ELPIDA EDJ5304BASE-AC-E

PRELIMINARY DATA SHEET
512M bits DDR3 SDRAM
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EDJ5304BASE (128M words × 4 bits)
EDJ5308BASE (64M words × 8 bits)
EDJ5316BASE (32M words × 16 bits)
Features
• Density: 512M bits
• Organization
⎯ 16M words × 4 bits × 8 banks (EDJ5304BASE)
⎯ 8M words × 8 bits × 8 banks (EDJ5308BASE)
⎯ 4M words × 16 bits × 8 banks (EDJ5316BASE)
• Package
⎯ 78-ball FBGA (EDJ5304/5308BASE)
⎯ 96-ball FBGA (EDJ5316BASE)
⎯ Lead-free (RoHS compliant)
• Power supply: VDD, VDDQ = 1.5V ± 0.075V
• Data rate
⎯ 1333Mbps/1066Mbps/800Mbps (max.)
• 1KB page size (EDJ5304/5308BASE)
⎯ Row address: A0 to A12
⎯ Column address: A0 to A9, A11 (EDJ5304BASE)
A0 to A9 (EDJ5308BASE)
• 2KB page size (EDJ5316BASE)
⎯ Row address: A0 to A11
⎯ Column address: A0 to A9
• Eight internal banks for concurrent operation
• Interface: SSTL_15
• Burst lengths (BL): 8 and 4 with Burst Chop (BC)
• Burst type (BT):
⎯ Sequential (8, 4 with BC)
⎯ Interleave (8, 4 with BC)
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10
• /CAS Write Latency (CWL): 5, 6, 7, 8
• Precharge: auto precharge option for each burst
access
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
• Refresh: auto-refresh, self-refresh
• Double-data-rate architecture; two data transfers per
clock cycle
• The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
• DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for
better command and data bus efficiency
• On-Die Termination (ODT) for better signal quality
⎯ Synchronous ODT
⎯ Dynamic ODT
⎯ Asynchronous ODT
• Multi Purpose Register (MPR) for temperature read
out
• ZQ calibration for DQ drive and ODT
• Programmable Partial Array Self-Refresh (PASR)
• /RESET pin for Power-up sequence and reset
function
• SRT range:
⎯ Normal/extended
⎯ Auto/manual self-refresh
• Programmable Output driver impedance control
• Refresh cycles
⎯ Average refresh period
7.8μs at 0°C ≤ TC ≤ +85°C
3.9μs at +85°C < TC ≤ +95°C
• Operating case temperature range
⎯ TC = 0°C to +95°C
ct
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Pr
Specifications
Document No. E0966E60 (Ver. 6.0)
Date Published July 2007 (K) Japan
Printed in Japan
URL: http://www.elpida.com
This product became EOL in September, 2010.
©Elpida Memory, Inc. 2006-2007
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Ordering Information
Part number
A
Organization
(words × bits)
Internal
banks
128M × 4
JEDEC speed bin
(CL-tRCD-tRP)
Package
DDR3-1333G (8-8-8)
DDR3-1333H (9-9-9)
DDR3-1066E (6-6-6)
DDR3-1066F (7-7-7)
DDR3-1066G (8-8-8)
DDR3-800D (5-5-5)
DDR3-800E (6-6-6)
DDR3-1333G (8-8-8)
DDR3-1333H (9-9-9)
DDR3-1066E (6-6-6)
DDR3-1066F (7-7-7)
DDR3-1066G (8-8-8)
DDR3-800D (5-5-5)
DDR3-800E (6-6-6)
DDR3-1333G (8-8-8)
DDR3-1333H (9-9-9)
DDR3-1066E (6-6-6)
DDR3-1066F (7-7-7)
DDR3-1066G (8-8-8)
DDR3-800D (5-5-5)
DDR3-800E (6-6-6)
8
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EDJ5304BASE-DG-E
EDJ5304BASE-DJ-E
EDJ5304BASE-AC-E
EDJ5304BASE-AE-E
EDJ5304BASE-AG-E
EDJ5304BASE-8A-E
EDJ5304BASE-8C-E
EDJ5308BASE-DG-E
EDJ5308BASE-DJ-E
EDJ5308BASE-AC-E
EDJ5308BASE-AE-E
EDJ5308BASE-AG-E
EDJ5308BASE-8A-E
EDJ5308BASE-8C-E
EDJ5316BASE-DG-E
EDJ5316BASE-DJ-E
EDJ5316BASE-AC-E
EDJ5316BASE-AE-E
EDJ5316BASE-AG-E
EDJ5316BASE-8A-E
EDJ5316BASE-8C-E
Mask
version
64M × 8
32M × 16
78-ball FBGA
96-ball FBGA
Part Number
Pr
E D J 53 04 B A SE - DG - E
Elpida Memory
Product Family
J: DDR3
Density / Bank
53: 512M / 8-bank
Organization
04: x4
08: x8
16: x16
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Type
D: Monolithic Device
Environment code
E: Lead Free
(RoHS compliant)
Speed
DG: DDR3-1333G (8-8-8)
DJ: DDR3-1333H (9-9-9)
AC: DDR3-1066E (6-6-6)
AE: DDR3-1066F (7-7-7)
AG: DDR3-1066G (8-8-8)
8A: DDR3-800D (5-5-5)
8C: DDR3-800E (6-6-6)
Package
SE: FBGA
Power Supply, Interface
B: 1.5V, SSTL_15
Die Rev.
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
2
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Pin Configurations (×4, ×8 configuration)
/xxx indicates active low signal.
78-ball FBGA (×4 configuration)
2
1
78-ball FBGA (×8 configuration)
3
7
8
9
NC
NC
VSS
VDD
1
A
VDD
VSS
B
7
8
9
VDD
NC
NU/(/TDQS) VSS
VDD
B
VSS VSSQ
DQ0
DM
VSSQ VDDQ
VSS VSSQ
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C
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
NC
/DQS
VDD
VSS
VSSQ
NC
NC
NC
VSSQ
VSS
/RAS
CK
VSS
VDDQ
VDD
/CAS
/CK
VDD
/CS
A10(AP)
/WE
ZQ
BA0
BA2
NC
CKE
A3
A0
VSSQ
VSSQ
DQ6
/DQS
VDD
VSS
VSSQ
VREFDQ VDDQ
DQ4
DQ7
DQ5
VDDQ
NC
VSS
/RAS
CK
VSS
NC
ODT
VDD
/CAS
/CK
VDD
CKE
NC
/CS
/WE
A10(AP)
ZQ
NC
VSS
BA0
BA2
NC
VDD
A3
A0
VSS
A5
A2
A1
A4
VSS
A9
A11
A6
VDD
VSS /RESET NC
NC
A8
VSS
NC
J
VREFCA VSS
A12(/BC) BA1
DQ3
H
K
VDD
DQ1
G
J
VSS
DQS
NC
H
NC
DQ2
F
G
ODT
VDDQ
E
F
NC
DM/TDQS VSSQ VDDQ
D
E
VREFDQ VDDQ
DQ0
C
D
VREFCA VSS
K
VDD
L
A12(/BC) BA1
VDD
L
VSS
A5
A2
VDD
A7
A9
N
A1
A4
VSS
Pr
M
A11
A6
M
VDD
VDD
NC
A8
VSS
(Top view)
A0 to A12*
Function
3
BA0 to BA2*
3
DQ0 to DQ7
/RESET*
Bank select
VDD
Supply voltage for internal circuit
VSS
Ground for internal circuit
DQS, /DQS
Differential data strobe
TDQS, /TDQS
Termination data strobe
Chip select
/RAS, /CAS, /WE*
3
DM
Command input
Clock enable
Differential clock input
Write data mask
3
ODT control
3
Active low asynchronous reset
VDDQ
Supply voltage for DQ circuit
VSSQ
Ground for DQ circuit
VREFDQ
Reference voltage for DQ
VREFCA
Reference voltage
ZQ
Reference pin for ZQ calibration
NC*
1
NU*
2
ct
CK, /CK
3
Function
Address inputs
A10 (AP): Auto precharge
A12(/BC): Burst chop
Data input/output
3
Pin name
(Top view)
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Pin name
ODT*
A7
N
VSS /RESET NC
CKE*
3
A
VSS
/CS*
2
No connection
Not usable
Notes: 1. Not internally connected with die.
2. Don’t connect. Internally connected.
3. Input only pins (address, command, CKE, ODT and /RESET) do not supply termination.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
3
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Pin Configurations (×16 configuration)
/xxx indicates active low signal.
96-ball FBGA
1
2
3
7
8
9
A
VDDQ DQU5 DQU7
DQU4 VDDQ
VSS
VSSQ
/DQSU DQU6 VSSQ
B
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VDD
VSS
C
D
VDDQ DQU3 DQU1
DQSU DQU2 VDDQ
VSSQ VDDQ DMU
DQU0 VSSQ
VDD
E
VSS
VSSQ DQL0
DML
VSSQ VDDQ
F
VDDQ DQL2 DQSL
DQL1 DQL3 VSSQ
VSSQ DQL6 /DQSL
VDD
G
VSS
VSSQ
H
DQL7 DQL5 VDDQ
VREFDQ VDDQ DQL4
J
NC
VSS
/RAS
CK
VSS
NC
ODT
VDD
/CAS
/CK
VDD
CKE
K
Pr
L
NC
/CS
/WE
A10(AP)
VSS
BA0
BA2
NC
VDD
A3
A0
VSS
A5
A2
VDD
A7
ZQ
NC
M
VREFCA VSS
N
A12(/BC) BA1
VDD
P
A1
A4
VSS
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R
A9
A11
A6
VDD
VSS /RESET NC
NC
A8
VSS
T
(Top view)
Pin name
Function
A0 to A11*
A12(/BC) *
2
Address inputs
A10(AP): Auto precharge
2
Burst chop
BA0 to BA2
Bank select
/CS*
Data input/output
2
/RAS, /CAS, /WE*
CKE*
2
2
ODT*
2
/RESET*
Function
ODT control
2
Active low asynchronous reset
VDD
Supply voltage for internal circuit
VSS
Ground for internal circuit
Differential data strobe
VDDQ
Chip select
VSSQ
Command input
VREFDQ
ct
DQU0 to DQU7
DQL0 to DQL7
DQSU, /DQSU
DQSL, /DQSL
Pin name
Supply voltage for DQ circuit
Ground for DQ circuit
Reference voltage for DQ
Clock enable
VREFCA
CK, /CK
Differential clock input
ZQ
Reference voltage
Reference pin for ZQ calibration
DMU, DML
Write data mask
NC*
No connection
Note: 1. Not internally connected with die.
2. Input only pins (address, command, CKE, ODT and /RESET) do not supply termination.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
4
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
CONTENTS
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Specifications.................................................................................................................................................1
Features.........................................................................................................................................................1
Ordering Information......................................................................................................................................2
Part Number ..................................................................................................................................................2
Pin Configurations (×4, ×8 configuration) ......................................................................................................3
Pin Configurations (×16 configuration) ..........................................................................................................4
Electrical Conditions ......................................................................................................................................7
Absolute Maximum Ratings .......................................................................................................................... 7
Operating Temperature Condition ................................................................................................................ 7
Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................... 8
AC and DC Input Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)....................... 8
Differential Input Logic Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ..................................... 8
AC and DC Output Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) .................. 11
AC Overshoot/Undershoot Specification..................................................................................................... 13
Output Driver Impedance............................................................................................................................ 14
On-Die Termination (ODT) Levels and I-V Characteristics ......................................................................... 16
ODT Timing Definitions............................................................................................................................... 18
Pr
IDD Measurement Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................................... 22
Electrical Specifications...............................................................................................................................33
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................................................. 33
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................................................. 34
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Pin Capacitance (TC = 25°C, VDD, VDDQ = 1.5V ± 0.075V) ..................................................................... 34
Standard Speed Bins .................................................................................................................................. 35
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V, VSS, VSSQ = 0V)....................... 38
Block Diagram .............................................................................................................................................50
Pin Function.................................................................................................................................................51
Command Operation ...................................................................................................................................53
Command Truth Table ................................................................................................................................ 53
CKE Truth Table ......................................................................................................................................... 57
ct
Simplified State Diagram .............................................................................................................................58
RESET and Initialization Procedure ............................................................................................................59
Power-Up and Initialization Sequence ........................................................................................................ 59
Reset and Initialization with Stable Power .................................................................................................. 60
Programming the Mode Register.................................................................................................................61
Mode Register Set Command Cycle Time (tMRD) ..................................................................................... 61
MRS Command to Non-MRS Command Delay (tMOD) ............................................................................. 61
DDR3 SDRAM Mode Register 0 [MR0] ...................................................................................................... 62
DDR3 SDRAM Mode Register 1 [MR1] ...................................................................................................... 63
DDR3 SDRAM Mode Register 2 [MR2] ...................................................................................................... 64
Preliminary Data Sheet E0966E60 (Ver. 6.0)
5
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
DDR3 SDRAM Mode Register 3 [MR3] ...................................................................................................... 65
Burst Length (MR0) .................................................................................................................................... 66
Burst Type (MR0) ....................................................................................................................................... 66
DLL Enable (MR1) ...................................................................................................................................... 67
DLL Disable (MR1) ..................................................................................................................................... 67
Additive Latency (MR1)............................................................................................................................... 70
Write Leveling (MR1) .................................................................................................................................. 71
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TDQS, /TDQS function (MR1) .................................................................................................................... 74
Extended Temperature Usage (MR2) ......................................................................................................... 75
Multi Purpose Register (MR3)..................................................................................................................... 76
Operation of the DDR3 SDRAM ..................................................................................................................84
Read Timing Definition................................................................................................................................ 84
Read Operation .......................................................................................................................................... 86
Write Timing Definition................................................................................................................................ 92
Write Operation........................................................................................................................................... 93
Write Timing Violations ............................................................................................................................... 99
Write Data Mask ....................................................................................................................................... 100
Pr
Precharge ................................................................................................................................................. 101
Auto Precharge Operation ........................................................................................................................ 102
Auto-Refresh............................................................................................................................................. 103
Self-Refresh.............................................................................................................................................. 104
Power-Down Mode ................................................................................................................................... 105
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Input Clock Frequency Change during Precharge Power-Down............................................................... 112
On-Die Termination (ODT)........................................................................................................................ 113
ZQ Calibration........................................................................................................................................... 125
Package Drawing ......................................................................................................................................126
Recommended Soldering Conditions........................................................................................................128
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
6
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Electrical Conditions
• All voltages are referenced to VSS (GND)
• Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Symbol
Rating
Unit
Notes
Power supply voltage
VDD
−0.4 to +1.975
V
1, 3
Power supply voltage for output
VDDQ
−0.4 to +1.975
V
1, 3
Input voltage
VIN
−0.4 to +1.975
V
1
Output voltage
VOUT
−0.4 to +1.975
V
1
Reference voltage
VREFCA
−0.4 to 0.6 × VDD
V
3
Reference voltage for DQ
VREFDQ
−0.4 to 0.6 × VDDQ
V
3
Storage temperature
Tstg
−55 to +100
°C
1, 2
Power dissipation
PD
1.0
W
1
Short circuit output current
IOUT
50
mA
1
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Parameter
Caution
Pr
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be no greater than
0.6 × VDDQ, When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Parameter
Symbol
Operating case temperature
TC
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Operating Temperature Condition
Rating
Unit
Notes
0 to +95
°C
1, 2, 3
ct
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be
supported. During operation, the DRAM case temperature must be maintained between 0°C to +85°C
under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between +85°C
and +95°C case temperature. Full specifications are guaranteed in this range, but the following additional
conditions apply:
a)
Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to
3.9μs. (This double refresh requirement may not apply for some devices.)
b)
If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to
either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 bit
[A6, A7] = [0, 1]) or enable the optional Auto Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]).
Preliminary Data Sheet E0966E60 (Ver. 6.0)
7
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD
1.425
1.5
1.575
V
1, 2
Supply voltage for DQ
VDDQ
1.425
1.5
1.575
V
1, 2
Input reference voltage
VREFCA (DC)
0.49 × VDDQ
0.50 × VDDQ 0.51 × VDDQ
V
3, 4
Input reference voltage for DQ
VREFDQ (DC)
0.49 × VDDQ
0.50 × VDDQ 0.51 × VDDQ
V
3, 4
Termination voltage
VTT
VDDQ/2 – TBD
TBD
V
VDDQ/2 + TBD
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Notes: 1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ±1% VDD (for
reference: approx ±15 mV).
4. For reference: approx. VDD/2 ± 15 mV.
AC and DC Input Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
DC input logic high
VIH (DC)
VREF + 0.1
⎯
TBD
V
1
DC input logic low
VIL (DC)
TBD
⎯
VREF – 0.1
V
1
AC input logic high
VIH (AC)
VREF + 0.175
⎯
⎯
V
1, 2
AC input logic low
VIL (AC)
⎯
⎯
VREF – 0.175
V
1, 2
⎯
V
–0.200
V
Differential input logic high
VIHdiff
+0.200
⎯
Differential input logic low
VILdiff
⎯
⎯
Pr
Notes: 1 For DQ and DM: VREF = VREFDQ. For input only pins except /RESET; VREF = VREFCA
2. See Overshoot and Undershoot Specifications section.
Differential Input Logic Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
AC differential input voltage
Symbol
min.
max.
