SMD Type Product specification FDN360P Single P-Channel PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • • Low gate charge (5nC typical). These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Fast switching speed. • High performance trench technology for extremely low RDS(ON). Applications • High power and current handling capability. • • • -2 A, -30 V. RDS(on) = 0.080 Ω @ VGS = -10 V RDS(on) = 0.125 Ω @ VGS = -4.5 V. DC/DC converter Load switch Motor drives D D S TM SuperSOT -3 Absolute Maximum Ratings Symbol S G G TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage V ID Drain Current ±20 -2 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation TJ, Tstg A -20 (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 250 Thermal Resistance, Junction-to-Case (Note 1) 75 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 360 FDN360P 7’’ 8mm 3000 units http://www.twtysemi.com 4008-318-123 1 of 2 SMD Type Product specification FDN360P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse IGSSR On Characteristics VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -24 V, VGS = 0 V -30 V mV/°C 20 VGS = 20 V, VDS = 0 V 100 µA nA VGS = -20 V, VDS = 0 V -100 nA -1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current ID = -250 µA, Referenced to 25°C VGS = -10 V, ID = -2 A VGS = -10 V, ID = -2 A, TJ=125°C VGS = -4.5 V, ID = -1.5 A VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -2 A 5.5 VDS = -15 V, VGS = 0 V, f = 1.0 MHz 420 pF 140 pF 60 pF -1 -1.8 -3 0.060 0.080 0.095 V mV/°C -4 0.080 0.136 0.125 -20 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω td(off) Turn-Off Delay Time 18 29 ns tf Turn-Off Fall Time 6 12 ns Qg Total Gate Charge 5 7 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -15 V, ID = -2 A, VGS = -10 V, 9 18 ns 8 16 ns 1.7 nC 1.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2) -0.75 -0.42 A -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. b) 270°C/W when mounted on a 0.001 in2 pad of 2 oz. Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com 4008-318-123 2 of 2