Power Transistors www.jmnic.com BD680 Silicon PNP Transistors Features ECB With TO-126 package In monolithic Darlington configuration This transistor is intended for use in medium power linar and switching applications Complement to type BD679 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V 4 A W IB Base Current IC Collector current-Continuous PD Total Power Dissipation@TC=25 40 Tj Junction temperature 150 Tstg Storage temperature -55~150 TO-126 Electrical Characteristics Tc=25 SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage VCBO Collector-Base Voltage ICEO Collector Cutoff Current CONDITIONS IC=50mA; IB=0 MIN MAX 80 UNIT V VCE=40V; IB=0 500 uA ICBO Collector Cutoff Current VCB=80V; IE=0 200 uA IEBO Emitter Cutoff Current VEB=5V; IC=0 2 mA VEBO Emitter Cutoff Current 2.5 V VCE(sat-1) Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages VCE(sat-3) Collector-emitter saturation voltages hFE-1 Forward current transfer ratio hFE-2 Forward current transfer ratio VBE(sat-1) Base-Emitter Saturation Voltage VBE(sat-2) Base-Emitter Saturation Voltage fT Current Gain-Bandwidth Product IC=1.5A; IB=30mA IC=1.5A; VCE=3V 750