CY7C1480BV33 CY7C1482BV33 72-Mbit (2 M × 36/4 M × 18) Pipelined Sync SRAM 72-Mbit (2 M × 36/4 M × 18) Pipelined Sync SRAM Features Functional Description ■ Supports bus operation up to 250 MHz ■ Available speed grades are 250, 200, and 167 MHz ■ Registered inputs and outputs for pipelined operation ■ 3.3 V core power supply ■ 2.5 V/3.3 V I/O operation ■ Fast clock-to-output times ❐ 3.0 ns (for 250 MHz device) ■ Provide high performance 3-1-1-1 access rate ■ User selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences ■ Separate processor and controller address strobes ■ Synchronous self timed writes ■ Asynchronous output enable ■ Single cycle chip deselect ■ CY7C1480BV33 available in JEDEC-standard Pb-free 100-pin thin quad flat pack (TQFP), Pb-free and non Pb-free 165-ball fine-pitch ball grid array (FBGA) package. CY7C1482BV33 available in non Pb-free 165-ball fine-pitch ball grid array (FBGA) package ■ IEEE 1149.1 JTAG-compatible boundary scan ■ “ZZ” sleep mode option The CY7C1480BV33 and CY7C1482BV33 SRAM integrates 2 M × 36/4 M × 18 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. Addresses and chip enables are registered at the rising edge of the clock when either address strobe processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses may be internally generated as controlled by the advance pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate a self timed write cycle.This part supports byte write operations (see sections Pin Definitions on page 6 and Truth Table on page 9 for further details). Write cycles can be one to two or four bytes wide as controlled by the byte write control inputs. GW when active LOW causes all bytes to be written. The CY7C1480BV33 and CY7C1482BV33 operates from a +3.3 V core power supply while all outputs may operate with either a +2.5 or +3.3 V supply. All inputs and outputs are JEDEC standard JESD8-5 compatible. For best practices recommendations, refer to the Cypress application note AN1064 “SRAM System Guidelines”. Selection Guide Description 250 MHz 200 MHz 167 MHz Unit Maximum access time 3.0 3.0 3.4 ns Maximum operating current 500 500 450 mA Maximum CMOS standby current 120 120 120 mA Cypress Semiconductor Corporation Document Number: 001-15145 Rev. *H • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised May 25, 2012 CY7C1480BV33 CY7C1482BV33 Logic Block Diagram – CY7C1480BV33 A 0, A1, A ADDRESS REGISTER 2 A [1:0] MODE ADV CLK Q1 BURST COUNTER CLR AND LOGIC ADSC Q0 ADSP BW D DQ D ,DQP D BYTE WRITE REGISTER DQ D ,DQPD BYTE WRITE DRIVER BW C DQ C ,DQP C BYTE WRITE REGISTER DQ C ,DQP C BYTE WRITE DRIVER DQ B ,DQP B BYTE WRITE REGISTER DQ B ,DQP B BYTE WRITE DRIVER BW B BW A BWE ZZ SENSE AMPS OUTPUT REGISTERS OUTPUT BUFFERS E DQs DQP A DQP B DQP C DQP D DQ A ,DQP A BYTE WRITE DRIVER DQ A ,DQP A BYTE WRITE REGISTER GW CE 1 CE 2 CE 3 OE MEMORY ARRAY ENABLE REGISTER INPUT REGISTERS PIPELINED ENABLE SLEEP CONTROL Logic Block Diagram – CY7C1482BV33 A0, A1, A ADDRESS REGISTER 2 MODE A[1:0] BURST Q1 COUNTER AND LOGIC CLR Q0 ADV CLK ADSC ADSP BW B DQ B, DQP B WRITE DRIVER DQ B, DQP B WRITE REGISTER MEMORY ARRAY BW A DQ A, DQP A WRITE DRIVER DQ A, DQP A WRITE REGISTER SENSE AMPS OUTPUT REGISTERS OUTPUT BUFFERS DQs DQP A DQP B E BWE GW CE 1 CE2 CE3 ENABLE REGISTER PIPELINED ENABLE INPUT REGISTERS OE ZZ SLEEP CONTROL Document Number: 001-15145 Rev. *H Page 2 of 33 CY7C1480BV33 CY7C1482BV33 Contents Pin Configurations ........................................................... 4 Pin Definitions .................................................................. 6 Functional Overview ........................................................ 7 Single Read Accesses ................................................ 7 Single Write Accesses Initiated by ADSP ................... 7 Single Write Accesses Initiated by ADSC ................... 8 Burst Sequences ......................................................... 8 Sleep Mode ................................................................. 8 Interleaved Burst Address Table ................................. 8 Linear Burst Address Table ......................................... 8 ZZ Mode Electrical Characteristics .............................. 8 Truth Table ........................................................................ 9 Truth Table for Read/Write ............................................ 10 Truth Table for Read/Write ............................................ 10 IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 11 Disabling the JTAG Feature ...................................... 11 Test Access Port (TAP) ............................................. 11 PERFORMING A TAP RESET .................................. 11 TAP REGISTERS ...................................................... 11 TAP Instruction Set ................................................... 12 TAP Controller State Diagram ....................................... 13 TAP Controller Block Diagram ...................................... 14 3.3 V TAP AC Test Conditions ....................................... 15 3.3 V TAP AC Output Load Equivalent ......................... 15 2.5 V TAP AC Test Conditions ....................................... 15 2.5 V TAP AC Output Load Equivalent ......................... 15 TAP DC Electrical Characteristics and Operating Conditions ..................................................... 15 Document Number: 001-15145 Rev. *H TAP AC Switching Characteristics ............................... 16 TAP Timing ...................................................................... 16 Identification Register Definitions ................................ 17 Scan Register Sizes ....................................................... 17 Identification Codes ....................................................... 17 Boundary Scan Exit Order ............................................. 18 Boundary Scan Exit Order ............................................. 