TOREX XC9401

XC9401 Series
ETR3201-006
Off-line Controllers for LED Lighting
■GENERAL DESCRIPTION
The XC9401 series are off-line controller ICs for LED lighting. Through optimization of the external components, these ICs
can be made to operate in a range from 85VAC to 270VAC, as well as by DC input, and a diversity of specifications can be
achieved by selecting components appropriate for the circuit configuration. Fixed off-time control is used for the basic control
method, and by detecting the current that flows to the external power MOSFET, the current that flows to the LED is monitored
to provide a stable power supply for LED lighting. Two product series differing by function type are available, the XC9401A
type and the XC9401B type.
The circuit configuration of type A is designed for the power factor, achieving a high power factor by synchronizing the LED
current to the input current (sine wave). In this circuit configuration, a high-capacity, high-withstand voltage electrolytic
capacitor is not necessary after the bridge rectifier circuit from the AC input. The input filter removes high frequency switching
noise from the AC line, allowing a small-capacity ceramic capacitor to be used.
Type B holds the peak current due to switching that flows to the external power MOSFET constant, enabling the LED
current to be kept constant. By keeping the LED current constant, this circuit configuration makes it possible to achieve a
stable light source with high efficiency.
■TYPICAL APPLICATION CIRCUITS
■APPLICATIONS
●LED lights ( <=10W )
●LED lamps
●LED tube lights
●LED spot lights
●LED stands
(XC9401B605MR-G 100VAC Non-isolation buck Type)
L1
1mH
100VAC
/110VAC
R5
33kΩ
BR1
B4S
C1
0.1μF/250V
■FEATURES
+
R6
33kΩ
C2
10μF/250V
C3
10μF/25V
Operating Voltage
:
85VAC ~ 270VAC
VDD Input Voltage Range
:
9V ~ 15V
Fixed Off-time
Protection Circuits
:
6.0μs
:
Thermal Shutdown 150oC (TYP.)
D1
RF071M2S
C4
1uF/100V
LED
20Series/110mA
ZD1
12V
L2
3.3mH
NF
VDD Over voltage protection, VDD=18V (TYP.)
Dimming
:
UVLO, VDD=6.5V (TYP.)
Over current protection
VISEN=0.7V (TYP.)
PWM Dimming
Package
Operating
Ambient Temperature
Environmentally Friendly
:
SOT-26
:
-40oC ~ +85oC
:
EU RoHS Compliant, Pb Free
EN/DIM
VDD
GATE
R7
20Ω
Q1
IPD60R3K3C6
ISEN
R3
2.2Ω
GND
R4
JP
■SOLUTION EXAMPLES
Input Voltage
Product Type
Isolation / Non-Isolation
Topology
Efficiency
Power Factor
100VAC / 110VAC
XC9401B605MR
Non-Isolation
Buck
91%
0.6
Isolation
Flyback
83%
0.6
82%
0.9
XC9401B605MR
Non-Isolation
Buck
87%
0.6
XC9401B605MR
-
Buck
88%
-
XC9401B605MR
-
Buck-Boost
86%
-
220VAC / 240VAC
220VAC / 240VAC
DC / 12VAC
XC9401B605MR
XC9401A605MR
*Due to dispersion of constant values of external components, the above values may be deviated.
Please understand that the above are typical values. For details, refer to the XC9401 Series Application Notes.
1/19
XC9401Series
■BLOCK DIAGRAM
1) XC9401 Series, Type A
VDD
VREF
(Bandgap reference)
Voltage Regulator
5V
to Internal Circuits
Thermal Shutdown
150℃
180Ω
UVLO
6.5V / 7.5V
EN/DIM
OVP
16.5V / 18V
Off Time Controller
140μs
(Over Current Limit)
EN/DIM
&
DELAY
Off Time Controller
6μs
Min. ON Time
Controller
VSINE
Buffer
Drive
&
Voltage
Level
Shifter
Logic
GATE
0.7V
×0.2783
CMP
PWMCMP
GND
ISEN
Over Current Limit
2) XC9401 Series, Type B
VDD
VREF
(Bandgap reference)
Voltage Regulator
5V
to Internal Circuits
Thermal Shutdown
150℃
180Ω
UVLO
6.5V / 7.5V
EN/DIM
OVP
16.5V / 18V
Off Time Controller
140μs
(Over Current Limit)
EN/DIM
&
DELAY
Off Time Controller
6μs
Min. ON Time
Controller
NF
Buffer
Drive
&
Voltage
Level
Shifter
Logic
GATE
0.7V
×0.2783
PWMCMP
CMP
GND
ISEN
Over Current Limit
2/19
XC9401
Series
■ PRODUCT CLASSIFICATION
●Ordering Information
XC9401①②③④⑤⑥-⑦
DESIGNATOR
ITEM
①
Type
A
DESCRIPTION
Refer to Selection Guide
B
②
OFF Time
6
OFF Time is fixed in 6μs
③④
Accuracy
05
ISEN Voltage Accuracy is ±5%
⑤⑥-⑦
(*1)
SYMBOL
Package
(*1)
(Order Unit)
MR-G
SOT-26 (3,000/Reel)
The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
●Selection Guide
TYPE
COMPARISON WITH ISEN
PWM DIMMING
A
"VSINE" × 0.2783
"VREF" × 0.278
Yes
Yes
B
DESCRIPTION
Type A is suitable for PFC circuit.
