ONSEMI MMBFJ310L

MMBFJ309L, MMBFJ310L,
SMMBFJ310L
JFET - VHF/UHF Amplifier
Transistor
N−Channel
http://onsemi.com
Features
2 SOURCE
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
•
3
GATE
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1 DRAIN
MAXIMUM RATINGS
Symbol
Value
Unit
Drain−Source Voltage
Rating
VDS
25
Vdc
Gate−Source Voltage
VGS
25
Vdc
IG
10
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
Gate Current
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
MARKING DIAGRAM
6x M G
G
1
6x
M
G
= Device Code
x = U for MMBFJ309L
x = T for MMBFJ310L, SMMBFJ310L
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MMBFJ309LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
MMBFJ310LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SMMBFJ310LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
SMMBFJ310LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 5
1
Publication Order Number:
MMBFJ309LT1/D
MMBFJ309L, MMBFJ310L, SMMBFJ310L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)GSS
−25
−
−
Vdc
IGSS
−
−
−
−
−1.0
−1.0
nAdc
mAdc
MMBFJ309
MMBFJ310, SMMBFJ310
VGS(off)
−1.0
−2.0
−
−
−4.0
−6.5
Vdc
MMBFJ309
MMBFJ310, SMMBFJ310
IDSS
12
24
−
−
30
60
mAdc
VGS(f)
−
−
1.0
Vdc
Forward Transfer Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|Yfs|
8.0
−
18
mmhos
Output Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|yos|
−
−
250
mmhos
Input Capacitance
(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Ciss
−
−
5.0
pF
Reverse Transfer Capacitance
(VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Crss
−
−
2.5
pF
Equivalent Short−Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
en
−
10
−
nVń ǸHz
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = −1.0 mAdc, VDS = 0)
Gate Reverse Current (VGS = −15 Vdc)
Gate Reverse Current (VGS = −15 Vdc, TA = 125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(VDS = 10 Vdc, VGS = 0)
Gate−Source Forward Voltage
(IG = 1.0 mAdc, VDS = 0)
SMALL−SIGNAL CHARACTERISTICS
http://onsemi.com
2
MMBFJ309L, MMBFJ310L, SMMBFJ310L
60
I D , DRAIN CURRENT (mA)
60
VDS = 10 V
TA = -55°C
50
50
+25°C
IDSS
+25°C
40
40
30
30
+150°C
20
20
+25°C
-55°C
10
10
+150°C
-5.0
-1.0
-4.0
-3.0
-2.0
ID - VGS, GATE-SOURCE VOLTAGE (VOLTS)
IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
0
IDSS, SATURATION DRAIN CURRENT (mA)
70
70
0
10
1.0 k
Yfs
Yfs
10 k
100
1.0 k
Yos
VGS(off) = -2.3 V =
VGS(off) = -5.7 V =
10
120
RDS
96
7.0
72
Cgs
4.0
48
24
Cgd
1.0
100
0.01
0
10
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
9.0
ID, DRAIN CURRENT (mA)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
Figure 3. On Resistance and Junction
Capacitance versus Gate−Source Voltage
http://onsemi.com
3
0
0
R DS , ON RESISTANCE (OHMS)
100 k
Yos, OUTPUT ADMITTANCE (μ mhos)
CAPACITANCE (pF)
Yfs , FORWARD TRANSCONDUCTANCE (μmhos)
Figure 1. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
MMBFJ309L, MMBFJ310L, SMMBFJ310L
24
|S12|, |S22|
3.0
0.060 1.00
2.4
0.79 0.39
S22
VDS = 10 V
ID = 10 mA
TA = 25°C
0.048 0.98
S21
Y11
18
1.8
Y21
12
1.2
0.73 0.33
VDS = 10 V
ID = 10 mA
TA = 25°C
0.67 0.27
0.024 0.94
0.61 0.21
0.6
0.012 0.92
S12
Y12
0
100
200
300
500
f, FREQUENCY (MHz)
700
0.55 0.15
100
1000
Figure 4. Common−Gate Y Parameter
Magnitude versus Frequency
q21, q11
180° 50°
40°
160°
30°
150°
20°
140°
10°
200
300
500
f, FREQUENCY (MHz)
q11, q12
-20° 120°
q21, q22
-40°
86°
-40° 100°
85°
-60°
80°
-120° 84°
-80°
60°
-100°
40°
-120°
20°
100
0
q11
-20°
q21
700 1000
Figure 5. Common−Gate S Parameter
Magnitude versus Frequency
q12, q22
-20° 87°
q22
170°
0.036 0.96
S11
Y22
6.0
Y12 (mmhos)
|Y11|, |Y21 |, |Y22 | (mmhos)
30
|S21|, |S11|
0.85 0.45
q21
q22
-20°
-60°
-80°
-40°
-100°
q12
q11
130°
0°
100
-140°
VDS = 10 V
ID = 10 mA
TA = 25°C
200
300
500
f, FREQUENCY (MHz)
-60°
q12
-160° 83°
-180°
700
q21
-200° 82°
1000
Figure 6. Common−Gate Y Parameter
Phase−Angle versus Frequency
VDS = 10 V
ID = 10 mA
TA = 25°C
200
300
500
f, FREQUENCY (MHz)
q11
700
-80°
-100°
1000
Figure 7. S Parameter Phase−Angle
versus Frequency
http://onsemi.com
4
0.90
MMBFJ309L, MMBFJ310L, SMMBFJ310L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MMBFJ309LT1/D