IXFR24N100 HiPerFETTM Power MOSFET ISOPLUS247TM VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = = ≤ ≤ 1000V 22A Ω 390mΩ 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 22 A IDM TC = 25°C, pulse width limited by TJM 96 A IA TC = 25°C 24 A EAS TC = 25°C 3 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 416 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 20..120 / 4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting force t = 1min t = 1s Weight Isolated Tab G = Gate S = Source D = Drain Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated l • Fast intrinsic Rectifier Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 12A, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 5.5 V ±200 nA TJ = 125°C 100 μA 2 mA • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor drives Advantages • Easy assembly • Space savings • High power density 390 mΩ DS98599C(10/08) IXFR24N100 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 15 VDS = 10V, ID = 12A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 12A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 12A Qgd 27 S 8700 pF 785 pF 315 pF 35 ns 35 ns 75 ns 21 ns 267 nC 52 nC 142 nC ISOPLUS247 (IXFR) Outline 0.30 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 24 A ISM Repetitive, pulse width limited by TJM 96 A VSD IF = 24A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 24A, -di/dt = 100A/μs 1.0 8.0 VR = 100V, VGS = 0V 250 ns μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR24N100 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 24 55 VGS = 10V 7V VGS = 10V 50 20 45 ID - Amperes ID - Amperes 40 16 6V 12 8 7V 35 30 25 20 6V 15 10 4 5V 5 0 5V 0 0 1 2 3 4 5 6 7 8 9 0 3 6 9 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 24 2.8 VGS = 10V 2.6 20 VGS = 10V 2.4 RDS(on) - Normalized 6V ID - Amperes 12 VDS - Volts VDS - Volts 16 12 8 2.2 2.0 I D = 24A 1.8 I D = 12A 1.6 1.4 1.2 1.0 5V 4 0.8 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 24 22 VGS = 10V 2.4 TJ = 125ºC 20 2.2 18 2.0 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 16 14 12 10 8 6 1.2 4 TJ = 25ºC 1.0 2 0.8 0 0 5 10 15 20 25 30 35 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 40 45 50 55 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXFR24N100 Fig. 8. Transconductance Fig. 7. Input Admittance 60 45 TJ = - 40ºC 40 50 TJ = 125ºC 25ºC - 40ºC 30 25 g f s - Siemens ID - Amperes 35 20 25ºC 40 125ºC 30 20 15 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 5 10 15 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 40 45 50 210 240 270 Fig. 10. Gate Charge 10 70 9 VDS = 500V 8 I G = 10mA 60 I D = 12A 50 7 VGS - Volts IS - Amperes 20 ID - Amperes 40 TJ = 125ºC 30 TJ = 25ºC 20 6 5 4 3 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 30 60 VSD - Volts 90 120 150 180 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Capacitance - PicoFarads f = 1MHz Ciss Z(th)JC - ºC / W 10,000 Coss 1,000 0.100 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts 0.010 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_24N100(9X)10-17-08-C