Type B is suitable for constant LED current circuit.
■PIN CONFIGURATION
*Type A
*Type B
■PIN ASSIGNMENT
PIN NUMBER
PIN NAME
FUNCTIONS
1
ISEN
Current Feedback
2
VDD
Power Input
3
GATE
External Power MOS Drive
4
EN/DIM
Active / Stand-by / PWM Dimming Control
SOT-26
5
GND
Ground
6
Type A: VSINE
Type B: NF
VSINE Pin: Current Feedback Reference Voltage Input.
NF Pin: No Function. Please connect to GND.
3/19
XC9401Series
■FUNCTION
PIN NAME
EN/DIM
STATUS
L
Stand-by Mode
H
Active Mode
EN/DIM
OPEN
(*1)
Undefined State
(*1)
Prohibited in the XC9401 series due to undefined operation.
■ABSOLUTE MAXIMUM RATINGS
o
Ta=25 C
PARAMETER
SYMBOL
RATINGS
UNITS
VDD Pin Voltage
VDD
-0.3 ~ +19.4
V
EN/DIM Pin Voltage
VENDIM
-0.3 ~ +19.4
GATE Pin Voltage
VMODE
ISEN Pin Voltage
VISEN
VSINE Pin Voltage
VSINE
NF Pin Voltage
VNF
-0.3 ~ VDD+0.3 or +19.4
V
(*2)
V
-0.3 ~ 5.5
V
-0.3 ~ 5.5
mA
Pd
250
mW
Operating Ambient Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-55 ~ +125
℃
Power Dissipation
SOT-26
(*1)
All voltages are described based on GND.
(*2)
The maximum value should be either VDD+0.3 or +19.4V in the lowest.
4/19
XC9401
Series
■ELECTRICAL CHARACTERISTICS
Ta=25 oC
XC9401 Series, Type A
PARAMETER
SYMBOL
VDD Voltage Range
VDD
ISEN Voltage
VISEN
VSINE Voltage Range
(*2)
CONDITIONS
VISEN=SWEEP
(*1)
, VSINE =1V
VSINE
UVLO Detect Voltage
VUVLO
MIN.
TYP.
MAX.
