AVAGO VMMK-2503

VMMK-2503
1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package
Data Sheet
Description
Features
Avago’s VMMK-2503 is an easy-to-use broadband, high
linearity amplifier in a miniaturized wafer level package
(WLP). The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a
transmitter driver in many applications from 1–12GHz. A 5V,
65mA power supply is required for optimal performance.
x 1 x 0.5 mm Surface Mount Package
This amplifier is fabricated with enhancement E-pHEMT
technology and industry leading wafer level package. The
GaAsCap wafer level package is small and ultra thin yet
can be handled and placed with standard 0402 pick and
place assembly. This product is easy to use since it requires
only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 :
systems.
x RoHS6 + Halogen Free
x Ultrathin (0.25mm)
x Unconditionally Stable
x Ultrawide Bandwidth
x Gain Block or Driver Amplifier
Typical Performance (Vdd = 5.0V, Idd = 65mA)
x Output IP3: 27dBm
x Small-Signal Gain: 13.5dB
x Noise Figure: 3.4dB
Applications
WLP 0402, 1mm x 0.5mm x 0.25 mm
x 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook
computer, access point and mobile wireless
applications
GY
x 802.16 & 802.20 BWA systems
x Radar, radio and ECM systems
x UWB
Pin Connections (Top View)
Input
Input
Note:
“G” = Device Code
“Y” = Month Code
GY
Amp
Output / Vdd
Output
/ Vdd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Table 1. Absolute Maximum Ratings [1]
Sym
Parameters/Condition
Unit
Absolute Max
Vd
Supply Voltage (RF Output) [2]
V
6
Id
Device Current [2]
mA
120
Pin, max
CW RF Input Power (RF Input) [3]
dBm
+20
Pdiss
Total Power Dissipation
mW
720
Tch
Max channel temperature
°C
150
TSTG
Storage Temperature
°C
150
Tjc
Thermal Resistance [4]
°C/W
140
Notes
1. Operation of this device above any one of these parameters may cause permanent damage
2. Bias is assumed DC quiescent conditions
3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C
4. Thermal resistance is measured from junction to board using IR method
Table 2. DC and RF Specifications
TA= 25°C, Frequency = 6 GHz, Vd = 5V, Id = 65mA, Zin = Zout = 50: (unless otherwise specified)
Sym
Parameters/Condition
Unit
Id
Device Current
mA
NF[1,2]
Noise Figure
dB
Ga [1,2]
Associated Gain
dB
OIP3 [1,2,3]
Output 3rd Order Intercept
P-1dB[1,2]
Typ.
Maximum
68
88
–
3.04
4.1
12.5
13.5
18
dBm
+27
–
Output Power at 1dB
Gain Compression
dBm
+17
–
IRL [1,2]
Input Return Loss
dB
–
-14
–
ORL [1,2]
Output Return Loss
dB
–
-20
–
Notes:
1. Losses of test systems have been de-embedded from final data
2. Measure Data obtained from wafer-probing
3. OIP3 test condition: F1 = 6.0GHz, F2 = 6.01GHz, Pin = -20dBm
2
Minimum
Product Consistency Distribution Charts at 6.0 GHz, Vd = 5 V
Id @ 5V, Mean=68mA, USL=88mA
Gain @ 6GHz, Mean=13.5dB, LSL=12.5dB, USL=18dB
Note: Distribution data based on ~50Kpcs sample size from MPV lots.
