Schottky Detector Diodes Schottky Detector Diodes Rev. V3 Features • Wide Selection of Packages for Stripline, Coaxial, and Waveguide Detectors • Chip Diodes Available • Both P and N Type Diodes • Excellent Sensitivity Through Ka-Band • Low 1/F Noise Case Styles (See appendix for complete dimensions) Description This family of low capacitance Schottky diodes is designed to give superior performance in video detectors and power monitors from 100 MHz through 40 GHz. They have low junction capacitance and repeatable video impedance. These diodes are available in a wide range of ceramic, stripline and axial lead packages and as bondable chips. Both P and N type diodes are offered. Applications Detectors and power monitors in stripline, coaxial and waveguide circuits through 40 GHz. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Schottky Detector Diodes Schottky Detector Diodes Rev. V3 Maximum Ratings Temperature Ratings Storage Operating Temperature -65°C to +150°C (Case Styles 54, 119, 120, 135, 135A, 186, 276) -65°C to +125°C (Case Styles 137, 213) Power Ratings @ 25°C Maximum Peak Incident RF Power S-X Band 1 Watt - 1 microsecond maximum pulse length Ku-K Band 0.5 W - 1 microsecond maximum pulse length S-X Band 150 mW (maximum) Ku-K Band 100 mW (maximum) Maximum CW RF Power Derate Linearity to Zero at 150°C Solder Temperature For case styles 54, 119, 186, 276 For case style 120 For case styles 137 and 213 230°C for 5 seconds, 1 mm from package 200°C for 5 seconds 150°C for 5 seconds, 1 mm from package Packaged N Type Silicon Schottky Detector Diodes These low barrier packaged detector diodes are suitable for use in stripline, waveguide, and coaxial detectors. They feature high sensitivity and low l/f noise. These diodes are listed by increasing test frequency, grouped by packages style and decreasing Tss. Other case styles than those specified may be available. Specifications @ TA = +25°C Video Impedance 3,4 Range Min./Max. (k Ohms) Model Number 1 Case Style Test Frequency (GHz) Maximum2,3 Tang. Signal Sensitivity TSS (dBm) MA40053 54 3 -55 1/2 MA40064 119 3 -55 1/2 MA40202 54 10 -55 1/2 MA40201 119 10 -55 1/2 MA40207 120 10 -55 1/2 MA40205 119 16 -52 1/2 MA40215 120 16 -52 1/2 MA40268 120 36 -49 1/2 Notes: 1. Schottky barrier junction diodes are thermocompression bonded in case style 119 and 120. Case style 54 uses pressure contacts. The standard case style is given for each model number. Other case styles may be available. 2. The video amplifier bandwidth is 1 MHz and the nominal amplifier noise figure is 3 dB. DC Impedance is 10 k ohms. The DC bias is 20 µA. 3. RF Power = 30 dBm. The DC forward bias is +20 µA. 4. Measured at the indicated test frequency and at -30 dBm RF power. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Schottky Detector Diodes Schottky Detector Diodes Rev. V3 N Type Silicon Schottky Detector Diodes These low barrier packaged detector diodes are suitable got use in striping applications. They feature high sensitivity, and low l/f noise. These diodes are listed by increasing frequency, and grouped by package style and TSS. Case styles other than those specified may be available. For additional information, contact the factory. Video Impedance 2 Range Min./Max. (K Ohms) Model Number Case Style Test Frequency (GHz) Minimum1 Tang. Signal Sensitivity TSS (dBm) MA40261 186 3 -55 1/2 MA40143 213 3 -50 1/2 MA40108 137 10 -52 1/2 MA40070 137 10 -50 1/2 MA40264 186 10 -55 1/2 MA40147 213 10 -55 1/2 MA40207-276 276 10 -55 1/2 MA40215-276 276 16 -52 1/2 Packaged P Type Silicon Schottky Detector Diodes This series of low barrier P type detector diodes has good voltage sensitivity and low l/f noise than similar capacitance N type Schottky diodes. They are listed by case style. Specifications @ TA = +25°C Minimum1 Tang. Test Frequency Signal Sensitivity TSS (GHz) (dBm) Video Impedance 2 Range Min./Max. (Ohms) Minimum 2 Sensitivity (mV/mW) Model Number Case Style MA40252 54 10 -55 1.2/1.8 5000 MA40251 119 10 -55 1.2/1.8 5000 MA40257 120 10 -55 1.2/1.8 5000 MA40257-276 276 10 -55 1.2/1.8 5000 Notes: 1. The video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. The Input Impedance is 10 k Ohms and DC Bias is 20 µA. 2. Pinc = -30 dBm. The DC forward bias is +20 µA. 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Schottky Detector Diodes Schottky Detector Diodes Rev. V3 N Type Silicon Schottky Chip Detector Diodes These low barrier N type chip detector diodes are suitable for use in microstrip applications. They feature sensitivity, and low l/f noise. These diodes are listed by increasing frequency. Model Number Case Style Test Frequency (GHz) Nominal 1,5 TSS (dBm) Minimum Reverse Voltage VR (Volts) Nominal 3 Forward Voltage (Volts) Nominal 4 Total Capacitance (pF) MA40220 135 10.0 -52 2.0 0.3 0.12 MA40222 135 16.0 -52 2.0 0.3 0.09 P Type Silicon Schottky Chip Detector Diodes These low barrier P type chip detector diodes are suitable for use in microstrip or stripline circuits. These diodes are listed by increasing test frequency. Model Number Case Style Test Frequency (GHz) Nominal 1,5 TSS (dBm) Minimum Reverse Voltage VR (Volts) Nominal 3 Forward Voltage (Volts) Nominal 4 Total Capacitance (pF) MA40270 135A 10.0 -52 4.0 0.4 0.12 MA40272 135A 16.0 -52 4.0 0.4 0.09 Notes: 1. The video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. Impedance is 10 k Ohms and DC Bias is +20 µA. Wafers are evaluated on a sample basis for TSS. 2. Voltage rating is measured at 10 µA reverse bias current. 3. Forward voltage is measured at a forward current of 1 mA. 4. Capacitance is measured at 0 V and 1 MHz. 5. RF power = -30 dBm. The DC forward bias is +20 µA. Measured at the indicated test frequency and at -30 dBm RF power with RL = 10 k Ohms and DC forward bias +20 µA 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Schottky Detector Diodes Schottky Detector Diodes Rev. V3 Typical Performance Curves Nominal Output Voltage at X-Band (With Forward Bias) Nominal Output Voltage at X-Band (With Zero Bias) Nominal Tangential Signal Sensitivity vs. Frequency Nominal Tangential Signal Sensitivity vs. Bias Current at X-Band Nominal Video Impedance vs. Bias Current 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.