UNITS
CIRCUIT
9
-
15
V
①
0.2644
0.2783
0.2922
V
①
GND
-
1.8
V
①
VDD=SWEEP
(*3)
5.5
6.5
7.5
V
①
(*4)
UVLO Release Voltage
VUVLOR
VDD=SWEEP
6.5
7.5
8.5
V
①
UVLO Hysteresis Width
VUVLOH
VUVLOH=VUVLOR - VUVLO
-
1.1
-
V
①
VDD=VEN/DIM=15V
-
250
300
μA
①
-
225
280
μA
①
Supply Current
(*5)
Stand-by Current
IDD
(*6)
ISTB
VDD Overvoltage Protection Voltage
VDD Overvoltage Protection
Release Voltage
VDD Overvoltage Protection
Hysteresis Width
VDD Overvoltage Protection
Discharge Current
(*7)
VOVP
VDD=SWEEP
(*3)
, VEN/DIM=VDD
17
18
19
V
①
VOVPR
VDD=SWEEP
(*4)
, VEN/DIM=VDD
15.5
16.5
17.5
V
①
VOVPH
VOVPH=VOVP - VOVPR
-
1.5
-
V
①
VDD=19V
-
30
-
mA
①
2
5
8
Ω
③
-
5
-
Ω
④
IOVP
GATE “H” ON Resistance
RGATEH
GATE “L” ON Resistance
RGATEL
OFF Time
(*9)
tOFF
Minimum ON Time
Current Limit Voltage
tONMIN
(*10)
Thermal Shutdown Temperature
(*11)
Thermal Shutdown Release
Temperature
Thermal Shutdown Hysteresis Width
VDD=15V, VEN/DIM=GND,
VSINE=GND
VLIM
IGATE = -10mA
RGATEH = (VDD-VGATE) / IGATE
VISEN=1V, R1=300Ω
RGATEL= VGATE / IR1
(*8)
VISEN=0.4V, VSINE=1V
-
6
-
μs
①
VISEN=1V
-
0.2
-
μs
①
0.65
0.70
0.95
V
①
VISEN=SWEEP, VSINE=1.4V
TTSD
-
150
-
o
TTSDR
-
130
-
o
①
THYS
-
20
-
o
C
①
C
C
①
PWM Dimmer Delay Time1
(*12)
tPWMDIM1
VEN/DIM=2.2V to GND
-
0.3
4.0
μs
②
PWM Dimmer Delay Time2
(*13)
tPWMDIM2
VEN/DIM=GND to 2.2V
100
140
200
μs
②
2.2
-
15.0
V
①
GND
-
0.4
V
①
-
-
32
μA
①
EN/DIM “H” Voltage
VEN/DIMH
EN/DIM “L” Voltage
VEN/DIML
EN/DIM Bias Current
IEN/DIMH
VEN/DIM=15V
Unless otherwise stated, GND standard, VDD=13V, VEN/DIM=VDD, VISEN=GND, VSINE=5.5V
(*1)
ISEN pin voltage measured at start of GATE pin switching.
(*2)
Indicates VSINE pin voltage at which OFF TIME 6μs switching becomes possible.
(*3)
VDD pin voltage measured when GATE pin=L occurs.
(*4)
VDD pin voltage measured when GATE pin=H occurs.
(*5)
Indicates internal supply current when “H” level is input into EN/DIM pin and all circuits are activated. (When not switching.)
(*6)
Indicates internal supply current when “L” level is input into EN/DIM pin and the switching circuit is stopped.
(*7)
Indicates the current that discharges the capacitance between the VDD and GND pins at VOVP.
(*8)
Please refer to P.7 “CIRCUIT④”.
(*9)
May not be fixed at 6μs when UVLO is detected or during DIM signal control.
(*10)
When the current limit voltage VLIM is exceeded, off time is extended to about 140μs to prevent element damage.
For details, refer to the operation description.
(*11)
o
To protect the IC from thermal destruction, thermal shutdown activates when the chip temperature reaches 150 C and forcibly sets the GATE
o
pin voltage to “L”. When the chip temperature falls to 130 C, operation resumes.
(*12)
Time from attainment of EN/DIM “L” voltage until GATE pin=L.
(*13)
Time from attainment of EN/DIM “H” voltage until GATE pin=H.
5/19
XC9401Series
■ELECTRICAL CHARACTERISTICS (Continued)
Ta=25 oC
XC9401 Series, Type B
PARAMETER
SYMBOL
VDD Voltage Range
VDD
ISEN Voltage
VISEN
UVLO Detect Voltage
VUVLO
CONDITIONS
VISEN=SWEEP
(*1)
MIN.
TYP.
MAX.
