RATINGS 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Characteristics • Polarity : Indicated by cathode band Peak Pulse Power(8/20μs) Position : Any • Mounting • Weight : Approximated 0.011 gram Peak Pulse Current(8/20μs) Symbol Ratings Unit Dimensions in inches and (millimeters) PPP 150 W IPP 5 A VESD1 ±15kV ESD per IEC 61000-4-2(Air) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings 25℃ temperature unless otherwise specified. ESD at per IECambient 61000-4-2(Contact) Single phase half wave, 60Hz, resistive of inductive load. Operating Temperature Range For capacitive load, derate current by 20% Storage Temperature Range RATINGS VESD2 ±8kV kV Topr -55 ~ +125 °C Tstg -55 ~ +150 °C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS VoltageCHARACTERISTICS(Tamb VRMS =25°C) 14 ELECTRICAL 21 28 35 42 56 70 105 140 V 20 30 40 50 100 150 200 V Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Characteristics Symbol Maximum Average Forward Rectified Current VRRM VDC Test Conditions Min. IO Peak Forward Surge Current 8.3 ms singleV half sine-waveAny I/O pin to GND RWM IFSM Voltage 60 Typ. Reverse Typical ThermalBreakdown Resistance (Note 2) Typical Junction Capacitance (Note 1) Voltage VBR Reverse Leakage IR Storage Temperature Range Current CHARACTERISTICS Positive Clamping Maximum Forward Voltage at 1.0A DC VC1 Voltage Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Negative NOTES: Clamping J pin to GND Any CI/O @T A=125℃ VC2 2- Thermal Resistance From Junction to Ambient Junction Capacitance Between Channel Junction Capacitance Between I/O And GND 2012-09 2012-06 CJ1 CJ2 Unit 5 V - 65 to +175 1 TSTG Any I/O pin to GND ℃ V -55 to +150 TJ VRWM =5V, T=25°C; μA IPPSYMBOL =1A, tP=8/20Μs; FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF pulse; Positive 0.50 0.70 8.5 IR pin to GND Any I/O Negative pulse; 0.5 12.0 0.85 V 0.9 0.92 U V m 10 IPP=1A, tP=8/20μS; 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Voltage Max. 40 120 6 -55 to +125 Operating Temperature Range t =1mA; RΘJA 80 1.0 30 Reverse Working superimposed on rated load (JEDEC method) kV 1.8 V Any I/O pin to GND VR=0V, f=1MHz; Between I/O pins VR=0V, f=1MHz; Any I/O pin to GND 0.35 0.45 pF 0.9 pF WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD099-04AT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY Package outline Features • Batch process design, excellent power dissipation offers TYPICAL ELECTRICAL CHARACTERISTICS CURVE better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD099-04AT1 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. TYPICAL ELECTRICAL capability. CHARACTERISTICS CURVE • High surge • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .110(2.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U .122(3.10) RATINGS Marking Code 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 1.0 30 A .070(1.75) .098(2.50) VRRM .118(3.00) Maximum Recurrent Peak Reverse Voltage .051(1.30) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. SOT-23-6 For capacitive load, derate current by 20% A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS .067(1.70) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U .083(2.10) V 0.9 0.92 VF 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .000(0.01) .051(1.30) 2- Thermal Resistance From Junction to Ambient 2012-09 .010(0.25) .020(0.50) 2012-06 0.5 IR 10 m .036(0.90) .057(1.45) Maximum Forward Voltage at 1.0A DC .033(0.85) .040(1.05) Dimensions in inches and (millimeters) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.