XC2406A816UR-G ETR2704-002a 1.6GHz ON/OFF Function LNA ■GENERAL DESCRIPTION The XC2406A816UR-G is an ultra-low-noise amplifier (LNA) with low operating voltage, low noise figure (NF), low power consumption using CMOS process, The XC2406 is designed for GPS band frequency (1.6GHz). The IC's internal circuit can be placed in stand-by mode via the CE function, In the stand-by mode, consumption current is greatly reduced and there is no need to add external ON/OFF control function like LDO. External RBIAS can adjust power supply to any voltage of 1.71V~3.63V as self bias function. Standard power supply voltages are . 3.45V, 3.00V, 2.85V and 1.80V. ■FEATURES ■APPLICATIONS Noise Figure Low Power Consumption High Gain CE Function ：NF=0.96dB(TYP.) (@ 1.575GHz) ：11.88mW (TYP.) (VDD=1.80V, RBIAS=92Ω) ：S21=18dB(TYP.) (@ 1.575GHz) ：CE “H” Voltage 1.1V∼VDD (1.71V≦VDD≦3.15V) CE “L” Voltage 0V∼0.4V Operation Voltage Range ：1.71V∼3.63V Output ：CMOS Output, 50Ω Driver Built-in Operating Temperature Range ：- 40℃∼+ 85℃ Package ：USP-8A01 Environmentally Friendly ：EU RoHS Compliant, Pb Free ●GPS band RF signal amplified ■TYPICAL APPLICATION CIRCUIT RBIAS1 VSS1 VDD VSS2 3.9pF RF_OUT CE Power Gain / Noise Figure vs. Frequency CBIAS XC2406A816 POUT VDD =VCE=2.85V, Ta=25℃ 7.5nH VDD 5.0 25 VCE TOP VIEW VDD [V] (TYP.) RBIAS [Ω] 3.45 3.00 2.85 1.80 390 300 270 92 4.5 Power Gain : S21 (dB) 10nH RBIAS RBIAS2 RF_IN 4.0 20 3.5 3.0 15 2.5 10 2.0 1.5 5 1.0 0.5 0 0.0 1 * RBIAS should be used in ±1% tolerance and ±200ppm/℃ temperature stability. Noise Figure : NF (dB) 6.2nH PIN ■TYPICAL PERFORMANCE CHARACTERISTICS 1.1 1.2 1.3 1.4 1.5 1.6 1.7 Frequency : f (GHz) 1.8 1.9 2 1/18 XC2406A816UR-G ■BLOCK DIAGRAM * Diodes inside the circuit are an ESD protection diode. ■PRODUCT CLASSIFICATION ●Ordering Information PRODUCT NAME XC2406A816UR-G (*1) (*1) PACKAGE ORDER UNIT USP-8A01 3,000 / Reel The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. 2/18 XC2406A816UR-G ■PIN CONFIGURATION USP-8A01 (BOTTOM VIEW) ■PIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTION 1 RF_IN RF Signal Input 2 VSS1 Ground 3 VSS2 Ground 4 CE ON/OFF Control Pin 5 RF_OUT RF Signal Output 6 VDD Power Supply 7 RBIAS1 RBIAS Connect Pin 8 RBIAS2 RBIAS Connect Pin ■FUNCTION CHART PIN NAME CE SIGNAL STATUS CE Low Stand-by CE High Active CE OPEN Undefined State 3/18 XC2406A816UR-G ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS Power Supply Voltage VDD -0.3～4.0 CE Input Voltage VCE Current Circuit IDD -0.3～VDD+0.3 or 4.0 RBIAS1 RBIAS2 Input Voltage RBIAS2 -0.3～+1.6 RF Input Power PIN 10 VRF_IN V (*1) 42 RBIAS1 Input Voltage RF_IN Input Voltege UNITS -0.3～VDD+0.3 or 4.0 V mA (*1) V V dBm -0.3～RBIAS2+0.3 or +1.6 (*2) V -0.3～RBIAS2+0.3 or +1.6 (*2) V RF_OUT Input Voltege VRF_OUT Power Dissipation Pd 120 mW Operating Ambient Temperature Topr -40～+85 ℃ Storage Temperature Tstg -55～+125 ℃ * All voltages are described based on the VSS1 and VSS2 pin. VSS1 pin and VSS2 pin should be connected each other outside. (*1) The maximum value should be either VDD+0.3V or +4.0V in the lowest. (*2) The maximum value should be either RBIAS2+0.3V or +1.6V in the lowest. 4/18 XC2406A816UR-G ■ELECTRICAL CHARACTERISTICS ●DC Characteristics PARAMETER Ta=25℃ SYMBOL Power Supply Voltage VDD CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT RBIAS=390Ω (*2) 3.278 3.450 3.630 V ① RBIAS=300Ω (*2) 2.850 3.000 3.150 V ① RBIAS=270Ω (*2) 2.708 2.850 2.992 V ① 1.710 1.800 1.890 V ① - 6.6 8.9 mA ① - - 0.1 μA ① 1.71V≦VDD≦3.15V 1.1 - VDD V ① 3.15V<VDD≦3.63V 1.3 - VDD V ① - 0 - 0.4 V ① RBIAS=92Ω (*2) (*1) Current Circuit IDD Stand-by Current ISTBY CE "H" Level Voltage VCEH CE "L" Level Voltage VCEL 1.71V≦VDD≦3.63V VCE=VDD 1.71V≦VDD≦3.63V (*1) VCE=0V (*1) For the relation of VDD and RBIAS, Please refer to the “Power Supply Voltage vs. RBIAS Table” below. (*2) RBIAS should be used in ±1% tolerance and ±200ppm/℃ temperature stability. ●AC Characteristics PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Power Gain S21 f=1.575 GHz 15.0 18.0 - dB ② Input Return Loss S11 f=1.575GHz - 7.5 - dB ② Output Return Loss S22 f=1.575GHz - 13 - dB ② Isolation S12 f=1.575GHz - -33 - dB ② (*1) NF f=1.575GHz - 0.96 - dB ③ Input Power IP3 IIP3 f=1.575GHz, 1.576GHz - -20 - dBm ④ Input Power IP2 IIP2 f=0.8GHz, 2.375GHz - 12.2 - dBm ④ Input Power @ 1dB Gain Conpression P1dB f=1.575GHz - -28.0 - dBm ② Noise Figure (*1) VDD=VCE=2.85V, RBIAS=270Ω, Ta=25℃ NF is the value excluding the substrate loss. Power Supply Voltage vs. RBIAS VDD [V] RBIAS [Ω] 3.278～3.630 390 2.850～3.150 300 2.708～2.992 270 1.710～1.890 92 5/18 XC2406A816UR-G ■NOTE ON USE 1. For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings be exceeded. 2. Please eliminate static electricity from the operational table, people, and soldering iron. 3. Please use noiseless power supply for stable operation. 4. Please connect CBIAS to RBIAS2 pin as close as possible. 5. VSS1 pin and VSS2 pin should be connected each other outside. 6. Please ensure to use an external component which does not depend on bias or temperature too much. 7. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems. 6/18 XC2406A816UR-G ■TEST CIRCUITS ●Circuit ① (DC Characteristics: Power Supply Pin Voltage, Circuit Current, Stand-by current) RBIAS RBIAS2 PIN RF_IN RBIAS1 VSS1 VDD VSS2 RF_OUT CE CBIAS A POUT V VDD VCE * PIN / POUT is 50Ω ●Circuit ② (Power Gain, Input Return Loss, Output Return Loss, Isolation, Input Power @ 1dB Gain Compression) (*1) Refer to the circuit ⑤ for the block detail. ●Circuit ③ (Noise Figure) (*1) Refer to the circuit ⑤ for the block detail. 