Data Sheet No. PD60200 revB IR2304(S) & (PbF) HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation • • • • • • • • • to +600V. Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Under voltage lockout for both channels 3.3V, 5V, and 15V input logic input compatible Cross-conduction prevention logic Matched propagation delay for both channels Lower di/dt gate driver for better noise immunity Internal 100ns dead-time Output in phase with input Available in Lead-Free VOFFSET IO+/- (min) VOUT Delay Matching Internal deadtime ton/off (typ.) 600V max. 60 mA/130 mA 10 - 20V 50 ns 100 ns 220/220 ns Package Description The IR2304(S) are a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. 8 Lead SOIC 8-Lead PDIP 2106/2301/2108/2109/2302/2304 Feature Comparison Part 2106/2301 21064 2108 21084 2109/2302 21094 2304 Block Diagram Input logic Crossconduction prevention logic Dead-Time HIN/LIN no none HIN/LIN yes Programmable 0.54~5µs IN/SD yes Programmable 0.54~5 µs COM VSS/COM COM VSS/COM COM VSS/COM HIN/LIN yes Internal 100ns COM Internal 540ns Internal 540ns Ground Pins up to 600V Vcc HIN LIN VB LIN HIN VCC HO COM VS LO TO LOAD IR2304 www.irf.com 1 IR2304(S)&(PbF) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition VS High side offset voltage VB High side floating supply voltage Min. Max. VB - 25 VB + 0.3 -0.3 625 VS - 0.3 VB + 0.3 Units VHO High side floating output voltage HO VCC Low side and logic fixed supply voltage -0.3 25 VLO Low side output voltage LO -0.3 VCC + 0.3 VIN Com dVS/dt PD RthJA Logic input voltage (HIN, LIN) Logic ground Allowable offset voltage SLEW RATE Package power dissipation @ TA ≤ +25°C Thermal resistance, junction to ambient V -0.3 VCC + 0.3 VCC -25 VCC + 0.3 — 50 8-Lead SOIC — 0.625 8-Lead PDIP — 1.0 8-Lead SOIC — 200 8-Lead PDIP — 125 TJ Junction temperature — 150 TS Storage temperature -50 150 TL Lead temperature (soldering, 10 seconds) — 300 V/ns W °C/W °C Recommended Operating Conditions The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol Min. Max. VB High side floating supply voltage Definition VS + 10 VS + 20 VS High side floating supply offset voltage Note 1 600 VHO High side (HO) output voltage VS VB VLO Low side (LO) output voltage COM VCC VIN Logic input voltage (HIN, LIN) COM VCC VCC Low side supply voltage 10 20 -40 125 TA Ambient temperature Units V °C Note 1: Logic operational for VS of COM -5 to COM +600V. Logic state held for VS of COM -5V to COM -V BS. 2 www.irf.com IR2304(S)&(PbF) Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to COM and VS is applicable to HO and LO. Symbol Definition Min. Typ. Max. Units Test Conditions VCCUV+ VBSUV+ VCC and VBS supply undervoltage positive going threshold 8 8.9 9.8 VCCUVVBSUV- VCC and VBS supply undervoltage negative going threshold 7.4 8.2 9 VCCUVH VBSUVH VCC supply undervoltage lockout hysteresis 0.3 0.7 — ILK Offset supply leakage current — — 50 IQBS Quiescent VBS supply current 20 60 150 IQCC Quiescent VCC supply current 50 120 240 VIH Logic “1” input voltage 2.3 — — VIL Logic “0” input voltage — — 0.8 VOH High level output voltage, VBIAS - VO — — 2.8 VOL Low level output voltage, VO — — 1.2 IIN+ Logic “1” input bias current — 5 40 IIN- Logic “0” input bias current — 1.0 2.0 IO+ Output high short circuit pulse current 60 — — IO- Output low short circuit pulsed current 130 — — V VB = VS = 600V µA VIN = 0V or 5V VIN = 0V or 5V V IO = 20mA µA mA VIN = 5V VIN = 0V VO = 0V PW ≤ 10 µs Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, VS = COM, CL = 1000 pF and TA = 25°C unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-on propagation delay 120 toff Turn-off propagation delay 130 Turn-on rise time 60 Turn-off fall time 20 100 170 DT Dead time 80 100 190 MT Delay matching, HS & LS turn-on/off — — 50 tr tf www.irf.com 220 320 VS = 0V 220 330 VS = 0V or 600V 200 300 ns 3 IR2304(S)&(PbF) Functional Block Diagram VB 2304 UV DETECT HO R HV LEVEL SHIFTER HIN R PULSE FILTER S VS PULSE GENERATOR SHOOTTHROUGH PREVENTION VCC UV DETECT DELAY LIN Q LO COM Lead Definitions Symbol Description VCC Low side supply voltage COM Logic ground and low side driver return HIN Logic input for high side gate driver output LIN Logic input for low side gate driver output VB High side floating supply HO High side driver output VS High voltage floating supply return LO Low side driver output 4 www.irf.com IR2304(S)&(PbF) Lead Assignments 1 LIN VB 8 1 LIN VB 8 2 HIN HO 7 2 HIN HO 7 3 VCC VS 6 3 VCC VS 6 4 COM LO 5 4 COM LO 5 8-Lead PDIP 8-Lead SOIC HIN LIN HO Internal Deadtime LO Figure 1. Input/Output Functionality Diagram www.irf.com 5 IR2304(S)&(PbF) 50% 50% HIN LIN t on t off tr 90% 90% HO LO tf 10% 10% Figure 2. Switching Time Waveforms HIN LIN 50% 50% 90% 10% LO HO DT DT 90% 10% Figure 3. Internal Deadtime Timing 6 www.irf.com IR2304(S)&(PbF) Case outlines 01-6014 01-3003 01 (MS-001AB) 8-Lead PDIP D DIM B 5 A F OOT PRINT 8 7 6 5 6 H E 0.25 [.010] 1 2 3 A 4 6.46 [.255] MIN .0532 .0688 1.35 1.75 A1 .0040 e 3X 1.27 [.050] 8X 1.78 [.070] e1 MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC .025 BAS IC 0.635 BAS IC e1 6X MILLIMETERS MAX A 8X 0.72 [.028] INCHES MIN H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C y 0.10 [.004] 8X b 0.25 [.010] A1 8X L 8X c 7 C A B 4. OUTLINE CONFORMS T O JEDEC OUT LINE MS-012AA. NOT ES: 1. DIMENS IONING & TOLE RANCING PE R ASME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIME TE RS [INCHE S]. 4. OUT LINE CONFORMS T O JEDE C OUTLINE MS-012AA. 8 Lead SOIC www.irf.com 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O EXCE ED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O EXCE ED 0.25 [.010]. 7 DIMENSION IS T HE LENGT H OF LE AD F OR SOLDE RING T O A SUBSTRAT E. 01-6027 01-0021 11 (MS-012AA) 7 IR2304(S)&(PbF) ORDER INFORMATION Basic Part (Non-Lead Free) Lead-Free Part 8-Lead PDIP IR2304 8-Lead SOIC IR2304S 8-Lead PDIP IR2304 8-Lead SOIC IR2304S order IR2304 order IR2304S order IR2304PbF order IR2304SPbF This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web Site. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/10/04 8 www.irf.com