IRF IRF6645PBF

IRF6645PbF
IRF6645TRPbF
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DirectFET™ Power MOSFET ‚
RoHS Compliant 
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
Halogen-Free
Typical values (unless otherwise specified)
VDSS
VGS
100V max ±20V max
Qg
tot
14nC
RDS(on)
28m@ 10V
Qgd
Vgs(th)
4.8nC
4.0V
DirectFET™ ISOMETRIC
SJ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
100
V
VGS
Gate-to-Source Voltage
±20
Parameter
e
e
@ 10V f
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
5.7
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
4.5
ID @ TC = 25°C
Continuous Drain Current, VGS
25
IDM
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
g
g
VGS, Gate-to-Source Voltage (V)
Typical R DS (on) (m)
ID = 3.4A
70
60
TJ = 125°C
50
40
TJ = 25°C
30
20
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
16
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
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45
h
80
© 2012 International Rectifier
A
29
mJ
3.4
A
12
ID= 3.4A
10
VDS = 80V
VDS= 50V
8
6
4
2
0
0
4
8
12
16
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 5.0mH, RG = 25, IAS = 3.4A.
July 25, 2012
IRF6645/TRPbF
Electrical Characteristic @ TJ = 25°C (unless otherwise specified)
Parameter
Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VDSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
28
35
m
VGS = 10V, ID = 5.7A i
VGS(th)
Gate Threshold Voltage
3.0
–––
4.9
V
VGS(th)/TJ
Gate Threshold Voltage Coefficient
–––
-12
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
7.4
–––
–––
Qg
IGSS
Total Gate Charge
–––
14
20
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.1
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
0.8
–––
VGS = 0V, ID = 250μA
VDS = VGS, ID = 50μA
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S
VDS = 10V, ID = 3.4A
VDS = 50V
nC
VGS = 10V
Qgd
Gate-to-Drain Charge
–––
4.8
7.2
ID = 3.4A
Qgodr
Gate Charge Overdrive
–––
5.3
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
5.6
–––
7.2
–––
nC

VDS = 16V, VGS = 0V
Qoss
Output Charge
–––
RG
Gate Resistance
–––
1.0
–––
td(on)
Turn-On Delay Time
–––
9.2
–––
VDD = 50V, VGS = 10Vi
tr
Rise Time
–––
5.0
–––
ID = 3.4A
td(off)
Turn-Off Delay Time
–––
18
–––
tf
Fall Time
–––
5.1
–––
Ciss
Input Capacitance
–––
890
–––
Coss
Output Capacitance
–––
180
–––
ns
RG=6.2
VGS = 0V
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
40
–––
ƒ = 1.0MHz
Coss
Output Capacitance
–––
870
–––
VGS = 0V, VDS = 1.0V, f=1.0MHz
Coss
Output Capacitance
–––
100
–––
VGS = 0V, VDS = 80V, f=1.0MHz
Min.
Typ.
Max.
–––
–––
25
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Units
MOSFET symbol
A
–––
–––
Conditions
D
showing the
G
integral reverse
45
S
p-n junction diode.
(Body Diode)g
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 3.4A, VGS = 0V i
trr
Reverse Recovery Time
–––
31
47
ns
TJ = 25°C, IF = 3.4A, VDD = 50V
Qrr
Reverse Recovery Charge
–––
40
60
nC
di/dt = 100A/μs c
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width  400μs; duty cycle  2%.
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July 25, 2012
IRF6645/TRPbF
Absolute Maximum Ratings
Parameter
PD @TC = 25°C
e
Power Dissipation e
Power Dissipation f
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Power Dissipation
PD @TA = 25°C
PD @TA = 70°C
Max.
Units
3.0
W
1.4
42
270
°C
-40 to + 150
Thermal Resistance
Parameter
el
Junction-to-Ambient jl
Junction-to-Ambient kl
Junction-to-Case fl
RJA
Typ.
Max.
–––
58
Junction-to-Ambient
RJA
RJA
RJC
RJ-PCB
12.5
–––
20
–––
–––
3.0
1.0
–––
Junction-to-PCB Mounted
Units
°C/W
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
R1
R1
0.02
1
J
0.01
J
1
R2
R2
2
1
R3
R3
R4
R4
AC

