FJA3835 NPN Epitaxial Silicon Transistor • • • • Power Amplifier High Current Capability : IC=8A High Power Dissipation Wide S.O.A TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T a = 25°C unless otherwise noted Symbol Parameter Collector-Base Voltage VCBO Ratings 200 Units V 120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 8 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A PC Collector Dissipation (TC =25°C) 80 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=5mA, IE=0 Min. 200 120 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=¥ BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 ICBO Collector Cut-off Current VCB=80V, IE=0 Emitter Cut-off Current VEB=4V, IC=0 IEBO hFE * DC Current Gain VCE=4V, IC=3A Typ. Max. Units V V 8 V 120 0.1 mA 0.1 mA 250 VCE(sat) Collector-Emitter Saturation Voltage IC=3A, IB=0.3A 0.5 VBE(sat) Base-Emitter On Voltage IC=3A, IB=0.3A 1.2 fT Current Gain Bandwidth Product VCE=5V, IC=1A Cob Output Capacitance tON Turn On Time tF Fall Time tSTG Storage Time V V 30 MHz VCB=10V, f=1MHz 210 pF VCC =20V, IC=1A=10IB1=-10IB2 RL=20W 0.26 ms 0.68 ms 6.68 ms * Pulse Test: Pulse Width£300ms, Duty Cycle£2% © 2007 Fairchild Semiconductor Corporation FJA3835 Rev. 1.0.0 www.fairchildsemi.com 1 FJA3835 — NPN Epitaxial Silicon Transistor October 2008 FJA3835 — NPN Epitaxial Silicon Transistor Typical Characteristics 1000 7 IB = 35mA VCE = 4V hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 6 5 4 3 IB = 10mA 2 IB = 5mA o o TC = 125 C o 100 0 2 4 6 10 0.01 8 0.1 VCE [V], COLLECTOR-EMITTER VOLTAGE 10 IC = 10 IB I C = 10 IB VBE(sat), SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE 10 Figure 2. DC current Gain 1 0.1 o TC = - 25 C o TC = 25 C o TC = 75 C o TC = 125 C 0.01 1E-3 0.01 0.1 1 o 1 o TC = - 25 C o o TC = 125 C 0.1 0.01 10 TC = 25 C TC = 75 C 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 140 100 120 IC MAX. (Pulse) PC[W], POWER DISSIPATION 100ms 10 IC MAX. (DC) 10ms 1 0.1 Single Pulse o TC=25[ C] 0.01 0.1 1 IC [A], COLLECTOR CURRENT Figure 1. Static Characterstic IC[A], COLLECTOR CURRENT TC = 25 C o TC = - 25 C 1 0 100 80 60 40 20 0 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating © 2007 Fairchild Semiconductor Corporation FJA3835 Rev. 1.0.0 TC = 75 C www.fairchildsemi.com 2 FJA3835 — NPN Epitaxial Silicon Transistor Package Dimension (TO-3P) 5.00 4.60 15.80 15.40 1.65 1.45 5.20 4.80 (R0.50) 20.10 19.70 18.90 18.50 3.70 3.30 (1.85) 2.20 1.80 2.60 2.20 20.30 19.70 3.20 2.80 0.55 1.20 0.80 1 3 5.45 0.75 0.55 5.45 (R0.50) NOTES: A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONING AND TOLERANCING PER ASME14.5 1973. D) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. E) DRAWING FILE NAME: TO3P03AREV2. © 2007 Fairchild Semiconductor Corporation FJA3835 Rev. 1.0.0 www.fairchildsemi.com 3 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation FJA3835 Rev. A1 www.fairchildsemi.com 4 FJA3835 NPN Epitaxial Silicon Transistor TRADEMARKS