Unit
VID (AC)
TBD
VDDQ + 0.6
V
Note
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od
Differential input cross point voltage
relative to VDD/2
VIX
AC differential cross point voltage
VOX (AC)
− 150
150
mV
TBD
TBD
V
1
Note: 1. To guarantee tight setup and hold times as well as output skew parameters with respect to clock and
strobe, each cross point voltage of differential input signals (CK, /CK and DQS, /DQS) must meet the
requirements in table above.
The differential input cross point voltage VIX is measured from the actual cross point of true and
complement signal to the midlevel between of VDD and VSS.
VDD
CK, DQS
VDD/2
ct
VIX
VIX
VIX
/CK, /DQS
VSS
VIX Definition
Preliminary Data Sheet E0966E60 (Ver. 6.0)
8
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Input Slew Rate Definitions
Setup (tIS and tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of
VREF and the first crossing of VIH (AC) min. Setup (tIS and tDS) nominal slew rate for a falling signal is defined as
the slew rate between the last crossing of VREF and the first crossing of VIL (AC) max.
Hold (tIH, tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL (DC)
max and the first crossing of VREF. Hold (tIH and tDH) nominal slew rate for a falling signal is defined as the slew
rate between the last crossing of VIH (DC) min and the first crossing of VREF.
[Single-ended Input Slew Rate Definition]
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Measured
Description
From
To
Defined by
Input slew rate for rising edge
VREF
VIH (AC) (min.)
Input slew rate for falling edge
VREF
VIL (AC) (max.)
Input slew rate for rising edge
VIL (DC) (max.) VREF
Input slew rate for falling edge
VIH (DC) (min.)
VREF
Applicable for
VIH (AC) (min.) – VREF
ΔTRS
VREF – VIL (AC) (max.)
ΔTFS
VREF – VIL (DC) (max.)
ΔTRH
VIH (DC) (min.) – VREF
ΔTFH
Setup (tIS, tDS)
Hold (tIH, tDH)
Note: This nominal slew rate applies for linear signal waveforms.
Setup
VDDQ
Pr
VIH (AC) min.
VIH (DC) min.
VREF
VIL (DC) max.
VIL (AC) max.
Falling slew =
VREF − VIL (AC) max.
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VSSQ
ΔTFS
ΔTRS
Rising slew =
Hold
ΔTFS
VIH (AC) min. − VREF
ΔTRS
VDDQ
VIH (AC) min.
VIH (DC) min.
VREF
VIL (DC) max.
VIL (AC) max.
ΔTFH
ΔTRH
Falling slew =
Rising slew =
Input Nominal Slew Rate Definition for Single-Ended Signals
Preliminary Data Sheet E0966E60 (Ver. 6.0)
9
VIL (DC) max. − VREF
ct
VSSQ
ΔTFH
VREF − VIL (DC) max.
ΔTRH
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
[Differential Input Slew Rate Definition]
Measured
Description
Differential input slew rate for
rising edge
(CK - /CK and DQS - /DQS)
Differential input slew rate for
falling edge
(CK - /CK and DQS - /DQS)
From
To
Defined by
Applicable for
VILdiff (max.)
VIHdiff (min.)
VIHdiff (min.) – VILdiff (max.)
ΔTRdiff
VIHdiff (min.)
VILdiff (max.)
VIHdiff (min.). – VILdiff max.
ΔTFdiff
Note
L
EO
Note: The differential signal (i.e. CK, /CK and DQS, /DQS) must be linear between these thresholds.
VIHdiff(min.)
0
VILdiff (max.)
ΔTRdiff
ΔTFdiff
Falling slew =
VIHdiff (min.) − VILdiff (max.)
Rising slew =
ΔTFdiff
VIHdiff (min.) − VILdiff (max.)
ΔTRdiff
Pr
Differential Input Slew Rate Definition for DQS, /DQS and CK, /CK
ct
u
od
Preliminary Data Sheet E0966E60 (Ver. 6.0)
10
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
AC and DC Output Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
Specification
Unit
Notes
V
VOH (DC)
0.8 × VDDQ
VOM (DC)
0.5 × VDDQ
VOL (DC)
0.2 × VDDQ
VOH (AC)
VTT + 0.1 × VDDQ
V
1
VOL (AC)
VTT − 0.1 × VDDQ
V
1
VOHdiff
0.2 × VDDQ
V
2
VOLdiff
−0.2 × VDDQ
V
2
L
EO
DC output high measurement level
(for IV curve linearity)
DC output middle measurement level
(for IV curve linearity)
DC output low measurement level
(for IV curve linearity)
AC output high measurement level
(for output slew rate)
AC output low measurement level
(for output slew rate)
AC differential output high measurement
level (for output slew rate)
AC differential output low measurement
level (for output slew rate)
Notes: 1. The swing of ±0.1 × VDDQ is based on approximately
swing with a driver impedance of 34Ω and an effective
differential outputs.
2. The swing of ±0.2 × VDDQ is based on approximately
swing with a driver impedance of 34Ω and an effective
differential outputs.
V
V
50% of the static single-ended output high or low
test load of 25Ω to VTT = VDDQ/2 at each of the
50% of the static single-ended output high or low
test load of 25Ω to VTT = VDDQ/2 at each of the
Output Slew Rate Definitions
Pr
[Single-Ended Output Slew Rate Definition]
Measured
Description
From
To
Output slew rate for rising edge VOL (AC)
VOH (AC)
Output slew rate for falling edge VOH (AC)
VOL (AC)
Defined by
u
od
VOH (AC) – VOL (AC)
ΔTRse
VOH (AC) – VOL (AC)
ΔTFse
VOH (AC)
VTT
VOL (AC)
ΔTFse
VOH (AC) − VOL (AC)
Rising slew =
ΔTFse
ct
Falling slew =
ΔTRse
VOH (AC) − VOL (AC)
ΔTRse
Input Slew Rate Definition for Single-Ended Signals
Preliminary Data Sheet E0966E60 (Ver. 6.0)
11
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
[Differential Output Slew Rate Definition]
Measured
Description
From
To
Differential output slew rate for
rising edge
Defined by
VOLdiff (AC)
VOHdiff (AC)
Differential output slew rate for
falling edge
VOHdiff (AC)
VOLdiff (AC)
VOHdiff(AC) – VOLdiff (AC)
ΔTRdiff
VOHdiff (AC) – VOLdiff (AC)
ΔTFdiff
L
EO
VOHdiff (AC)
0
VOLdiff (AC)
ΔTRdiff
ΔTFdiff
Falling slew =
VOHdiff (AC) − VOLdiff (AC)
Rising slew =
ΔTFdiff
VOHdiff (AC) − VOLdiff (AC)
ΔTRdiff
Differential Input Slew Rate Definition for DQS, /DQS and CK, /CK
Output Slew Rate (RON = RZQ/7 setting)
Parameter
Symbol
Speed
min.
max.
Pr
Output slew rate
(Single-ended)
SRQse
Output slew rate
(Differential)
SRQdiff
DDR3-800
DDR3-1066
DDR3-1333
DDR3-800
DDR3-1066
DDR3-1333
Unit
2.5
5
V/ns
5
10
V/ns
Notes
Remark: SR = slew rate. se = single-ended signals. diff = differential signals. Q = Query output
u
od
Reference Load for AC Timing and Output Slew Rate
Measurement point
DQ
VTT = 0.5 × VDDQ
RT =25Ω
Reference Output Load
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
12
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
AC Overshoot/Undershoot Specification
Parameter
Pins
Specification
Maximum peak amplitude allowed for overshoot
Command, Address,
CKE, ODT
0.4V
Maximum peak amplitude allowed for undershoot
0.4V
Maximum overshoot area above VDD
DDR3-1333
0.4V-ns
0.5V-ns
DDR3-800
0.67V-ns
L
EO
DDR3-1066
Maximum undershoot area below VSS
DDR3-1333
0.4V-ns
DDR3-1066
0.5V-ns
DDR3-800
0.67V-ns
Maximum peak amplitude allowed for overshoot
CK, /CK
0.4V
Maximum peak amplitude allowed for undershoot
0.4V
Maximum overshoot area above VDD
DDR3-1333
0.15V-ns
DDR3-1066
0.19 V-ns
DDR3-800
0.25V-ns
Maximum undershoot area below VSS
DDR3-1333
0.15V-ns
0.19 V-ns
DDR3-800
0.25V-ns
Pr
DDR3-1066
Maximum peak amplitude allowed for overshoot
DQ, DQS, /DQS, DM
0.4V
Maximum peak amplitude allowed for undershoot
0.4V
Maximum overshoot area above VDDQ
DDR3-1333
0.15V-ns
DDR3-1066
Maximum undershoot area below VSSQ
DDR3-1333
0.19 V-ns
0.25V-ns
u
od
DDR3-800
0.15V-ns
DDR3-1066
0.19 V-ns
DDR3-800
0.25V-ns
Maximum amplitude
Overshoot area
Volts (V)
VDD, VDDQ
VSS, VSSQ
Undershoot area
Preliminary Data Sheet E0966E60 (Ver. 6.0)
13
ct
Time (ns)
Overshoot/Undershoot Definition
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Output Driver Impedance
Assuming RZQ will be 240Ω (nom), DDR3 SDRAM data output driver impedance will be RON = RZQ/7 (nom.)
RON will be achieved by the DDR3 SDRAM after proper I/O calibration. Tolerance and linearity requirements are
referred to the Output Driver DC Electrical Characteristics table.
L
EO
A functional representation of the output buffer is shown in the figure Output Driver: Definition of Voltages and
Currents.
RON is defined by the value of the external reference resistor RZQ as follows:
• RON40 = RZQ / 6
• RON34 = RZQ / 7
The individual pull-up and pull-down resistors (RONPu and RONPd) are defined as follows:
Parameter
Symbol
Output driver pull-up impedance
RONPu
Output driver pull-down impedance
RONPd
Definition
Conditions
VDDQ − VOUT
⏐IOUT⏐
VOUT
⏐IOUT⏐
RONPd is turned off
RONPu is turned off
Chip in Drive Mode
Output Driver
IPu
RONPu
Pr
To
other
circuitry
like
RCV,
...
VDDQ
DQ
IOut
RONPd
VOut
IPd
VSSQ
ct
u
od
Output Driver: Definition of Voltages and Currents
Preliminary Data Sheet E0966E60 (Ver. 6.0)
14
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Output Driver DC Electrical Characteristics
(RZQ = 240Ω, entire operating temperature range; after proper ZQ calibration)
RONnom Resistor
40Ω
RON40Pd
RON40Pu
L
EO
34Ω
RON34Pd
RON34Pu
Mismatch between pull-up and pull down, MMPuPd
VOUT
min.
nom.
max.
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
0.9
0.9
0.6
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
1.1
1.1
1.4
1.4
1.1
1.1
VOM (DC)
−10
10
Unit
Notes
RZQ/6
1, 2, 3
RZQ/6
1, 2, 3
RZQ/7
1, 2, 3
RZQ/7
1, 2, 3
%
1, 2, 4
Pr
Notes: 1. The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following
section on voltage and temperature sensitivity.
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.
3. Pull-down and pull-up output driver impedances are recommended to be calibrated at 0.5 × VDDQ. Other
calibration schemes may be used to achieve the linearity spec shown above, e.g. calibration at 0.2 ×
VDDQ and 0.8 × VDDQ.
4. Measurement definition for mismatch between pull-up and pull-down, MMPuPd:
Measure RONPu and RONPd, both at 0.5 × VDDQ:
MMPuPd =
RONPu - RONPd
× 100
RONnom
u
od
Output Driver Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the table Output Driver
Sensitivity Definition and Output Driver Voltage and Temperature Sensitivity.
ΔT = T − T (@calibration); ΔV= VDDQ − VDDQ (@calibration); VDD = VDDQ
Note: dRONdT and dRONdV are not subject to production test but are verified by design and characterization.
[Output Driver Sensitivity Definition]
min
[email protected] (DC)
0.6 − dRONdTH × |ΔT| − dRONdVH × |ΔV|
max
unit
1.1 + dRONdTH × |ΔT| + dRONdVH × |ΔV|
RZQ/7
RON@ VOM (DC)
0.9 − dRONdTM × |ΔT| − dRONdVM × |ΔV|
1.1 + dRONdTM × |ΔT| + dRONdVM × |ΔV|
RZQ/7
[email protected] (DC)
0.6 − dRONdTL × |ΔT| − dRONdVL × |ΔV|
1.1 + dRONdTL × |ΔT| + dRONdVL × |ΔV|
RZQ/7
min.
max.
dRONdTM
0
1.5
dRONdVM
0
0.15
ct
[Output Driver Voltage and Temperature Sensitivity]
Unit
%/°C
%/mV
dRONdTL
0
1.5
dRONdVL
0
TBD
%/mV
dRONdTH
0
1.5
%/°C
dRONdVH
0
TBD
%/mV
Preliminary Data Sheet E0966E60 (Ver. 6.0)
15
%/°C
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
On-Die Termination (ODT) Levels and I-V Characteristics
On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of the MR1 Register.
ODT is applied to the DQ, DM, DQS, /DQS and TDQS, /TDQS (×8 devices only) pins.
A functional representation of the on-die termination is shown in the figure On-Die Termination: Definition of Voltages
and Currents.
The individual pull-up and pull-down resistors (RTTPu and RTTPd) are defined as follows:
Parameter
Symbol
Definition
L
EO
ODT pull-up resistance
RTTPu
ODT pull-down resistance
RTTPd
Conditions
VDDQ − VOUT
⏐IOUT⏐
VOUT
⏐IOUT⏐
RTTPd is turned off
RTTPu is turned off
Chip in Termination Mode
To
other
circuitry
like
RCV,
...
ODT
VDDQ
IPu
IOut = IPd - IPu
RTTPu
DQ
IOut
RTTPd
VOut
IPd
Pr
VSSQ
On-Die Termination: Definition of Voltages and Currents
u
od
Assuming RZQ will be 240Ω (nom), the value of the termination resistor can be set via MRS command to RTT60 =
RZQ/4 (nom) or RTT120 = RZQ/2 (nom).
RTT60 or RTT120 will be achieved by the DDR3 SDRAM after proper IO calibration has been performed.
Tolerances requirements are referred to the ODT DC Electrical Characteristics table.
Measurement Definition for RTT
Apply VIH (AC) to pin under test and measure current I(VIH(AC)), then apply VIL(AC) to pin under test and measure
current I(VIL(AC)) respectively.
RTT =
VIH( AC) − VIL( AC)
I( VIH( AC)) − I( VIL( AC))
Measurement Definition for ΔVM
Measure voltage (VM) at test pin (midpoint) with no load.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
16
ct
⎛ 2 × VM ⎞
ΔVM = ⎜⎜
- 1⎟⎟ × 100
⎝ VDDQ ⎠
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
ODT DC Electrical Characteristics
(RZQ = 240Ω, entire operating temperature range; after proper ZQ calibration)
MR1
[A9, A6, A2] RTT
Resistor
VOUT
min.
nom.
max.
Unit
Notes
[0, 1, 0]
RTT120Pd240
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
1.0
1.0
1.0
1.1
1.1
1.4
RZQ
1, 2, 3, 4
RTT120Pu240
VOL (DC)
VOM (DC)
VOH (DC)
0.9
0.9
0.6
1.0
1.0
1.0
1.4
1.1
1.1
RZQ
1, 2, 3, 4
RZQ/2 1, 2, 5
120Ω
L
EO
RTT120
[0, 0, 1]
60Ω
RTT60Pd120
RTT60Pu120
RTT60
[0, 1.1]
40Ω
RTT40Pd80
RTT40Pu80
[1, 0, 1]
30Ω
RTT30Pd60
RTT30Pu60
20Ω
1.0
1.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
VIL (AC) to VIH (AC)
0.9
1.0
1.6
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
RTT20Pd40
RTT20Pu40
RTT20
VIL (AC) to VIH (AC)
0.9
1.0
1.6
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
VIL (AC) to VIH (AC)
0.9
1.0
1.6
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
0.9
1.0
VIL (AC) to VIH (AC)
Deviation of VM w.r.t. VDDQ/2, ΔVM
RZQ/2 1, 2, 3, 4
RZQ/2 1, 2, 3, 4
RZQ/4 1, 2, 5
RZQ/3 1, 2, 3, 4
RZQ/3 1, 2, 3, 4
RZQ/6 1, 2, 5
RZQ/4 1, 2, 3, 4
RZQ/4 1, 2, 3, 4
u
od
RTT30
[1, 0, 0]
0.9
0.6
0.9
0.9
0.9
0.9
0.6
Pr
RTT40
VIL (AC) to VIH (AC)
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
−5
RZQ/8 1, 2, 5
RZQ/6 1, 2, 3, 4
RZQ/6 1, 2, 3, 4
1.6
RZQ/12 1, 2, 5
5
%
1, 2, 5, 6
ct
Notes: 1. The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following
section on voltage and temperature sensitivity.
