CYSTEKEC MTP1013S3

Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 1/ 8
CYStech Electronics Corp.
-20V P-CHANNEL Enhancement Mode MOSFET
MTP1013S3
BVDSS
ID
[email protected]=-4.5V, ID=-430mA
[email protected]=-4V, ID=-300mA
[email protected]=-2.5V, ID=-300mA
[email protected]=-1.8V, ID=-150mA
-20V
-540mA
0.64Ω(typ)
0.68Ω(typ)
1.1Ω(typ)
1.9Ω(typ)
Features
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th)<1.2V.
• Compact industrial standard SOT-323 surface mount package.
• Pb-free package.
Equivalent Circuit
MTP1013S3
Outline
SOT-323
D
G:Gate
S:Source
D:Drain
G
S
Ordering Information
Device
MTP1013S3-0-T1-G
MTP1013S3
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 2/ 8
Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=-4.5V
Pulsed Drain Current (Note 1)
Maximum Power Dissipation @ TA=25℃ (Note 2)
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Rth,ja
Tj, Tstg
Limits
-20
±10
-0.54
-1.5
350
357
-55~+150
Unit
V
A
mW
°C/W
°C
Note : 1. Pulse width≤ 10μs, duty cycle≤2%.
2. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*IS
*ISM
*VSD
Min.
Typ.
Max.
Unit
-20
-0.5
-
-0.8
0.5
0.64
0.68
1.1
1.9
-1.2
±10
-1
-10
0.9
0.9
1.4
2.7
V
V
S
-
59
21
15
5
6
42
14
1.2
0.38
0.23
-
-
-0.77
-0.54
-1.5
-1.2
μA
Ω
Test Conditions
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VDS=-10V, ID=-200mA
VGS=±10V, VDS=0
VDS=-20V, VGS=0
VDS=-20V, VGS=0, Tj=55°C
VGS=-4.5V, ID=-430mA
VGS=-4V, ID=-300mA
VGS=-2.5V, ID=-300mA
VGS=-1.8V, ID=-150mA
pF
VDS=-10V, VGS=0, f=1MHz
ns
VDS=-6V, ID=-500mA, VGS=-4.5V,
RG=50Ω
nC
VDS=-5V, ID=-250mA, VGS=-4.5V
A
V
VGS=0V, IS=-100mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTP1013S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 3/ 8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-VGS=5V, 4.5V,4V
1.6
-VGS=3.5V
1.2
-VGS=3V
-VGS=2.5V
0.8
-VGS=2V
0.4
ID=-250μA,
VGS=0V
-BVDSS, Normalized Drain-Source
Breakdown Voltage
-ID, Drain Current (A)
2
-VGS=1.8V
1.2
1
0.8
-VGS=1.5V
0.6
0
0
1
2
3
4
5
6
7
-VDS, Drain-Source Voltage(V)
8
9
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(Ω)
12
10
-VGS=1.2V
8
6
-VGS=2.5V
-VGS=1.5V
4
-VGS=1.8V
-VGS=4.5V
2
Tj=25°C
VGS=0V
1
0.8
0.6
Tj=150°C
0.4
0.2
0
0.001
0.01
0.1
-ID, Drain Current(A)
0
1
R DS(ON) , Normalized Static DrainSource On-State Resistance
3.6
3.2
2.8
2.4
2
ID=-500mA
ID=-300mA
ID=-10mA
1.2
0.8
1.5
2
4
1.6
0.3
0.6
0.9
1.2
-IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0.4
1.8
1.6
1.4
VGS=-4.5V, ID=-500mA
1.2
1
0.8
0.6
VGS=-2.5V, ID=-300mA
0.4
0
0
MTP1013S3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 4/ 8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
100
Capacitance---(pF)
Ciss
C oss
Crss
10
1.6
ID=-250μA
1.4
1.2
1
0.8
0.6
0.4
1
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
0
60 80 100 120 140 160
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
Gate Charge Characteristics
20
5
-VGS, Gate-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
RθJA=357°C/W
16
Power (W)
20 40
12
8
4
VDS=-15V
4
VDS=-10V
3
VDS=-5V
2
1
ID=-250mA
0
0.001
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
0.4
0.6
0.8
1
1.2
Qg, Total Gate Charge(nC)
1.4
1.6
Maximum Drain Current vs JunctionTemperature
10
0.6
100μs
1
1ms
10ms
0.1
100m
TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=357°C/W
Single Pulse
0.01
DC
0.001
-ID, Maximum Drain Current(A)
-ID, Drain Current (A)
0.2
0.5
0.4
0.3
0.2
0.1
TA=25°C, VGS=-4.5V, RθJA=357°C/W
0
0.01
MTP1013S3
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 5/ 8
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.4
1200
-VDS=5V
0.35
PD, Power Dissipation(W)
-ID, Drain Current (mA)
1000
TJ= -40°C, 0°C, 25°C
800
600
400
0.3
0.25
0.2
0.15
0.1
150°C
200
0.05
0
0
0
0.5
1
1.5
2
2.5
-VGS, Gate-Source Voltage(V)
0
3
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=357 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTP1013S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 6/ 8
Reel Dimension
Carrier Tape Dimension
MTP1013S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 7/ 8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP1013S3
CYStek Product Specification
Spec. No. : C698S3
Issued Date : 2012.07.13
Revised Date : 2013.09.09
Page No. : 8/ 8
CYStech Electronics Corp.
SOT-323 Dimension
TE
TW
□□
Marking:
Date Code
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Style: Pin 1.Gate 2.Source 3.Drain
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP1013S3
CYStek Product Specification