3
[email protected] 6GHZ, Mean=3.04dB, USL=4.1dB
VMMK-2503 Typical Performance
20
5
15
4
NoiseFigure (dB)
S21 (dB)
(TA = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50 : unless noted)
10
2
5
0
3
1
1
3
5
7
9
Frequency (GHz)
11
1
13
Figure 1. Small-signal Gain [1]
3
5
7
9
Frequency (GHz)
11
13
5
7
9
Frequency (GHz)
11
13
5
7
9
Frequency (GHz)
11
13
Figure 2. Noise Figure [1]
0
0
-5
S12 (dB)
S11 (dB)
-10
-10
-20
-15
-20
-30
1
3
5
7
9
Frequency (GHz)
11
13
Figure 3. Input Return Loss [1]
1
3
Figure 4. Isolation [1]
0
IP3 & P1dB (dBm)
40
S22 (dB)
-10
-20
30
20
10
OIP3
OP1dB
-30
1
3
5
Figure 5. Output Return Loss [1]
7
9
Frequency (GHz)
11
13
0
1
3
Figure 6. Output IP3 [1,2]
Notes:
1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package
2. Output IP3 data taken at Pin=-15dBm
4
VMMK-2503 Typical Performance (continue)
(TA = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50 : unless noted)
20
70
60
50
40
10
Idd (mA)
S21 (dB)
15
5
20
5V
4.5V
4V
10
0
1
3
30
5
7
9
Frequency (GHz)
11
0
13
Figure 7. Gain over Vdd [1]
1
2
3
Vdd (V)
4
5
Figure 8. Total Current [1]
4.5
0
NoiseFigure (dB)
4
S11 (dB)
-10
-20
5V
4.5V
4V
3.5
3
5V
4.5V
4V
2.5
2
-30
1
3
5
7
9
Frequency (GHz)
11
13
Figure 9. Input Return Loss over Vdd [1]
1
3
5
7
9
Frequency (GHz)
11
13
Figure 10. Noise Figure over Vdd [1]
0
25
5V
4.5V
4V
4V
4.5V
5V
20
S22 (dB)
OP1dB (dBm)
-10
-20
15
10
-30
5
1
3
5
7
9
Frequency (GHz)
Figure 11. Output Return Loss Over Vdd [1]
11
13
1
3
7
9
Frequency (GHz)
Figure 12. Output P1dB Over Vdd [1]
Note:
1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package
5
5
11
13
VMMK-2503 Typical Performance (continue)
(TA = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50 : unless noted)
40
20
OP1dB (dBm)
OIP3 (dBm)
30
20
10
25C
-40C
85C
4V
4.5V
5V
10
0
5
1
3
5
7
9
Frequency (GHz)
11
13
Figure 13. Output P1dB over Temp [3]
1
20
5
15
4
10
25C
85C
-40C
5
3
5
7
9
Frequency (GHz)
11
3
-45C
25C
85C
2
1
0
1
3
5
7
9
Frequency (GHz)
11
1
13
Figure 15. Gain over Temp [3]
3
5
7
9
Frequency (GHz)
11
13
Figure 16. Noise Figure over Temp [3]
0
0
25C
-40C
85C
25C
-40C
85C
-10
S11 (dB)
S22 (dB)
-10
-20
-20
-30
1
3
5
7
9
Frequency (GHz)
Figure 17. Input Return Loss Over Temp [3]
11
13
-30
1
3
5
7
9
Frequency (GHz)
Figure 18. Output Return Loss Over Temp [3]
Notes:
1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package
2. Output IP3 data taken at Pin=-15dBm
3. Over temp data taken on a test fixture (Figure 20) without de-embedding
6
13
Figure 14. Output IP3 over Vdd [1,2]
NoiseFigure (dB)
S21 (dB)
15
11
13
VMMK-2503 Typical S-parameters
(TA = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50: unless noted)
7
Freq
GHz
S11
S21
S12
S22
Mag
dB
Phase
Mag
dB
Phase
Mag
dB
Phase
Mag
dB
Phase
1
0.32
-9.94
-58.82
5.73
15.16
157.97
0.10
-20.26
17.70
0.11
-19.18
-82.09
2
0.19
-14.31
-63.36
5.34
14.54
146.59
0.10
-19.58
6.88
0.08
-21.51
-116.84
3
0.16
-15.75
-62.41
5.22
14.35
133.94
0.11
-19.32
1.32
0.09
-21.40
-127.88
4
0.17
-15.65
-68.23
5.13
14.20
120.62
0.11
-19.14
-2.44
0.09
-20.96
-135.63
5
0.17
-15.19
-75.79
5.02
14.02
106.87
