SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 20 mA Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Symbol Value Ratings A VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL Repetitive peak off-state voltage (see Note1) Repetitive peak reverse voltage Continuous on-state current at (or below) 70°C case temperature (see note2) Average on-state current (180° conduction angle) at(or below) 70°C case temperature (see Note3) Surge on-state current (see Note4) Peak positive gate current (pulse width ≤300 µs) Peak power dissipation (pulse width ≤300 µs) Average gate power dissipation (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds 30/10/2012 B C D E Unit M S N 100 200 300 400 500 600 700 800 V 100 200 300 400 500 600 700 800 V 12 A 7.5 A 100 A 3 A 5 W 1 W -40 to +110 -40 to +125 °C °C 230 °C COMSET SEMICONDUCTORS 1|4 SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S THERMAL CHARACTERISTICS Symbol tgt tq R∂JC R∂JA Ratings Value Gate-controlled VAA = 30 V, RL = 6 Ω Turn-on time RGK(eff) = 100 Ω, Vin = 20 V Circuit-communicated VAA = 30 V, RL = 6 Ω Turn-off time IRM ≈ 10 A Junction to case thermal resistance Junction to free air thermal resistance Unit 0.8 µs 11 ≤ 2.4 ≤ 62.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IDRM Repetitive peak off-state current IRRM Repetitive peak reverse current IGT Gate trigger current VGT Gate trigger voltage Holding current IH VTM dv/dt Peak on-state voltage Critical rate of rise of offstate voltage 30/10/2012 VD = Rated VDRM RGK = 1 kΩ TC = 110°C VR = Rated VRRM, IG = 0 TC = 110°C VAA = 6 V, RL = 100 Ω tp(g) ≥ 20µs VAA = 6 V, RL = 100 Ω RGK = 1 kΩ, tp(g) ≥ 20µs TC = -40°C VAA = 6 V, RL = 100 Ω RGK = 1 kΩ, tp(g) ≥ 20µs VAA = 6 V, RL = 100 Ω RGK = 1 kΩ, tp(g) ≥ 20µs TC = 110°C VAA = 6 V, RGK = 1 kΩ initiating IT = 100 mA VAA = 6 V, RGK = 1 kΩ initiating IT = 100 mA TC = -40°C ITM = 8A (see Note6) VD = Rated VD TC = 110°C COMSET SEMICONDUCTORS Min Typ Max Unit - - 2 mA - - 2 mA - 5 20 mA - - 2.5 - 0.8 1.5 0.2 - - - - 40 - - 70 - - 1.4 V - 100 - V/µs V mA 2|4 SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S Notes: 1. These values apply when the gate-cathode resistance RGK = 1kΩ 2. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate linearly to zero at 110°C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. 6. This parameters must be measured using pulse techniques, tW = 300µs, duty cycle ≤ 2 %, voltage-sensing contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body. MECHANICAL DATA CASE TO-220 30/10/2012 COMSET SEMICONDUCTORS 3|4 SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S PINNING Pin 1 : Pin 2 : Pin 3 : kathode Anode Gate Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 30/10/2012 [email protected] COMSET SEMICONDUCTORS 4|4