SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTOR ZUMT918 ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL – T5 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 3 V Continuous Collector Current IC 100 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 30 TYP. MAX. V IC=1µA, IE=0 Collector-Emitter Sustaining Voltage VCEO(sus) 15 V IC=3mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 3 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 0.05 µA VCB=15V, IE=0 Collector-Emitter Saturation Voltage VCE(sat) 0.4 V IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=10mA, IB=1mA Static Forward Current Transfer Ratio hFE 20 Transition Frequency fT 600 Output Capacitance Cobo Input Capacitance Cibo Noise Figure N Common Emitter Power Gain Gpe IC=3mA, VCE=1V MHz IC=4mA, VCE=10V f=100MHz pF pF VCB=0V, f=1MHz VCB=10V, f=1MHz 1.6 pF VEB=0.5V,f=1MHz 6.0 dB VCE=6V, IC=1mA f=60MHz, RG=400Ω dB VCB=12V, IC=6mA f=200MHz 3.0 1.7 15 *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device