ROHM RFU20TM5S_11

Data Sheet
Super Fast Recovery Diode
RFU20TM5S
Dimensions(Unit : mm)
Series
Ultra Fast Recovery
Structure
Applications
General rectification
(1) (2) (3)
Features
1)Cathode common Single type.(TO-220)
2)Ultra high switching speed
(1)
(2)
(3)
Construction
Silicon epitaxial planer
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics(Tj=25C)
Parameter
Symbol
Thermal Resistance
Limits
Unit
Duty0.5
Direct voltage
530
530
20
V
V
A
100
A
150
55 to 150
C
C
Tc=95C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
60Hz half sin wave, Resistance load,
Conditions
Min.
Typ.
Max.
VF
IR
IF=20A
VR=530V
-
1.65
0.05
2
Unit
V
10
μA
trr
Rth(j-c)
IF=0.5A,IR=1A,Irr=0.25×IR
-
23
-
30
1.8
ns
Forward voltage
Reverse current
Reverse recovery time
Conditions
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© 2011 ROHM Co., Ltd. All rights reserved.
junction to case
1/3
C/W
2011.06 - Rev.A
Data Sheet
RFU20TM5S
Electrical characteristic curves
100
100000
1000
10
Tj=125C
Tj=25C
1
10000
Tj=125C
1000
f=1MHz
Tj=25C
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Tj=150C
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(A)
Tj=150C
100
100
10
Tj=25C
0.1
0
500
1000
1500
2000
2500
3000
0
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
200
300
400
500
0
600
1600
1500
AVE : 1567mV
Tｊ=25C
VR=530V
n=20pcs
AVE : 64.0nA
10
VF DISPERSION MAP
410
8.3ms
200
AVE : 231.0A
150
AVE : 419pF
370
Ct DISPERSION MAP
1000
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
35
30
25
20
AVE : 22.7ns
15
100
IFSM
8.3ms
10
1
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
t
100
4
3
2
AVE : 0.9kV
AVE : 2.32kV
1
0
10
10
TIME : t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
100
100
5
C=100pF
R=1.5k
C=200pF
R=0
ESD DISPERSION MAP
2/3
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
1000
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
IFSM
8.3ms
1cyc
10
100
30
390
PEAK SURGE
FORWARD CURRENT : I FSM(A)
REVERSE RECOVERY TIME : trr(ns)
1cyc
25
350
40
IFSM
20
Tｊ=25C
f=1MHz
VR=0V
n=10pcs
IR DISPERSION MAP
300
15
430
1
1400
250
10
450
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Tｊ=25C
IF=20A
n=20pcs
1700
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
100
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
100
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1800
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
1
IF=1A
IM=100mA
10
1ms
time
Rth(j-a)
300us
Rth(j-c)
1
0.1
0.001
0.01
0.1
1
10
TIME : t(s)
Rth-t CHARACTERISTICS
100
1000
2011.06 - Rev.A
Data Sheet
RFU20TM5S
Io
0A
0V
VR
t
D=t/T
35
FORWARD POWER
DISSIPATION : Pf(W)
D=0.5
D.C.
D=0.1
D=0.05
20
D.C.
30
0V
15
10
5
0
D=t/T
D=0.8
25
T
VR=430V
Tj=150C
D=0.5
20
half sin wave
15
D=0.2
10
D=0.1
D=0.05
5
30
VR
t
D=0.2
0
0
5
10
15
20
25
30
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
35
T
Io
0A
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
half sin wave
25
D=0.8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
30
35
VR=430V
Tj=150C
D.C.
D=0.8
25
D=0.5
20
half sin wave
15
D=0.2
10
D=0.1
D=0.05
5
0
0
30
60
90
120
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
3/3
150
0
30
60
90
120
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
150
2011.06 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A