Advance Technical Information IXTH 50N30 IXTT 50N30 High Current Power MOSFET VDSS ID25 = 300 V = 50 A Ω = 65 mΩ RDS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 50 A IDM TC = 25°C, pulse width limited by TJM 200 A IAR TC = 25°C 50 A EAR TC = 25°C 50 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TO-247 (IXTH) (TAB) TO-268 (IXTT) G S D (TAB) TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (TO-247) Weight TO-247 TO-268 1.13/10 Nm/lb.in. 6 5 g g G = Gate S = Source Features z z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 300 VGS(th) V DS = VGS, ID = 250µA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V 4.0 V nA TJ = 25°C TJ = 125°C 25 250 µA µA VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 65 mΩ © 2003 IXYS All rights reserved International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z ±100 D = Drain TAB = Drain z Easy to mount Space savings High power density DS99011A(08/03) IXTH 50N30 IXTT 50N30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 36 S 4400 pF 700 pF C rss 240 pF td(on) 24 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 24 tr V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 33 ns td(off) RG = 2 Ω (External) 70 ns 17 ns 165 nC 30 nC 80 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.31 (TO-247) Source-Drain Diode 0.21 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 50 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V Trr IF = 25A -di/dt = 100 A/µs VR = 100V QRM 360 ns 4.0 µC TO-247 Outline 1 2 Terminals: 1 - Gate 3 - Source Dim. 3 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTH 50N30 IXTT 50N30 Fig. 2. Extended Output Characteristics @ 25 deg. C Fig. 1. Output Characteristics @ 25 Deg. C 50 140 VGS = 10V 9V 8V 7V VGS = 10V 9V 8V 120 100 ID - Amperes ID - Amperes 40 6V 30 20 5V 10 7V 80 60 6V 40 5V 20 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 V DS - Volts 3 12 15 Junction Temperature @ 125 Deg. C 3 50 VGS = 10V 9V 8V 7V VGS = 10V RDS(on) - Normalized 40 ID - Amperes 9 Fig. 4. RDS(on) Normalized to ID25 Value vs. Fig. 3. Output Characteristics 6V 30 20 5V 10 2.5 2 ID = 50A 1.5 ID = 25A 1 0.5 0 0 1 2 3 4 5 6 7 -50 8 -25 V DS - Volts 25 50 75 100 125 150 Fig. 6. Drain Current vs. Case Temperature Value vs. I D 60 3.4 VGS = 10V 3 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D25 50 2.6 ID - Amperes RDS(on) - Normalized 6 V DS - Volts T J = 125ºC 2.2 1.8 1.4 1 40 30 20 10 T J = 25ºC 0.6 0 0 20 40 60 80 ID - Amperes © 2003 IXYS All rights reserved 100 120 140 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTH 50N30 IXTT 50N30 Fig. 8. Transconductance 100 75 80 60 Gfs - Siemens ID - Amperes Fig. 7. Input Admittance 60 T J = -40ºC 25ºC 125ºC 40 T J = -40ºC 25ºC 125ºC 45 30 15 20 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 20 40 V GS - Volts 80 100 120 140 150 175 Fig. 10. Gate Charge 150 10 125 8 100 VGS - Volts IS - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 75 T J = 125ºC 50 60 ID - Amperes T J = 25ºC VDS = 150V ID = 25A IG = 10mA 6 4 2 25 0 0 0.4 0.55 0.7 0.85 1 1.15 1.3 0 V SD - Volts 25 50 75 100 125 QG - nanoCoulombs Fig. 11. Capacitance 1 10000 Fig. 12. Maximum Transient Thermal Resistance C iss R(th)JC - (ºC/W) Capacitance - pF f = 1M Hz 1000 C oss 0.1 C rss 100 0.01 0 5 10 15 20 25 V DS - Volts 30 35 40 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343