UNITS
CIRCUIT
9
-
15
V
①
0.3259
0.3430
0.3602
V
①
VDD=SWEEP
(*2)
5.5
6.5
7.5
V
①
(*3)
6.5
7.5
8.5
V
①
UVLO Release Voltage
VUVLOR
VDD=SWEEP
UVLO Hysteresis Width
VUVLOH
VUVLOH=VUVLOR - VUVLO
-
1.1
-
V
①
IDD
VDD=VEN/DIM=15V
-
250
300
μA
①
Supply Current
(*4)
Stand-by Current
(*5)
VDD Overvoltage Protection Voltage
VDD Overvoltage Protection
Release Voltage
VDD Overvoltage Protection
Hysteresis Width
VDD Overvoltage Protection
Discharge Current
(*6)
ISTB
VDD=15V, VEN/DIM=GND
-
225
280
μA
①
VOVP
VDD=SWEEP
(*2)
17
18
19
V
①
VOVPR
VDD=SWEEP
(*3)
15.5
16.5
17.5
V
①
VOVPH
VOVPH=VOVP - VOVPR
-
1.5
-
V
①
VDD=19V
-
30
-
mA
①
2
5
8
Ω
③
-
5
-
Ω
④
VISEN=0.45V
-
6
-
μs
①
VISEN=1V
-
0.2
-
μs
①
0.65
0.70
0.95
V
①
IOVP
GATE “H” ON Resistance
RGATEH
GATE “L” ON Resistance
RGATEL
OFF Time
(*8)
tOFF
Minimum ON Time
Current Limit Voltage
tONMIN
(*9)
Thermal Shutdown Temperature
VLIM
(*10)
Thermal Shutdown Release
Temperature
Thermal Shutdown Hysteresis Width
IGATE = -10mA
RGATEH = (VDD - VGATE) / IGATE
VISEN=1V, R1=300Ω
RGATEL= VGATE / IR1
(*7)
VISEN=SWEEP
TTSD
-
150
-
o
TTSDR
-
130
-
o
①
THYS
-
20
-
o
C
①
C
C
①
PWM Dimmer Delay Time1
(*11)
tPWMDIM1
VEN/DIM=2.2V to GND
-
0.3
4.0
μs
①
PWM Dimmer Delay Time2
(*12)
tPWMDIM2
VEN/DIM=GND to 2.2V
100
140
200
μs
②
EN/DIM “H” Voltage
VEN/DIMH
2.2
-
15.0
V
②
EN/DIM “L” Voltage
VEN/DIML
GND
-
0.4
V
①
EN/DIM Bias Current
IEN/DIMH
-
-
32
μA
①
VEN/DIM=15V
Unless otherwise stated, GND standard, VDD=13V, VEN/DIM=VDD, VISEN=GND, VSINE=5.5V
(*1)
ISEN pin voltage measured at start of GATE pin switching.
(*2)
Indicates VSINE pin voltage at which OFF TIME 6μs switching becomes possible.
(*3)
VDD pin voltage measured when GATE pin=L occurs.
(*4)
VDD pin voltage measured when GATE pin=H occurs.
(*5)
Indicates internal supply current when “H” level is input into EN/DIM pin and all circuits are activated. (When not switching.)
(*6)
Indicates internal supply current when “L” level is input into EN/DIM pin and the switching circuit is stopped.
(*7)
Indicates the current that discharges the capacitance between the VDD and GND pins at VOVP.
(*8)
Please refer to P.8 “CIRCUIT④”.
(*9)
May not be fixed at 6μs when UVLO is detected or during DIM signal control.
(*10)
When the current limit voltage VLIM is exceeded, off time is extended to about 140μs to prevent element damage.
For details, refer to the operation description.
(*11)
o
To protect the IC from thermal destruction, thermal shutdown activates when the chip temperature reaches 150 C and forcibly sets the
o
GATE pin voltage to “L”. When the chip temperature falls to 130 C, operation resumes.
(*12)
Time from attainment of EN/DIM “L” voltage until GATE pin=L.
(*13)
Time from attainment of EN/DIM “H” voltage until GATE pin=H.
6/19
XC9401
Series
■TYPICAL APPLICATION CIRCUIT (Type A)
1) CIRCUIT①
A
ISEN
VSINE
VDD
GND
GATE
EN/DIM
A
SW1
VDD
CVDD
VISEN
V
V
Waveform measure point
VCEDIM
V
V
VSINE
V
2) CIRCUIT②
A
ISEN
VSINE
VDD
GND
GATE
VDD
CVDD
VISEN
V
V
EN/DIM
PWM
signal
Waveform measure point
VSINE
V
V
3) CIRCUIT③
ISEN
VSINE
VDD
GND
GATE
VDD
IGATE
CVDD
VISEN
V
V
EN/DIM
↓
VSINE
V
V
4) CIRCUIT④
A
IR1
R1
ISEN
VSINE
VDD
GND
GATE
VDD
CVDD
VISEN
V
V
EN/DIM
Waveform measure point
V
VSINE
V
7/19
XC9401Series
■TYPICAL APPLICATION CIRCUIT (Continued) (Type B)
1) CIRCUIT①
A
ISEN
NF
VDD
GND
GATE
EN/DIM
A
SW1
VDD
CVDD
VISEN
V
V
Waveform measure point
VCEDIM
V
V
2) CIRCUIT②
A
ISEN
NF
VDD
GND
GATE
VDD
CVDD
VISEN
V
V
EN/DIM
PWM
signal
Waveform measure point
V
3) CIRCUIT③
ISEN
NF
VDD
GND
GATE
VDD
IGATE
CVDD
VISEN
V
V
EN/DIM
↓
V
4) CIRCUIT④
A
IR1
R1
ISEN
NF
VDD
GND
GATE
VDD
8/19
CVDD
VISEN
V
V
EN/DIM
Waveform measure point
V
XC9401
Series
■OPERATIONAL EXPLANATION
The internal circuitry of the XC9401 series consists of a reference voltage source (VREF), PWM comparator (PWMCMP), buffer
drive circuit (Buffer Drive), over-current protection circuit (Over Current Limit), under-voltage lockout circuit (UVLO), VDD over
voltage protection circuit (OVP), thermal shutdown circuit (Thermal Shutdown), and other circuits. (Refer to the block diagram.)