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.
3. Pull-down and pull-up output resistors are recommended to be calibrated at 0.5 × VDDQ. Other calibration
schemes may be used to achieve the linearity spec shown above, e.g. calibration at 0.2 × VDDQ and 0.8
× VDDQ.
4. Not a specification requirement, but a design guide line.
5. Measurement Definition for RTT:
Apply VIH (AC) to pin under test and measure current I(VIH(AC)), then apply VIL(AC) to pin under test
and measure current I(VIL(AC)) respectively.
RTT =
VIH( AC) − VIL( AC)
I( VIH( AC)) − I( VIL( AC))
Preliminary Data Sheet E0966E60 (Ver. 6.0)
17
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
6. Measurement Definition for VM and ΔVM:
Measure voltage (VM) at test pin (midpoint) with no load:
⎛ 2 × VM ⎞
ΔVM = ⎜⎜
- 1⎟⎟ × 100
⎝ VDDQ ⎠
ODT Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the table ODT
Sensitivity Definition and ODT Voltage and Temperature Sensitivity.
ΔT = T − T (@calibration); ΔV= VDDQ − VDDQ (@calibration); VDD = VDDQ
L
EO
Note: dRTTdT and dRTTdV are not subject to production test but are verified by design and characterization.
[ODT Sensitivity Definition]
RTT
min.
max.
Unit
0.9 − dRTTdT × |ΔT| - dRTTdV × |ΔV|
1.6 + dRTTdT×|ΔT| + dRTTdV × |ΔV|
RZQ/2, 4, 6, 8, 12
[ODT Voltage and Temperature Sensitivity]
min.
max.
Unit
dRTTdT
0
1.5
%/°C
dRTTdV
0
0.15
%/mV
ODT Timing Definitions
Pr
Test Load for ODT Timings
Different than for timing measurements, the reference load for ODT timings are defined in ODT Timing Reference
Load.
DUT
CK, /CK
u
od
VDDQ
DQ, DM
DQS, /DQS
TDQS, /TDQS
RTT
= 25 Ω
VTT =
VSSQ
VSSQ
Timing Reference Points
Preliminary Data Sheet E0966E60 (Ver. 6.0)
18
ct
ODT Timing Reference Load
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
ODT Measurement Definitions
Definitions for tAON, tAONPD, tAOF, tAOFPD and tADC are provided in the following table and subsequent figures.
Symbol
tAON
tAONPD
tAOF
Begin Point Definition
Rising edge of CK - /CK defined by the end
point of ODTLon
Rising edge of CK - /CK with ODT being first
registered high
Rising edge of CK - /CK defined by the end
point of ODTLoff
Rising edge of CK - /CK with ODT being first
registered low
Rising edge of CK - /CK defined by the end
point of ODTLcnw, ODTLcwn4 or ODTLcwn8
tADC
Figure
Extrapolated point at VSSQ
Figure a)
Extrapolated point at VSSQ
Figure b)
End point: Extrapolated point at VRTT_Nom Figure c)
L
EO
tAOFPD
End Point Definition
End point: Extrapolated point at VRTT_Nom Figure d)
End point: Extrapolated point at VRTT_WR
and VRTT_Nom respectively
Figure e)
Reference Settings for ODT Timing Measurements
Measurement reference settings are provided in the following Table.
Measured Parameter
RTT_Nom Setting
RTT_WR Setting
VSW1 [V]
VSW2 [V]
tAON
RZQ/4
N/A
0.05
0.10
RZQ/12
N/A
0.10
0.20
tAONPD
tAOFPD
tADC
N/A
0.05
0.10
N/A
0.10
0.20
RZQ/4
Pr
tAOF
RZQ/4
RZQ/12
N/A
0.05
0.10
RZQ/12
N/A
0.10
0.20
RZQ/4
N/A
0.05
0.10
RZQ/12
N/A
0.10
0.20
RZQ/12
RZQ/2
0.20
0.30
Note
u
od
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLon
CK
VTT
/CK
tAON
tSW2
tSW1
VSW2
VSSQ
VSW1
ct
DQ, DM
DQS, /DQS
TDQS, /TDQS
VSSQ
End point: Extrapolated point at VSSQ
a) Definition of tAON
Preliminary Data Sheet E0966E60 (Ver. 6.0)
19
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Begin point: Rising edge of CK - /CK with
ODT being first registered high
CK
VTT
/CK
tAONPD
L
EO
DQ, DM
DQS, /DQS
TDQS, /TDQS
tSW2
tSW1
VSW2
VSW1
VSSQ
VSSQ
End point: Extrapolated point at VSSQ
b) Definition of tAONPD
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLoff
CK
Pr
/CK
VTT
tAOF
VRTT_Nom
End point: Extrapolated point at VRTT_Nom
tSW2
tSW1
VSW2
u
od
DQ, DM
DQS, /DQS
TDQS, /TDQS
VSW1
VSSQ
c) Definition of tAOF
Begin point: Rising edge of CK - /CK with
ODT being first registered low
CK
VTT
tAOFPD
VRTT_Nom
End point: Extrapolated point at VRTT_Nom
tSW2
DQ, DM
DQS, /DQS
TDQS, /TDQS
ct
/CK
tSW1
VSW2
VSW1
VSSQ
d) Definition of tAOFPD
Preliminary Data Sheet E0966E60 (Ver. 6.0)
20
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLcnw
Begin point: Rising edge of CK - /CK defined by
the end point of ODTLcwn4 or ODTLcwn8
CK
VTT
/CK
tADC
tADC
L
EO
VRTT_Nom
End point:
DQ, DM
Extrapolated
DQS, /DQS
point at VRTT_Nom
TDQS, /TDQS
VRTT_Nom
TSW21
TSW11
TSW22
VSW2
TSW12
VSW1
VRTT_Wr
End point: Extrapolated point at VRTT_Wr
VSSQ
e) Definition of tADC
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
21
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
IDD Measurement Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
L
EO
Within the tables about IDD measurement conditions, the following definitions are used:
• L: VIN ≤ VIL (AC)(max.)
• H: VIN ≥ VIH (AC)(min.);
• STABLE: inputs are stable at H or L level
• FLOATING: inputs are VREF = VDDQ / 2
• SWITCHING: Described in the following Definition of SWITCHING table.
• N/A: not available
[Definition of SWITCHING]
Signals
Definitions
If not otherwise mentioned the inputs are stable at H or L during 4 clocks and change then to the
opposite value
(e.g. Ax Ax Ax Ax /Ax /Ax /Ax /Ax Ax Ax Ax Ax .....
Please see each IDDx definition for details
If not otherwise mentioned the bank addresses should be switched like the row/column
addresses - please see each IDDx definition for details
Define D = {/CS, /RAS, /CAS, /WE } := {H, L, L, L}
Define /D = {/CS, /RAS, /CAS, /WE } := {H, H, H, H}
Address (row, column)
Bank address
Define Command Background Pattern = D D /D /D D D /D /D D D /D /D ...
Command
(/CS, /RAS, /CAS, /WE)
Pr
If other commands are necessary (e.g. ACT for IDD0 or Read for IDD4R) the Background Pattern
Command is substituted by the respective /CS, /RAS, /CAS, /WE levels of the necessary command.
See each IDDx definition for details and figures of Example of IDD1, IDD2N/IDD3N, IDD4R.
Data DQ is changing between H and L every other data transfer (once per clock) for DQ signals,
which means that data DQ is stable during one clock;
see each IDDx definition for exceptions from this rule and for further details.
See figures of Example of IDD1, IDD2N/IDD3N, IDD4R.
Data (DQ)
Data Masking (DM)
NO Switching; DM must be driven L all the time
u
od
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR3-1333
DDR3-1066
DDR3-800
Parameter
8-8-8
9-9-9
6-6-6
7-7-7
8-8-8
5-5-5
6-6-6
Unit
CL (IDD)
8
9
6
7
8
5
6
tCK
tCK min.(IDD)
1.5
1.5
1.875
1.875
1.875
2.5
2.5
ns
12
13.5
11.25
13.13
15
12.5
tRC min. (IDD)
48
49.5
48.75
50.63
52.50
50
52.5
ns
tRAS min.(IDD)
36
36
37.5
37.5
37.5
37.5
37.5
ns
tRP min. (IDD)
12
13.5
11.25
13.13
15
12.5
15
ns
tFAW (IDD)-×4/×8
30
30
37.5
37.5
37.5
40
40
ns
tFAW (IDD)-×16
45
45
50
50
50
50
50
ns
tRRD (IDD)-×4/×8
6.0
6.0
7.5
7.5
7.5
10
10
ns
tRRD (IDD)-×16
7.5
7.5
10
10
10
10
10
ns
tRFC (IDD)
90
90
90
90
90
90
90
ns
Preliminary Data Sheet E0966E60 (Ver. 6.0)
22
15
ns
ct
tRCD min. (IDD)
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
The following conditions apply:
• IDD specifications are tested after the device is properly initialized.
• Input slew rate is specified by AC Parametric test conditions.
• IDD parameters are specified with ODT and output buffer disabled (MR1 bit A12 = 1).
IDD Measurement Conditions for IDD0 and IDD1
IDD0
IDD1
Name
Operating Current 0
-> One Bank Activate
-> Precharge
Operating Current 1
-> One Bank Activate
-> Read
-> Precharge
L
EO
Symbol
Measurement Condition
⎯
Figure IDD1 Example
CKE
H
H
External Clock
on
on
tCK
tCK min (IDD)
tCK min (IDD)
tRC
tRC min (IDD)
tRC min (IDD)
tRAS
tRAS min (IDD)
tRAS min (IDD)
tRCD
N/A
tRCD min (IDD)
tRRD
N/A
N/A
CL
N/A
CL(IDD)
AL
N/A
0
/CS
H between. Activate and Precharge Commands H between Activate, Read and Precharge
Command inputs
(/CS, /RAS, /CAS, /WE)
Pr
Timing Diagram Example
SWITCHING (see Definition of SWITCHING
table); only exceptions are Activate and
Precharge commands; example of IDD0 pattern:
A0 D /D /D D D /D /D D D /D/D D D /D P0
(DDR3-800: tRAS = 37.5ns between (A)ctivate
and (P)recharge to bank 0;
SWITCHING (see Definition of SWITCHING
table); only exceptions are Activate, Read and
Precharge commands; example of IDD1 pattern:
A0 D /D /D D R0 /D /D D D /D/D D D /D P0
(DDR3-800 -555: tRCD = 12.5ns between
(A)ctivate and (R)ead to bank 0;
u
od
Definition of D and /D: see Definition of
SWITCHING table
Row addresses SWITCHING (see Definition of
SWITCHING table);A10 must be L all the time!
Bank address is fixed (bank 0)
Bank address is fixed (bank 0)
Data I/O
SWITCHING (see Definition of SWITCHING
table)
Read Data: output data switches every clock,
which means that Read data is stable during one
clock cycle.
To achieve IOUT = 0mA the output buffer should
be switched off by MR1 bit A12 set to “1”.
When there is no read data burst from DRAM the
DQ I/O should be FLOATING.
Output Buffer DQ, DQS
/ MR1 bit A12
off / 1
off / 1
ODT
/ MR1 bits [A6, A2]
disabled
/ [0,0]
disabled
/ [0,0]
Row, column addresses
Bank addresses
ct
Definition of D and /D: see Definition of
SWITCHING table
Row addresses SWITCHING (see Definition of
SWITCHING table); A10 must be L all the time!
Burst length
N/A
8 fixed / MR0 bits [A1, A0] = {0,0}
Active banks
one
ACT-PRE loop
one
ACT-READ-PRE loop
Idle banks
all other
all other
Precharge Power-down
Mode / MR0 bit A12
N/A
N/A
Preliminary Data Sheet E0966E60 (Ver. 6.0)
23
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
T15
T16
T17
T18
CK
/CK
BA 0 to 2
0
Address
(A0 to A9)
Address
(A10)
3FF
00
11
000
3FF
000
3FF
00
11
00
00
L
L
EO
Address
(A11 to A12)
000
/CS
/RAS
/CAS
/WE
Command
ACT
D
/D
/D
D
READ
/D
/D
D
DQ
/D
0
/D
0
1
D
1
0
D
0
1
/D
PRE
D
D
/D
/D
1
Pr
DM
D
IDD1 measurement loop
IDD1 Example* (DDR3-800-555, 512Mb ×8)
Note: Data DQ is shown but the output buffer should be switched off (per MR1 bit A12 = 1) to achieve IOUT = 0mA.
Address inputs are split into 3 parts.
ct
u
od
Preliminary Data Sheet E0966E60 (Ver. 6.0)
24
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
IDD Measurement Conditions for IDD2N, IDD2P (1), IDD2P (0) and IDD2Q
Symbol
1
IDD2P (1)*
Precharge standby
current
Precharge power-down
current
(fast exit
MR0 bit A12= 1)
Precharge power-down
current
Precharge quiet
standby current
(slow exit
MR0 bit A12= 0)
Figure IDD2N/IDD3N
Example
⎯
⎯
⎯
CKE
H
L
L
H
External Clock
on
on
on
on
tCK
tCK min (IDD)
tCK min (IDD)
tCK min (IDD)
tCK min (IDD)
Name
IDD2P (0)*
1
IDD2N
IDD2Q
Measurement Condition
Timing Diagram Example
L
EO
tRC
N/A
N/A
N/A
N/A
tRAS
N/A
N/A
N/A
N/A
tRCD
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
CL
N/A
N/A
N/A
N/A
AL
N/A
N/A
N/A
N/A
/CS
H
STABLE
STABLE
H
Bank address,
row address and command
inputs
SWITCHING (see
Definition of SWITCHING STABLE
table)
STABLE
STABLE
Data inputs
SWITCHING
FLOATING
FLOATING
FLOATING
off / 1
off / 1
off / 1
off / 1
disabled
/ [0,0]
disabled
/ [0,0]
disabled
/ [0,0]
disabled
/ [0,0]
N/A
N/A
N/A
N/A
none
none
none
none
Output buffer DQ, DQS
/ MR1 bit A12
ODT
/ MR1 bits [A6, A2]
Burst length
Active banks
Precharge Power-down
Mode / MR0 bit A12
all
N/A
u
od
Idle banks
Pr
tRRD
all
all
all
Fast exit / 1
(any valid command
2
after tXP* )
Slow exit / 0
Slow exit
N/A
(READ and ODT
commands must satisfy
tXPDLL-AL)
Notes: 1. In DDR3 the MR0 bit A12 defines DLL-on/off behaviors only for precharge power-down. There are two
different precharge power-down states possible: one with DLL-on (fast exit, bit A12 = 1) and one with
DLL-off (slow exit, bit A12 = 0).
2. Because it is an exit after precharge power-down the valid commands are: bank activate (ACT), autorefresh (REF), mode register set (MRS), self-refresh (SELF).
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
25
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
/D
/D
CK
/CK
BA
0 to 2
Address
(A0 to A12)
/CS
0
7
0
0000
1FFF
0000
H
L
EO
/RAS
/CAS
/WE
Command
DQ
0 to 7
/D
D
D
/D
/D
D
D
D
FF 00 00 FF FF 00 00 FF FF 00 00 FF FF 00 00 FF FF 00 00 FF FF 00 00
IDD2N/ IDD3N measurement loop
Pr
DM
/D
IDD2N/IDD3N Example (DDR3-800-555, 512Mb ×8)
ct
u
od
Preliminary Data Sheet E0966E60 (Ver. 6.0)
26
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
IDD Measurement Conditions for IDD3N, IDD3P (fast exit)
Symbol
IDD3N
IDD3P (1)
Name
Active standby current
Active power-down current*
(always fast exit)
Timing Diagram Example
Figure IDD2N/IDD3N Example
⎯
CKE
H
L
External Clock
on
on
tCK
tCK min (IDD)
tCK min (IDD)
tRC
N/A
N/A
tRAS
N/A
N/A
tRCD
N/A
N/A
tRRD
N/A
N/A
Measurement Condition
L
EO
CL
N/A
N/A
AL
N/A
N/A
H
STABLE
/CS
Address and command inputs
Data inputs
Burst length
Active banks
Idle banks
STABLE
FLOATING
off / 1
disabled
/ [0,0]
disabled
/ [0,0]
N/A
N/A
none
none
all
all
N/A
N/A (Active Power-down
Mode is always “Fast Exit” with DLL-on)
u
od
Precharge Power-down
Mode / MR0 bit A12
off / 1
Pr
Output buffer DQ, DQS
/ MR1 bit A12
ODT
/ MR1 bits [A6, A2]
SWITCHIN
(see Definition of SWITCHING table)
SWITCHING
(see Definition of SWITCHING table)
Note: DDR3 will offer only one active power-down mode with DLL-on (-> fast exit). MR0 bit A12 will not be used for
active power-down. Instead bit A12 will be used to switch between two different precharge power-down
modes.
