ONSEMI NS6A5.0AF-D

NS6A5.0AFT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional
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The NS6AxxAFT3G series is designed to protect voltage sensitive
components from high voltage, high energy transients. This device
has excellent clamping capability, high surge capability, low zener
impedance and fast response time. The NS6AxxAFT3G series is
ideally suited for use in computer hard disk drives, communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Cathode
Specification Features:
•
•
•
•
•
•
•
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
Peak Reverse Working Voltage of 5 V
Peak Pulse Power of 600 W (10 x 1000 msec)
ESD Rating of Class 3 (>16 kV) per Human Body Model
ESD Rating of Class 4 (>8 kV) IEC 61000−4−2
Fast Response Time
Low Profile Package
This is a Pb−Free Device
Anode
SMA−FL
CASE 403AA
MARKING DIAGRAM
xxx
AYWWG
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
xxx
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NS6AxxAFT3G
SMA−FL
(Pb−Free)
5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 − Rev. 0
1
Publication Order Number:
NS6A5.0AF/D
NS6A5.0AFT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
PPK
600
W
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
PD
1.5
W
RqJL
20
50
mW/°C
°C/W
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
PD
RqJA
0.5
4.0
250
Forward Surge Current (Note 4) @ TA = 25°C
IFSM
40
A
TJ, Tstg
−65 to +150
°C
Operating and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403AA case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
I
otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A)
Symbol
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
IF
Parameter
VC VBR VRWM
Working Peak Reverse Voltage
VBR
V
IR VF
IT
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
IPP
Uni−Directional TVS
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
ELECTRICAL CHARACTERISTICS
Device
Device
Marking
VC @ IPP (Note 8)
Breakdown Voltage
VRWM
(Note 6)
IR @ VRWM
V
mA
Min
Nom
VBR (Note 7) Volts
Max
@ IT
VC
IPP
Ctyp
(Note 9)
mA
V
A
pF
NS6A5.0AFT3G
6AA
5.0
800
6.40
6.7
7.0
10
9.2
65.2
2700
NS6A12AFT3G
6AJ
12
0.5
13.3
14
14.7
1.0
19.5
31
1450
NS6A13AFT3G
6AK
13
5.0
14.4
15.15
15.9
1.0
21.5
27.9
1160
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 1.
9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C.
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2
NS6A5.0AFT3G Series
tr≤ 10 ms
100
VALUE (%)
PEAK VALUE - IPP
HALF VALUE 50
IPP
2
tP
0
0
1
2
3
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25° C
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP.
140
120
100
80
60
40
20
0
4
0
25
50
75
100
t, TIME (ms)
TA, AMBIENT TEMPERATURE (°C)
Figure 1. 10 × 1000 ms Pulse Waveform
Figure 2. Pulse Derating Curve
Zin
LOAD
Vin
VL
Figure 3. Typical Protection Circuit
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3
125
150
NS6A5.0AFT3G Series
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA−01
ISSUE O
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
D
DIM
A
b
c
D
E
E1
L
TOP VIEW
A
c
2X
MILLIMETERS
MIN
MAX
0.90
1.10
1.25
1.65
0.15
0.30
2.40
2.80
4.80
5.40
4.00
4.60
0.70
1.10
RECOMMENDED
SOLDER FOOTPRINT*
C
SIDE VIEW
SEATING
PLANE
5.56
1.76
b
1.30
2X
DIMENSIONS: MILLIMETERS
L
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
SURMETIC is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NS6A5.0AF/D