7/18 XC2406A816UR-G ■TEST CIRCUITS (Continued) ●Circuit ④ (Input Power IP3, Input Power IP2) (*1) Refer to the circuit ⑤ for the block detail. ●Circuit ⑤ (XC2406 series, the circuit of the block) 6.2nH PIN 10nH 3.9pF VDD [V] (TYP.) RBIAS [Ω] 3.45 3.00 2.85 1.80 420 390 360 120 RF_IN RBIAS1 VSS1 VDD VSS2 RF_OUT CE CBIAS POUT 7.5nH VDD VCE * RBIAS should be used in ±1% tolerance and ±200ppm/℃ temperature stability. 8/18 RBIAS RBIAS2 XC2406A816UR-G ■TEST CIRCUITS (Continued) Evaluation Board 18mm VDD 20mm RBIAS C1 L2 PIN L1 POUT L3 C2 VSS VCE PCB (FR-4) MICROSTRIPLINE WIDTH=0.6mm t=0.18mm PCB size=18mm × 20mm * Please use an external component which does not depend on bias or temperature too much. External Components SYMBOL SPEC COMMENT C1 10nF - C2 3.9pF - L1 6.2nH MURATA (LQW15A6N2G00D) L2 10nH MURATA (LQW15A10NG00D) L3 7.5nH MURATA (LQW15A7N5G00D) RBIAS - Less than ±1% tolerance, Less than ±200ppm / ℃ temperature stability 9/18 XC2406A816UR-G ■TYPICAL PERFORMANCE CHARACTERISTICS CE “H” Level Voltage vs. Supply Voltage (2)(2)CE"H"レベル電圧 - 電源端子電圧特性例 (1) (1) Current Circuits Supply Voltage 回路電流 - vs. 電源端子電圧特性例 XC2406A816 7 6.5 6 5.5 5 2.6 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 3.1 (3) CE “L” Level Voltage -vs. Power Supply Voltage (3) CE"L"レベル電圧 電源端子電圧特性例 CE "H" Level Voltage : VCEH (V) 7.5 Current Circuits : IDD (mA) XC2406A816 VDD=VCE, Ta=25℃ Ta=25℃ 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 2.6 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) (4) Power Gain vs. Power Supply Voltage (4) 挿入電力利得 - 電源端子電圧特性例 XC2406A816 Ta=25℃ VDD=VCE, Ta=25℃, f=1.575GHz 19 1 Power Gain : S21 (dB) CE "L" Level Voltage : VCEL (V) XC2406A816 1.1 0.9 0.8 0.7 0.6 0.5 18.5 18 17.5 0.4 2.6 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 17 2.6 3.1 -6 -6.5 -7 -7.5 -8 -8.5 -9 3.1 Output Return Loss : S22 (dB) Input Return Loss : S11 (dB) VDD=VCE, Ta=25℃, f=1.575GHz 10/18 3.1 XC2406A816 XC2406A816 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) (6) Output Return Loss vs. Supply Voltage (6) 出力側リターンロス - 電源端子電圧特性例 (5) Input Return Loss vs. Power Supply Voltage (5) 入力側リターンロス - 電源端子電圧特性例 2.6 3.1 VDD=VCE, Ta=25℃, f=1.575GHz -12 -12.5 -13 -13.5 -14 2.6 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 3.1 XC2406A816UR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (8) Noise Figure vs. Power Supply Voltage (8) 雑音指数 - 電源端子電圧特性例 (7)アイソレーション Isolation vs. Power Supply Voltage (7) - 電源端子電圧特性例 XC2406A816 VDD=VCE、Ta=25℃, f=1.575GHz Noise Figure : NF (dB) -30 Isolation : S12 (dB) XC2406A816 -31 -32 -33 -34 -35 2.6 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 1.4 1.2 1 0.8 0.6 0.4 2.6 3.1 (9)入力IP3 Input Power IP3 vs. Power Supply Voltage (9) - 電源端子電圧特性例 VDD=VCE、Ta=25℃, f=1.575GHz 1.6 -18 -19 -20 -21 -22 -23 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 3.1 VDD=VCE, Ta=25℃, f=0.8GHz, 2.375GHz Input Power IP2 : IIP2 (dBm) Input Power IP3 : IIP3 (dBm) XC2406A816 VDD=VCE, Ta=25℃, f=1.575GHz, 1.576GHz 2.6 3.1 (10)入力IP2 Input Power IP2 vs. Power Supply Voltage (10) - 電源端子電圧特性例 XC2406A816 -17 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 15 14 13 12 11 10 2.6 2.7 2.8 2.9 3 Power Supply Voltage : VDD (V) 3.1 (12) Power Gain -vs.周囲温度特性例 Ambient Temperature (11) 1dB利得圧縮時入力電力 Input Power @ 1dB Gain Compression vs. Power Supply Voltage (12) (11) - 電源端子電圧特性例 挿入電力利得 XC2406A816 VDD=VCE、Ta=25℃, f=1.575GHz -27 Power Gain : S21 (dB) Input Power @ 1dB Gain Compression : P1dB (dBm) XC2406A816 -27.5 -28 -28.5 -29 -29.5 -30 2.6 2.7 2.8 2.9 3 3.1 Power Supply Voltage : VDD (V) 22 21 20 19 18 17 16 15 14 -50 VDD=VCE=2.85V,f=1.575GHz -25 0 25 50 75 Ambient Temperature : Ta (℃) 100 11/18 XC2406A816UR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (13)入力側リターンロス Input Return Loss -vs. Ambient Temperature (13) 周囲温度特性例 (14) Output Return Loss vs. Ambient Temperature (14) 出力側リターンロス - 周囲温度特性例 XC2406A816 VDD=VCE=2.85V,f=1.575GHz -5 -6 -7 -8 -9 -10 -50 -25 0 25 50 75 Ambient Temperature : Ta (℃) 100 (15)アイソレーション Isolation vs. Ambient Temperature (15) - 周囲温度特性例 -11 -12 -13 -14 -15 -16 -50 XC2406A816 VDD=VCE=2.85V,f=1.575GHz VDD=VCE=2.85V,f=1.575GHz 2 Noise Figure : NF (dB) Isolation : S12 (dB) -25 0 25 50 75 100 Ambient Temperature : Ta (℃) (16)雑音指数 Noise Figure vs. Ambient Temperature (16) - 周囲温度特性例 XC2406A816 -30 -30.5 -31 -31.5 -32 -32.5 -33 -33.5 -34 -50 VDD=VCE=2.85V,f=1.575GHz -10 Output Return Loss : S22 (dB) Input Return Loss : S11 (dB) XC2406A816 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) 1.5 1 0.5 0 -50 -25 0 25 50 75 Ambient Temperature : Ta (℃) 100 XC2406A816 XC2406A816 12/18 -17 VDD=VCE=2.85V, f=1.575GHz, 1.576GHz -18 -19 -20 -21 -22 -23 -50 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) Input Power IP2 : IIP2 (dBm) (18) Input Power IP2 vs. Ambient Temperature (18) 入力IP2 - 周囲温度特性例 Input Power IP3 : IIP3 (dBm) (17) 入力IP3 Input Power IP3 vs. Ambient Temperature (17) - 周囲温度特性例 15 VDD=VCE=2.85V, f=0.8GHz, 2.375GHz 14 13 12 11 10 -50 -25 0 25 50 75 Ambient Temperature : Ta (℃) 100 XC2406A816UR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (20) Power Gain -vs. Frequency (19)1dB利得圧縮時入力電力 Input Power @ 1dB Gain Compression vs. Ambient Temperature (20) (19) - 周囲温度特性例 挿入電力利得 周波数特性例 XC2406A816 VDD=VCE=2.85V,f=1.575GH