19 Maximum Ratings ........................................................... 20 Operating Range ............................................................. 20 Electrical Characteristics ............................................... 20 Capacitance .................................................................... 21 Thermal Resistance ........................................................ 21 AC Test Loads and Waveforms ..................................... 22 Switching Characteristics .............................................. 23 Switching Waveforms .................................................... 24 Ordering Information ...................................................... 28 Ordering Code Definitions ......................................... 28 Package Diagrams .......................................................... 29 Acronyms ........................................................................ 31 Document Conventions ................................................. 31 Units of Measure ....................................................... 31 Document History Page ................................................. 32 Sales, Solutions, and Legal Information ...................... 33 Worldwide Sales and Design Support ....................... 33 Products .................................................................... 33 PSoC Solutions ......................................................... 33 Page 3 of 33 CY7C1480BV33 CY7C1482BV33 Pin Configurations Figure 1. 100-pin TQFP (14 × 20 × 1.4 mm) pinout 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 CY7C1480BV33 (2 M × 36) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 DQPB DQB DQB VDDQ VSSQ DQB DQB DQB DQB VSSQ VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA DQA DQA VSSQ VDDQ DQA DQA DQPA Document Number: 001-15145 Rev. *H A A A A A A A A A MODE A A A A A1 A0 A A VSS VDD 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQPC DQC DQc VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD DQPD 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A A CE1 CE2 BWD BWC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A CY7C1480BV33 Page 4 of 33 CY7C1480BV33 CY7C1482BV33 Pin Configurations (continued) Figure 2. 165-ball FBGA (15 × 17 × 1.4 mm) Pinout CY7C1480BV33 (2 M × 36) 1 A B C D E F G H J K L M N P NC/288M R 2 A 3 4 5 6 7 8 9 10 11 CE1 BWC BWB CE3 BWE ADSC ADV A NC NC/144M A CE2 BWD BWA CLK GW A NC/576M NC DQC VDDQ VSS VSS VSS VSS VSS VSS VDDQ VDDQ VSS VDD OE VSS VDD ADSP DQPC DQC VDDQ NC/1G DQB DQPB DQB DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB DQC DQC NC DQD DQC VDDQ VDD VSS VSS VSS VDD DQB VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ VDDQ NC VDDQ DQB DQC NC DQD DQB NC DQA DQB ZZ DQA DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA DQD DQPD DQD NC VDDQ VDDQ VDD VSS VSS NC VSS A VSS NC VDD VSS VDDQ VDDQ DQA NC DQA DQPA NC A A A TDI A1 TDO A A A A MODE A A A TMS TCK A A A A A0 CY7C1482BV33 (4 M × 18) 1 2 A B C D E F G H J K L M N P NC/288M A NC/144M A NC NC R 3 4 5 CE1 CE2 BWB NC CE3 NC BWA NC DQB VDDQ VSS VDD VSS VDDQ 6 7 8 9 10 11 A A CLK BWE GW ADSC OE ADV ADSP VSS VSS VSS VSS VSS VDD VDDQ VSS VDDQ A NC/576M NC/1G DQPA DQA NC NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA NC NC DQB DQB NC NC VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ NC VDDQ NC NC DQA DQA ZZ NC DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC DQB DQPB NC NC VDDQ VDDQ VDD VSS VSS NC VSS A VSS NC VDD VSS VDDQ VDDQ DQA NC NC NC NC A A A TDI A1 TDO A A A A MODE A A A TMS A0 TCK A A A A Document Number: 001-15145 Rev. *H Page 5 of 33 CY7C1480BV33 CY7C1482BV33 Pin Definitions Pin Name I/O Description A0, A1, A InputAddress inputs used to select one of the address locations. Sampled at the rising edge of the CLK Synchronous if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A1:A0 are fed to the 2-bit counter. BWA,BWB, BWC,BWD InputByte write select inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM. Sampled Synchronous on the rising edge of CLK. GW InputGlobal write enable input, active LOW. When asserted LOW on the rising edge of CLK, a global write Synchronous is conducted (all bytes are written, regardless of the values on BWX and BWE). BWE InputByte write enable input, active LOW. Sampled on the rising edge of CLK. This signal must be asserted Synchronous LOW to conduct a byte write. CLK InputClock Clock input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW during a burst operation. CE1 InputChip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 Synchronous and CE3 to select or deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a new external address is loaded. CE2 InputChip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 Synchronous and CE3 to select or deselect the device. CE2 is sampled only when a new external address is loaded. CE3 InputChip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 Synchronous and CE2 to select or deselect the device. CE3 is sampled only when a new external address is loaded. OE InputOutput enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When LOW, Asynchronous the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. ADV InputAdvance input signal, sampled on the rising edge of CLK, active LOW. When asserted, it Synchronous automatically increments the address in a burst cycle. ADSP InputAddress strobe from processor, sampled on the rising edge of CLK, active LOW. When asserted Synchronous LOW, addresses presented to the device are captured in the address registers. A1:A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. ADSC InputAddress strobe from controller, sampled on the rising edge of CLK, active LOW. When asserted Synchronous LOW, addresses presented to the device are captured in the address registers. A1:A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ZZ InputZZ “Sleep” input, active HIGH. When asserted HIGH, places the device in a