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
27
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
IDD Measurement Conditions for IDD4R, IDD4W and IDD7
Symbol
IDD4R
IDD4W
IDD7
Name
Operating current
(Burst read operating)
Operating current
(Burst write operating)
All bank interleave read current
IDD4R Example
⎯
⎯
Measurement Condition
Timing Diagram Example
H
H
H
External Clock
on
on
on
tCK
tCK min (IDD)
tCK min (IDD)
tCK min (IDD)
tRC
N/A
N/A
tRC min. (IDD)
tRAS
N/A
N/A
tRAS min. (IDD)
tRCD
N/A
N/A
tRCD min. (IDD)
L
EO
CKE
N/A
N/A
tRRD min. (IDD)
CL
CL (IDD)
CL (IDD)
CL (IDD)
AL
0
0
tRCD min. − 1tCK
H between valid commands
H between valid commands
H between valid commands
SWITCHING (see Definition of
SWITCHING table);
only exceptions are read
commands -> IDD4R pattern:
R0 D /D /D R1 D /D /D R2 D /D
/D R3 D /D /D R4 .....
Rx = Read from bank x;
Definition of D and /D: see
Definition of SWITCHING table
Column addresses SWITCHING
(see Definition of SWITCHING
table);
A10 must be L all the time!
SWITCHING (see Definition of
SWITCHING table);
only exceptions are write
commands -> IDD4W pattern:
For patterns see pattern in IDD7
W0 D /D /D W1 D /D /D W2 D /D
Timing Patterns section
/D W3 D /D /D W4...
Wx = Write to bank x;
Definition of D and /D: see
Definition of SWITCHING table
Column addresses SWITCHING
(see Definition of SWITCHING
STABLE during DESELECTs
table);
A10 must be L all the time!
bank address cycling
bank address cycling
(0 -> 1 -> 2 -> 3 ...), see pattern
(0 -> 1 -> 2 -> 3 ...)
in IDD7 Timing Patterns section
/CS
Command inputs
(/CS, /RAS, /CAS, /WE)
Row, column addresses
Data I/O
bank address cycling
(0 -> 1 -> 2 -> 3 ...)
u
od
Bank addresses
Pr
tRRD
Seamless read data burst (BL8):
output data switches every
Seamless write data burst (BL8):
clock, which means that Read
input data switches every clock,
data is stable during one clock
which means that write data is
cycle.
stable during one clock cycle.
To achieve IOUT = 0mA the
DM is low all the time
output buffer should be switched
off by MR1 bit A12 set to “1”.
Burst length
off / 1
disabled
/ [0,0]
8 fixed / MR0 [A1, A0] = {0,0}
off / 1
disabled
/ [0,0]
8 fixed / MR0 bits [A1, A0] =
{0,0}
Active banks
all
all
Idle banks
none
none
Precharge Power-down
Mode / MR0 bit A12
N/A
N/A
Preliminary Data Sheet E0966E60 (Ver. 6.0)
28
To achieve IOUT = 0mA the
output buffer should be switched
off by MR1 bit A12 set to “1”.
off / 1
ct
Output Buffer DQ, DQS
/ MR1 bit A12
ODT
/ MR1 bits [A6, A2]
Read data (BL8): output data
switches every clock, which
means that Read data is stable
during one clock cycle.
disabled
/ [0,0]
8 fixed / MR0 bits [A1, A0] =
{0,0}
all, rotational
none
N/A
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CK
/CK
BA
0 to 2
Address
(A0 to A9)
1
2
3
000
3FF
000
3FF
00
11
L
EO
Address
(A10)
0
Address
(A11 to A12)
L
00
11
/CS
/RAS
/CAS
/WE
DQ
0 to 7
Pr
Command
0 to 2
READ
D
/D
READ
D
/D
/D
READ
D
/D
/D
READ
D
00 00 FF FF 00 00 FF FF 00 00 FF FF 00 00 FF FF
u
od
DM
/D
Start of measurement loop
IDD4R Example* (DDR3-800-555, 512Mb ×8)
Note: Data DQ is shown but the output buffer should be switched off (per MR1 bit A12 = 1) to achieve IOUT = 0mA.
Address inputs are split into 3 parts.
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
29
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
IDD7 Timing Patterns
The detailed timings are shown in the IDD7 Timing Patterns for 8 Banks tables.
Speed bins
DDR3-800
tFAW
Organization (ns)
tFAW
(tCK)
DDR3-1333
tRRD
(ns)
tRRD
(tCK)
all
×4/×8
40
16
10
4
all
×16
50
20
10
4
all
×4/×8
37.5
20
7.5
4
all
×16
50
27
10
6
all
×4/×8
30
20
6
4
all
×16
45
30
7.5
5
L
EO
DDR3-1066
Bin
Timing Patterns
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D A4
RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
D A4 RA4 D D A5 RA5 D D A6 RA6 DD A7 RA7 D D D D
DD
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 DD D D D
D A4 RA4 D D A5 RA5 D D A6 RA6 DD A7 RA7 D D D D
DD
A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D DD D A3
RA3 D D D D D D D A4 RA4 D D D D A5 RA5 D D D D A6
RA6 D D D D A7 RA7 D D D DD D D
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D
D A4 RA4 D D A5 RA5 D D A6 RA6 DD A7 RA7 D D D D
DD
A0 RA0 D D D A1 RA1 D D D A2 RA2 D D D A3 RA3 D D
D D D D D D D D D D D A4 RA4 D D DA5 RA5 D D D A6
RA6 D D D A7 RA7 D D D DD D D D D D D D D
ct
u
od
Pr
Remark: Ax = Active command for bank x.
RAx = Read with auto precharge command from bank x.
ex. RA0 = READA command from bank 0
Notes: 1. All banks are being interleaved at minimum tRC (IDD) without violating tRRD (IDD) and tFAW (IDD) using
a burst length = 8.
2. Control and address bus inputs are STABLE during DESELECTs.
3. IOUT = 0mA.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
30
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
IDD Measurement Conditions for IDD5B
Symbol
IDD5B
Name
Burst refresh current
Measurement Condition
Timing Diagram Example
H
External Clock
on
tCK
tCK min. (IDD)
tRC
N/A
tRAS
N/A
tRCD
N/A
tRRD
N/A
L
EO
CKE
tRFC
tRFC min. (IDD)
CL
N/A
AL
N/A
H between valid commands
Address and command inputs
SWITCHING
Data inputs
SWITCHING
Output buffer DQ, DQS
/ MR1 bit A12
off / 1
ODT
/ MR1 bits [A6, A2]
disabled
/ [0,0]
Burst length
Active banks
Idle banks
N/A
Refresh command every tRFC = tRFC (min.)
none
N/A
ct
u
od
Precharge Power-down
Mode / MR0 bit A12
Pr
/CS
Preliminary Data Sheet E0966E60 (Ver. 6.0)
31
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
IDD Measurement Conditions for IDD6 and IDD6ET
Symbol
IDD6
IDD6ET
Name
Self-refresh current extended temperature
Self-refresh current normal temperature range
range
TC = 0 to +85°C
TC = 0 to +95°C
Measurement Condition
Temperature
TC = +85°C
TC = +95°C
Disabled / 0
Disabled / 0
L
EO
Auto Self-refresh (ASR) /
MR2 bit A6
Self-Refresh Temperature Range
(SRT) / MR2 bit A7
Disabled / 0
Enabled / 1
CKE
L
L
External Clock
OFF; CK and /CK at L
OFF; CK and /CK at L
tCK
N/A
N/A
tRC
N/A
N/A
tRAS
N/A
N/A
tRCD
N/A
N/A
tRRD
N/A
N/A
CL
N/A
N/A
N/A
N/A
/CS
FLOATING
FLOATING
Command inputs
/RAS, /CAS, /WE)
FLOATING
FLOATING
Row, column addresses
Bank addresses
Data I/O
FLOATING
FLOATING
FLOATING
FLOATING
FLOATING
FLOATING
off / 1
off / 1
disabled
/ [0,0]
disabled
/ [0,0]
u
od
Output Buffer DQ, DQS
/ MR1 bit A12
ODT
/ MR1 bits [A6, A2]
Pr
AL
Burst length
8 fixed / MR0 bits [A1, A0] = {0,0}
8 fixed / MR0 bits [A1, A0] = {0,0}
Active banks
all during self-refresh actions
all during self-refresh actions
Idle banks
all between self-refresh actions
all between self-refresh actions
Precharge Power-down
Mode / MR0 bit A12
N/A
N/A
IDD6 Current Definition
Parameter
Symbol
Extended temperature range
self-refresh current
IDD6ET
Auto self-refresh current
IDD6TC
CKE ≤ 0.2V; external clock off, CK and /CK at 0V; Other control and address
inputs are FLOATING; Data Bus inputs are FLOATING, PASR disabled.
Applicable for MR2 settings A6 = 0 and A7 = 0.
CKE ≤ 0.2V; external clock off, CK and /CK at 0V; Other control and address
inputs are FLOATING; Data Bus inputs are FLOATING, PASR disabled.
Applicable for MR2 settings A6 = 0 and A7 = 1
CKE ≤ 0.2V; external clock off, CK and /CK at 0V; Other control and address
inputs are FLOATING; Data Bus inputs are FLOATING, PASR disabled.
Applicable when ASR is enabled by MR2 settings A6 = 1 and A7 = 0.
ct
Normal temperature range selfIDD6
refresh current
Parameter/Condition
.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
32
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Electrical Specifications
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
×4
Symbol
Operating current
(ACT-PRE)
IDD0
Operating current
(ACT-READ-PRE)
IDD1
Data rate (Mbps) max.
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
1333
1066
800
L
EO
Parameter
IDD2PF
Precharge power-down
standby current
IDD2PS
Precharge quiet standby
current
IDD2Q
Precharge standby current IDD2N
Active power-down current
IDD3P
(Always fast exit)
× 16
max.
125
110
105
140
135
125
45
40
35
12
11
10
75
65
55
80
70
60
50
45
35
100
85
70
210
175
140
235
195
150
305
295
280
365
300
270
145
125
120
175
165
150
45
40
35
12
11
10
75
65
55
80
70
60
50
45
35
110
95
80
325
270
220
315
260
205
305
295
280
420
385
380
Unit
mA
IDD3N
Operating current
(Burst read operating)
IDD4R
Operating current
(Burst write operating)
IDD4W
Burst refresh current
IDD5B
All bank interleave read
current
IDD7R
mA
Fast PD Exit
mA
Slow PD Exit
mA
mA
mA
mA
mA
mA
u
od
Active standby current
Notes
mA
Pr
125
110
105
140
135
125
45
40
35
12
11
10
75
65
55
80
70
60
50
45
35
100
85
70
190
160
125
205
170
135
305
295
280
350
290
265
×8
max.
mA
mA
Self-Refresh Current (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
Auto self-refresh current
IDD6TC
Grade
×8
× 16
max.
max.
max.
8
8
8
16
16
16
16
16
16
Preliminary Data Sheet E0966E60 (Ver. 6.0)
33
Unit
Notes
ct
Self-refresh current
IDD6S
normal temperature range
Self-refresh current
extended temperature
IDD6ET
range
×4
mA
mA
mA
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
Value
Unit
Notes
Input leakage current
⏐ILI⏐
TBD
μA
VDD ≥ VIN ≥ VSS
Output leakage current
⏐ILO⏐
TBD
μA
VDDQ ≥ VOUT ≥ VSS
Pin Capacitance (TC = 25°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
Pins
min.
max.
Unit
Notes
CK, /CK
TBD
TBD
pF
1, 2, 4
CCK
TBD
1.6
pF
1, 2, 4
CDCK
TBD
TBD
pF
1, 2, 3
CDCK
0
0.15
pF
1, 2, 3
TBD
TBD
pF
1
L
EO
Input pin capacitance, CK and /CK
DDR3-1333
DDR3-1066, 800
Delta input pin capacitance, CK and
/CK
DDR3-1333
DDR3-1066, 800
Input pin capacitance, control pins
DDR3-1333
DDR3-1066, 800
DDR3-1066, 800
Delta input/output pin capacitance
DDR3-1333
DDR3-1066, 800
TBD
1.5
pF
1
CIN_ADD_CMD
/RAS, /CAS, /WE,
Address
TBD
1.5
pF
1
CDIN_CTRL
/CS, CKE, ODT
TBD
TBD
pF
1, 5
−0.5
0.3
pF
1, 5
TBD
TBD
pF
1, 6
−0.5
0.5
pF
1, 6
1.5
2.5
pF
1, 7
CDIN_CTRL
CDIN_ADD_CMD
/RAS, /CAS, /WE,
Address
CDIN_ADD_CMD
CIO
CIO
CDIO
CDIO
DQ, DQS, /DQS,
TDQS, /TDQS
DM
u
od
Input/output pin capacitance
DDR3-1333
/CS, CKE, ODT
Pr
Delta input pin capacitance, address
and command pins
DDR3-1333
DDR3-1066, 800
CIN_CTRL
CIN_CTRL
Input pin capacitance, address and
command pins
Delta input pin capacitance, control
pins
DDR3-1333
DDR3-1066, 800
CCK
1.5
3.0
pF
1, 7
TBD
TBD
pF
1, 8, 9
−0.5
0.3
pF
1, 8, 9
ct
Notes: 1. VDD, VDDQ, VSS, VSSQ applied and all other pins (except the pin under test) floating.
VDD = VDDQ =1.5V, VBIAS=VDD/2
2. This parameter is Non-stacked (monolith) DDR3 SDRAM spec. Stacked devices pin parasitics are TBD.
3. Absolute value of CCK(CK-pin) − CCK(/CK-pin)
4. CCK (min.) will be equal to CIN (min.)
5. CDIN_CTRL = CIN_CTRL − 0.5 × (CCK(CK-pin) + CCK(/CK-pin))
6. CDIN_ADD_CMD = CIN_ADD_CMD − 0.5 × (CCK(CK-pin) + CCK(/CK-pin))
7. TDQS/TDQS are not necessarily input function, but since TDQS is sharing DM pin and the parasitic
characterization of TDQS/TDQS should be close as much as possible, CIO and CDIO requirement is
applied.
8. DQ should be in high impedance state.
9. CDIO = CIO (DQ) −0.5 × (CIO(DQS-pin) + CIO(/DQS-pin)).
Preliminary Data Sheet E0966E60 (Ver. 6.0)
34
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Standard Speed Bins
[DDR3-1333 Speed Bins]
Speed Bin
CL-tRCD-tRP
Symbol
/CAS write
latency
DDR3-1333G
DDR3-1333H
8-8-8
9-9-9
max.
min.
max.
Unit
12
20
13.5
20
ns
tRCD
12
⎯
13.5
⎯
ns
L
EO
min.
tAA
tRP
12
⎯
13.5
⎯
ns
tRC
48.0
⎯
49.5
⎯
ns
tRAS
36
9 × tREFI
36
9 × tREFI
ns
tCK (avg)@CL=5
tCK (avg)@CL=6
tCK (avg)@CL=7
tCK (avg)@CL=8
tCK (avg)@CL=10
8
CWL = 5
2.5
3.3
Reserved
Reserved
ns
1, 2, 3, 4, 7
CWL = 6, 7
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 5
2.5
3.3
2.5
3.3
ns
1, 2, 3, 7
CWL = 6
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4, 7
CWL = 7
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 5
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
Reserved
Reserved
ns
1, 2, 3, 4, 7
CWL = 7
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4
CWL = 5
Reserved
Reserved
Reserved
Reserved
ns
4
Pr
tCK (avg)@CL=9
Notes
1.875
< 2.5
1.875
< 2.5
ns
1, 2, 3, 7
CWL = 7
1.5
< 1.875
Reserved
Reserved
ns
1, 2, 3, 4
CWL = 5, 6
Reserved
Reserved
Reserved
Reserved
ns
4
CWL= 7
1.5
< 1.875
< 1.5
< 1.875
ns
1, 2, 3, 4
CWL = 5, 6
Reserved
Reserved
Reserved
Reserved
ns
4
CWL= 7
1.5
< 1.875
1.5
< 1.875
ns
1, 2, 3
Optional
Optional
ns
5
CWL= 7
Optional
u
od
CWL = 6
Optional
Supported CL settings
5, 6, 7, 8, 9, 10
6, 8, 9, 10
nCK
Supported CWL
settings
5, 6, 7
5, 6, 7
nCK
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
35
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
[DDR3-1066 Speed Bins]
Speed Bin
DDR3-1066E
CL-tRCD-tRP
6-6-6
/CAS write
latency
Symbol
DDR3-1066F
DDR3-1066G
7-7-7
8-8-8
min.
max.
min.
max.
min.
max.
