PANJIT PJE8406

PPJE8406
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
20 V
Current
800mA
SOT-523
Unit : inch(mm)
Features

RDS(ON), [email protected],IDS@500mA=0.4Ω

RDS(ON), [email protected],IDS@300mA=0.7Ω

RDS(ON), [email protected],IDS@100mA=1.2Ω(typ)

Advanced Trench Process Technology

Specially Designed for Load Switch or PWM application.

ESD Protected

Lead free in comply with EU RoHS 2011/65/EU directives.

Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data

Case: SOT-523 Package

Terminals : Solderable per MIL-STD-750, Method 2026

Approx. Weight: 0.00007 ounces, 0.002 grams

Marking: E06
o
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
+12
V
Continuous Drain Current
ID
800
mA
Pulsed Drain Current
IDM
3000
mA
350
mW
2.8
mW/ oC
Power Dissipation
TA=25oC
o
Derate above 25 C
Operating Junction and Storage Temperature Range
PD
TJ,TSTG
-55~150
RθJA
357
o
C
Thermal resistance
-
Junction to Ambient (Note 3)
April 19,2013-REV.00
o
C/W
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PPJE8406
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Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
20
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
0.4
0.7
1.1
V
VGS=4.5V,ID=500mA
-
0.35
0.4
VGS=2.5V,ID=300mA
-
0.6
0.7
Ω
VGS=1.8V,ID=100mA
-
1.2
Drain-Source On-State Resistance
RDS(on)
Zero Gate Voltage Drain Current
IDSS
VDS=16V,VGS=0V
-
0.02
1
uA
Gate-Source Leakage Current
IGSS
VGS=+10V,VDS=0V
-
+2
+10
uA
-
0.92
-
-
0.31
-
-
0.08
-
-
50
-
-
10
-
-
8.5
-
-
4
-
-
20
-
-
12
-
-
25
-
-
-
500
mA
0.91
1.3
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=10V, ID=500mA,
VGS=4.5V (Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
nC
pF
Switching
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDD=10V, ID=500mA,
VGS=4.5V,
RG=6Ω
(Note 1,2)
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
IS
VSD
--IS=500mA, VGS=0V
NOTES:
1. Pulse width<300us, Duty cycle<2%
2.
3.
Essentially independent of operating temperature typical characteristics.
RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
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PPJE8406
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
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PPJE8406
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
April 19,2013-REV.00
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PPJE8406
PART NO PACKING CODE VERSION
PART NO PACKING
Package Type
Packing type
Marking
Version
SOT-523
4K pcs / 7” reel
E06
Halogen free
CODE VERSION
PJE8406_R1_00001
ORDER INFORMATION
April 19,2013-REV.00
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PPJE8406
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April 19,2013-REV.00
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