2
3
3
4
Ci= iRi
Ci= iRi
0.1
Ri (°C/W) i (sec)
R5
R5
4
5
C
5
0.6677
0.000066
1.0463
0.000896
1.5612
0.004386
29.2822
0.686180
25.4550 32
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
Notes:
‰ Mounted on minimum footprint full size board with metalized
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
Š Ris measured at TJ of approximately 90°C.
ˆ Used double sided cooling, mounting pad with large heatsink.
ƒ Surface mounted on 1 in. square Cu
board (still air).
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‰ Mounted to a PCB with
small clip heatsink (still air)
© 2012 International Rectifier
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
July 25, 2012
IRF6645/TRPbF
100
100
BOTTOM
10
6.0V
1
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
BOTTOM
10
6.0V
60μs PULSE WIDTH
60μs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
100
2.0
ID = 5.7A
VDS = 10V
10
Typical RDS(on) (Normalized)
60μs PULSE WIDTH
ID, Drain-to-Source Current )
VGS
15V
10V
8.0V
7.0V
6.0V
TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VGS = 10V
1.5
1.0
0.1
4.0
5.0
6.0
7.0
0.5
8.0
-60 -40 -20 0
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
10000
60
VGS = 8.0V
(m
DS(on)
Coss
Typical R
C, Capacitance(pF)
Ciss
100
TA= 25°C
VGS = 7.0V
Coss = Cds + Cgd
Crss
50
VGS = 10V
VGS = 15V
40
30
20
10
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
1000
20 40 60 80 100 120 140 160
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0
10
20
30
40
50
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs. Drain Current
July 25, 2012
IRF6645/TRPbF
1000
TJ = 150°C
TJ = 25°C
TJ = -40°C
10.0
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100.0
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100μsec
10
1msec
1
TA = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.1
1.0
10.0
100.0
1000.0
VDS , Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
6.0
VGS(th) Gate threshold Voltage (V)
6.0
5.0
ID , Drain Current (A)
10msec
4.0
3.0
2.0
1.0
5.5
5.0
4.5
4.0
3.5
ID = 1.0A
ID = 1.0mA
3.0
ID = 50μA
ID = 250μA
2.5
2.0
0.0
25
50
75
100
125
-75
150
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( °C )
TJ , Ambient Temperature (°C)
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
Fig 12. Maximum Drain Current vs. Ambient Temperature
EAS, Single Pulse Avalanche Energy (mJ)
120
ID
1.5A
2.4A
BOTTOM 3.4A
TOP
100
80
60
40
20
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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© 2012 International Rectifier
July 25, 2012
IRF6645/TRPbF
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
S
Qgs1 Qgs2
Fig 15a. Gate Charge Test Circuit
Qgd
Qgodr
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
tp
+
V
- DD
IAS
A
I AS
0.01
tp
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
VDS
RD
VDS
90%
VGS
D.U.T.
RG
+
- VDD
10V
10%
VGS
td(on)
Pulse Width µs
tr
td(off)
tf
Duty Factor 
Fig 17a. Switching Time Test Circuit
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Fig 17b. Switching Time Waveforms
July 25, 2012
IRF6645/TRPbF
D.U.T
Driver Gate Drive
+
ƒ
+
‚
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
di/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
-
Ripple  5%
ISD
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, SJ Outline
(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
D
G
D
S
S
D
D
G = GATE
D = DRAIN
S = SOURCE
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© 2012 International Rectifier
July 25, 2012
IRF6645/TRPbF
DirectFET™ Outline Dimension, SJ Outline
(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX MIN
CODE MIN
MAX
4.85 0.187
A
4.75
0.191
3.95 0.146
B
3.70
0.156
2.85 0.108
C
2.75
0.112
0.45 0.014
D
0.35
0.018
0.62 0.023
E
0.58
0.024
0.62 0.023
F
0.58
0.024
0.72 0.027
G
0.68
0.028
0.72 0.027
H
0.68
0.028
K
0.98 1.02 0.039
0.040
2.32 0.090
L
2.28
0.091
M
0.616 0.676 0.0235 0.0274
R
0.020 0.080 0.0008 0.0031
0.17 0.003
P
0.08
0.007
DirectFET™ Part Marking
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© 2012 International Rectifier
July 25, 2012
IRF6645/TRPbF
DirectFET™ Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6645TRPBF). For 1000 parts on 7"
reel, order IRF6645TR1PBF
STANDARD OPTION
METRIC
CODE
MIN
MAX
A
330.0
N.C
B
20.2
N.C
C
12.8
13.2
D
1.5
N.C
E
100.0
N.C
F
N.C
18.4
G
12.4
14.4
H
11.9
15.4
REEL DIMENSIONS
(QTY 4800)
TR1 OPTION (QTY 1000)
IMPERIAL
METRIC
IMPERIAL
MIN
MIN
MAX
MAX
MIN
MAX
12.992
6.9
N.C
N.C
177.77 N.C
0.795
0.75
N.C
19.06
N.C
N.C
0.504
0.53
0.50
0.520
13.5
12.8
0.059
0.059
N.C
1.5
N.C
N.C
3.937
2.31
58.72
N.C
N.C
N.C
N.C
N.C
0.53
N.C
0.724
13.50
0.488
0.47
11.9
N.C
0.567
12.01
0.469
0.47
11.9
N.C
0.606
12.01
Loaded Tape Feed Direction
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
IMPERIAL
METRIC
MIN
MAX
MIN
MAX
0.311
0.319
7.90
8.10
0.154
0.161
3.90
4.10
0.469
0.484
11.90
12.30
0.215
0.219
5.45
5.55
0.158
0.165
4.00
4.20
0.197
0.205
5.00
5.20
0.059
N.C
1.50
N.C
0.059
0.063
1.50
1.60
.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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July 25, 2012