COMSET TIC246C

SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
•
•
•
•
•
•
•
•
High current triacs
16 A RMS
70 A Peak
Glass Passivated Wafer
200 V to 800 V Off-State Voltage
Max IGT of 50 mA (Quadrants 1-3)
125 A peak current
Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to
the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
Value
Ratings
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at
(or below) 70°C case temperature
(see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from
case for 10 seconds
B
C
D
200
300
400
E
Unit
M
S
N
500 600 700 800
V
16
A
125
A
±1
-40 to +110
-40 to +125
A
°C
°C
230
°C
THERMAL CHARACTERISTICS
Symbol
R∂JC
R∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
30/10/2012
COMSET SEMICONDUCTORS
Value
Unit
≤ 1.9
≤ 62.5
°C/W
1|3
SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Repetitive peak VD = Rated VDRM, , IG = 0
off-state current TC = 110°C
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Gate trigger
current
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs
Gate trigger
voltage
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs
Vsupply = +12 V†, IG = 0
initiating
ITM = 100 mA
Holding current
Vsupply = -12 V†, IG = 0
initiating ITM = -100 mA
Vsupply = +12 V† (seeNote5)
Latching
current
Vsupply = -12 V† (seeNote5)
Peak on-state
ITM = ± 22.5 A, IG = 50 mA (see Note4)
voltage
Critical rate of
VDRM = Rated VDRM, IG = 0
rise of off-state
TC = 110°C
voltage
Critical rate of
VDRM = Rated VDRM, IGT = 50 mA
rise of off-state
diG/dt = 50mA/µs, TC = 110°C
current
Critical rise of
VDRM = Rated VDRM, IT = 1.4 IT(RMS)
communication
di/dt = 0.5 IT(RMS) /ms, TC = 80°C
voltage
IDRM
IGT
VGT
IH
IL
VTM
dv/dt
di/dt
dv/dt©
Min
Typ
Max
Unit
-
-
±2
mA
-
12
-19
-16
34
0.8
-0.8
-0.8
0.9
50
-50
-50
2
-2
-2
2
-
22
40
mA
V
mA
-
-22
-40
-
-
80
-80
mA
-
±1.4
±1.7
V
-
±400
-
V/µs
-
±100
-
A/µs
±1.2
±9
-
V/µs
† All voltages are whit respect to Main Terminal 1.
Notes:
1.
2.
3.
4.
5.
30/10/2012
These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to
110°C case temperature at the rate of 400 mA/°C.
This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
This parameters must be measured using pulse techniques, tW = ≤1ms, duty cycle ≤ 2 %, voltagesensing
contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch)
from de device body.
The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the
following characteristics : RG = 100Ω, tp(g) = 20 µs, tr = ≤ 15ns, f = 1 kHz.
COMSET SEMICONDUCTORS
2|3
SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
Main Terminal 1
Main Terminal 2
Gate
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
30/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3|3