non-time-critical “sleep” Asynchronous condition with data integrity preserved. For normal operation, this pin must be LOW or left floating. ZZ pin has an internal pull-down. DQs, DQPs I/OBidirectional data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the Synchronous rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed in a tri-state condition. VDD Power Supply Power supply inputs to the core of the device. VSS VSSQ[1] VDDQ Ground Ground for the core of the device. I/O Ground Ground for the I/O circuitry. I/O power supply Power supply for the I/O circuitry. Note 1. Applicable for TQFP package. For BGA package VSS serves as ground for the core and the I/O circuitry. Document Number: 001-15145 Rev. *H Page 6 of 33 CY7C1480BV33 CY7C1482BV33 Pin Definitions (continued) Pin Name MODE I/O Description Input static Selects burst order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and must remain static during device operation. Mode Pin has an internal pull-up. TDO JTAG serial Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG feature is output not used, this pin must be disconnected. This pin is not available on TQFP packages. synchronous TDI JTAG serial Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not used, input this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. synchronous TMS JTAG serial Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not used, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. input synchronous TCK JTAG clock Clock input to the JTAG circuitry. If the JTAG feature is not used, this pin must be connected to VSS. This pin is not available on TQFP packages. NC – No connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are address expansion pins and are not internally connected to the die. Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 3.0 ns (250 MHz device). allowed to propagate through the output register and onto the data bus within 3.0 ns (250 MHz device) if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state; its outputs are always tri-stated during the first cycle of the access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single read cycles are supported. After the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output tri-states immediately. The CY7C1480BV33 and CY7C1482BV33 support secondary cache in systems using either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486 processors. The linear burst sequence is suited for processors that use a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses may be initiated with the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) CE1, CE2, CE3 are all asserted active. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The write signals (GW, BWE, and BWX) and ADV inputs are ignored during this first cycle. Byte Write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BWX) inputs. A Global Write Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry. ADSP triggered write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQs inputs is written into the corresponding address location in the memory array. If GW is HIGH, then the write operation is controlled by BWE and BWX signals. Three synchronous Chip Selects (CE1, CE2, and CE3) and an asynchronous Output Enable (OE) provide easy bank selection and output tri-state control. ADSP is ignored if CE1 is HIGH. The CY7C1480BV33 and CY7C1482BV33 provide byte write capability that is described in the section Truth Table for Read/Write on page 10. Asserting the Byte Write Enable input (BWE) with the selected Byte Write (BWX) input, selectively writes to only the desired bytes. Bytes not selected during a Byte Write operation remain unaltered. A synchronous self-timed Write mechanism is provided to simplify the Write operations. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) CE1, CE2, CE3 are all asserted active, and (3) the write signals (GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1 is HIGH. The address presented to the address inputs (A) is stored into the address advancement logic and the Address Register while being presented to the memory array. The corresponding data is allowed to propagate to the input of the Output Registers. At the rising edge of the next clock the data is Document Number: 001-15145 Rev. *H Single Write Accesses Initiated by ADSP Because the CY7C1480BV33 and CY7C1482BV33 are a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQs inputs. Doing so tri-states the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE. Page 7 of 33 CY7C1480BV33 CY7C1482BV33 Single Write Accesses Initiated by ADSC Sleep Mode ADSC Write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the appropriate combination of the Write inputs (GW, BWE, and BWX) are asserted active to conduct a Write to the desired byte. ADSC-triggered Write accesses require a single clock cycle to complete. The address presented to A is loaded into the address register and the address advancement logic when being delivered to the memory array. The ADV input is ignored during this cycle. If a global Write is conducted, the data presented to the DQs is written into the corresponding address location in the memory core. If a Byte Write is conducted, only the selected bytes are written. Bytes not selected during a Byte Write operation remain unaltered. A synchronous self-timed Write mechanism is provided to simplify the Write operations. The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. When in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid, and the completion of the operation is not guaranteed. The device must be deselected before entering the “sleep” mode. CE1, CE2, CE3, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Interleaved Burst Address Table (MODE = Floating or VDD) Because the CY7C1480BV33 and CY7C1482BV33 are a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQs inputs. Doing so tri-states the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a