Unit
tAA
11.25
20
13.125
20
15
20
ns
tRCD
11.25
⎯
13.125
⎯
15
⎯
ns
tRP
11.25
⎯
13.125
⎯
15
⎯
ns
Notes
48.75
⎯
50.625
⎯
52.50
⎯
ns
tRAS
37.5
9 × tREFI
37.5
9 × tREFI
37.5
9 × tREFI
ns
8
CWL = 5
2.5
3.3
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3,
4, 6
CWL = 6
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 5
2.5
3.3
2.5
3.3
2.5
3.3
ns
1, 2, 3, 6
CWL = 6
1.875
< 2.5
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4
CWL = 5
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
1.875
< 2.5
Reserved
Reserved
ns
1, 2, 3, 4
CWL = 5
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
1.875
< 2.5
1.875
< 2.5
ns
1, 2, 3
L
EO
tRC
tCK (avg)@CL=5
tCK (avg)@CL=6
tCK (avg)@CL=7
tCK (avg)@CL=8
[DDR3-800 Speed Bins]
Speed Bin
CL-tRCD-tRP
5, 6, 7, 8
6, 7, 8
6, 8
nCK
5, 6
5, 6
5, 6
nCK
Pr
Supported CL
settings
Supported CWL
settings
DDR3-800E
5-5-5
6-6-6
min.
tAA
12.5
tRCD
12.5
tRP
12.5
tRC
50
tRAS
37.5
tCK (avg)@CL=5
CWL = 5
tCK (avg)@CL=6
CWL = 5
2.5
2.5
5, 6
Supported CWL settings
5
max.
min.
max.
Unit
20
15
20
ns
⎯
15
⎯
ns
⎯
15
⎯
ns
Notes
⎯
52.5
⎯
ns
9 × tREFI
37.5
9 × tREFI
ns
8
3.3
Reserved
Reserved
ns
1, 2, 3, 4
2.5
3.3
ns
1, 2, 3
3.3
Notes: 1
6
nCK
5
nCK
ct
Supported CL settings
u
od
/CAS write
latency
Symbol
DDR3-800F
The CL setting and CWL setting result in tCK (avg) (min.) and tCK (avg) (max.) requirements. When
making a selection of tCK (avg), both need to be fulfilled: Requirements from CL setting as well as
requirements from CWL setting.
2. tCK (avg) (min.) limits: Since /CAS latency is not purely analog - data and strobe output are synchronized
by the DLL - all possible intermediate frequencies may not be guaranteed. An application should use the
next smaller JEDEC standard tCK (avg) value (2.5, 1.875, 1.5, or 1.25ns) when calculating
CL (ntCK) = tAA(ns) / tCK(avg)(ns), rounding up to the next ‘Supported CL’.
3. tCK (avg) (max.) limits: Calculate tCK (avg) + tAA (max.)/CLselected and round the resulting tCK (avg)
down to the next valid speed bin limit (i.e. 3.3ns or 2.5ns or 1.875ns or 1.25ns). This result is tCK (avg)
(max.) corresponding to CLselected.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
36
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
4. ‘Reserved’ settings are not allowed. User must program a different value.
5. 'Optional' settings allow certain devices in the industry to support this setting, however, it is not a
mandatory feature.
6. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3-1066 Speed Bins which are not subject to production tests but verified by design/characterization.
7. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3-1333 Speed Bins which is not subject to production tests but verified by design/characterization.
8. tREFI depends on operating case temperature (TC).
L
EO
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
37
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V, VSS, VSSQ = 0V)
AC Characteristics [DDR3-1333]
-DG, -DJ
Data rate (Mbps)
1333
Symbol
min.
max.
Unit
Average clock cycle time
tCK (avg)
1500
3333
ps
Minimum clock cycle time
(DLL-off mode)
tCK (DLL-off)
8
⎯
ns
Average CK high-level width
tCH (avg)
0.47
0.53
tCK (avg)
Average CK low-level width
tCL (avg)
0.47
0.53
tCK (avg)
⎯
ns
26
⎯
ns
26
⎯
ns
26
L
EO
Parameter
Active to read or write command delay
tRCD
Precharge command period
tRP
Active to active/auto-refresh command time
tRC
12 (DG)
13.5 (DJ)
12 (DG)
13.5 (DJ)
48 (DG)
49.5 (DJ)
Notes
6
tRAS
36
9 × tREFI
ns
26
Active bank A to active bank B command period
tRRD
6
⎯
ns
26, 27
tRRD
4
⎯
nCK
26, 27
tRRD
7.5
⎯
ns
26, 27
tRRD
4
⎯
nCK
26, 27
tFAW
30
Pr
⎯
ns
26
tFAW
45
⎯
ns
26
tIH (base)
TBD
⎯
ps
16, 23
tIS (base)
TBD
⎯
ps
16, 23
tDH (base)
TBD
⎯
ps
17, 25
tDS (base)
TBD
⎯
ps
17, 25
Control and Address input pulse width for each input tIPW
0.6
⎯
tCK (avg)
DQ and DM input pulse width for each input
tDIPW
0.35
⎯
tCK (avg)
(x4/x8)
Active bank A to active bank B command period
(x16)
Four active window
(x4/x8)
(x16)
Address and control input hold time
(VIH/VIL (DC) levels)
Address and control input setup time
(VIH/VIL (AC) levels)
DQ and DM input hold time
(VIH/VIL (DC) levels)
DQ and DM input setup time
(VIH/VIL (AC) levels)
DQ high-impedance time
DQ low-impedance time
DQS, /DQS high-impedance time
(RL + BL/2 reference)
DQS, /DQS low-impedance time
(RL − 1 reference)
u
od
Active to precharge command
tHZ (DQ)
⎯
250
ps
12, 13, 14
tLZ (DQ)
−500
250
ps
12, 13, 14
tHZ (DQS)
⎯
250
ps
12, 13, 14
tLZ (DQS)
−500
250
ps
12, 13, 14
12, 13
⎯
125
ps
tCCD
4
⎯
nCK
DQ output hold time from DQS, /DQS
tQH
0.36
⎯
tDQSCK
−225
225
ps
tDQSS
−0.25
0.25
tCK (avg) 24
DQS falling edge hold time from rising CK
tDSH
0.2
⎯
tCK (avg) 24
DQS falling edge setup time to rising CK
tDSS
0.2
⎯
tCK (avg) 24
DQS input high pulse width
tDQSH
0.4
0.6
tCK (avg)
DQS input low pulse width
tDQSL
0.4
0.6
tCK (avg)
DQS, /DQS rising edge output access time from
rising CK, /CK
DQS latching rising transitions to associated clock
edges
Preliminary Data Sheet E0966E60 (Ver. 6.0)
38
ct
tDQSQ
/CAS to /CAS command delay
DQS, /DQS to DQ skew, per group, per access
tCK (avg) 12, 13
12, 13
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
-DG, -DJ
Data rate (Mbps)
1333
Symbol
min.
max.
Unit
DQS output high time
tQSH
0.38
⎯
tCK (avg) 12, 13
DQS output low time
tQSL
0.38
⎯
tCK (avg) 12, 13
Mode register set command cycle time
tMRD
4
⎯
nCK
Mode register set command update delay
tMOD
15
⎯
ns
27
tMOD
12
⎯
nCK
27
0.9
⎯
tCK (avg) 1, 19
L
EO
Parameter
Notes
Read preamble
tRPRE
Read postamble
tRPST
0.3
⎯
tCK (avg) 11, 12, 13
Write preamble
tWPRE
0.9
⎯
tCK (avg) 1
Write postamble
tWPST
0.4
⎯
tCK (avg) 1
Write recovery time
tWR
15
⎯
ns
WR + RU
⎯
(tRP/tCK (avg))
RL + tCCD/2 +
⎯
2nCK − WL
RL + tCCD + 2nCK
⎯
− WL
26
nCK
Auto precharge write recovery + precharge time
tDAL
Read to write command delay
(BC4MRS, BC4OTF)
tRTW
(BL8MRS, BL8OTF)
tRTW
Internal write to read command delay
tWTR
7.5
⎯
ns
18, 26, 27
tWTR
4
⎯
nCK
18, 26, 27
tRTP
7.5
⎯
ns
26, 27
tRTP
4
⎯
nCK
26, 27
Pr
Internal read to precharge command delay
Minimum CKE low width for self-refresh entry to exit
tCKESR
timing
Valid clock requirement after self-refresh entry or
tCKSRE
power-down entry
tCKE (min.)+1nCK ⎯
tCKSRE
⎯
ns
27
5
⎯
nCK
27
u
od
Valid clock requirement before self-refresh exit or
power-down exit
10
10
⎯
ns
27
tCKSRX
5
⎯
nCK
27
tXS
tRFC (min.) + 10
⎯
ns
27
tXS
5
⎯
nCK
27
tXSDLL
tDLLK (min.)
⎯
nCK
tRFC
90
⎯
ns
tREFI
⎯
7.8
μs
tREFI
⎯
3.9
μs
tCKE
5.625
⎯
tCKE
3
⎯
tXPR
tRFC (min.)+10
⎯
tXPR
5
⎯
DLL locking time
tDLLK
512
⎯
Power-down entry to exit time
tPD
tCKE (min.)
9 × tREFI
Exit self-refresh to commands not requiring
a locked DLL
Exit self-refresh to commands requiring a locked
DLL
Auto-refresh to active/auto-refresh command time
Average periodic refresh interval
(0°C ≤ TC ≤ +85°C)
(+85°C < TC ≤ +95°C)
CKE minimum pulse width
(high and low pulse width)
Exit reset from CKE high to a valid command
Preliminary Data Sheet E0966E60 (Ver. 6.0)
39
ct
tCKSRX
ns
27
nCK
27
ns
27
nCK
27
nCK
15
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
-DG, -DJ
Data rate (Mbps)
1333
Symbol
min.
max.
Unit
Notes
Exit precharge power-down with DLL frozen to
commands requiring a locked DLL
tXPDLL
24
⎯
ns
2
tXPDLL
10
⎯
nCK
2
Exit power-down with DLL on to any valid command;
Exit precharge power- down with DLL frozen to
tXP
commands not requiring a locked DLL
6
⎯
ns
27
tXP
3
⎯
nCK
27
L
EO
Parameter
Command pass disable/enable delay
tCPDED
1
⎯
nCK
Timing of last ACT command to power-down entry
tACTPDEN
1
⎯
nCK
20
Timing of last PRE command to power-down entry
tPRPDEN
1
⎯
nCK
20
tRDPDEN
RL + 4 + 1
⎯
nCK
⎯
nCK
9
⎯
nCK
9
WL + 4 + WR + 1
⎯
nCK
10
Timing of last READ/READA command to powerdown entry
Timing of last WRIT command to power-down entry
(BL8MRS, BL8OTF, BC4OTF)
tWRPDEN
(BC4MRS)
tWRPDEN
Timing of last WRITA command to power-down
entry
(BL8MRS, BL8OTF, BC4OTF)
tWRAPDEN
WL + 4 +
tWR/tCK (avg)
WL + 2 +
tWR/tCK (avg)
WL + 2 + WR + 1
⎯
nCK
10
Timing of last REF command to power-down entry
tREFPDEN
1
Pr
⎯
nCK
20, 21
Timing of last MRS command to power-down entry
tMRSPDEN
tMOD (min.)
⎯
(BC4MRS)
tWRAPDEN
ct
u
od
Preliminary Data Sheet E0966E60 (Ver. 6.0)
40
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
ODT AC Electrical Characteristics [DDR3-1333]
-DG, -DJ
Data rate (Mbps)
1333
Parameter
Symbol
min.
max.
Unit
Notes
RTT turn-on
tAON
−250
250
ps
7, 12
tAONPD
1
9
ns
tAOF
0.3
0.7
tCK (avg)
tAOFPD
1
9
ns
tANPD
WL – 1.0
⎯
nCK
ODT turn-on Latency
ODTLon
WL – 2.0
WL – 2.0
nCK
ODT turn-off Latency
ODTLoff
WL – 2.0
WL – 2.0
nCK
ODTLcnw
WL – 2.0
WL – 2.0
nCK
ODTLcwn4
⎯
4 + ODTLoff
nCK
ODTLcwn8
⎯
6 + ODTLoff
nCK
ODTH4
4
⎯
nCK
ODTH8
6
⎯
nCK
tADC
0.3
0.7
tCK (avg)
tZQinit
512
⎯
nCK
256
⎯
nCK
L
EO
Asynchronous RTT turn-on delay
(power-down with DLL frozen)
RTT_Nom and RTT_WR turn-off time
from ODTLoff reference
Asynchronous RTT turn-off delay
(power-down with DLL frozen)
ODT to power-down entry/exit
latency
RTT dynamic change skew
Power-up and reset calibration time
Normal operation full calibration time tZQoper
Normal operation short calibration
time
tZQCS
12
u
od
Pr
ODT Latency for changing from
RTT_Nom to RTT_WR
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODT high time without WRIT
command or with WRIT command
and BC4
ODT high time with WRIT command
and BL8
8, 12
TBD
⎯
nCK
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
41
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
AC Characteristics [DDR3-1066, 800]
Data rate (Mbps)
-AC, -AE, -AG
-8A, -8C
1066
800
Symbol
min.
max.
min.
max.
Unit
Clock cycle time Average CL = X
tCK(avg)
1875
3333
2500
3333
ps
Minimum clock cycle time
(DLL-off mode)
tCK(DLL-off) 8
⎯
8
⎯
ns
Average duty cycle high-level
tCH (avg)
0.47
0.53
0.47
0.53
tCK (avg)
Average duty cycle low-level
tCL (avg)
0.47
0.53
0.47
0.53
tCK (avg)
⎯
12.5 (8A)
15 (8C)
⎯
ns
26
⎯
12.5 (8A)
15 (8C)
⎯
ns
26
⎯
50 (8A)
52.5 (8C)
⎯
ns
26
L
EO
Parameter
Active to read or write command delay tRCD
Precharge command period
tRP
Active to active/auto-refresh command
tRC
time
11.25 (AC)
13.1 (AE)
15 (AG)
11.25 (AC)
13.1 (AE)
15 (AG)
48.75 (AC)
50.6 (AE)
52.5 (AG)
Notes
6
Active to precharge command
tRAS
37.5
9 × tREFI
37.5
9 × tREFI
ns
26
Active bank A to active bank B
command period
tRRD
7.5
⎯
10
⎯
ns
26, 27
tRRD
4
⎯
4
⎯
nCK
26, 27
tRRD
10
⎯
10
⎯
ns
26, 27
(x4/x8)
Active bank A to active bank B
command period
Four active window
(x4/x8)
(x16)
Pr
(x16)
4
⎯
4
⎯
nCK
26, 27
tFAW
37.5
⎯
40
⎯
ns
26
tFAW
50
⎯
50
⎯
ns
26
tIH (base)
200
⎯
275
⎯
ps
16, 23
tIS (base)
125
⎯
200
⎯
ps
16, 23
100
⎯
150
⎯
ps
17, 25
25
⎯
75
⎯
ps
17, 25
0.6
⎯
0.6
⎯
tCK (avg)
0.35
⎯
0.35
⎯
tCK (avg)
⎯
300
⎯
400
ps
−600
300
−800
400
ps
⎯
300
⎯
−600
300
−800
⎯
150
⎯
tDH (base)
tDS (base)
tIPW
tDIPW
DQ high-impedance time
tHZ (DQ)
DQ low-impedance time
tLZ (DQ)
12, 13,
14
12, 13,
14
12, 13,
14
12, 13,
14
ct
DQS, /DQS high-impedance time
tHZ (DQS)
(RL + BL/2 reference)
DQS, /DQS low-impedance time
tLZ (DQS)
(RL − 1 reference)
DQS, /DQS -DQ skew, per group, per
tDQSQ
access
u
od
Address and control input hold time
(VIH/VIL (DC) levels)
Address and control input setup time
(VIH/VIL (AC) levels)
DQ and DM input hold time
(VIH/VIL (DC) levels)
DQ and DM input setup time
(VIH/VIL (AC) levels)
Control and Address input pulse width
for each input
DQ and DM input pulse width for each
input
tRRD
400
ps
400
ps
200
ps
12, 13
/CAS to /CAS command delay
tCCD
4
⎯
4
⎯
nCK
DQ output hold time from DQS, /DQS
tQH
0.36
⎯
0.36
⎯
tCK (avg) 12, 13
−265
+265
−350
+350
ps
−0.25
0.25
−0.25
0.25
tCK (avg) 24
DQS, /DQS rising edge output access
tDQSCK
time from rising CK, /CK
DQS latching rising transitions to
tDQSS
associated clock edges
Preliminary Data Sheet E0966E60 (Ver. 6.0)
42
12, 13
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Data rate (Mbps)
Parameter
Symbol
DQS falling edge hold time from rising
tDSH
CK
DQS falling edge setup time to rising
tDSS
CK
-AC, -AE, -AG
-8A, -8C
1066
800
min.
max.
min.
max.