The control method is fixed off-time control.
With type A, the PWM comparator compares the voltage at the ISEN pin to that at the VSINE pin x 0.2783 (TYP.) The output of
the PWM comparator is connected to the buffer drive circuit and an external Power MOS FET drive signal is output from the
GATE pin. When the ISEN pin voltage is 0.2783 times (TYP.) higher than the VSINE pin voltage, the GATE pin switches to low.
After a fixed off-time elapses, the GATE pin switches to high. This operation is repeated continuously.
With type B, the PWM comparator compares the 0.343V (TYP.), which is 0.2783 times (TYP.) the reference voltage, to the ISEN
pin voltage.
Fig.1. Reference Circuit
9/19
XC9401Series
■OPERATIONAL EXPLANATION (Continued)
Details of each circuit block are as follows.
<Reference voltage supply (VREF)>
Reference voltage that enables stable operation of the internal functions of the IC.
<PWM comparator (PWMCMP)>
With type A, the PWM comparator compares the voltage at the ISEN pin to that at the VSINE pin x 0.2783 (TYP.) When the ISEN
pin voltage is higher than VSINE x 0.2783, the GATE pin switches to low.
With type B, the PWM comparator compares the 0.343V (TYP.), which is 0.2783 times (TYP.) the reference voltage, to the ISEN
pin voltage.
<Buffer drive circuit (Buffer Drive)>
This outputs an H or L signal from the GATE pin that drives the external Power MOS FET. The H level is the VDD pin voltage,
and the L level is the GND pin voltage. The signal that is output is determined by the PWM comparator, as well as by the below
described UVLO circuit, VDD over-voltage protection circuit, over-current protection circuit, thermal shutdown, and EN/DIM pin
voltage.
<Enable / PWM Dimming (EN/DIM)>
When the power is turned on, it takes about 200μs (MAX.) for the GATE pin to initially become “H” after the EN/DIM pin
voltage is changed from “L” to “H”.
Inputting “L” to the EN/DIM pin voltage forcibly puts the GATE pin voltage in the “L” state. The stopped state when the EN/DIM
pin voltage is “L” is not shutdown; rather, it is a Stand-by state wherein the switching pulse output is stopped by logic circuit and
the internal circuitry continues to operate. For this reason, a high-speed response is possible even when a pulse signal (500 Hz
to 1 kHz) is input to the EN/DIM pin, and by adjusting the duty width of the PWM signal input into the EN/DIM pin, the LED can
be dimmed.
< Minimum on time controller circuit >
Spike noise and ripple noise occur in the XC9401 series due to switching. To prevent malfunction of the internal circuit by such
noises, a minimum on time is established. The GATE pin voltage is forcibly kept at “H” until the minimum on time elapses. (Refer
to Fig. 2.)
During the minimum on time, if the below described UVLO, OVP or thermal shutdown is detected, or if the Stand-by state is set
from the EN/DIM pin, the GATE pin voltage is immediately changed to “L”.
<Off Time Controller>
This circuit controls the fixed off time. The off time is normally fixed at 6μs (TYP.), and the GATE pin voltage is kept at “L”
during this time. After the fixed off time, the GATE pin voltage becomes “H”. (Refer to Fig. 2.)
If the EN/DIM pin voltage is changed from “L” to “H” during the above PWM dimming, the off time is 140μs (TYP.) during the
over-current protection and ULVO release described below.