Write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1480BV33 and CY7C1482BV33 provide a 2-bit wraparound counter, fed by A1:A0, that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input. First Address A1:A0 Second Address A1:A0 Third Address A1:A0 Fourth Address A1:A0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 Fourth Address A1:A0 Linear Burst Address Table (MODE = GND) Asserting ADV LOW at clock rise automatically increments the burst counter to the next address in the burst sequence. Both Read and Write burst operations are supported. First Address A1:A0 Second Address A1:A0 Third Address A1:A0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 ZZ Mode Electrical Characteristics Min Max Unit IDDZZ Parameter Sleep mode standby current Description ZZ > VDD– 0.2 V – 120 mA tZZS Device operation to ZZ ZZ > VDD – 0.2 V – 2tCYC ns tZZREC ZZ recovery time ZZ < 0.2 V 2tCYC – ns tZZI ZZ Active to Sleep current This parameter is sampled – 2tCYC ns tRZZI ZZ Inactive to exit Sleep current This parameter is sampled 0 – ns Document Number: 001-15145 Rev. *H Test Conditions Page 8 of 33 CY7C1480BV33 CY7C1482BV33 Truth Table The truth table for CY7C1480BV33 and CY7C1482BV33 follows. [2, 3, 4, 5, 6] Operation Address Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK DQ Deselect cycle, power-down None H X X L X L X X X L–H Tri-state Deselect cycle, power-down None L L X L L X X X X L–H Tri-state Deselect cycle, power-down None L X H L L X X X X L–H Tri-state Deselect cycle, power-down None L L X L H L X X X L–H Tri-state Deselect cycle, power-down None L X H L H L X X X L–H Tri-state Sleep mode, power-down None X X X H X X X X X X Tri-state Q Read cycle, begin burst External L H L L L X X X L L–H Read cycle, begin burst External L H L L L X X X H L–H Tri-state Write cycle, begin burst External L H L L H L X L X L–H D Read cycle, begin burst External L H L L H L X H L L–H Q Read cycle, begin burst External L H L L H L X H H L–H Tri-state Read cycle, continue burst Next X X X L H H L H L L–H Read cycle, continue burst Next X X X L H H L H H L–H Tri-state Read cycle, continue burst Next H X X L X H L H L L–H Read cycle, continue burst Next H X X L X H L H H L–H Tri-state Write cycle, continue burst Next X X X L H H L L X L–H Write cycle, continue burst Next H X X L X H L L X L–H D Read cycle, suspend burst Current X X X L H H H H L L–H Q Read cycle, suspend burst Current X X X L H H H H H L–H Tri-state Read cycle, suspend burst Current H X X L X H H H L L–H Read cycle, suspend burst Current H X X L X H H H H L–H Tri-state Write cycle, suspend burst Current X X X L H H H L X L–H D Write cycle, suspend burst Current H X X L X H H L X L–H D Q Q D Q Notes 2. X = Do Not Care, H = Logic HIGH, L = Logic LOW. 3. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW = L. WRITE = H when all Byte write enable signals, BWE, GW = H. 4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH before the start of the write cycle to allow the outputs to tri-state. OE is a do not care for the remainder of the write cycle. 6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive or when the device is deselected, and all data bits behave as outputs when OE is active (LOW). Document Number: 001-15145 Rev. *H Page 9 of 33 CY7C1480BV33 CY7C1482BV33 Truth Table for Read/Write The read/write truth table for CY7C1480BV33 follows. [7] Function (CY7C1480BV33) GW BWE BWD BWC BWB BWA Read H H X X X X Read H L H H H H Write byte A – (DQA and DQPA) H L H H H L Write byte B – (DQB and DQPB) H L H H L H Write bytes B, A H L H H L L Write byte C – (DQC and DQPC) H L H L H H Write bytes C, A H L H L H L Write bytes C, B H L H L L H Write bytes C, B, A H L H L L L Write byte D – (DQD and DQPD) H L L H H H Write bytes D, A H L L H H L Write bytes D, B H L L H L H Write bytes D, B, A H L L H L L Write bytes D, C H L L L H H Write bytes D, C, A H L L L H L Write bytes D, C, B H L L L L H Write all bytes H L L L L L Write all bytes L X X X X X GW BWE Read H H X X Read H L H H Write byte A – (DQA and DQPA) H L H L Write byte B – (DQB and DQPB) H L L H Truth Table for Read/Write The read/write truth table for CY7C1482BV33 follows.[7] Function (CY7C1482BV33) BWB BWA Write bytes B, A H L L L Write all bytes H L L L Write all bytes L X X X Note 7. BWx represents any byte write signal BW[0..3].To enable any byte write BWx, a Logic LOW signal must be applied at clock rise. Any number of bye writes can be enabled at the same time for any write. Document Number: 001-15145 Rev. *H Page 10 of 33 CY7C1480BV33 CY7C1482BV33 IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1480BV33 and CY7C1482BV33 incorporate a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM. Note that the TAP controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC-standard 3.3 V or 2.5 V I/O logic levels. The CY7C1480BV33 and CY7C1482BV33 contain a TAP controller, instruction register, boundary scan register, bypass register, and ID register. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, tie TCK LOW (VSS) to prevent device clocking. TDI and TMS are internally pulled up and may be unconnected. They may alternatively be connected to VDD through a pull-up resistor. TDO must be left unconnected. At power-up, the device comes up in a reset state, which does not interfere with the operation of the device. The 0/1 next to each state represents the value of TMS at the rising edge of TCK. Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input gives commands to the TAP controller and is sampled on the rising edge of TCK. Leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI ball serially inputs information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information about loading the instruction register, see the TAP Controller State Diagram on page 13. