Transistors SMD Type Product specification FMMT619 SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 2 A Collector current Base current IB 0.5 A Power dissipation PC 625 mW Tj,Tstg -55 to +150 ℃ Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification FMMT619 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=100μA 50 V Collector-emitter breakdown voltage * VCEO IC=10mA 50 V Emitter-base breakdown voltage VEBO IE=100μA 5 V Collector cutoff current ICBO VCB=40V 100 nA Emitter cut-off current IEBO VEB=4V 100 nA Collector emitter cutoff current ICES VCES=40V 100 nA IC=0.1A,IB=10mA Collector-emitter saturation voltage * 10 20 mV VCE(sat) IC=1A,IB=10mA 125 200 mV IC=2A,IB=50mA 150 220 mV Base-Emitter Saturation Voltage * VBE(sat) IC=2A, IB=50mA* 0.87 1.0 V Base-Emitter Turn-On Voltage * VBE(on) IC=2A, VCE=2V* 0.80 1.0 V 20 pF DC current gain hFE Output capacitance Cob Transition frequecy fT IC=10mA, VCE=2V* 200 400 IC=200mA,VCE=2V 300 450 IC=1A, VCE=2V* 200 400 IC=2A, VCE=2V* 100 225 IC=6A, VCE=2V* 40 VCB=10V,f=1MHz 12 IC=50mA,VCE=10V,f=100MHz 165 MHz * Pulse test: tp ≤ 300 μs; d ≤ 0.02. ■ Marking Marking 619 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2