Fig.2. Off Time Controller, Min. On Time Controller
10/19
XC9401
Series
■OPERATIONAL EXPLANATION (Continued)
<Over Current Limit>
When the switching current of the external power MOSFET is in the over-current state and the ISEN pin voltage reaches 0.7V
(TYP.), L level voltage is output to the GATE pin and the external power MOSFET is turned off. In addition, the off time is
temporarily extended from the normal 6.0μs (TYP.) to 140μs (TYP.). When the ISEN pin voltage falls to 0.7V (TYP.) or less
after the extended off time, normal operation resumes.
When LED+ and LED- short circuit in the reference circuit shown in Fig.1, the current slope of the coil (L2) becomes smaller
during the off time than the slope during normal switching, which prevents sufficient discharge during the 6.0μs (TYP.) off time.
During the minimum on time, the external power MOSFET Q1 always turns on, and thus the coil current gradually increases.
The ISEN pin voltage becomes higher at the same time as the coil current increases, and when the ISEN pin voltage reaches
0.7V (TYP.), the off time is extended to 140μs (TYP.). (Refer to Fig.3)
Fig.3. Over Current Limit (Fig.1. Operation when LED+ and LED- short-circuit in the reference circuit)
<Under-voltage lockout circuit>
When the VDD pin voltage falls to the UVLO Detect Voltage (VUVLO) or lower, the GATE pin voltage is forcibly set to “L” to
prevent incorrect pulse output. When the VDD pin voltage rises to the UVLO Release Voltage (VUVLOR) or higher, switching
resumes.
A UVLO stop simply stops pulse output; it is not a shutdown state and the internal circuitry continues to operate.
<VDD over-voltage protection circuit>
When the VDD pin voltage rises to the VDD Overvoltage Protection Voltage (VOVP) or higher, the charge of the capacitance
between the VDD pin and GND pin is discharged by the resistance and transistor connected between the VDD pin and GND pin
in order to prevent withstand voltage destruction in the internal circuitry. The GATE pin voltage at this time is forcibly set to “L”.
When the VDD pin voltage falls to the VDD Overvoltage Protection Release Voltage (VOVPR) or lower, switching is resumed.
<Thermal shutdown>
To protect the IC from thermal destruction, thermal shutdown activates when the chip temperature reaches 150 oC (TYP.) and
forcibly sets the GATE pin voltage to “L”. When the chip temperature falls to 130 oC (TYP.), switching is resumed.
11/19
XC9401Series
■NOTE ON USE
1. For the phenomenon of temporal and transitional voltage decrease or voltage increase, the IC may be damaged or
deteriorated if IC is used beyond the absolute MAX. specifications.
2. In a switching controller such as the XC9401 series, and in a peripheral circuit controlled by a switching controller, spike
voltage and ripple voltage occur. These are greatly affected by the peripheral components (inductance value of the coil,
capacitors, peripheral component board layout). During design, test sufficiently using the actual equipment.
3. A delay time of 200μs (MAX.) after the UVLO release voltage, and after EN/DIM pin voltage “H”, has been established in the
IC. Keep these delay times in mind during sequence design.
4. The NF pin of the XC9401B605MR-G is connected to part of the internal circuitry, although not as a circuit function. When
using this IC, connect this pin to GND.
5. Make sure to use this IC within specified electric characteristics.
6. Please pay attention not to exceed absolute maximum ratings of this IC and external components.
7. To reduce VDD fluctuations as much as possible, connect a bypass capacitor (CVDD) over the shortest path between VDD and
GND. If there is too much distance between the IC and CVDD, operation may become unstable.
8. Please mount each external component as close to the IC as possible. Please also wire external components as close to the
IC as possible and use thick, short connecting traces to reduce the circuit impedance.
9. Sufficiently reinforce the wiring between VDD and GND. Noise that enters through VDD and GND during switching may cause
unstable IC operation.
10. Torex places an importance on improving our products and their reliability.
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their
systems.
