Transistors SMD Type Product specification FZT953 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 5 Amps continuous current , up to 15 Amps peak current. Very low saturation voltages. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 Excellent gain characteristics specified up to 10 Amps. 4 Ptot = 3 watts. 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -140 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -6 V Continuous collector current ICM -10 A Peak pulse current IC -5 A Power dissipation Ptot 3 W Tj,Tstg -55 to +150 Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification FZT953 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -140 -170 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -100 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -6 -8 Collector Cut-Off Current ICBO VCB=-100V VCB=-100V,Ta = 100 Emitter Cut-Off Current IEBO VEB=-6V -20 -90 -160 -300 V -50 -1 nA ìA -10 nA -50 -115 -220 -420 mV Collector-emitter saturation voltage * IC=-100mA, IB=-10mA IC=-1A, IB=-100mA VCE(sat) IC=-2A, IB=-200mA IC=-4A, IB=-400mA Base-emitter saturation voltage * VBE(sat) IC=-4A, IB=-400mA -1010 -1170 mV Base-emitter ON voltage * VBE(on) IC=-4A, VCE=-1V -925 mV Static Forward Current Transfer * Transitional frequency hFE fT IC=-10mA, VCE=-1V* 100 200 IC=-1A, VCE=-1V* 100 200 IC=-3A, VCE=-1V* 50 90 IC=-4A, VCE=-1V* 30 50 -1160 300 IC=-10A, VCE=-1V* 15 IC=-100mA, VCE=-10V, f=50MHz 125 MHz Output capacitance Cobo VCB=-10V, f=1MHz 65 pF Turn-on time t(on) IC=-2A, VCC=-10V 110 ns Turn-off time t(off) IB1=IB2=-200mA 460 ns * Pulse test: tp = 300 ìs; d 0.02. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2