an AMP company RF MOSFET Power 100 - 500 MHz Transistor, lOOW, 28V UF281 OOM Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C pi Power Dissipation PD 250 W JunctionTemperature T, 200 “C Storage Temperature T STG -55 to +150 “C Thermal Resistance ElJO 0.7 “Ciw Electrical Characteristics Drain-Source &w t.74 .m4 1 ale 505 a&b, am 1 a?4 P m a¶ ooc 1 ace at 25°C ( I Parameter I4 II Breakdown Voltage Symbol BVDSS 1 Min 65 1 Max 1 Units 1 - V I V,,=O.O V, I,,=150 ‘OS5 3.0 mA Gate-Source ‘GSS 3.0 pA v,,=20 2.0 6.0 V V,,=lO.O V, 1,,=300.0 1.5 - S V,,=lO.O V, 1,,=3000.0 V GSCTHI Gate Threshold Voltage v,,=2a.o mA’ Drain-Source LeakageCurrent Leakage Current 1 Test Conditions v. vo,=o.o v v, v,,=o.o V’ mA‘ mA, ~v,,=l .OV, 80 ps Pulse’ ForwardTransconductance GM input Capacitance C ISS 135 pF v,=2a.o v, F=l .o MHz’ Output Capacitance C OS.5 90 pF V,s=28.0 V, F=l .O MHz’ Reverse Capacitance C RSS 24 pF v,,=2a.ov, F=I .OMHZ* 10 - dB V,,=28.0 -- V, 1,,=600.0 mA, P,,=lOO.O W. F=500 MHz Drain Efficiency 50 - % v,,=%.O V, 1,,=600.0 mA, P,,=lOO.O W, F=500 MHz Return Loss 10 - dB V,,=28.0 V, 1,,=600.0 mA, PO,,=1 00.0 W, F=500 MHz - 3O:l - v,,=28.0 V. 1,,=600.0 mA, P,,,.=100.0 Power Gain % VSWR-T Load Mismatch Tolerance I W, F=500 MHz * Per Side Specifications Subject to Change Without Notice. M/A-COM, North America: Tel. (800) 366-2266 Fax (800) 678-8883 m Asia/Pacific: Tel. Fax +81 (03) 3226-1671 +81 (03) 3226-1451 n Europe: Tel. Fax +44 +44 (1344) (1344) inc. 869 595 300 020 UF281OOM IOOW, 28V RF MOSFET Power Transistor, v2.00 Typical Broadband EFFICIENCY P,=lO W I,,=600 80. Performance Curves POWER OUTPUT vs SUPPLY VOLTAGE vs FREQUENCY mA Device) (Push-Pull P,,,=lO W I,,=600 mA F=500 MHz loo 80 60 20 t 100 200 300 FREQUENCY 400 so0 14 16 20 24 28 32 SUPPLY VOLTAGE (V) (MHz) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=600 mA (Push-Pull Device) s 80 e i3 60 5 fs 40 0 20 0 0 1 2 4 6 8 10 12 POWER INPUT(W) Specifications M/A-COM, Subject to Change Without Notice. Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 = Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 UF28100M RF MOSFET Power Transistor, IOOW, 28v v2.00 Typical Device Impedance Frequency (MHz) 100 ( 1 300 500 Z,, (OHMS) Z,,,D (OHMS) 4.5 - j 6.0 14.5+jO.5 2.25 - j 1.75 1 1.5 + j 5.5 V,,=28 Z,, is the series equivalent input impedance Z LcADis the pptimum series equivalent 7.5+j 1.0 I 3.5 - j 3.5 V, I,=600 mA, P,,,=lOO.O I Watts of the device from gate to gate. load impedance as measured from drain to drain. RF Test Fixture PARTS LIST Cl .c8 CHIP CAPACITOR. 2.OpF ATC B c2m CHIP CAPACITOR. EOXPF c4 CHIP CAPACTTOR.S7pF ATC B c.5 CHIP CAPACITOR. 2WpF ATC B c&c7 CHIP CAPACXTOR..OlSuF CS.ClO CHIP CAPACTOR. 5BOpFATC B Cl1 CHIP CAPACITOR. O.BpFATC 8 Cl2 ELECTROLYI-IC CAPACTTOR.SOuF54 VOLTS Rl.lU RESISTOR. 27 OHM 25 WAH RR3 RBSI.TOR. 22K OHM 25 WATT Ll INDUCTOR. S TURNS OF NO. 18 AWG ON ‘.lO I2 INDUCTOR. 1ONRNS 11 ,:l BALUN TRANSFORMER 50 OIIM SEMI-RIGID WAX 72 61 BALUN TRANSFORMER. 25 OHM SEMI-RIGID COAX l3 1:s BALUN TR*NsFoRMER OF NO. 27 AWG ON R4 ‘.cesX3-LONG ‘370’ X 2.3 LONG 10 OHM SEMI-RIGIG COAX ‘370 X 25’ LONG 74 1:l BALUN TRAMFORMER. 50 OHM SEMI-RIGID COAX ‘.oBs x 4. LONG Specifications Subject tD Change !ffiiDut 01 uF2s1ooM BOARD ROGERS 5870. .m?’ THICK JlJ2 CONNECIOR. TYPE ‘N J3.JdJ5 BANANAJACK HEATSMK FINNED ALUMINUM. DiN 73XD1B2-03 Notice. M/A-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 B Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020