12/19
XC9401
Series
■ TYPICAL PERFORMANCE CHARACTERISTICS
(1) Supply Current vs. VDD Voltage
(2) Supply Current vs. Ambient Temperature
XC9401
XC9401
VENDIM=VDD , VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
C VDD =10μF(TMK316BJ106KL-T)
VDD =15V, VENDIM=VDD , VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
280
250
Supply Current [μA]
Supply Current [μA]
300
200
150
Ta=-40℃
Ta=25℃
100
Ta=85℃
50
0
260
240
220
200
1
3
5
7
9
11
13
-50
15
-25
V DD Voltage [V]
0
25
(3) Stand-by Current vs. VDD Voltage
100
XC9401
VENDIM=GND, VISEN =GND
VSINE=GND(Type A) or VNF=GND(Type B)
C VDD =10μF(TMK316BJ106KL-T)
VDD =15V, VENDIM=GND, VISEN =GND
VSINE=0V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
260
300
250
Stand-by Current [μA]
Stand-by Current [μA]
75
(4) Stand-by Current vs. Ambient Temperature
XC9401
200
150
Ta=-40℃
100
Ta=25℃
240
220
200
Ta=85℃
50
0
180
1
3
5
7
9
11
13
-50
15
-25
V DD Voltage [V]
0
25
50
75
100
Ambient Temperature : Ta [℃]
(5) EN/DIM Bias Current vs. EN/DIM Voltage
(6) EN/DIM Bias Current vs. Ambient Temperature
XC9401
XC9401
VDD =13V, ISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
C VDD =10μF(TMK316BJ106KL-T)
VDD =13V, VEN/DIM=13V, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
16
20
EN/DIM Bias Current [μA]
EN/DIM Bias Current [μA]
50
Ambient Temperature : Ta [℃]
Ta=-40℃
Ta=25℃
Ta=85℃
16
12
8
4
0
14
12
10
8
6
1
3
5
7
9
11
13
EN/DIM Voltage [V]
-50
15
-25
0
25
50
75
100
Ambient Temperature : Ta [℃]
(7) ISEN Voltage vs. Ambient Temperature
XC9401A605MR
XC9401B605MR
VDD =13V, VENDIM=VDD
VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
0.2950
0.3600
0.2850
0.3550
ISEN Voltage [V]
ISEN Voltage [V]
VDD =13V, VENDIM=VDD
VSINE=1.0V(Type A)
C VDD =10μF(TMK316BJ106KL-T)
0.2750
0.2650
0.2550
0.3500
0.3450
0.3400
0.2450
0.3350
-50
-25
0
25
50
75
Ambient Temperature : Ta [℃]
100
-50
-25
0
25
50
75
100
Ambient Temperature : Ta [℃]
13/19
XC9401Series
■ TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(9) UVLO Release Voltage vs. Ambient Temperature
XC9401
XC9401
VENDIM=VDD, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
VENDIM=VDD, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
C VDD =10μF(TMK316BJ106KL-T)
7.5
UVLO Release Voltage [V]
UVLO Detect Voltage [V]
(8) UVLO Detect Voltage vs. Ambient Temperature
7.1
6.7
6.3
5.9
5.5
-50
-25
0
25
50
75
8.5
8.1
7.7
7.3
6.9
6.5
-50
100
Ambient Temperature : Ta [℃]
-25
0
25
50
75
100
125
Ambient Temperature : Ta [℃]
(10) UVLO Hysteresis Width vs. Ambient Temperature
XC9401
UVLO Hysteresis Width [V]
VENDIM=VDD, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
1.30
1.25
1.20
1.15
1.10
1.05
-50
-25
0
25
50
75
100
Ambient Temperature : Ta [℃]
(11) VDD Overvoltage Protection Voltage
(12) VDD Overvoltage Protection Release Voltage
vs. Ambient Temperature
vs. Ambient Temperature
XC9401
VENDIM=VDD, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
XC9401
VENDIM=VDD, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
C VDD =10μF(TMK316BJ106KL-T)
16.8
V DD Overvoltage Protection
Release Voltage [V]
V DD Overvoltage
Protection Voltage [V]
18.2
18.0
17.8
17.6
17.4
16.6
16.4
16.2
16.0
17.2
-50
-25
0
25
50
75
100
15.8
Ambient Temperature : Ta [℃]
-50
-25
0
25
50
75
100
Ambient Temperature : Ta [℃]
(13) VDD Overvoltage Protection Hysteresis Width
(14) VDD Overvoltage Protection Discharge Current
vs. Ambient Temperature
XC9401
XC9401