Unit
Notes
0.2
⎯
0.2
⎯
tCK (avg) 24
0.2
⎯
0.2
⎯
tCK (avg) 24
tDQSH
0.4
0.6
0.4
0.6
tCK (avg)
DQS input low pulse width
tDQSL
0.4
0.6
0.4
0.6
tCK (avg)
0.38
⎯
0.38
⎯
tCK (avg) 12, 13
L
EO
DQS input high pulse width
DQS output high time
tQSH
DQS output low time
tQSL
0.38
⎯
0.38
⎯
tCK (avg) 12, 13
Mode register set command cycle time tMRD
4
⎯
4
⎯
nCK
Mode register set command update
delay
tMOD
15
⎯
15
⎯
ns
27
tMOD
12
⎯
12
⎯
nCK
27
Read preamble
tRPRE
0.9
⎯
0.9
⎯
tCK (avg) 1, 19
Read postamble
tRPST
0.3
⎯
0.3
⎯
tCK (avg)
Write preamble
tWPRE
0.9
⎯
0.9
⎯
tCK (avg) 1
Write postamble
tWPST
0.4
⎯
0.4
⎯
tCK (avg) 1
Write recovery time
tWR
15
⎯
15
⎯
ns
(BL8MRS, BL8OTF)
tDAL
WR + RU
⎯
(tRP/tCK (avg))
RL + tCCD/2 +
⎯
2nCK − WL
RL + tCCD +
⎯
2nCK − WL
WR + RU
⎯
(tRP/tCK (avg))
RL + tCCD/2 +
⎯
2nCK − WL
RL + tCCD +
⎯
2nCK − WL
Pr
Auto precharge write recovery +
precharge time
Read to write command delay
(BC4MRS, BC4OTF)
Internal write to read command delay
tRTW
7.5
⎯
7.5
⎯
ns
tWTR
4
⎯
4
⎯
nCK
7.5
⎯
7.5
⎯
ns
26, 27
4
nCK
26, 27
tRTP
tCKESR
tCKSRE
tCKSRE
Valid clock requirement before selfrefresh exit or power-down exit
tCKSRX
(+85°C < TC ≤ +95°C)
4
⎯
⎯
tCKE (min.)
+1nCK
⎯
10
⎯
10
⎯
ns
27
5
⎯
5
⎯
nCK
27
10
⎯
10
⎯
ns
27
5
⎯
nCK
27
⎯
5
tXS
⎯
tRFC (min.) +
10
⎯
ns
27
tXS
5
⎯
5
⎯
nCK
27
tXSDLL
tDLLK (min.)
⎯
tDLLK (min.)
⎯
tCK
tRFC
90
⎯
90
⎯
ns
tREFI
⎯
7.8
⎯
7.8
μs
tREFI
⎯
3.9
⎯
3.9
μs
Preliminary Data Sheet E0966E60 (Ver. 6.0)
43
ct
Exit self-refresh to commands
requiring a locked DLL
Auto-refresh to active/auto-refresh
command time
Average periodic refresh interval
(0°C ≤ TC ≤ +85°C)
⎯
tCKE (min.)
+1nCK
tRFC (min.) +
10
tCKSRX
Exit self-refresh to commands not
requiring a locked DLL
18, 26,
27
18, 26,
27
tWTR
tRTP
Minimum CKE low width for selfrefresh entry to exit timing
Valid clock requirement after selfrefresh entry or power-down entry
26
nCK
u
od
Internal read to precharge command
delay
tRTW
11, 12,
13
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Data rate (Mbps)
-AC, -AE, -AG
-8A, -8C
1066
800
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
CKE minimum pulse width
(high and low pulse width)
tCKE
5.625
⎯
7.5
⎯
ns
27
tCKE
3
⎯
3
⎯
nCK
27
tXPR
tRFC(min.)+10 ⎯
ns
27
27
Exit reset from CKE high to a valid
command
tRFC(min.)+10 ⎯
L
EO
tXPR
5
⎯
5
⎯
nCK
DLL locking time
tDLLK
512
⎯
512
⎯
nCK
Power-down entry to exit time
tPD
tCKE (min.)
9 × tREFI
tCKE (min.)
9 × tREFI
Exit precharge power-down with DLL
frozen to commands requiring a locked tXPDLL
DLL
24
⎯
24
⎯
ns
2
tXPDLL
10
⎯
10
⎯
nCK
2
7.5
⎯
7.5
⎯
ns
27
tXP
3
⎯
3
⎯
nCK
27
tCPDED
1
⎯
1
⎯
nCK
tACTPDEN
1
⎯
1
⎯
nCK
20
tPRPDEN
1
⎯
1
⎯
nCK
20
⎯
nCK
Fast exit/active precharge power-down
tXP
to any command
Command pass disable/enable delay
(BC4MRS)
Pr
Timing of last ACT command to
power-down entry
Timing of last PRE command to
power-down entry
Timing of last READ/READA
command to power-down entry
Timing of last WRIT command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
tRDPDEN
RL + 4 + 1
tWRPDEN
WL + 4 +
⎯
tWR/tCK (avg)
WL + 4 +
⎯
tWR/tCK (avg)
nCK
9
tWRPDEN
WL + 2 +
⎯
tWR/tCK (avg)
WL + 2 +
⎯
tWR/tCK (avg)
nCK
9
tWRAPDEN
(BC4MRS)
tWRAPDEN
tREFPDEN
RL + 4 + 1
u
od
Timing of last WRITA command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
Timing of last REF command to
power-down entry
Timing of last MRS command to
power-down entry
⎯
15
WL + 4 + WR +
⎯
1
WL + 4 +
WR + 1
⎯
nCK
10
WL + 2 + WR +
⎯
1
WL + 2 + WR +
⎯
1
nCK
10
nCK
20, 21
1
tMRSPDEN tMOD (min.)
⎯
1
⎯
⎯
tMOD (min.)
⎯
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
44
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
ODT AC Electrical Characteristics [DDR3-1066, 800]
Data rate (Mbps)
-AC, -AE, -AG
-8A, -8C
1066
800
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
RTT turn-on
tAON
–300
300
–400
400
ps
7, 12
tAONPD
1
9
1
9
ns
tAOF
0.3
0.7
0.3
0.7
tCK (avg) 8, 12
L
EO
Asynchronous RTT turn-on delay
(power-down with DLL frozen)
RTT_Nom and RTT_WR turn-off
time from ODTLoff reference
ODT turn-off (power-down mode)
tAOFPD
1
9
1
9
ns
ODT to power-down entry/exit
latency
tANPD
WL – 1.0
⎯
WL – 1.0
⎯
nCK
ODT turn-on Latency
ODTLon
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
ODT turn-off Latency
ODTLoff
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
ODTLcnw
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
ODTLcwn4
⎯
4 + ODTLoff
⎯
4 + ODTLoff
nCK
ODTLcwn8
⎯
6 + ODTLoff
⎯
6 + ODTLoff
nCK
ODTH4
4
⎯
4
⎯
nCK
RTT dynamic change skew
Pr
ODT Latency for changing from
RTT_Nom to RTT_WR
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODT high time without WRIT
command or with WRIT command
and BC4
ODT high time with WRIT
command and BL8
6
⎯
6
⎯
nCK
tADC
0.3
0.7
0.3
0.7
tCK (avg) 12
512
⎯
512
⎯
nCK
tZQoper
256
⎯
256
⎯
nCK
tZQCS
TBD
Power-up and reset calibration time tZQinit
Normal operation full calibration
time
Normal operation short calibration
time
Write Leveling Characteristics
Parameter
Symbol
⎯
TBD
⎯
nCK
min.
max.
Unit
Notes
40
⎯
nCK
3
tWLDQSEN
25
⎯
nCK
3
tWLS
0.15
⎯
tCK (avg)
0.15
⎯
tCK (avg)
tWLMRD
tWLH
Write leveling output delay
tWLO
0
9
Write leveling output error
tWLOE
0
2
Preliminary Data Sheet E0966E60 (Ver. 6.0)
45
ct
First DQS pulse rising edge after write
leveling mode is programmed
DQS, /DQS delay after write leveling
mode is programmed
Write leveling setup time from rising CK,
/CK crossing to rising DQS, /DQS crossing
Write leveling hold time from rising DQS,
/DQS crossing to rising CK, /CK crossing
u
od
ODTH8
ns
ns
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
L
EO
Notes for AC Electrical Characteristics
Notes: 1. Actual value dependent upon measurement level definitions that are TBD.
2. Commands requiring locked DLL are: READ (and READA) and synchronous ODT commands.
3. The max values are system dependent.
4. WR as programmed in mode register.
5. Value must be rounded-up to next integer value.
6. There is no maximum cycle time limit besides the need to satisfy the refresh interval, tREFI.
7. ODT turn on time (min.) is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time (max.) is when the ODT resistance is fully on. Both are measured from ODTLon.
8. ODT turn-off time (min.) is when the device starts to turn-off ODT resistance. ODT turn-off time (max.) is
when the bus is in high impedance. Both are measured from ODTLoff.
9. tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR/tCK to the next integer.
10. WR in clock cycles as programmed in MR0.
11. The maximum postamble is bound by tHZDQS(max.)
12. Output timing deratings are relative to the SDRAM input clock. When the device is operated with input
clock jitter, this parameter needs to be derated by TBD.
13. Value is only valid for RON34.
14. Single ended signal parameter. Refer to the section of tLZ (DQS), tLZ (DQ), tHZ (DQS), tHZ (DQ) Notes
for definition and measurement method.
15. tREFI depends on operating case temperature (TC).
16. tIS(base) and tIH(base) values are for 1V/ns command/address single-ended slew rate and 2V/ns CK,
/CK differential slew rate. Note for DQ and DM signals, VREF(DC) = VREFDQ(DC). For input only pins
except /RESET, VREF(DC) = VREFCA(DC). See Address / Command Setup, Hold and Derating section
17. tDS(base) and tDH(base) values are for 1V/ns DQ single-ended slew rate and 2V/ns DQS, /DQS
differential slew rate. Note for DQ and DM signals, VREF(DC) = VREFDQ(DC). For input only pins except
/RESET, VREF(DC) = VREFCA(DC). See Data Setup, Hold and Slew Rate Derating section.
18. Start of internal write transaction is definited as follows:
For BL8 (fixed by MRS and on- the-fly): Rising clock edge 4 clock cycles after WL.
For BC4 (on-the-fly): Rising clock edge 4 clock cycles after WL.
For BC4 (fixed by MRS): Rising clock edge 2 clock cycles after WL.
19. The maximum preamble is bound by tLZDQS(max.)
20. CKE is allowed to be registered low while operations such as row activation, precharge, auto precharge or
refresh are in progress, but power-down IDD spec will not be applied until finishing those operations.
21. Although CKE is allowed to be registered low after a refresh command once tREFPDEN(min.) is satisfied,
there are cases where additional time such as tXPDLL(min.) is also required. See Figure Power-Down
Entry/Exit Clarifications - Case 2.
22. tJIT(duty) = ± { 0.07 × tCK(avg) – [(0.5 - (min (tCH(avg), tCL(avg))) × tCK(avg)] }.
For example, if tCH/tCL was 0.48/0.52, tJIT(duty) would calculate out to ±125ps for DDR3-800.
The tCH(avg) and tCL(avg) values listed must not be exceeded.
23. These parameters are measured from a command/address signal (CKE, /CS, /RAS, /CAS, /WE, ODT,
BA0, A0, A1, etc.) transition edge to its respective clock signal (CK, /CK) crossing. The spec values are
not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are
relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24 These parameters are measured from a data strobe signal ((L/U/T)DQS, /DQS) crossing to its respective
clock signal (CK, /CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e.
tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these parameters
should be met whether clock jitter is present or not.
25. These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge
to its respective data strobe signal ((L/U/T)DQS/DQS) crossing.
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
46
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
26. For these parameters, the DDR3 SDRAM device is characterized and verified to support
tnPARAM [nCK] = RU{tPARAM [ns] / tCK(avg)}, which is in clock cycles, assuming all input clock jitter
specifications are satisfied.
For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock
jitter specifications are met. This means: For DDR3-800 6-6-6, of which tRP = 15ns, the device will
support tnRP =RU{tRP / tCK(avg)} = 6, i.e. as long as the input clock jitter specifications are met, prechar
ge command at Tm and active command at Tm+6 is valid even if (Tm+6 − Tm) is less than 15ns due to
input clock jitter.
27. These parameters should be the larger of the two values, analog (ns) and number of clocks (nCK).
L
EO
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
47
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Clock Jitter [DDR3-1333]
-DG, -DJ
Data rate (Mbps)
1333
Symbol
min.
max.
Unit
Average clock period
tCK (avg)
1500
3333
ps
1
Absolute clock period
tCK (abs)
tCK(avg)min +
tJIT(per)min
tCK(avg)max+
tJIT(per)max
ps
2
Clock period jitter
tJIT (per)
−80
80
ps
6
Clock period jitter during DLL locking
period
tJIT (per, lck)
−70
70
ps
6
Cycle to cycle period Jitter
tJIT (cc)
⎯
160
ps
7
Cycle to cycle clock period jitter
during DLL locking period
tJIT (cc, lck)
⎯
140
ps
7
Cumulative error across 2 cycles
tERR (2per)
TBD
TBD
ps
8
Cumulative error across 3 cycles
tERR (3per)
TBD
TBD
ps
8
Cumulative error across 4 cycles
tERR (4per)
TBD
TBD
ps
8
Cumulative error across 5 cycles
tERR (5per)
TBD
TBD
ps
8
tERR (6-10per)
TBD
TBD
ps
tERR (11-50per)
TBD
TBD
ps
L
EO
Parameter
Cumulative error across
n = 6, 7, 8, 9, 10 cycles
Cumulative error across
n = 11, 12,…49, 50 cycles
Notes
8
8
tCH (avg)
0.47
0.53
tCK (avg)
3
Average low pulse width
tCL (avg)
0.47
0.53
tCK (avg)
4
tJIT (duty)
−60
60
ps
5
Duty cycle jitter
Pr
Average high pulse width
Clock Jitter [DDR3-1066, 800]
Data rate (Mbps)
-AC, -AE, -AG
-8A, -8C
1066
800
u
od
Symbol
min.
max.
min.
max.
Unit
Notes
Average clock period
tCK (avg)
1875
3333
2500
3333
ps
1
Absolute clock period
tCK (abs)
tCK(avg)min + tCK(avg)max+ tCK(avg)min + tCK(avg)max+
ps
tJIT(per)min tJIT(per)max tJIT(per)min tJIT(per)max
2
Clock period jitter
tJIT (per)
−90
90
−100
100
ps
6
Clock period jitter during
DLL locking period
tJIT
(per, lck)
−80
80
−90
90
ps
6
Cycle to cycle period jitter
tJIT (cc)
⎯
180
⎯
200
ps
7
Cycle to cycle clock period jitter
during DLL locking period
tJIT (cc, lck) ⎯
160
⎯
180
ps
7
Cumulative error across 2 cycles
tERR (2per) TBD
TBD
TBD
TBD
ps
8
Cumulative error across 3 cycles
tERR (3per) TBD
TBD
TBD
Cumulative error across 4 cycles
tERR (4per) TBD
TBD
TBD
Cumulative error across 5 cycles
tERR (5per) TBD
TBD
TBD
Cumulative error across
n=6,7,8,9,10 cycles
Cumulative error across
n=11, 12,…49,50 cycles
tERR
(6-10per)
tERR
(11-50per)
TBD
TBD
TBD
TBD
TBD
Average high pulse width
tCH (avg)
0.47
Average low pulse width
tCL (avg)
Duty cycle jitter
tJIT (duty)
ct
Parameter
TBD
ps
8
TBD
ps
8
TBD
ps
8
TBD
ps
TBD
TBD
ps
0.53
0.47
0.53
tCK (avg)
3
0.47
0.53
0.47
0.53
tCK (avg)
4
−75
75
−100
100
ps
5
Preliminary Data Sheet E0966E60 (Ver. 6.0)
48
8
8
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Notes: 1. tCK (avg) is calculated as the average clock period across any consecutive 200cycle window, where each
clock period is calculated from rising edge to rising edge.
N
Σ
tCKj
N
j=1
N = 200
L
EO
2. tCK (abs) is the absolute clock period, as measured from one rising edge to the next consecutive rising
edge. tCK (abs) is not subject to production test.
3. tCH (avg) is defined as the average high pulse width, as calculated across any consecutive 200 high
pulses.
N
Σ
(N × tCK(avg))
tCHj
j=1
N = 200
4. tCL (avg) is defined as the average low pulse width, as calculated across any consecutive 200 low pulses.