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. Test Data-Out (TDO) The TDO output ball serially clocks data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. At power-up, the TAP is reset internally to ensure that TDO comes up in a High Z state. TAP Registers Registers are connected between the TDI and TDO balls and enable data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the TAP Controller Block Diagram on page 14. At power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state, as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to enable fault isolation of the board-level serial test data path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This enables data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The x36 configuration has a 73-bit-long register, and the x18 configuration has a 54-bit-long register. The boundary scan register is loaded with the contents of the RAM I/O ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the I/O ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the section Identification Register Definitions on page 17. Performing a TAP Reset Perform a RESET by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. Document Number: 001-15145 Rev. *H Page 11 of 33 CY7C1480BV33 CY7C1482BV33 TAP Instruction Set Overview Eight different instructions are possible with the three-bit instruction register. All combinations are listed in Identification Codes on page 17. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in detail in this section. The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller cannot be used to load address data or control signals into the SRAM and cannot preload the I/O buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/PRELOAD; rather, it performs a capture of the I/O ring when these instructions are executed. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. EXTEST EXTEST is a mandatory 1149.1 instruction, which must be executed whenever the instruction register is loaded with all zeros. EXTEST is not implemented in this SRAM TAP controller, and therefore this device is not compliant to 1149.1. The TAP controller does recognize an all-zero instruction. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. There is one difference between the two instructions. Unlike the SAMPLE/PRELOAD instruction, EXTEST places the SRAM outputs in a High Z state. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and enables the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register at power-up or whenever the TAP controller is in a test logic reset state. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO balls when the TAP Document Number: 001-15145 Rev. *H controller is in a Shift-DR state. It also places all SRAM outputs into a High Z state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the device TAP controller is not fully 1149.1 compliant. When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. Be aware that the TAP controller clock can only operate at a frequency up to 10 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output may undergo a transition. The TAP may then try to capture a signal when in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that may be captured. Repeatable results may not be possible. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time (tCS plus tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CLK captured in the boundary scan register. After the data is captured, the data is shifted out by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO balls. Note that because the PRELOAD part of the command is not implemented, putting the TAP to the Update-DR state when performing a SAMPLE/PRELOAD instruction has the same effect as the Pause-DR command. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. Page 12 of 33 CY7C1480BV33 CY7C1482BV33 TAP Controller State Diagram 1 TEST-LOGIC RESET 0 0 RUN-TEST/ IDLE 1 SELECT DR-SCA N 1 SELECT IR-SCAN 0 1 0 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 1 1 EXIT1-IR 0 0 PAUSE-IR 1 0 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-DR Document Number: 001-15145 Rev. *H 1 0 PAUSE-DR 1 0 1 EXIT1-DR 0 1 0 UPDATE-IR 1 0 Page 13 of 33 CY7C1480BV33 CY7C1482BV33 TAP Controller Block Diagram 0 Bypass Register 2 1 0 TDI Selection Circuitry Instruction Register Selection Circuitry TDO 31 30 29 . . . 2 1 0 Identification Register x . . . . . 2 1 0 Boundary Scan Register TCK TM S Document Number: 001-15145 Rev. *H TAP CONTROLLER Page 14 of 33 CY7C1480BV33 CY7C1482BV33 3.3 V TAP AC Test Conditions 2.5 V TAP AC Test Conditions Input pulse levels ...............................................VSS to 3.3 V Input pulse levels ............................................... VSS to 2.5 V Input rise and fall times ...................................................1 ns Input rise and fall time ....................................................1 ns Input timing reference levels ......................................... 1.5 V Input timing reference levels ....................................... 1.25 V Output reference levels ................................................ 1.5 V Output reference levels .............................................. 1.25 V Test load termination supply voltage ............................ 1.5 V Test load termination supply voltage .......................... 