z -27 -27.5 -28 -28.5 -29 -29.5 -30 -50 Power Gain : S21 (dB) Input Power @ 1dB Gain Compression : P1dB (dBm) XC2406A816 VDD=VCE=2.85V,f=1.575GHz 28 26 24 22 20 18 16 14 12 10 -40℃ 25℃ 85℃ 1 -25 0 25 50 75 100 Ambient Temperature : Ta (℃) 1.2 XC2406A816 Input Return Loss : S11 (dB) VDD=VCE=2.85V -40℃ 25℃ 85℃ 1.2 1.4 1.6 1.8 Frequency : f (GHz) 2 Output Return Loss : S22 (dB) XC2406A816 1 XC2406A816 1 1.2 25℃ 85℃ 1.4 1.6 1.8 Frequency : f (GHz) 2 VDD=VCE=2.85V -20 -40 -60 25℃ -40℃ 85℃ -80 -100 1.4 1.6 1.8 Frequency : f (GHz) 2 Power Gain : S21 (dB) VDD=VCE=2.85V Isolation : S12 (dB) -40℃ XC2406A816 0 1.2 VDD=VCE=2.85V 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 (24)挿入電力利得－入力電力特性例 Power Gain vs. Input Power (24) (23) Isolation アイソレーション - 周波数特性例 (23) vs. Frequency 1 2 (22)出力側リターンロス Output Return Loss vs. Frequency (22) - 周波数特性例 (21) Return Loss vs. Frequency (21) Input 入力側リターンロス - 周波数特性例 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 1.4 1.6 1.8 Frequency : f (GHz) 26 24 -40℃ 25℃ 22 20 18 16 85℃ 14 12 10 8 6 4 -40 -35 -30 -25 -20 -15 Input Power : PIN (dBm) -10 13/18 XC2406A816UR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (26) Input Return Loss vs. Frequency (Smith Chart) (26)入力側リターンロス －周波数特性例 (スミス図) (25) Power /－IM3 vs. Input Power (25) Output 出力電力/IM3 入力電力特性例 XC2406A816 0 -10 Desire -20 Undesire -30 -40 -50 -60 IM3 -70 -80 -60 -50 -40 -30 -20 -10 Input Power : PIN (dBm) 80 70 60 50 40 30 20 10 0 Inter-Modulation distortion: IM3 (dBm) Output Power : POUT (dBm) VDD=VCE=2.85V, Ta=25℃, f=1.575GHz, 1.576GHz 0 (27) Output 出力リターンロス －周波数特性例 (27) Return Loss vs. Frequency(スミス図) (Smith Chart) XC2406A816 VDD=VCE=2.85V, Ta=25℃ f=1GHz～2GHz f=1.575GHz 14/18 XC2406A816 VDD=VCE=2.85V, Ta=25℃ f=1GHz～2GHz f=1.575GHz XC2406A816UR-G ■PACKAGING INFORMATION ●USP-8A01 (unit:mm) 1.5±0.05 1PIN INDENT 0.1±0.05 0.1±0.05 4 3 5 2 6 1 7 8 0.3±0.05 0.2±0.05 0.3±0.05 15/18 XC2406A816UR-G ■PACKAGING INFORMATION (Continued) ●USP-8A01 Reference Pattern Layout (unit:mm) Is cupper area. 0.75 ※0.85 0.75 ※0.85 ●USP-8A01 Reference Metal Mask Design (unit:mm) 16/18 1.9 ※2.0 0.25 ※0.35 0.25 0.25 ※0.35 ※0.35 0.5 0.5 ※0.35 ※0.35 ※0.45 0.25 0.25 0.35 Mark ※ is opening of resist. XC2406A816UR-G ■MARKING RULE USP-8A01 ① represents product series. 8 ① ② ③ 3 6 ⑤ 2 7 ④ 1 4 5 MARK PRODUCT SERIES 6 XC2406******-G ② represents product. MARK ② A PRODUCT SERIES XC2406A*****-G ③ represents product. MARK ③ 8 PRODUCT SERIES XC2406*8****-G ④,⑤ represents production lot number. 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ and B1 to ZZ in order. (G, I, J, O, Q, W excepted) *No character inversion used. 17/18 XC2406A816UR-G 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 18/18