N
Σ
(N × tCK(avg))
tCLj
j=1
N = 200
ct
u
od
Pr
5. tJIT (duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of
any single tCH from tCH (avg). tCL jitter is the largest deviation of any single tCL from tCL (avg).
tJIT (duty) is not subject to production test.
tJIT (duty) = Min./Max. of {tJIT (CH), tJIT (CL)}, where:
tJIT (CH) = {tCHj- tCH (avg) where j = 1 to 200}
tJIT (CL) = {tCLj- tCL (avg) where j = 1 to 200}
6. tJIT (per) is defined as the largest deviation of any single tCK from tCK (avg).
tJIT (per) = Min./Max. of { tCKj − tCK (avg) where j = 1 to 200}
tJIT (per) defines the single period jitter when the DLL is already locked. tJIT (per, lck) uses the same
definition for single period jitter, during the DLL locking period only. tJIT (per) and tJIT (per, lck) are not
subject to production test.
7. tJIT (cc) is defined as the absolute difference in clock period between two consecutive clock cycles:
tJIT (cc) = Max. of {tCKj+1 - tCKj}
tJIT (cc) is defines the cycle when the DLL is already locked. tJIT (cc, lck) uses the same definition for
cycle to cycle jitter, during the DLL locking period only. tJIT (cc) and tJIT (cc, lck) are not subject to
production test.
8. tERR (nper) is defined as the cumulative error across n multiple consecutive cycles from tCK (avg).
tERR (nper) is not subject to production test.
9. These parameters are specified per their average values, however it is understood that the following
relationship between the average timing and the absolute instantaneous timing hold at all times.
(minimum and maximum of spec values are to be used for calculations in the table below.)
Parameter
Symbol
min.
max.
Absolute clock period
tCK (abs)
tCK (avg), min. + tJIT (per),min.
tCK (avg), max. + tJIT (per),max. ps
tCH (avg), min. × tCK (avg),min.
+ tJIT (duty),min.
tCL (avg), min. × tCK (avg),min.
+ tJIT (duty),min.
tCH (avg), max. × tCK (avg),max.
ps
+ tJIT (duty),max.
tCL (avg), max. × tCK (avg),max.
ps
+ tJIT (duty),max.
Absolute clock high pulse
width
Absolute clock low pulse
width
tCH (abs)
tCL (abs)
Preliminary Data Sheet E0966E60 (Ver. 6.0)
49
Unit
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
CK
/CK
CKE
Clock
generator
Block Diagram
L
EO
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
Control logic
Memory cell array
Bank 0
Sense amp.
Column decoder
Column
address
buffer
and
burst
counter
Pr
/CS
/RAS
/CAS
/WE
Command decoder
Mode
register
Row
address
buffer
and
refresh
counter
Row decoder
A0 to A12,
BA0, BA1, BA2
Data control circuit
Latch circuit
DQS, /DQS
u
od
CK, /CK
DLL
Input & Output buffer
TDQS, /TDQS
ODT
DM
DQ
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
50
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Pin Function
CK, /CK (input pins)
CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK
(both directions of crossing).
/CS (input pin)
All commands are masked when /CS is registered high. /CS provides for external rank selection on systems with
multiple ranks. /CS is considered part of the command code.
L
EO
/RAS, /CAS, /WE (input pins)
/RAS, /CAS and /WE (along with /CS) define the command being entered.
A0 to A12 (input pins)
Provided the row address for active commands and the column address for read/write commands to select one
location out of the memory array in the respective bank. (A10(AP) and A12(/BC) have additional functions, see
below) The address inputs also provide the op-code during mode register set commands.
[Address Pins Table]
Address (A0 to A12)
Part number
Page size
Row address (RA)
Column address (CA)
EDJ5304BASE
1KB
AX0 to AX12
AY0 to AY9, AY11
AX0 to AX12
AY0 to AY9
EDJ5308BASE
Pr
EDJ5316BASE
Notes
2KB
AX0 to AX11
AY0 to AY9
u
od
A10(AP) (input pin)
A10 is sampled during read/write commands to determine whether auto precharge should be performed to the
accessed bank after the read/write operation. (high: auto precharge; low: no auto precharge)
A10 is sampled during a precharge command to determine whether the precharge applies to one bank (A10 = low)
or all banks (A10 = high). If only one bank is to be precharged, the bank is selected by bank addresses (BA).
A12(/BC) (input pin)
A12 is sampled during read and write commands to determine if burst chop (on-the-fly) will be performed.
(A12 = high: no burst chop, A12 = low: burst chopped.) See command truth table for details.
BA0 to BA2 (input pins)
BA0, BA1 and BA2 define to which bank an active, read, write or precharge command is being applied. BA0 and
BA1 also determine which mode register (MR0 to MR3) is to be accessed during a MRS cycle.
[Bank Select Signal Table]
BA0
BA1
L
L
Bank 1
H
L
ct
Bank 0
BA2
L
L
Bank 2
L
H
Bank 3
H
H
Bank 4
L
L
Bank 5
H
L
H
Bank 6
L
H
H
Bank 7
H
H
H
Remark: H: VIH. L: VIL.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
51
L
L
H
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
CKE (input pin)
CKE high activates, and CKE low deactivates, internal clock signals and device input buffers and output drivers.
Taking CKE low provides precharge power-down and self-refresh operation (all banks idle), or active power-down
(row active in any bank). CKE is asynchronous for self-refresh exit. After VREF has become stable during the
power-on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper
self-refresh entry and exit, VREF must be maintained to this input. CKE must be maintained high throughout read
and write accesses. Input buffers, excluding CK, /CK, ODT and CKE are disabled during power-down. Input buffers,
excluding CKE, are disabled during self-refresh.
L
EO
DM, DMU, DML (input pins)
DM is an input mask signal for write data. Input data is masked when DM is sampled high coincident with that input
data during a write access. DM is sampled on both edges of DQS. For ×8 configuration, the function of DM or
TDQS, /TDQS is enabled by mode register A11 setting in MR1.
DQ, DQU, DQL (input/output pins)
Bi-directional data bus.
DQS, /DQS, DQSU, /DQSU, DQSL, /DQSL (input/output pins)
Output with read data, input with write data. Edge-aligned with read data, center-aligned with write data.
The data strobe DQS is paired with differential signal /DQS to provide differential pair signaling to the system during
READs and WRITEs.
Pr
TDQS, /TDQS (output pins)
TDQS and /TDQS is applicable for ×8 configuration only. When enabled via mode register A11 = 1 in MR1, DRAM
will enable the same termination resistance function on TDQS, /TDQS as is applied to DQS, /DQS. When disabled
via mode register A11 = 0 in MR1, DM/TDQS will provide the data mask function and /TDQS is not used.
In ×4/×16 configuration, the TDQS function must be disabled via mode register A11 = 0 in MR1.
u
od
/RESET (input pin)
/RESET is a CMOS rail to rail signal with DC high and low at 80% and 20% of VDD (1.20V for DC high and 0.30V
for DC low).
It is negative active signal (active low) and is referred to GND. There is no termination required on this signal. It will
be heavily loaded across multiple chips. /RESET is destructive to data contents.
ODT (input pins)
ODT (registered high) enables termination resistance internal to the DDR3 SDRAM. When enabled, ODT is only
applied to each DQ, DQS, /DQS, DM/TDQS, NU(/TDQS) (when TDQS is enabled via mode register A11 = 1 in MR1)
signal for ×4/×8 configuration. For ×16 configuration ODT is applied to each DQ, DQSU, /DQSU, DQSL, /DQSL,
DMU, and DML signal. The ODT pin will be ignored if the mode register (MR1) is programmed to disable ODT.
ZQ (supply)
Reference pin for ZQ calibration.
ct
VDD, VSS, VDDQ, VSSQ (power supply)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output
buffers.
VREFCA, VREFDQ (power supply)
Reference voltage
Preliminary Data Sheet E0966E60 (Ver. 6.0)
52
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Command Operation
Command Truth Table
The DDR3 SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.
CKE
Symbol
Mode register set
MRS
H
H
L
L
L
L
BA
op-code
Auto-refresh
REF
H
H
L
L
L
H
V
Self-refresh entry
SELF
H
L
L
L
L
H
Self-refresh exit
SREX
L
H
H
V
V
V
L
H
L
H
H
H
V
V
V
V
Single bank precharge
PRE
H
H
L
L
H
L
BA
V
L
V
Precharge all banks
PALL
H
H
L
L
H
L
V
V
H
V
Bank activate
ACT
H
H
L
L
H
H
BA
RA
Write (Fixed BL)
WRIT
H
H
L
H
L
L
BA
V
L
CA
Write (BC4, on the fly)
WRS4
H
H
L
H
L
L
BA
L
L
CA
Write (BL8, on the fly)
WRS8
H
H
L
H
L
L
BA
H
L
CA
WRITA
H
H
L
H
L
L
BA
V
H
CA
WRAS4 H
H
L
H
L
L
BA
L
H
CA
WRAS8 H
H
L
H
L
L
BA
H
H
CA
READ
H
H
L
H
L
H
BA
V
L
CA
RDS4
H
H
L
H
L
H
BA
L
L
CA
RDS8
H
H
L
H
L
H
BA
H
L
CA
READA H
H
RDAS4
H
H
RDAS8
H
H
L
EO
Function
Previous Current
cycle
cycle
/CS
Read (Fixed BL)
Read (BC4, on the fly)
Read (BL8, on the fly)
A12
(/BC)
A10
(AP)
Address
V
V
V
V
V
V
V
6, 8, 11
V
V
V
V
6, 7, 8,
11
NOP
H
H
Device deselect
DESL
H
H
Power-down mode entry
PDEN
H
L
H
L
Power-down mode exit
PDEX
L
H
L
H
L
H
L
H
BA
V
H
CA
L
H
L
H
BA
L
H
CA
L
H
L
H
BA
H
H
CA
L
H
H
H
V
V
V
V
9
H
×
×
×
×
×
×
×
10
H
V
V
V
V
V
V
V
5, 11
L
H
H
H
V
V
V
V
H
V
V
V
V
V
V
V
L
H
H
H
V
V
V
V
×
H
×
×
L
×
ZQ calibration long
ZQCL
H
H
L
H
H
L
×
ZQ calibration short
ZQCS
H
H
L
H
H
L
×
Remark: H = VIH. L = VIL. × = VIH or VIL. V = Valid
BA = Bank addresses. RA = Row Address. CA = Column Address.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
53
5, 11
ct
No operation
Notes
12
u
od
Read with auto precharge
(Fixed BL)
Read with auto precharge
(BC4, on the fly)
Read with auto precharge
(BL8, on the fly)
BA0 to
BA2
Pr
Write with auto precharge
(Fixed BL)
Write with auto precharge
(BC4, on the fly)
Write with auto precharge
(BL8, on the fly)
/RAS /CAS /WE
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
L
EO
Notes: 1. All DDR3 commands are defined by states of /CS, /RAS, /CAS, /WE and CKE at the rising edge of the
clock. The most significant bit (MSB) of BA, RA, and CA are device density and configuration dependent.
2. /RESET is an active low asynchronous signal that must be driven high during normal operation
3. Bank Addresses (BA) determine which bank is to be operated upon. For MRS, BA selects an mode
register.
4. Burst READs or WRITEs cannot be terminated or interrupted and fixed/on the fly BL will be defined by
MRS.
5. The power-down mode does not perform any refresh operations.
6. The state of ODT does not affect the states described in this table. The ODT function is not available
during self-refresh.
7. Self-refresh exit is asynchronous.
8. VREF (Both VREFDQ and VREFCA) must be maintained during self-refresh operation.
9. The No Operation command (NOP) should be used in cases when the DDR3 SDRAM is in an idle or a
wait state. The purpose of the NOP command is to prevent the DDR3 SDRAM from registering any
unwanted commands between operations. A NOP command will not terminate a previous operation that is
still executing, such as a burst read or write cycle.
10. The DESL command performs the same function as a NOP command.
11. Refer to the CKE Truth Table for more detail with CKE transition.
12. No more than 4 banks may be activated in a rolling tFAW window. Converting to clocks is done by
dividing tFAW (ns) by tCK (ns) and rounding up to next integer value. As an example of the rolling
window, if (tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more
than three further activate commands may be issued in clock N+1 through N+9.
Pr
No Operation Command [NOP]
The No Operation command (NOP) should be used in cases when the DDR3 SDRAM is in an idle or a wait state.
The purpose of the NOP command is to prevent the DDR3 SDRAM from registering any unwanted commands
between operations. A NOP command will not terminate a previous operation that is still executing, such as a burst
read or write cycle.
u
od
The no operation (NOP) command is used to instruct the selected DDR3 SDRAM to perform a NOP (/CS low, /RAS,
/CAS, /WE high). This prevents unwanted commands from being registered during idle or wait states. Operations
already in progress are not affected.
Device Deselect Command [DESL]
The deselect function (/CS high) prevents new commands from being executed by the DDR3 SDRAM. The DDR3
SDRAM is effectively deselected. Operations already in progress are not affected.
Mode Register Set Command [MR0 to MR3]
The mode registers are loaded via row address inputs. See mode register descriptions in the Programming the
Mode Register section. The mode register set command can only be issued when all banks are idle, and a
subsequent executable command cannot be issued until tMRD is met.
ct
Bank Activate Command [ACT]
This command is used to open (or activate) a row in a particular bank for a subsequent access. The values on the
BA inputs select the bank, and the address provided on row address inputs selects the row. This row remains active
(or open) for accesses until a precharge command is issued to that bank. A precharge command must be issued
before opening a different row in the same bank.
Note: No more than 4 banks may be activated in a rolling tFAW window. Converting to clocks is done by dividing
tFAW (ns) by tCK (ns) and rounding up to next integer value. As an example of the rolling window, if
(tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more than three further
activate commands may be issued in clock N+1 through N+9.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
54
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Read Command [READ, RDS4, RDS8, READA, RDAS4, RDAS8]
The read command is used to initiate a burst read access to an active row. The values on the BA inputs select the
bank, and the address provided on column address inputs selects the starting column location. The value on input
A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be
precharged at the end of the read burst; if auto precharge is not selected, the row will remain open for subsequent
accesses.
L
EO
Write Command [WRIT, WRS4, WRS8, WRITA, WRAS4, WRAS8]
The write command is used to initiate a burst write access to an active row. The values on the BA inputs select the
bank, and the address provided on column address inputs selects the starting column location. The value on input
A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be
precharged at the end of the write burst; if auto precharge is not selected, the row will remain open for subsequent
accesses. Input data appearing on the DQ is written to the memory array subject to the DM input logic level
appearing coincident with the data. If a given DM signal is registered low, the corresponding data will be written to
memory; if the DM signal is registered high, the corresponding data inputs will be ignored, and a write will not be
executed to that byte/column location.
Precharge Command [PRE, PALL]
The precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row access a specified time (tRP) after the precharge command is issued.
Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be
precharged, inputs BA select the bank. Otherwise BA are treated as "Don't Care." Once a bank has been
precharged, it is in the idle state and must be activated prior to any read or write commands being issued to that
bank. A precharge command will be treated as a NOP if there is no open row in that bank (idle state), or if the
previously open row is already in the process of precharging.
Pr
ct
u
od
Auto precharge Command [READA, WRITA]
Before a new row in an active bank can be opened, the active bank must be precharged using either the precharge
command or the auto precharge function. When a read or a write command is given to the DDR3 SDRAM, the /CAS
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at
the earliest possible moment during the burst read or write cycle. If A10 is low when the read or write command is
issued, then normal read or write burst operation is executed and the bank remains active at the completion of the
burst sequence. If A10 is high when the read or write command is issued, then the auto precharge function is
engaged. During auto precharge, a read command will execute as normal with the exception that the active bank
will begin to precharge on the rising edge which is /CAS latency (CL) clock cycles before the end of the read burst.
(This timing is equal to the rising edge which is (AL* + BL/2) cycles later from the read with auto precharge
command.)
Auto precharge can also be implemented during write commands. The precharge operation engaged by the Auto
precharge command will not begin until the last data of the burst write sequence is properly stored in the memory
array.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent
upon /CAS latency) thus improving system performance for random data access. The tRAS lockout circuit internally
delays the Precharge operation until the array restore operation has been completed so that the auto precharge
command may be issued with any read or write command.
Note: AL (Additive Latency), refer to Posted /CAS description in the Register Definition section.
Auto-Refresh Command [REF]
Auto-refresh is used during normal operation of the DDR3 SDRAM and is analogous to /CAS-before-/RAS (CBR)
refresh in FPM/EDO DRAM. This command is nonpersistent, so it must be issued each time a refresh is required.
The addressing is generated by the internal refresh controller. This makes the address bits a "Don't Care" during an
auto-refresh command.
A maximum of eight auto-refresh commands can be posted to any given DDR3, meaning that the maximum absolute
interval between any auto-refresh command and the next auto-refresh command is 9 × tREFI. This maximum
absolute interval is to allow DDR3 output drivers and internal terminators to automatically recalibrate compensating
for voltage and temperature changes.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
55
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
L
EO
Self-Refresh Command [SELF]
The self-refresh command can be used to retain data in the DDR3, even if the rest of the system is powered down.
