IRFH5250DPbF V DS 25 V RDS(on) max 1.4 m 0.6 V 27 ns (@V GS = 10V) V SD max (@I S = 5.0A) trr (typical) ID (@Tmb = 25°C) 100 h HEXFET® Power MOSFET PQFN 5X6 mm A Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (<1.4m) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg tested Low Profile (<0.9 mm) Lower Conduction Losses Lower Switching Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFH5250DTRPBF IRFH5250DTR2PBF PQFN 5mm x 6mm PQFN 5mm x 6mm Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 25 VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 40 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ Tmb = 25°C Continuous Drain Current, VGS @ 10V 32 100 ID @ Tmb = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM c PD @Tmb = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range PD @TA = 25°C Power Dissipation h h V A 100 400 3.6 g Units 156 0.029 -55 to + 150 W W/°C °C Notes through are on page 8 www.irf.com 1 January 21, 2013 IRFH5250DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Min. Typ. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance 25 ––– ––– ––– -8.0 1.0 Max. Units ––– ––– 1.4 Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– 1.35 ––– ––– 1.7 1.80 -11 ––– 2.2 2.35 ––– 500 Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance ––– ––– ––– 120 ––– ––– ––– ––– 5.0 100 -100 ––– Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– ––– ––– 83 39 11 6.1 ––– 59 ––– ––– Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– ––– 12 9.9 18.1 ––– ––– ––– Conditions V VGS = 0V, ID = 1.0mA mV/°C Reference to 25°C, ID = 10mA VGS = 10V, ID = 50A m VGS = 4.5V, ID = 50A VDS = VGS, ID = 150μA V e e mV/°C μA mA nA S nC nC Output Charge ––– 36 ––– nC Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 1.4 23 72 ––– ––– ––– Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance ––– ––– ––– ––– 23 24 6115 1730 ––– ––– ––– ––– Reverse Transfer Capacitance ––– 610 ––– ns pF VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 13V, ID = 50A VGS = 10V, VDS = 13V, ID = 50A VDS = 13V VGS = 4.5V ID = 50A VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 50A RG=1.8 VGS = 0V VDS = 13V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c Typ. ––– ––– d Max. 470 50 Units mJ A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD VSD trr Qrr ton Min. ––– Typ. ––– Max. Units 100 A c (Body Diode) Diode Forward Voltage Diode Forward Voltage ––– ––– 400 ––– ––– ––– ––– 0.6 1.0 Conditions MOSFET symbol V V showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 5.0A, VGS = 0V TJ = 25°C, IS = 50A, VGS = 0V S e e ––– 27 41 ns TJ = 25°C, IF = 50A, VDD = 13V ––– 51 77 nC di/dt = 335A/μs Time is dominated by parasitic Inductance Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time e Thermal Resistance Parameter RJC-mb Typ. Max. Junction-to-Mounting Base Junction-to-Case f 0.5 0.8 RJC (Top) ––– 15 RJA Junction-to-Ambient ––– 35 ––– 22 RJA (<10s) 2 January 21, 2013 g Junction-to-Ambient g Units °C/W www.irf.com IRFH5250DPbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 100 10 2.7V 1 BOTTOM 2.7V 10 60μs PULSE WIDTH 60μs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 1000 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C VDS = 15V 60μs PULSE WIDTH 1.0 ID = 50A VGS = 10V 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V Crss 100 12.0 VDS= 20V VDS= 13V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 20 40 60 80 100 120 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 January 21, 2013 IRFH5250DPbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C 100 T J = 25°C 10 100 1.0 100μsec 1msec 10msec 10 DC 1 VGS = 0V Tc = 25°C Tj = 150°C Single Pulse 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 VSD, Source-to-Drain Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 3.0 300 VGS(th) , Gate threshold Voltage (V) Limited By Package 250 ID, Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 200 150 100 50 2.5 2.0 ID = 150μA 1.5 ID = 250μA ID = 1.0mA 1.0 ID = 1.0A 0.5 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base 4 January 21, 2013 www.irf.com IRFH5250DPbF 2000 EAS , Single Pulse Avalanche Energy (mJ) RDS(on) , Drain-to -Source On Resistance (m) 4 ID = 50A ID 18A 24A BOTTOM 50A 1800 TOP 1600 3 1400 1200 T J = 125°C 2 1000 1 T J = 25°C 0 800 600 400 200 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth www.irf.com 5 January 21, 2013 IRFH5250DPbF D.U.T Driver Gate Drive + - - P.W. Period * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test D= VGS=10V Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - RG Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A I AS 0.01 tp Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit VGS VDS RD V DS 90% D.U.T. RG + -V DD 10% VGS V10V GS Pulse Width µs Duty Factor td(on) tr td(off) tf Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs L DUT 0 1K VCC Vgs(th) S Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 January 21, 2013 Qgd Qgodr Fig 18b. Gate Charge Waveform www.irf.com IRFH5250DPbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 January 21, 2013 IRFH5250DPbF PQFN 5x6 Outline "B" Tape and Reel Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.37mH, RG = 25, IAS = 50A. Pulse width 400μs; duty cycle 2%. Ris measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 January 21, 2013 www.irf.com