VOL617A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES • Low profile package A 1 4 C C 2 3 E • High collector emitter voltage, VCEO = 80 V • Isolation test voltage, 5000 VRMS • Isolation voltage VIORM = 1050 Vpeak • Low coupling capacitance • High common mode transient immunity 17295-6 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION APPLICATIONS The VOL617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin LSOP wide body package. • Telecom • Industrial controls • Battery powered equipment • Office machines It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. • Programmable controllers The coupling device is designed for signal transmission between two electrically separated circuits. AGENCY APPROVALS (All parts are certified under base model VOL617A) • UL1577, file no. E76222 • cUL CSA 22.2 bulletin 5A, double protection • DIN EN 60747-5-5 (VDE 0884-5), available with option 1 • BSI: EN 60065:2002, EN 60950-1:2006 • FIMKO EN60950-1 • CQC: GB8898-2011, GB4943.1-2011 ORDERING INFORMATION V O L 6 1 7 PART NUMBER A - # CTR BIN X 0 0 UL, cUL, BSI, FIMKO, CQC UL, cUL, BSI, FIMKO, CQC, VDE (option 1) 4 pin LSOP, mini-flat, long creepage Rev. 1.6, 30-Jan-13 T PACKAGE OPTION TAPE AND REEL LSOP-5 10.2 mm CTR (%) AGENCY CERTIFIED/PACKAGE 4 pin LSOP, mini-flat, long creepage 1 5 mA 40 to 80 63 to 125 100 to 200 160 to 320 VOL617A-1T VOL617A-2T VOL617A-3T VOL617A-4T 40 to 80 63 to 125 100 to 200 160 to 320 VOL617A-1X001T VOL617A-2X001T VOL617A-3X001T VOL617A-4X001T Document Number: 82424 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOL617A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Reverse voltage Power dissipation Forward current Junction temperature OUTPUT Collector emitter voltage Emitter collector voltage TEST CONDITION Collector current tp/T = 0.5, tp < 10 ms Power dissipation Junction temperature COUPLER Isolation test voltage between emitter and detector Total power dissipation Storage temperature range Ambient temperature range Soldering temperature (1) t = 1 min 10 s SYMBOL VALUE UNIT VR Pdiss IF Tj 6 100 60 125 V mW mA °C VCEO VECO IC IC Pdiss Tj 80 7 50 100 150 125 V V mA mA mW °C VISO Ptot Tstg Tamb Tsld 5000 250 - 55 to + 125 - 55 to + 110 260 VRMS mW °C °C °C Ptot - Total Power Dissipation (mW) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices. 300 Coupled device 250 200 Phototransistor 150 100 IR-diode 50 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Forward voltage Capacitance Reverse current OUTPUT Collector emitter leakage current Collector emitter capacitance COUPLER Collector emitter saturation voltage Coupling capacitance TEST CONDITION SYMBOL IF = 5 mA VR = 0 V, f = 1 MHz VR = 6 V MIN. TYP. MAX. UNIT VF CO IR 1.16 45 1.5 V pF μA VCE = 10 V, IF = 0 A VCE = 5 V, f = 1 MHz ICEO CCE 10 7 200 IC = 1.0 mA, IF = 5 mA VCEsat 0.25 0.4 f = 1 MHz CC 0.25 100 nA pF V pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.6, 30-Jan-13 Document Number: 82424 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOL617A www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IC/IF IF = 5 mA, VCE = 5 V PART SYMBOL MIN. MAX. UNIT VOL617A-1 CTR 40 TYP. 80 % VOL617A-2 CTR 63 125 % VOL617A-3 CTR 100 200 % VOL617A-4 CTR 160 320 % SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Turn on time Rise time Turn off time Fall time TEST CONDITION VCC = 5 V, IC = 2 mA, RL = 100 VCC = 5 V, IC = 2 mA, RL = 100 VCC = 5 V, IC = 2 mA, RL = 100 VCC = 5 V, IC = 2 mA, RL = 100 SYMBOL ton tr toff tf MIN. TYP. 6 3.5 5.5 5 MAX. VCC = 5 V Input UNIT μs μs μs μs Input pulse RL 10 % VOUT Output pulse 90 % tr tf t off t on isfh618a_10 isfh618a_12 Fig. 2 - Test Circuit Fig. 3 - Test Circuit and Waveforms SAFETY AND INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage - routine test PARAMETER 100 %, ttest = 1 s Vpd 2 kV Partial discharge test voltage - lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 4) VIOTM 8 kV Vpd 1.68 Insulation voltage Insulation resistance Safety rating - maximum input current Safety rating - maximum power dissipation Rated impulse voltage Safety rating - maximum ambient temperature Clearance distance Creepage distance Insulation distance (internal) VIORM TYP. MAX. UNIT kV 1050 Vpeak VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 VIO = 500 V, Tamb 150 °C (construction test only) RIO 109 Isi 130 mA PSO 265 mW VIOTM 8 kV Tsi 150 °C 8 mm 8 mm 0.4 mm Note • According to DIN EN 60747-5-5 (VDE 0884), § 7.4.3.8.2, (see figure 4). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Rev. 1.6, 30-Jan-13 Document Number: 82424 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOL617A www.vishay.com Vishay Semiconductors VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor PSO (mW) 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM 100 IR-diode Isi (mA) 50 0 0 0 25 50 75 100 125 t3 ttest t4 150 13930 Tsi - Safety Temperature (°C) tTr = 60 s t1 t2 t stres t Fig. 4 - Derating Diagram Fig. 5 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-5 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 IF = 0 mA Tamb = 110 °C Tamb = 75 °C Tamb = 25 °C Tamb = 0 °C Tamb = - 55 °C 10 ICE0 - Leakage Current (nA) IF - Forward Current (mA) 100 1 0.1 1000 VCE = 40 V 100 10 VCE = 24 V 1 0.1 VCE = 12 V 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 - 60 - 40 - 20 0 VF - Forward Voltage (V) 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 6 - Forward Current vs. Forward Voltage Fig. 8 - Collector Emitter Current vs. Ambient Temperature 30 55 IF = 35 mA 50 IC - Collector Current (mA) IC - Collector Current (mA) 20 45 IF = 30 mA 40 35 IF = 25 mA 30 IF = 20 mA 25 20 IF = 15 mA 15 10 IF = 10 mA IF = 1 mA 5 IF = 5 mA 1 2 3 4 5 6 7 8 9 10 VCE - Collector Emitter Voltage (non-sat) (V) Fig. 7 - Collector Current vs. Collector Emitter Voltage (non-saturated) Rev. 1.6, 30-Jan-13 IF = 25 mA 20 IF = 10 mA 15 10 IF = 5 mA IF = 1 mA 5 IF = 2 mA 0 0 0 25 0 0.1 0.2 0.3 0.4 VCE - Collector Emitter Voltage (sat) (V) Fig. 9 - Collector Current vs. Collector Emitter Voltage (saturated) Document Number: 82424 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOL617A Vishay Semiconductors 2.0 1.2 IF = 5 mA NCTR - Normalized CTR (sat) NCTR - Normalized CTR (non-saturated) www.vishay.com 1.0 0.8 0.6 0.4 0.2 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 20 40 60 1.6 Tamb = - 55 °C 1.4 1.2 1.0 0.8 0.6 Tamb = 25 °C 0.4 0.2 Tamb = 110 °C 0.0 0 - 60 - 40 - 20 0 Tamb = 0 °C 1.8 0.1 80 100 120 Tamb - Ambient Temperature (°C) Fig. 10 - Normalized Current Transfer Ratio (non-sat) vs. Ambient Temperature Phase Angle (deg) NCTR - Normalized CTR (sat) 1.0 0.8 0.6 0.4 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C VCE = 5 V RL = 100 Ω - 40 RL = 1000 Ω - 60 - 80 - 100 - 120 - 140 - 160 - 60 - 40 - 20 0 20 40 60 80 100 120 1 Tamb - Ambient Temperature (°C) 10 100 1000 f - Cut-off Frequency (kHz) Fig. 14 - fCTR vs. Phase Angle Fig. 11 - Normalized Current Transfer Ratio (sat) vs. Ambient Temperature 1000 2.5 Tamb = 0 °C VCC = 5 V f CTR (kHz) Tamb = - 55 °C 2.0 1.5 100 0 - 20 0 NCTR - Normalized CTR (NS) 10 Fig. 13 - Normalized Current Transfer Ratio (sat) vs. Forward Current 1.2 0.2 1 IF - Forward Current (mA) Tamb = 25 °C 1.0 100 10 Tamb = 110 °C 0.5 0.0 1 0.1 1 10 100 IF - Forward Current (mA) Fig. 12 - Normalized Current Transfer Ratio (non-sat) vs. Forward Current Rev. 1.6, 30-Jan-13 0.1 1 10 100 IC (mA) Fig. 15 - fCTR vs. Collector Current Document Number: 82424 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOL617A www.vishay.com Vishay Semiconductors ton, toff Switching Time (μs) 1000 VCE = 5 V, Ic = 2 mA toff (μs) 100 10 ton (μs) 1 0.1 0 5 10 15 20 RL - Load Resistance (kΩ) Fig. 16 - Switching Time vs. Load Resistance 1.0 VCEsat - Collector Emitter Saturation Voltage (V) 20 % used 0.8 CTR = 50 % used 0.6 0.4 0.2 10 % used 0 1 100 10 IC - Collector Current (mA) 95 11028 ton/toff - Turn-On/Turn-Off Time (µs) Fig. 17 - Collector Emitter Saturation Voltage vs. Collector Current 50 Saturated operation VS = 5 V RL = 1 kΩ 40 30 toff 20 10 ton 0 0 95 11031 5 10 15 20 IF - Forward Current (mA) Fig. 18 - Turn-On/Turn-Off Time vs. Forward Current Rev. 1.6, 30-Jan-13 Document Number: 82424 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VOL617A www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2.30 max. 4.10 max. 10.20 3.80 + 0.30 - 0.40 0.20 2.00 0.10 ± 0.10 + 0.10 - 0.05 7.50 ± 0.20 0.45 ± 0.1 0.70 + 0.30 - 0.40 2.54 nom. 4 3 2.54 Possible footprint 0.90 8.20 1 22533 10.80 technical drawings according to DIN specifications 2 Pin no. 1 identification PACKAGE MARKING (example of VOL617A-3X001T) 617A-3X1 V YWW 68 Notes • Only option 1 is reflected in the package marking with the characters “X1”. • Tape and reel suffix (T) is not part of the package marking. TAPE AND REEL DIMENSIONS in millimeters Ø 1.55 2.7 4 2 0.3 7.5 Tape slot in core 1.75 ESD sticker 10.6 16 330 (13") 5° 4.25 8 Ø 1.6 Regular, special or bar code label 17999 Fig. 19 - Reel Dimensions (3000 units per reel) Rev. 1.6, 30-Jan-13 2.3 Direction of pulling out technical drawings according to DIN specification 22662 Fig. 20 - Tape Dimensions Document Number: 82424 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000