ONSEMI NRVBA340T3G

MBRA340T3G,
NRVBA340T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
40 VOLTS
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
SMA
CASE 403D
STYLE 1
1
Cathode
MARKING DIAGRAM
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
2
Anode
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
Device Meets MSL 1 Requirements
A34
AYWWG
A34
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRA340T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel **
NRVBA340T3G
SMA
(Pb−Free)
5,000 /
Tape & Reel **
Device
** 12 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6
1
Publication Order Number:
MBRA340T3/D
MBRA340T3G, NRVBA340T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 100°C)
IO
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Storage/Operating Case Temperature
A
3.0
A
100
Tstg, TC
−55 to +150
°C
TJ
−55 to +150
°C
Operating Junction Temperature (Note 1)
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
V/ms
10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RθJL
RθJA
15
81
°C/W
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 2)
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
Value
VF
Maximum Instantaneous Forward Voltage (Note 3)
TJ = 25°C
TJ = 100°C
0.450
0.390
TJ = 25°C
TJ = 100°C
0.3
15
(IF = 3.0 A)
Maximum Instantaneous Reverse Current
IR
Unit
(VR = 40 V)
Volts
mA
3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
1
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
TJ = 125°C
0.1
0.10
TJ = 100°C
0.20
TJ = 25°C
0.30
0.40
TJ = −55°C
0.50
1
0.1
0.10
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
TJ = 125°C
TJ = 100°C
TJ = −55°C
TJ = 25°C
0.20
0.30
0.40
0.50
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
http://onsemi.com
2
0.60
IR, REVERSE CURRENT (AMPS)
100E−3
IR, MAXIMUM REVERSE CURRENT (AMPS)
MBRA340T3G, NRVBA340T3G
100E−3
TJ = 125°C
10E−3
1E−3
TJ = 100°C
100E−6
10E−6
TJ = 25°C
1E−6
10E−3
TJ = 100°C
1E−3
TJ = −55°C
10E−9
1E−9
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
TJ = −55°C
10E−6
40
1E−6
0
5
dc
freq = 20 kHz
4
3.5
3
2.5
2
1.5
SQUARE WAVE
Ipk/IO = p
Ipk/IO = 5
Ipk/IO = 10
1
0.5
0
25
50
75
100
125
150
TL, LEAD TEMPERATURE (°C)
1.6
SQUARE
WAVE
1.4
TJ, DERATED OPERATING TEMPERATURE (°C)
TJ = 25 °C
0
5
dc
1.2
1.0
0.8
Ipk/IO = p
0.6
Ipk/IO = 5
0.4
Ipk/IO = 10
0.2
0
Ipk/IO = 20
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Forward Power Dissipation
C, CAPACITANCE (pF)
100
40
1.8
Figure 5. Current Derating
1000
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Maximum Reverse Current
PFO, AVERAGE POWER DISSIPATION (WATTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Reverse Current
4.5
TJ = 25°C
100E−6
100E−9
100E−12
TJ = 125°C
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
35
40
125
RqJA = 22 °C/W
115
105
RqJA = 43 °C/W
95
RqJA = 63 °C/W
85
RqJA = 81 °C/W
75
RqJA = 96 °C/W
65
55
0
Figure 7. Capacitance
5
35
10
15
20
25
30
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature
Derating
http://onsemi.com
3
40
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
MBRA340T3G, NRVBA340T3G
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
t, TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Figure 9. Thermal Response, Junction−to−Ambient (min pad)
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.1
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 10. Thermal Response, Junction to Ambient (1 inch pad)
http://onsemi.com
4
MBRA340T3G, NRVBA340T3G
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE F
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.006
0.064
0.016
0.115
0.180
0.220
0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBRA340T3/D