0.11
-18.91
-5.92
0.09
-21.32
-144.09
6
0.18
-14.78
-87.11
4.90
13.80
93.04
0.12
-18.67
-9.42
0.08
-21.68
-155.26
7
0.19
-14.44
-99.64
4.75
13.54
79.16
0.12
-18.45
-13.07
0.08
-21.97
-166.36
8
0.20
-14.12
-114.81
4.58
13.23
65.36
0.12
-18.22
-17.02
0.08
-22.44
-177.07
9
0.20
-14.04
-131.20
4.40
12.87
51.67
0.13
-18.04
-21.15
0.07
-23.45
171.57
10
0.20
-13.87
-150.35
4.19
12.44
38.17
0.13
-17.87
-25.41
0.06
-25.01
159.23
11
0.21
-13.60
-169.56
3.97
11.98
24.99
0.13
-17.74
-29.85
0.04
-26.97
144.70
12
0.22
-13.03
169.40
3.75
11.48
12.06
0.13
-17.67
-34.27
0.03
-29.82
128.66
13
0.24
-12.24
149.90
3.53
10.94
-0.50
0.13
-17.60
-38.63
0.02
-33.72
105.68
14
0.27
-11.38
131.14
3.30
10.38
-12.65
0.13
-17.58
-43.09
0.01
-38.20
58.43
15
0.30
-10.41
115.07
3.09
9.79
-24.56
0.13
-17.53
-47.40
0.01
-37.52
-7.15
16
0.34
-9.46
99.90
2.88
9.19
-36.14
0.13
-17.52
-51.43
0.02
-35.60
-43.96
17
0.37
-8.69
86.76
2.68
8.57
-47.41
0.13
-17.48
-55.43
0.02
-34.56
-75.88
18
0.40
-7.97
74.14
2.50
7.95
-58.26
0.14
-17.38
-59.63
0.02
-32.77
-114.10
19
0.43
-7.25
63.67
2.33
7.33
-68.81
0.14
-17.30
-63.51
0.04
-29.02
-141.61
20
0.46
-6.81
53.97
2.17
6.73
-79.06
0.14
-17.17
-67.56
0.05
-25.71
-158.63
21
0.48
-6.34
44.61
2.03
6.14
-89.16
0.14
-16.98
-71.95
0.07
-23.24
-171.34
22
0.50
-5.99
36.42
1.90
5.56
-99.02
0.14
-16.80
-76.07
0.09
-21.38
176.10
23
0.52
-5.75
28.20
1.78
5.00
-108.79
0.15
-16.51
-80.97
0.10
-19.69
163.29
24
0.52
-5.60
20.04
1.67
4.45
-118.23
0.15
-16.27
-85.94
0.13
-17.99
152.12
25
0.53
-5.44
11.74
1.58
3.95
-127.94
0.16
-15.93
-91.73
0.15
-16.23
141.89
26
0.54
-5.31
3.35
1.49
3.44
-137.60
0.17
-15.63
-97.31
0.18
-15.01
131.61
27
0.55
-5.25
-4.75
1.40
2.92
-147.29
0.17
-15.30
-103.67
0.21
-13.76
122.83
28
0.55
-5.18
-13.14
1.32
2.41
-156.96
0.18
-14.97
-110.73
0.23
-12.60
115.49
29
0.56
-5.10
-21.24
1.24
1.87
-166.74
0.19
-14.65
-117.22
0.25
-11.87
107.66
30
0.56
-4.97
-28.87
1.17
1.37
-176.51
0.19
-14.44
-125.53
0.27
-11.27
98.81
31
0.57
-4.86
-37.32
1.10
0.85
173.80
0.20
-14.07
-133.23
0.29
-10.66
91.12
32
0.58
-4.73
-45.58
1.04
0.33
163.80
0.20
-13.82
-141.57
0.31
-10.18
82.29
33
0.59
-4.57
-53.12
0.98
-0.20
153.80
0.21
-13.63
-150.48
0.32
-9.78
72.68
34
0.61
-4.32
-60.88
0.92
-0.73
143.95
0.22
-13.32
-159.58
0.34
-9.35
64.58
35
0.63
-4.08
-68.98
0.86
-1.32
133.28
0.22
-13.22
-169.26
0.35
-9.07
55.81
36
0.64
-3.86
-75.63
0.81
-1.87
123.11
0.22
-13.01
-179.29
0.37
-8.67
45.15
VMMK-2503 Application and Usage
Biasing and Operation
The VMMK-2503 is normally biased with a positive drain
supply connected to the output pin through an external
bias-tee and with bypass capacitors as shown in Figure
19. The recommended drain supply voltage is 5 V and the
corresponding drain current is approximately 65mA. The
input of the VMMK-2503 is AC coupled and a DC-blocking
capacitor is not required. Aspects of the amplifier performance may be improved over a narrower bandwidth by
application of additional conjugate, linearity, or low noise
(*opt) matching.
Figure 20. Evaluation/Test Board (available to qualified customer request)
Vdd
0.1 uF