1.25 V 3.3 V TAP AC Output Load Equivalent 2.5 V TAP AC Output Load Equivalent 1.5V 1.25V 50Ω 50Ω TDO TDO Z O= 50Ω 20pF Z O= 50Ω 20pF TAP DC Electrical Characteristics and Operating Conditions (0 °C < TA < +70 °C; VDD = 3.135 to 3.6 V unless otherwise noted) Parameter [8] Min Max Unit VOH1 Output HIGH voltage Description IOH = –4.0 mA, VDDQ = 3.3 V Test Conditions 2.4 – V IOH = –1.0 mA, VDDQ = 2.5 V 2.0 – V VOH2 Output HIGH voltage IOH = –100 µA VDDQ = 3.3 V 2.9 – V VDDQ = 2.5 V 2.1 – V VOL1 Output LOW voltage IOL = 8.0 mA VDDQ = 3.3 V – 0.4 V IOL = 1.0 mA VDDQ = 2.5 V – 0.4 V VOL2 Output LOW voltage IOL = 100 µA VDDQ = 3.3 V – 0.2 V VDDQ = 2.5 V – 0.2 V VIH Input HIGH voltage VDDQ = 3.3 V 2.0 VDD + 0.3 V VDDQ = 2.5 V 1.7 VDD + 0.3 V VIL Input LOW voltage VDDQ = 3.3 V –0.3 0.8 V VDDQ = 2.5 V –0.3 0.7 V IX Input load current –5 5 µA GND < VIN < VDDQ Note 8. All voltages referenced to VSS (GND). Document Number: 001-15145 Rev. *H Page 15 of 33 CY7C1480BV33 CY7C1482BV33 TAP AC Switching Characteristics Over the Operating Range Parameter [9, 10] Description Min Max Unit 50 – ns Clock tTCYC TCK clock cycle time tTF TCK clock frequency – 20 MHz tTH TCK clock HIGH time 20 – ns tTL TCK clock LOW time 20 – ns tTDOV TCK clock LOW to TDO valid – 10 ns tTDOX TCK clock LOW to TDO invalid 0 – ns tTMSS TMS setup to TCK clock rise 5 – ns tTDIS TDI setup to TCK Clock rise 5 – ns tCS Capture setup to TCK rise 5 – ns tTMSH TMS hold after TCK clock rise 5 – ns tTDIH TDI hold after clock rise 5 – ns tCH Capture hold after clock rise 5 – ns Output Times Setup Times Hold Times TAP Timing Figure 3. TAP Timing 1 2 Test Clock (TCK ) 3 t TH t TM SS t TM SH t TDIS t TDIH t TL 4 5 6 t CY C Test M ode Select (TM S) Test Data-In (TDI) t TDOV t TDOX Test Data-Out (TDO) DON’T CA RE UNDEFINED Notes 9. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 10. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document Number: 001-15145 Rev. *H Page 16 of 33 CY7C1480BV33 CY7C1482BV33 Identification Register Definitions CY7C1480BV33 (2 M × 36) CY7C1482BV33 (4 M × 18) 000 000 01011 01011 Architecture/Memory type(23:18) 000000 000000 Defines memory type and architecture Bus width/density(17:12) 100100 010100 Defines width and density Cypress JEDEC ID Code (11:1) 00000110100 00000110100 Enables unique identification of SRAM vendor ID register presence indicator (0) 1 1 Indicates the presence of an ID register Instruction Field Revision number (31:29) Device depth (28:24) Description Describes the version number Reserved for internal use Scan Register Sizes Register Name Bit Size (× 36) Bit Size (× 18) Instruction 3 3 Bypass 1 1 ID 32 32 Boundary scan order – 165-ball FBGA 73 54 Identification Codes Instruction Code Description EXTEST 000 Captures the I/O ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. SAMPLE Z 010 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Document Number: 001-15145 Rev. *H Page 17 of 33 CY7C1480BV33 CY7C1482BV33 Boundary Scan Exit Order (2 M × 36) Bit # 165-ball ID Bit # 165-ball ID Bit # 165-ball ID Bit # 165-ball ID 1 C1 21 R3 2 D1 22 P2 41 L10 61 B8 42 K11 62 A7 3 E1 23 R4 43 J11 63 B7 4 D2 24 P6 44 K10 64 B6 5 E2 25 R6 45 J10 65 A6 6 F1 26 N6 46 H11 66 B5 7 G1 27 P11 47 G11 67 A5 8 F2 28 R8 48 F11 68 A4 9 G2 29 P3 49 E11 69 B4 10 J1 30 P4 50 D10 70 B3 11 K1 31 P8 51 D11 71 A3 12 L1 32 P9 52 C11 72 A2 13 J2 33 P10 53 G10 73 B2 14 M1 34 R9 54 F10 15 N1 35 R10 55 E10 16 K2 36 R11 56 A10 17 L2 37 N11 57 B10 18 M2 38 M11 58 A9 19 R1 39 L11 59 B9 20 R2 40 M10 60 A8 Document Number: 001-15145 Rev. *H Page 18 of 33 CY7C1480BV33 CY7C1482BV33 Boundary Scan Exit Order (4 M × 18) Bit # 165-ball ID Bit # 165-ball ID Bit # 165-ball ID 1 D2 19 R8 37 C11 2 E2 20 P3 38 A11 3 F2 21 P4 39 A10 4 G2 22 P8 40 B10 5 J1 23 P9 41 A9 6 K1 24 P10 42 B9 7 L1 25 R9 43 A8 8 M1 26 R10 44 B8 9 N1 27 R11 45 A7 10 R1 28 M10 46 B7 11 R2 29 L10 47 B6 12 R3 30 K10 48 A6 13 P2 31 J10 49 B5 14 R4 32 H11 50 A4 15 P6 33 G11 51 B3 16 R6 34 F11 52 A3 17 N6 35 E11 53 A2 18 P11 36 D11 54 B2 Document Number: 001-15145 Rev. *H Page 19 of 33 CY7C1480BV33 CY7C1482BV33 Maximum Ratings DC input voltage ................................. –0.5 V to VDD + 0.5 V Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Storage temperature ................................ –65 C to +150 C Ambient temperature with power applied .......................................... –55 C to +125 C Supply voltage on VDD relative to GND .......–0.3 V to +4.6 V Supply voltage on VDDQ relative to GND ...... –0.3 V to +VDD DC voltage applied to outputs in tri-state ..........................................–0.5 V to VDDQ + 0.5 V Current into outputs (LOW) ........................................ 20 mA Static discharge voltage (MIL-STD-883, Method 3015) ................................. > 2001 V Latch-up current .................................................... > 200 mA Operating Range Ambient Temperature Commercial 0 C to +70 C Industrial –40 C to +85 C Range VDD VDDQ 3.3 V– 5% / + 10% 2.5 V – 5% to VDD Electrical Characteristics Over the Operating Range Parameter [11, 12] Description VDD Power supply voltage VDDQ I/O supply voltage VOH VOL VIH VIL IX Output HIGH voltage Output LOW voltage Input HIGH voltage [11] IDD [13] ISB1 Min Max Unit 3.135 3.6 V For 3.3 V I/O 3.135 VDD V For 2.5 V I/O 2.375 2.625 V For 3.3 V I/O, IOH = –4.0 mA 2.4 – V For 2.5 V I/O, IOH = –1.0 mA 2.0 – V For 3.3 V I/O, IOL = 8.0 mA – 0.4 V For 2.5 V I/O, IOL = 1.0 mA – 0.4 V For 3.3 V I/O 2.0 VDD + 0.3 V For 2.5 V I/O 1.7 VDD + 0.3 V For 3.3 V I/O –0.3 0.8 V For 2.5 V I/O –0.3 0.7 V Input leakage current except ZZ GND VI VDDQ and MODE –5 5 A Input current of MODE –30 – A Input LOW voltage [11] Input current of ZZ IOZ Test Conditions Input = VSS Input = VDD – 5 A Input = VSS –5 – A Input = VDD – 30 A Output leakage current GND VI VDDQ, output disabled –5 5 A VDD operating supply current VDD = Max, IOUT = 0 mA, f = fMAX = 1/tCYC 4.0 ns cycle, 250 MHz – 500 mA 5.0 ns cycle, 200 MHz – 500 mA 6.0 ns cycle, 167 MHz – 450 mA 4.0 ns cycle, 250 MHz – 245 mA 5.0 ns cycle, 200 MHz – 245 mA 6.0 ns cycle, 167 MHz – 245 mA Automatic CE power-down current – TTL Inputs VDD = Max, device deselected, VIN VIH or VIN VIL, f = fMAX = 1/tCYC Notes 11. Overshoot: VIH(AC) < VDD + 1.5 V (Pulse width less than tCYC/2). Undershoot: VIL(AC) > –2 V (Pulse width less than tCYC/2). 