ONSEMI MBR3045WT

MBR3045WT
SWITCHMODEt
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
http://onsemi.com
• Dual Diode Construction; Terminals 1 and 3 may be Connected for
•
•
•
•
•
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 45 VOLTS
Parallel Operation at Full Rating
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Popular TO−247 Package
Pb−Free Package is Available*
Mechanical Characteristics
1
2
3
4
• Case: Epoxy, Molded
• Weight: 4.3 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
1
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR, TC = 105°C)
Per Device
Per Diode
IF(AV)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz)
Per Diode
IFRM
30
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
200
A
Peak Repetitive Reverse Current (2.0 ms,
1.0 kHz) Per Diode (See Figure 6)
IRRM
2.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Peak Surge Junction Temperature
(Forward Current Applied)
TJ(pk)
175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
March, 2010 − Rev. 4
TO−247
CASE 340L
PLASTIC
3
MARKING DIAGRAM
A
30
15
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
2
1
MBR3045WT
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MBR3045WT
MBR3045WTG
Package
Shipping
TO−247
30 Units/Rail
TO−247
(Pb−Free)
30 Units/Rail
Publication Order Number:
MBR3045WT/D
MBR3045WT
THERMAL CHARACTERISTICS (Per Diode)
Rating
Thermal Resistance, Junction−to−Case
Junction−to−Ambient
Symbol
Max
Unit
RqJC
RqJA
1.4
40
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
(iF = 20 Amps, TC = 125°C)
(iF = 30 Amps, TC = 125°C)
(iF = 30 Amps, TC = 25°C)
vF
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR
V
0.6
0.72
0.76
mA
100
1.0
100
50
30
20
100
TJ = 150°C
10
IR , REVERSE CURRENT (mA)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
25°C
5.0
3.0
2.0
1.0
0.5
0.3
0.2
TJ = 150°C
125°C
10
100°C
1.0
75°C
0.1
25°C
0.01
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5.0
10
15
20
25
30
35
40
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
http://onsemi.com
2
45
50
20
I
PK + p(RESISTIVELOAD)
I
AV
15
SQUARE
WAVE
10
dc
5.0
I
(CAPACITIVELOAD) PK + 20, 10, 5
I
AV
0
60
70
80
90
100
110
120
130
140
150
160
TC, CASE TEMPERATURE (°C)
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
MBR3045WT
20
I
(CAPACITIVELOAD) PK + 20, 10, 5
I
SINE WAVE
RESISTIVE LOAD
AV
15
SQUARE
WAVE
10
dc
TJ = 125°C
5.0
0
0
Figure 3. Current Derating (Per Leg)
5.0
10
15
20
25
30
35
Figure 4. Forward Power Dissipation (Per Leg)
+150 V, 10 mAdc
2.0 kW
3000
VCC
C, CAPACITANCE (pF)
2000
12 Vdc
D.U.T.
12 V
100
2N2222
1000
900
800
700
600
500
+
4.0 mF
2.0 ms
1.0 kHz
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
400
100 W
CARBON
2N6277
1.0 CARBON
300
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
40
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
50
1N5817
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
Figure 6. Test Circuit for Repetitive Reverse
Current
http://onsemi.com
3
MBR3045WT
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
H
G
D 3 PL
0.25 (0.010)
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
S
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBR3045WT/D