Vdd
100 pF
0.1 uF
Size: 1.1 mm x 0.6 mm (0402 component)
100 pF
10 nH
Input
Size: 1.1 mm x 0.6 mm (0402 component)
Output
Amp
Input
Output
Input
Pad
Ground
Pad
Output
Pad
100 pF
Amp
Input
Pad
50 Ohm line
Ground
Pad
50 Ohm line
Output
Pad
50 Ohm line
Figure 19. Usage of the VMMK-2503
Biasing the device at 5V compared to 4V results in higher
gain, higher IP3 and P1dB. In a typical application, the biastee can be constructed using lumped elements. The value
of the output inductor can have a major effect on both
low and high frequency operation. The demo board uses
an 10nH inductor that has self resonant frequency higher
than the maximum desired frequency of operation. At
frequencies higher than 6GHz, it may be advantageous to
use a quarter-wave long micro-strip line to act as a highimpedance at the desired frequency of operation. This
technique proves a good solution but only over relatively
narrow bandwidths.
Another approach for broadbanding the VMMK-2503 is
to series two different value inductors with the smaller
value inductor placed closest to the device and favoring
the higher frequencies. The larger value inductor will then
offer better low frequency performance by not loading
the output of the device. The parallel combination of the
100pF and 0.1uF capacitors provide a low impedance
in the band of operation and at lower frequencies and
should be placed as close as possible to the inductor. The
low frequency bypass provides good rejection of power
supply noise and also provides a low impedance termination for third order low frequency mixing products
that will be generated when multiple in-band signals are
injected into any amplifier.
8
50 Ohm line
Bias-Tee
Figure 21. Example application of VMMK-2503 at 5.8GHz
Refer the Absolute Maximum Ratings table for allowed DC
and thermal conditions.
S Parameter Measurements
The S parameters are measured on a 300um G-S-G
(ground signal ground) printed circuit board substrate.
Calibration is achieved with a series of through, short
and open substrates from which an accurate set of S parameters is created. The test board is .016 inch thickness
RO4350. Grounding of the device is achieved with a single
plated through hole directly under the device. The effect
of this plated through hole is included in the S parameter
measurements and is difficult to de-embed accurately.
Since the maximum recommended printed circuit board
thickness is nominally .020 inch, then the nominal effect
of printed circuit board grounding can be considered to
have already been included the published S parameters.
The product consistency distribution charts shown on
page 2 represent data taken by the production wafer probe
station using a 300um G-S wafer probe. The ground-signal
probing that is used in production allows the device to be
probed directly at the device with minimal common lead
inductance to ground. Therefore there will be a slight difference in the nominal gain obtained at the test frequency
using the 300um G-S wafer probe versus the 300um G-S-G
printed circuit board substrate method.
