ONSEMI SBAT54SLT1G

BAT54SLT1G,
SBAT54SLT1G
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features





Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
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30 VOLT
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
SOT−23
CASE 318
STYLE 11
1
ANODE
2
CATHODE
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA = 25C
Derate above 25C
PF
3
CATHODE/ANODE
225
1.8
mW
mW/C
MARKING DIAGRAM
Forward Current (DC)
IF
200 Max
mA
600
1.0
mA
A
Rating
Non−Repetitive Peak Forward Current
tp < 10 msec
Square pulse = 1 sec
IFSM
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IFRM
LD3M G
G
1
mA
300
Junction Temperature
TJ
−55 to 150
C
Storage Temperature Range
Tstg
−55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
LD3
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BAT54SLT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SBAT54SLT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 15
1
Publication Order Number:
BAT54SLT1/D
BAT54SLT1G, SBAT54SLT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Symbol
Characteristic
Reverse Breakdown Voltage
(IR = 10 A)
V(BR)R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mAdc)
VF
Forward Voltage
(IF = 1.0 mAdc)
VF
Forward Voltage
(IF = 10 mAdc)
VF
Forward Voltage
(IF = 30 mAdc)
VF
Forward Voltage
(IF = 100 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
Min
Typ
Max
30
−
−
−
7.6
10
−
0.5
2.0
−
0.22
0.24
−
0.29
0.32
−
0.35
0.40
−
0.38
0.5
−
0.46
0.8
−
−
5.0
Unit
V
pF
Adc
Vdc
Vdc
Vdc
Vdc
Vdc
ns
820 +10 V
2k
100 H
0.1 F
IF
tr
0.1 F
tp
T
IF
trr
10%
T
DUT
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
90%
VR
IR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAT54SLT1G, SBAT54SLT1G
100
IF, FORWARD CURRENT (mA)
1 25C
85C
10
1 50C
1.0
25C
0.1
0.0
−40C
−55C
0.2
0.3
0.4
0.1
0.5
VF, FORWARD VOLTAGE (VOLTS)
0.6
Figure 2. Forward Voltage
IR, REVERSE CURRENT (A)
1000
TA = 150C
100
TA = 125C
10
1.0
TA = 85C
0.1
0.01
0.001
TA = 25C
0
5
15
25
10
20
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 3. Leakage Current
CT, TOTAL CAPACITANCE (pF)
14
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
BAT54SLT1G, SBAT54SLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAT54SLT1/D