VENDIM=VDD, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
VDD =19V, VENDIM=VDD, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
C VDD =10μF(TMK316BJ106KL-T)
45
V DD Overvoltage Protection
Discharge Current [mA]
V DD Overvoltage Protection
Hysteresis Width [V]
1.55
1.50
1.45
1.40
1.35
1.30
35
30
25
20
-50
-25
0
25
50
75
Ambient Temperature : Ta [℃]
14/19
40
100
-50
-25
0
25
50
Ambient Temperature : Ta [℃]
75
100
XC9401
Series
■ TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(15) GATE “H” ON Resistance vs. Ambient Temperature
(16) GATE “L” ON Resistance vs. Ambient Temperature
XC9401
7.0
6.0
5.0
4.0
3.0
GATE “L” ON Resistance [Ω]
GATE “H” ON Resistance [Ω]
XC9401
VDD =13V, VENDIM=VDD , IGATE=-10mA, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
2.0
VDD =13V, VENDIM=VDD , R1=300Ω, VISEN =1.0V
VSINE=5.5V(Type A) or VNF=GND(Type B)
C VDD =10μF(TMK316BJ106KL-T)
7.0
6.0
5.0
4.0
3.0
2.0
-50
-25
0
25
50
75
100
-50
-25
Ambient Temperature : Ta [℃]
(17) OFF Time
0
25
vs. Ambient Temperature
(18) Minimum ON Time
75
100
vs. Ambient Temperature
XC9401
XC9401
VENDIM=VDD, VISEN =0.4V(Type A) or 0.45V(Type B)
VSINE=1.0V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
VENDIM=VDD, VISEN =1.0V
VSINE=5.5V(Type A) or VNF=GND(Type B)
C VDD =10μF(TMK316BJ106KL-T)
0.22
Minimum ON Time [μs]
7.0
OFF Time [μs]
50
Ambient Temperature : Ta [℃]
6.5
6.0
5.5
5.0
0.20
0.18
0.16
0.14
-50
-25
0
25
50
75
100
-50
Ambient Temperature : Ta [℃]
-25
0
25
50
75
100
Ambient Temperature : Ta [℃]
(19) Current Limit Voltage vs. Ambient Temperature
XC9401
VENDIM=VDD, VISEN =GND
VSINE=1.4V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
Current Limit Voltage [V]
0.95
0.90
0.85
0.80
0.75
0.70
0.65
-50
-25
0
25
50
75
100
Ambient Temperature : Ta [℃]
(20) PWM Dimmer Delay Time1 vs. Ambient Temperature
(21) PWM Dimmer Delay Time2 vs. Ambient Temperature
XC9401
0.40
PWM Dimmer Delay Time2 [μs]
PWM Dimmer Delay Time1 [μs]
XC9401
VDD =13V, VEN/DIM=2.2V to GND , VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
0.35
0.30
0.25
0.20
VDD =13V, VEN/DIM=GND to 2.2V , VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
C VDD =10μF(TMK316BJ106KL-T)
180
160
140
120
100
-50
-25
0
25
50
75
Ambient Temperature : Ta [℃]
100
-50
-25
0
25
50
75
100
Ambient Temperature : Ta [℃]
15/19
XC9401Series
■ TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(22) EN/DIM “H” Voltage vs. Ambient Temperature
XC9401
XC9401
VDD =13V, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
VDD =13V, VISEN =GND
VSINE=5.5V(Type A) or VNF=GND(Type B)
CVDD =10μF(TMK316BJ106KL-T)
1.60
1.50
1.40
1.30
0.90
0.80
0.70
0.60
1.20
0.50
-50
16/19
1.00
EN/DIM “L” Voltage [V]
EN/DIM “H” Voltage [V]
1.70
(23) EN/DIM “L” Voltage vs. Ambient Temperature
-25
0
25
50
75
Ambient Temperature : Ta [℃]
100
-50
-25
0
25
50
75
Ambient Temperature : Ta [℃]
100
XC9401
Series
■PACKAGING INFORMATION
●SOT-26 (unit: mm)
2.9±0.2
+0.1
0.4 -0.05
+0.1
0.4 -0.05
6
5
4
0～0.1
1234
2
1
(0.95)
3
(0.95)
+0.1
0.15 -0.05
17/19
XC9401Series
■MARKING RULE
●SOT-26
6
5
①
② ③
1
2
4
④
⑤
3
① represents product series
MARK
PRODUCT SERIES
3
XC9401******-G
②③ represents product type
MARK
②
③
PRODUCT SERIES
A
A
XC9401A605**-G
B
A
XC9401B605**-G
④⑤ represents production lot number
01～09, 0A～0Z, 11～9Z, A1～A9, AA～AZ, B1～ZZ in order.
(G, I, J, O, Q, W excluded)
*No character inversion used.
18/19
XC9401
Series
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
19/19