Outline Drawing
Recommended SMT Attachment
Top and Side View
The VMMK Packaged Devices are compatible with high
volume surface mount PCB assembly processes.
Manual Assembly for Prototypes
1. Follow ESD precautions while handling packages.
GY
0.5 mm
2. Handling should be along the edges with tweezers or
from topside if using a vacuum collet.
0.25mm
1.05mm
3. Recommended attachment is solder paste. Please
see recommended solder reflow profile. Conductive
epoxy is not recommended. Hand soldering is not
recommended.
4. Apply solder paste using either a stencil printer or
dot placement. The volume of solder paste will be
dependent on PCB and component layout and should
be controlled to ensure consistent mechanical and
electrical performance. Excessive solder will degrade RF
performance.
Bottom View
0.8mm
0.7mm
0.3mm
5. Follow solder paste and vendor’s recommendations
when developing a solder reflow profile. A standard
profile will have a steady ramp up from room
temperature to the pre-heat temp to avoid damage
due to thermal shock.
0.2mm
0.5mm
6. Packages have been qualified to withstand a peak
temperature of 280qC for 15 sec. Verify that the profile
will not expose device beyond these limits.
Notes:
1. x indicates pin 1
2. Dimensions are in millimeters
3. Pad Material is minimum 5.0 um thick Au
Suggested PCB Material and Land Pattern
.014 [0.356]
.014 [0.356]
.022 [0.559]
.010 [0.254]
.020 [0.508]
7. Clean off flux per vendor’s recommendations.
8. Clean the module with Acetone. Rinse with alcohol.
Allow the module to dry before testing.
Note: These devices are ESD
sensitive. The following precautions are strongly recommended. Ensure that an ESD approved
carrier is used when die are transported from one destination to
another. Personal grounding is
to be worn at all times when handling these devices.
For more detail, refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
.005 [0.127]
.008 [0.203]
Notes:
1. 0.010” Rogers RO4350
9
Ordering Information
Part Number
Devices Per
Container
Container
VMMK-2503-BLKG
100
Antistatic Bag
VMMK-2503-TR1G
5000
7” Reel
Package Dimension Outline
D
E
A
Symbol
Min (mm)
Max (mm)
E
0.500
0.566
D
1.004
1.066
A
0.235
0.265
Note:
All dimensions are in mm
Reel Orientation
Device Orientation
4 mm
REEL
xGY
xGY
TOP VIEW
CARRIER TAPE
10
xGY
xGY
USER FEED
DIRECTION
8 mm
END VIEW
Tape Dimensions
T
Note: 2
P2
Do
Note: 1
Po
B
A
Scale 5:1
Bo
W
B
P1
BB SECTION
A
Note: 2
F
E
5° (Max)
D1
Ao
R0.1
5° (Max)
Ko
Ao = 0.73±0.05 mm
Scale 5:1
Bo = 1.26±0.05 mm
AA SECTION
mm
Ko = 0.35 +0.05
+0
Unit: mm
Symbol
Spec.
K1
Po
P1
P2
Do
D1
E
F
10Po
W
T
–
4.0±0.10
4.0±0.10
2.0±0.05
1.55±0.05
0.5±0.05
1.75±0.10
3.50±0.05
40.0±0.10
8.0±0.20
0.20±0.02
Notice:
1. 10 Sprocket hole pitch cumulative tolerance is ±0.1mm.
2. Pocket position relative to sprocket hole measured as true position
of pocket not pocket hole.
3. Ao & Bo measured on a place 0.3mm above the bottom of the
pocket to top surface of the carrier.
4. Ko measured from a plane on the inside bottom of the pocket to
the top surface of the carrier.
5. Carrier camber shall be not than 1m per 100mm through a length
of 250mm.
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2010 Avago Technologies. All rights reserved.
AV02-2004EN - July 7, 2010