12. Power-up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 13. The operation current is calculated with 50% read cycle and 50% write cycle. Document Number: 001-15145 Rev. *H Page 20 of 33 CY7C1480BV33 CY7C1482BV33 Electrical Characteristics (continued) Over the Operating Range Parameter [11, 12] Min Max Unit ISB2 Automatic CE power-down current – CMOS inputs Description VDD = Max, device deselected, All speeds VIN 0.3 V or VIN > VDDQ – 0.3 V, f=0 – 120 mA ISB3 Automatic CE power-down current – CMOS inputs VDD = Max, device deselected, 4.0 ns cycle, VIN 0.3 V or VIN > VDDQ – 0.3 V, 250 MHz f = fMAX = 1/tCYC 5.0 ns cycle, 200 MHz – 245 mA – 245 mA 6.0 ns cycle, 167 MHz – 245 mA All speeds – 135 mA Automatic CE power-down current – TTL inputs ISB4 Test Conditions VDD = Max, device deselected, VIN VIH or VIN VIL, f = 0 Capacitance Parameter [14] Description CADDRESS Address input capacitance Test Conditions TA = 25 C, f = 1 MHz, VDD = 3.3 V, VDDQ = 2.5 V 100-pin TQFP 165-ball FBGA Unit Max Max 6 6 pF CDATA Data input capacitance 5 5 pF CCTRL Control input capacitance 8 8 pF CCLK Clock input capacitance 6 6 pF CI/O I/O capacitance 5 5 pF Thermal Resistance Parameter [14] Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, according to EIA/JESD51. 100-pin TQFP 165-ball FBGA Unit Package Package 24.63 16.3 C/W 2.28 2.1 C/W Note 14. Tested initially and after any design or process change that may affect these parameters. Document Number: 001-15145 Rev. *H Page 21 of 33 CY7C1480BV33 CY7C1482BV33 AC Test Loads and Waveforms Figure 4. AC Test Loads and Waveforms 3.3 V I/O Test Load R = 317 3.3 V OUTPUT OUTPUT RL = 50 Z0 = 50 GND 5 pF R = 351 VL = 1.5 V INCLUDING JIG AND SCOPE (a) ALL INPUT PULSES VDDQ 10% 90% 10% 90% 1 ns 1 ns (c) (b) 2.5 V I/O Test Load R = 1667 2.5 V OUTPUT OUTPUT RL = 50 Z0 = 50 GND 5 pF R = 1538 VL = 1.25 V (a) Document Number: 001-15145 Rev. *H ALL INPUT PULSES VDDQ INCLUDING JIG AND SCOPE (b) 10% 90% 10% 90% 1 ns 1 ns (c) Page 22 of 33 CY7C1480BV33 CY7C1482BV33 Switching Characteristics Over the Operating Range Parameter [15, 16] tPOWER 250 MHz Description VDD(typical) to the first access [17] 200 MHz 167 MHz Unit Min Max Min Max Min Max 1 – 1 – 1 – ms Clock tCYC Clock cycle time 4.0 – 5.0 – 6.0 – ns tCH Clock HIGH 2.0 – 2.0 – 2.4 – ns tCL Clock LOW 2.0 – 2.0 – 2.4 – ns Output Times tCO Data output valid after CLK rise – 3.0 – 3.0 – 3.4 ns tDOH Data output hold after CLK rise 1.3 – 1.3 – 1.5 – ns 1.3 – 1.3 – 1.5 – ns tCLZ Clock to low Z [18, 19, 20] [18, 19, 20] tCHZ Clock to high Z tOEV OE LOW to output valid tOELZ OE LOW to output low Z [18, 19, 20] tOEHZ OE HIGH to output high Z [18, 19, 20] – 3.0 – 3.0 – 3.4 ns – 3.0 – 3.0 – 3.4 ns 0 – 0 – 0 – ns – 3.0 – 3.0 – 3.4 ns Setup Times tAS Address setup before CLK rise 1.4 – 1.4 – 1.5 – ns tADS ADSC, ADSP setup before CLK rise 1.4 – 1.4 – 1.5 – ns tADVS ADV setup before CLK rise 1.4 – 1.4 – 1.5 – ns tWES GW, BWE, BWX setup before CLK rise 1.4 – 1.4 – 1.5 – ns tDS Data input setup before CLK rise 1.4 – 1.4 – 1.5 – ns tCES Chip enable setup before CLK rise 1.4 – 1.4 – 1.5 – ns tAH Address hold after CLK rise 0.4 – 0.4 – 0.5 – ns tADH ADSP, ADSC hold after CLK rise 0.4 – 0.4 – 0.5 – ns Hold Times tADVH ADV hold after CLK rise 0.4 – 0.4 – 0.5 – ns tWEH GW, BWE, BWX hold after CLK rise 0.4 – 0.4 – 0.5 – ns tDH Data input hold after CLK rise 0.4 – 0.4 – 0.5 – ns tCEH Chip enable hold after CLK rise 0.4 – 0.4 – 0.5 – ns Notes 15. Timing reference level is 1.5 V when VDDQ = 3.3 V and is 1.25 V when VDDQ = 2.5 V. 16. Test conditions shown in (a) of Figure 4 on page 22 unless otherwise noted. 17. This part has an internal voltage regulator; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation can be initiated. 18. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of Figure 4 on page 22. Transition is measured ±200 mV from steady-state voltage. 19. At any supplied voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve high Z before low Z under the same system conditions. 20. This parameter is sampled and not 100% tested. Document Number: 001-15145 Rev. *H Page 23 of 33 CY7C1480BV33 CY7C1482BV33 Switching Waveforms Figure 3. Read Cycle Timing [21] t CYC CLK t t ADS CH t CL t ADH ADSP t ADS tADH ADSC t AS tAH A1 ADDRESS A2 t WES A3 Burst continued with new base address tWEH GW, BWE, BWx t CES Deselect cycle tCEH CE t ADVS tADVH ADV ADV suspends burst. OE t OEHZ t CLZ Data Out (Q) High-Z Q(A1) t OEV t CO t OELZ t DOH Q(A2) t CHZ Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) Q(A2 + 1) t CO Burst wraps around to its initial state Single READ BURST READ DON’T CARE UNDEFINED Note 21. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH, CE2 is LOW, or CE3 is HIGH. Document Number: 001-15145 Rev. *H Page 24 of 33 CY7C1480BV33 CY7C1482BV33 Switching Waveforms (continued) Figure 4. Write Cycle Timing [22, 23] t CYC CLK tCH t ADS tCL tADH ADSP t ADS ADSC extends burst tADH t ADS tADH ADSC t AS tAH A1 ADDRESS A2 A3 Byte write signals are ignored for first cycle when ADSP initiates burst t WES tWEH BWE, BW X t WES tWEH GW t CES tCEH CE t t ADVS ADVH ADV ADV suspends burst OE t DS Data In (D) High-Z t OEHZ tDH D(A1) D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) Data Out (Q) BURST READ Single WRITE BURST WRITE DON’T CARE Extended BURST WRITE UNDEFINED Notes 22. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH, CE2 is LOW, or CE3 is HIGH. 23. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW, and BWX LOW. Document Number: 001-15145 Rev. *H Page 25 of 33 CY7C1480BV33 CY7C1482BV33 Switching Waveforms (continued) Figure 5. Read/Write Cycle Timing [24, 25, 26] tCYC CLK tCL tCH t ADS tADH t AS tAH ADSP ADSC ADDRESS A1 A2 A3 A4 A5 A6 t WES tWEH BWE, BW X t CES tCEH CE ADV OE t DS tCO tDH t OELZ Data In (D) High-Z tOEHZ tCLZ Data Out (Q) High-Z Q(A1) D(A5) D(A3) Q(A4) Q(A2) Back-to-Back READs Single WRITE Q(A4+1) Q(A4+2) Q(A4+3) BURST READ DON’T CARE D(A6) Back-to-Back WRITEs UNDEFINED Notes 24. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH, CE2 is LOW, or CE3 is HIGH. 25. The data bus (Q) remains in high Z following a write cycle, unless a new read access is initiated by ADSP or ADSC. 26. GW is HIGH. Document Number: 001-15145 Rev. *H Page 26 of 33 CY7C1480BV33 CY7C1482BV33 Switching Waveforms (continued) Figure 6. ZZ Mode Timing [27, 28] CLK t ZZ ZZ I t ZZREC t ZZI SUPPLY I DDZZ t RZZI ALL INPUTS (except ZZ) Outputs (Q) DESELECT or READ Only High-Z DON’T CARE Notes 27. Device must be deselected when entering ZZ mode. See the section Truth Table on page 9 for all possible signal conditions to deselect the device. 