NTS4172N Power MOSFET 30 V, 1.7 A, Single N−Channel, SC−70 Features • • • • Low On−Resistance Low Gate Threshold Voltage Halide Free This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications • Low Side Load Switch • DC−DC Converters (Buck and Boost Circuits) • Optimized for Battery and Load Management Applications in 30 V Portable Equipment like Cell Phones, PDA’s, Media Players, etc. RDS(on) MAX ID MAX 93 mW @ 10 V 1.7 A 100 mW @ 4.5 V 1.5 A 140 mW @ 2.5 V 1.0 A SC−70/SOT−323 (3 LEADS) D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C t≤5s TA = 25°C Steady State TA = 85°C 1.6 ID 1.13 S A 1.70 TA = 25°C PD W 1 0.350 IDM 3.4 A TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 0.25 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature MARKING DIAGRAM/ PIN ASSIGNMENT 3 0.294 t≤5s Pulsed Drain Current G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 Drain 2 SC−70/SOT−323 CASE 419 STYLE 8 TFMG G 1 Gate 2 Source TF = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION THERMAL RESISTANCE RATINGS Symbol Max Unit Device Package Shipping† Junction−to−Ambient − Steady State (Note 1) RqJA 425 °C/W NTS4172NT1G 3000/Tape & Reel Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA 360 SC−70 (Pb−Free) Parameter 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. * Date code orientation may vary depending upon manufacturing location © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. 0 1 Publication Order Number: NTS4172N/D NTS4172N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS /TJ ID = 250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V, TJ = 25°C VGS = 0 V, VDS = 24 V, TJ = 125°C 1.0 5.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "12 V ±100 nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.4 V Negative Threshold Temperature Coefficient VGS(TH) /TJ Drain−to−Source On−Resistance RDS(on) OFF CHARACTERISTICS V 8.4 mV/°C ON CHARACTERISTICS (Note 3) Forward Transconductance 0.6 1.0 3.1 gFS mV/°C VGS = 10 V, ID = 1.7 A 58 93 mW VGS = 4.5 V, ID = 1.5 A 64 100 VGS = 2.5 V, ID = 1.0 A 79 140 VDS = 5.0 V, ID = 1.7 A 4.2 S 381 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 0 V, f = 1.0 MHz, VDS = 15 V 39.6 32.6 nC 4.38 VGS = 4.5 V, VDS = 15 V, ID = 1.7 A 0.40 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.33 RG 4.5 W td(on) 7.5 ns Gate Resistance 0.62 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDD = 15 V, ID = 1.7 A, RG = 3 W tf 4.4 16.1 2.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 1.0 A 0.76 7.9 VGS = 0 V, IS = 1.0 A, dISD/dt = 100 A/ms QRR http://onsemi.com 2 V ns 5.0 2.9 2.0 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% 4. Switching characteristics are independent of operating junction temperatures 1.0 nC NTS4172N TYPICAL CHARACTERISTICS TJ = 25°C 4.5 V 2.5 V 1.8 V 1.5 1.7 V 1.0 1.6 V 0.5 1.5 V 0.5 1.0 1.5 2.0 2.5 1.5 TJ = 125°C 1.0 TJ = 25°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 1.7 A TJ = 25°C 0.10 0.08 0.06 0.04 1 2.0 TJ = −55°C 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 3.0 0.12 0.02 2.5 0.5 VGS = 1.4 V 0 VDS ≥ 10 V 3.0 ID, DRAIN CURRENT (A) 2.0 V 2.0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 3.5 10 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 2.5 2 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.10 TJ = 25°C 0.09 VGS = 4.5 V 0.07 0.06 VGS = 10 V 0.05 0.04 0.03 0.02 0.01 0 0.5 10,000 IDSS, LEAKAGE (nA) 1.2 1.0 1000 TJ = 150°C 100 TJ = 125°C 0.8 −25 0 25 50 75 100 125 2.0 VGS = 0 V ID = 1.7 A VGS = 10 V 0.6 −50 1.5 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.0 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage 1.4 VGS = 2.5 V 0.08 150 10 5 TJ, JUNCTION TEMPERATURE (°C) 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTS4172N TYPICAL CHARACTERISTICS VGS = 0 V TJ = 25°C 500 Ciss 400 300 200 Coss 100 0 1000 Crss 2 0 4 6 8 10 12 14 16 18 20 22 24 26 28 30 QT 4.0 3.5 3.0 2.5 Qgs 2.0 Qgd 1.5 1.0 ID = 1.7 A TJ = 25°C 0.5 0 0 1.0 2.0 3.0 4.0 5.0 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 1.5 VDD = 15 V ID = 1.7 A VGS = 4.5 V 100 td(off) tf tr 10 1.0 4.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 600 t, TIME (ns) VGS, GATE−TO−SOURCE VOLTAGE (V) 700 td(on) 1.0 10 VGS = 0 V TJ = 25°C 1.0 0.5 0 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTS4172N PACKAGE DIMENSIONS D SC−70 (SOT−323) CASE 419−04 ISSUE M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 DIM A A1 A2 b c D E e e1 L HE 2 b e A 0.05 (0.002) c A2 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN L A1 MIN 0.80 0.00 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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