COMSET TIC226A_12

SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
•
•
•
•
•
•
•
8 A RMS
70 A Peak
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 50 mA (Quadrants 1-3)
High-temperature, High-current and high-voltage applications
Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the onstate by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Ratings
A
VDRM
IT(RMS)
ITSM
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at
(or below) 70°C case temperature
(see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak on-state surge current
half-sine-wave (see Note4)
Peak gate current
Peak gate power dissipation at
(or below) 85°C case temperature
(pulse width ≤200 µs)
Average gate power dissipation at
(or below) 85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
30/10/2012
B
C
D
E
Unit
M
S
N
100 200 300 400 500 600 700 800
V
8
A
70
A
8
A
±1
A
2.2
W
0.9
W
-40 to +110
-40 to +125
°C
°C
230
°C
COMSET SEMICONDUCTORS
1|4
SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
R∂JC
Junction to case thermal resistance
≤ 1.8
R∂JA
Junction to free air thermal resistance
≤ 62.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
IDRM
Ratings
Repetitive peak
off-state current
IGT
Gate trigger
current
VGT
Gate trigger
voltage
Holding current
IH
Latching current
IL
VTM
dv/dt
dv/dt©
Peak on-state
voltage
Critical rate of
rise of off-state
voltage
Critical rise of
communication
voltage
Test Condition(s)
VD = Rated VDRM, , IG = 0
TC = 110°C
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, IG = 0
initiating ITM = 100 mA
Min
Typ
Max
Unit
-
-
±2
mA
-
2
-12
-9
20
0.7
-0.8
-0.8
0.9
50
-50
-50
2
-2
-2
2
-
5
30
V
mA
Vsupply = -12 V†, IG = 0
initiating ITM = -100 mA
Vsupply = +12 V† (seeNote7)
Vsupply = -12 V† (seeNote7)
-
-9
-30
-
-
50
-50
mA
ITM = ± 12 A, IG = 50 mA (see Note6)
-
±1.6
±2.1
V
VDRM = Rated VDRM, IG = 0
TC = 110°C
-
±100
-
VDRM = Rated VDRM, ITRM = ± 12A
TC = 85°C
V/µs
±5
-
-
† All voltages are whit respect to Main Terminal 1.
30/10/2012
mA
COMSET SEMICONDUCTORS
2|4
SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main
Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C
derate linearly to 110°C case temperature at the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below)
the rated value of on-state current. Surge may be repeated after the device has returned
to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below)
the rated value of on-state current. Surge may be repeated after the device has returned
to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
6. This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %,
voltage-sensing
contacts, separate from the courrent-carrying contacts are located
within 3.2mm (1/8 inch) from de device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator
with the following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.
MECHANICAL DATA CASE TO-220
30/10/2012
COMSET SEMICONDUCTORS
3|4
SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
PINNING
Pin 1 :
Pin 2 :
Pin 3 :
kathode
Anode
Gate
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
30/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
4|4