28. DQs are in High Z when exiting ZZ sleep mode. Document Number: 001-15145 Rev. *H Page 27 of 33 CY7C1480BV33 CY7C1482BV33 Ordering Information Table 1 lists the key package features and ordering codes. The table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products. Table 1. Key Features and Ordering Informations Speed (MHz) 167 200 250 Ordering Code Package Diagram Part and Package Type Operating Range CY7C1480BV33-167BZXC 51-85165 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free Commercial CY7C1480BV33-167AXI 51-85050 100-pin TQFP (14 × 20 × 1.4 mm) Pb-free lndustrial Commercial CY7C1480BV33-200AXC 51-85050 100-pin TQFP (14 × 20 × 1.4 mm) Pb-free CY7C1482BV33-200BZI 51-85165 165-ball FBGA (15 × 17 × 1.4 mm) CY7C1480BV33-250BZXC 51-85165 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free CY7C1480BV33-250BZI 51-85165 165-ball FBGA (15 × 17 × 1.4 mm) lndustrial Commercial Industrial Ordering Code Definitions CY 7 C 148X B V33 - XXX XX X X Temperature Range: X = C or I C = Commercial; I = Industrial Pb-free Package Type: XX = BZ or A BZ = 165-ball FBGA A = 100-pin TQFP Frequency Range: XXX = 167 MHz or 200 MHz or 250 MHz V33 = 3.3 V Die Revision 148X = 1480 or 1482 1480 = SCD, 2 Mb × 36 (72 Mb) 1482 = SCD, 4 Mb × 18 (72 Mb) Technology Code: C = CMOS Marketing Code: 7 = SRAM Company ID: CY = Cypress Document Number: 001-15145 Rev. *H Page 28 of 33 CY7C1480BV33 CY7C1482BV33 Package Diagrams Figure 7. 100-pin TQFP (14 × 20 × 1.4 mm) A100RA Package Outline, 51-85050 51-85050 *D Document Number: 001-15145 Rev. *H Page 29 of 33 CY7C1480BV33 CY7C1482BV33 Package Diagrams (continued) Figure 8. 165-ball FBGA (15 × 17 × 1.4 mm) (0.45 Ball Diameter) Package Outline, 51-85165 51-85165 *D Document Number: 001-15145 Rev. *H Page 30 of 33 CY7C1480BV33 CY7C1482BV33 Acronyms Acronym Document Conventions Description Units of Measure BGA ball grid array CE chip enable °C degree Celsius CMOS complementary metal oxide semiconductor MHz megahertz EIA electronic industries alliance µA microampere FBGA fine-pitch ball grid array mA milliampere I/O input/output mm millimeter JEDEC joint electron devices engineering council ms millisecond JTAG joint test action group mV millivolt LSB least significant bit ns nanosecond MSB most significant bit ohm OE output enable % percent SRAM static random access memory pF picofarad TAP test access port V volt TCK test clock W watt TDI test data-in TDO test data-out TMS test mode select TQFP thin quad flat pack TTL transistor-transistor logic Document Number: 001-15145 Rev. *H Symbol Unit of Measure Page 31 of 33 CY7C1480BV33 CY7C1482BV33 Document History Page Document Title: CY7C1480BV33/CY7C1482BV33, 72-Mbit (2 M × 36/4 M × 18) Pipelined Sync SRAM Document Number: 001-15145 Revision ECN Orig. of Change Submission Date ** 1024385 VKN / KKVTMP See ECN New data sheet. *A 2183566 VKN / PYRS See ECN Changed status from Preliminary to Final. Updated Electrical Characteristics (Added Note 13 and referred the same note in IDD parameter). *B 2898663 NJY 03/24/2010 Updated Ordering Information (Removed inactive parts from Ordering Information table). Updated Package Diagrams. *C 2905654 VKN 06/04/2010 Updated Ordering Information (Removed inactive parts CY7C1480BV33-167AXC, CY7C1480BV33-200BZXI from the ordering information table). *D 3069168 NJY 10/23/10 *E 3207715 NJY 03/28/2011 Updated Ordering Information. Updated Package Diagrams. Updated in new template. *F 3298193 OSN 06/30/2011 Updated Package Diagrams (spec 51-85165 (Changed revision from *B to *C)). Added Acronyms and Units of Measure. Updated in new template and styles to meet current CY standards. *G 3423864 PRIT 10/27/2011 Updated Ordering Information. Updated Package Diagrams. *H 3628180 PRIT 05/25/2012 Updated Features (Removed 100-pin TQFP package related information (Corresponding to CY7C1482BV33), removed 209-ball FBGA package related information). Updated Functional Description (Removed CY7C1486BV33 related information). Removed Logic Block Diagram – CY7C1486BV33. Updated Pin Configurations (Removed 100-pin TQFP package related information (Corresponding to CY7C1482BV33), removed 209-ball FBGA package related information). Updated Pin Definitions. Updated Functional Overview (Removed CY7C1486BV33 related information). Updated Truth Table (Removed CY7C1486BV33 related information). Removed Truth Table for Read/Write (Corresponding to CY7C1486BV33). Updated IEEE 1149.1 Serial Boundary Scan (JTAG) (Removed CY7C1486BV33 related information). Updated Identification Register Definitions (Removed CY7C1486BV33 related information). Updated Scan Register Sizes (Removed “Bit Size (× 72)” column). Removed Boundary Scan Exit Order (Corresponding to CY7C1486BV33). Updated Capacitance (Removed 209-ball FBGA package related information). Updated Thermal Resistance (Removed 209-ball FBGA package related information). Updated Package Diagrams (Removed 209-ball FBGA package related information (spec 51-85167)). Document Number: 001-15145 Rev. *H Description of Change Updated Ordering Information (The part CY7C1482BV33-200BZXC is not available in Oracle PLM and therefore, it has been removed from the ordering information list) and added Ordering Code Definitions. Page 32 of 33 CY7C1480BV33 CY7C1482BV33 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2007-2012. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-15145 Rev. *H Revised May 25, 2012 Page 33 of 33 i486 is a trademark and Intel and Pentium are registered trademarks of Intel Corporation. All products and company names mentioned in this document may be the trademarks of their respective holders.