When in the self-refresh mode, the DDR3 retains data without external clocking. The self-refresh command is
initiated like an auto-refresh command except CKE is disabled (low). The DLL is automatically disabled upon
entering self-refresh and is automatically enabled and reset upon exiting self-refresh. The active termination is also
disabled upon entering self-refresh and enabled upon exiting self-refresh. (512 clock cycles must then occur before
a read command can be issued). Input signals except CKE are "Don't Care" during self-refresh. The procedure for
exiting self-refresh requires a sequence of commands. First, CK and /CK must be stable prior to CKE going back
high. Once CKE is high, the DDR3 must have NOP commands issued for tXSDLL because time is required for the
completion of any internal refresh in progress. A simple algorithm for meeting both refresh, DLL requirements and
out-put calibration is to apply NOPs for 512 clock cycles before applying any other command to allow the DLL to lock
and the output drivers to recalibrate.
ZQ calibration Command [ZQCL, ZQCS]
ZQ calibration command (short or long) is used to calibrate DRAM RON and ODT values over PVT.
ZQ Calibration Long (ZQCL) command is used to perform the initial calibration during power-up initialization
sequence.
ZQ Calibration Short (ZQCS) command is used to perform periodic calibrations to account for VT variations.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self-refresh.
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
56
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
CKE Truth Table
CKE
Current state*
2
Power-down
Self-refresh
*3
Current
*1
cycle (n)
Command (n)
/CS, /RAS, /CAS, /WE
Operation (n)
L
L
×
Maintain power-down
14, 15
L
H
DESL or NOP
Power-down exit
11, 14
L
L
×
Maintain self-refresh
15, 16
L
H
DESL or NOP
Self-refresh exit
8, 12, 16
Active power-down entry
11, 13, 14
L
EO
Previous
1
cycle (n-1)*
Bank Active
H
L
DESL or NOP
*3
Notes
Reading
H
L
DESL or NOP
Power-down entry
11, 13, 14, 17
Writing
H
L
DESL or NOP
Power-down entry
11, 13, 14, 17
Precharging
H
L
DESL or NOP
Power-down entry
11, 13, 14, 17
Refreshing
H
L
DESL or NOP
Precharge power-down entry
11
All banks idle
H
L
DESL or NOP
Precharge power-down entry
11, 13, 14, 18
H
L
REFRESH
Self-refresh entry
9, 13, 18
H
H
Refer to the Command Truth Table
Any state other than
listed above
10
ct
u
od
Pr
Remark: H = VIH. L = VIL. × = Don’t care
Notes: 1. CKE (n) is the logic state of CKE at clock edge n; CKE (n−1) is the state of CKE at the previous clock
edge.
2. Current state is the state of the DDR3 SDRAM immediately prior to clock edge n.
3. Command (n) is the command registered at clock edge n, and operation (n) is a result of Command (n).
ODT is not included here.
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this
document.
5. The state of ODT does not affect the states described in this table. The ODT function is not available
during self-refresh.
6. CKE must be registered with the same value on tCKE (min.) consecutive positive clock edges. CKE must
remain at the valid input level the entire time it takes to achieve the tCKE (min.) clocks of registration.
Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS +
tCKE (min.) + tIH.
7. DESL and NOP are defined in the Command Truth Table.
8. On self-refresh exit, DESL or NOP commands must be issued on every clock edge occurring during the
tXS period. Read or ODT command may be issued only after tXSDLL is satisfied.
9. Self-refresh mode can only be entered from the all banks idle state.
10. Must be a legal command as defined in the Command Truth Table.
11. Valid commands for power-down entry and exit are NOP and DESL only.
12. Valid commands for self-refresh exit are NOP and DESL only.
13. Self-refresh can not be entered while read or write operations, (extended) mode register set operations or
precharge operations are in progress. See section Power-Down and self-refresh Command for a detailed
list of restrictions.
14. The power-down does not perform any refresh operations.
15. “×” means “don’t care” (including floating around VREF) in self-refresh and power-down. It also applies to
address pins.
16. VREF (Both VREFDQ and VREFCA) must be maintained during self-refresh operation.
17. If all banks are closed at the conclusion of the read, write or precharge command, the precharge powerdown is entered, otherwise active power-down is entered.
18. Idle state means that all banks are closed (tRP, tDAL, etc. satisfied), no data bursts are in progress. CKE
is high and all timings from previous operation are satisfied (tMRD, tMOD, tRFC, tZQinit, tZQoper, tZQCS,
etc.) as well as all self-refresh exit and power-down exit parameters are satisfied (tXS, tXP, tXPDLL, etc).
Preliminary Data Sheet E0966E60 (Ver. 6.0)
57
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Simplified State Diagram
CKE_L
POWER
APPLIED
POWER
ON
RESET
PROCEDURE
MRS, MPR,
WRITE
LEVELING
INITIALIZATION
MRS
FROM ANY
STATE
SELFX
ZQCL
ZQCS
RESET
SELF
REFRESH
SELF
REF
ZQ
CALIBRATION
IDLE
L
EO
ACT
ACTIVE
POWER
DOWN
REFRESHING
PDEN
PDEX
ACTIVATING
PRECHARGE
POWER
DOWN
CKE_L
PDEX
CKE_L
PDEN
BANK
ACTIVE
Pr
WRIT
READ
WRIT
WRITA
READ
WRITING
READ
READA
READING
WRIT
READA
u
od
WRITA
WRITA
READA
PRE, PALL
WRITING
READING
PRE, PALL
PRE, PALL
PRECHARGING
Automatic sequence
Command sequence
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
58
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
RESET and Initialization Procedure
Power-Up and Initialization Sequence
L
EO
1. Apply power (/RESET is recommended to be maintained below 0.2 × VDD, (all other inputs may be undefined). )
/RESET needs to be maintained for minimum 200μs with stable power. CKE is pulled low anytime before
/RESET being de-asserted (min. time 10ns). The power voltage ramp time between 300mV to VDD (min.) must
be no greater than 200ms; and during the ramp, VDD > VDDQ and (VDD − VDDQ) < 0.3V.
• VDD and VDDQ are driven from a single power converter output
AND
• The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD
on one side and must be larger than or equal to VSSQ and VSS on the other side. In addition, VTT is limited to
0.95V max once power ramp is finished,
AND
• VREF tracks VDDQ/2.
OR
ct
u
od
Pr
• Apply VDD without any slope reversal before or at the same time as VDDQ.
• Apply VDDQ without any slope reversal before or at the same time as VTT and VREF.
• The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD
on one side and must be larger than or equal to VSSQ and VSS on the other side.
2. After /RESET is de-asserted, wait for another 500μs until CKE become active. During this time, the DRAM will
start internal state initialization; this will be done independently of external clocks.
3. Clocks (CK, /CK) need to be started and stabilized for at least 10ns or 5tCK (which is larger) before CKE goes
active. Since CKE is a synchronous signal, the corresponding set up time to clock (tIS) must be met. Also a NOP
or DESL command must be registered (with tIS set up time to clock) before CKE goes active. Once the CKE
registered “high” after Reset, CKE needs to be continuously registered high until the initialization sequence is
finished, including expiration of tDLLK and tZQinit.
4. The DDR3 SDRAM will keep its on-die termination in high-impedance state during /RESET being asserted at
least until CKE being registered high. Therefore, the ODT signal may be in undefined state until tIS before CKE
being registered high. After that, the ODT signal must be kept inactive (low) until the power-up and initialization
sequence is finished, including expiration of tDLLK and tZQinit.
5. After CKE being registered high, wait minimum of tXPR, before issueing the first MRS command to load mode
register. (tXPR = max. (tXS ; 5 × tCK)
6. Issue MRS command to load MR2 with all application settings. (To issue MRS command for MR2, provide low to
BA0 and BA2, high to BA1.)
7. Issue MRS command to load MR3 with all application settings. (To issue MRS command for MR3, provide low to
BA2, high to BA0 and BA1.)
8. Issue MRS command to load MR1 with all application settings and DLL enabled. (To issue DLL Enable
command, provide low to A0, high to BA0 and low to BA1 and BA2).
9. Issue MRS command to load MR0 with all application settings and DLL reset. (To issue DLL reset command,
provide high to A8 and low to BA0 to BA2).
10. Issue ZQCL command to start ZQ calibration.
11. Wait for both tDLLK and tZQinit completed.
12. The DDR3 SDRAM is now ready for normal operation.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
59
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Ta
Tb
Tc
Td
Te
Tf
Tg
Th
Ti
Tj
Tk
CK, /CK
max. (10 ns; 5tCK)
VDD, VDDQ
200μs
500μs
/RESET
tIS
10ns
CKE
L
EO
Command
2
tXPR*
tIS
*1
BA
tDLLK
tMRD
tMRD
tMRD
tMOD
MRS
MRS
MRS
MRS
MR2
MR3
MR1
MR0
tZQinit
ZQcal
tIS
ODT
DRAM_RTT
Notes: 1. From time point "Td" until "Tk", NOP or DESL commands must be
applied between MRS and ZQcal commands.
2. tXPR = max. (tXS; 5tCK)
: VIH or VIL
Reset and Initialization Sequence at Power-On Ramping
Reset and Initialization with Stable Power
Ta
Tb
Tc
CK, /CK
u
od
Pr
The following sequence is required for /RESET at no power interruption initialization.
1. Assert /RESET below 0.2 × VDD anytime when reset is needed (all other inputs may be undefined). /RESET
needs to be maintained for minimum 100ns. CKE is pulled low before /RESET being de-asserted (minimum time
10ns).
2. Follow Power-Up Initialization Sequence steps 2 to 12.
3. The reset sequence is now completed; DDR3 SDRAM is ready for normal operation.
Td
Te
Tf
Tg
Th
Ti
Tj
Tk
max. (10 ns; 5tCK)
VDD, VDDQ
100ns
500μs
/RESET
10ns
CKE
tIS
2
Command
*1
BA
tDLLK
tMRD
tMRD
tMRD
tMOD
MRS
MRS
MRS
MRS
MR2
MR3
MR1
MR0
tIS
ODT
tZQinit
ct
tXPR*
tIS
ZQCL
DRAM_RTT
Notes: 1. From time point "Td" until"Tk", NOP or DESL commands must be
applied between MRS and ZQCL commands.
2. tXPR = max. (tXS; 5tCK)
Reset Procedure at Power Stable Condition
Preliminary Data Sheet E0966E60 (Ver. 6.0)
60
: VIH or VIL
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Programming the Mode Register
L
EO
For application flexibility, various functions, features and modes are programmable in four mode registers, provided
by the DDR3 SDRAM, as user defined variables, and they must be programmed via a Mode Register Set (MRS)
command. As the default values of the Mode Registers (MR#) are not defined, content of mode registers must be
fully initialized and/or re-initialized, i.e. written, after Power-up and/or reset for proper operation. Also the contents of
the mode registers can be altered by re-executing the MRS command during normal operation. When programming
the mode registers, even if the user chooses to modify only a sub-set of the MRS fields, all address fields within the
accessed mode register must be redefined when the MRS command is issued. MRS command and DLL Reset
does not affect array contents, which means these commands can be executed any time after power-up without
affecting the array contents.
The mode register set command cycle time, tMRD is required to complete the write operation to the mode register
and is the minimum time required between two MRS commands. The MRS command to non-MRS command delay,
tMOD, is required for the DRAM to update the features except DLL reset and is the minimum time required from an
MRS command to a non-MRS command excluding NOP and DESL. The mode register contents can be changed
using the same command and timing requirements during normal operation as long as the DRAM is in idle state, i.e.
all banks are in the precharged state with tRP satisfied, all data bursts are completed and CKE is already high prior
to writing into the mode register. The mode registers are divided into various fields depending on the functionality
and/or modes.
Mode Register Set Command Cycle Time (tMRD)
tMRD is the minimum time required from an MRS command to the next MRS command. As DLL enable and DLL
reset are both MRS commands, tMRD is applicable between MRS to MR1 for DLL enable and MRS to MR0 for DLL
reset, and not tMOD.
/CK
Command
MRS
Pr
CK
NOP
MRS
NOP
tMRD
tMRD Timing
u
od
MRS Command to Non-MRS Command Delay (tMOD)
tMOD is the minimum time required from an MRS command to a non-MRS command excluding NOP and DESL.
Note that additional restrictions may apply, for example, MRS to MR0 for DLL reset followed by read.
/CK
CK
Command
MRS
NOP
tMOD
Updating
NOP
ct
Old
setting
non-MRS
New Setting
tMOD Timing
Preliminary Data Sheet E0966E60 (Ver. 6.0)
61
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
DDR3 SDRAM Mode Register 0 [MR0]
The mode register MR0 stores the data for controlling various operating modes of DDR3 SDRAM.
It controls burst length, read burst type, /CAS latency, test mode, DLL reset, WR and DLL control for precharge
power-down, which include various vendor specific options to make DDR3 SDRAM useful for various applications.
The mode register is written by asserting low on /CS, /RAS, /CAS, /WE, BA0 and BA1, while controlling the states of
address pins according to the table below.
BA2 BA1 BA0 A12 A11 A10 A9
0*1
0
PPD
WR
L
EO
0
BA1 BA0
A8
A7
DLL TM
A6
A5
A4
/CAS latency
A3
A2
A1
RBT CL
A0
BL
Address field
Mode register 0
Burst length
A8
DLL reset
A7
Mode
A3
Read burst type
0
No
0
Normal
0
Nibble sequential
1
Yes
1
Test
1
Interleave
A1
A0
BL
0
0
8 (Fixed)
4 or 8 (on the fly)
0
1
MRS mode
1
0
4 (Fixed)
1
1
Reserved
0
0
MR0
0
1
MR1
Write recovery for autoprecharge
/CAS latency
A10
A9
WR
A6
A5
A4
A2
Latency
Reserved
0
0
0
0
Reserved
1
0
MR2
A11
1
1
MR3
0
0
0
0
0
1
5*2
0
0
1
0
5
0
1
0
6 *2
0
1
0
0
6
0
1
1
7 *2
0
1
1
0
7
1
0
0
8 *2
1
0
0
0
8
1
0
1
10*2
1
0
1
0
9
1
1
0
12*2
1
1
0
0
10
1
1
1
Reserved
1
1
1
0
Reserved
A12 DLL Control for Precharge PD
0
Slow exit (DLL off)
1
Fast exit (DLL on)
Pr
Notes: 1. BA2 is reserved for future use and must be programmed to 0 during MRS.
2. WR (min.) (Write Recovery for autoprecharge) is determined by tCK (max.) and WR (max.) is determined by tCK (min.).
WR in clock cycles is calculated by dividing tWR (in ns) by tCK (in ns) and rounding up to the next integer
(WR (min.) [cycles] = roundup tWR (ns) / tCK (ns)).
(The WR value in the mode register must be programmed to be equal or larger than WR (min.)
This is also used with tRP to determine tDAL.
u
od
MR0 Programming
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
62
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
DDR3 SDRAM Mode Register 1 [MR1]
The Mode Register MR1 stores the data for enabling or disabling the DLL, output driver strength, RTT_Nom
impedance, additive latency, write leveling enable, TDQS enable and Qoff. The Mode Register 1 is written by
asserting low on /CS, /RAS, /CAS, /WE, high on BA0 and low on BA1, while controlling the states of address pins
according to the table below
BA2 BA1 BA0 A12 A11 A10 A9
0*1
1
Qoff TDQS 0*1
Rtt_Nom
A7
A11
TDQS enable
0
Disabled
1
Enabled
A6
A5
0*1 Level Rtt_Nom D.I.C
L
EO
0
A8
A4
A3
AL
A2
A9 A6 A2
RTT_Nom*5
0
0
0
ODT Disabled
0
0
1
RZQ/4
0
1
0
RZQ/2
0
1
1
RZQ/6
1
0
0
RZQ/12*4
Write leveling enable
1
0
1
RZQ/8*4
0
Disabled
1
1
0
Reserved
1
Enabled
1
1
1
Reserved
Pr
Qoff
0
Output buffers enabled
1
Output buffers disabled*2
Address field
DLL
Mode register 1
A0
DLL enable
0
Enable
1
Disable
Output driver
A4
A3
Additive Latency
A5
A1
impedance control
0
0
0 (AL disabled)
0
0
Reserved for RZQ/6
0
1
CL-1
0
1
RZQ/7
1
0
CL-2
1
0
RZQ/TBD
1
1
Reserved
1
1
RZQ/TBD
u
od
Notes: 1.
2.
3.
4.
5.
A0
Rtt_Nom D.I.C
A7
A12
A1
BA2, A8 and A10 are reserved for future use (RFU) and must be programmed to 0 during MRS.
Outputs disabled - DQ, DQS, /DQS.
RZQ = 240Ω
If RTT_Nom is used during writes, only the values RZQ/2, RZQ/4 and RAQ/6 are allowed.
In Write leveling Mode (MR1[bit7] = 1) with MR1[bit12]=1, all RTT_Nom settings are allowed;
in Write Leveling Mode (MR1[bit7] =1) with MR1[bit12]=0, only RTT_Nom settings of RZQ/2,
RZQ/4 and RZQ/6 are allowed
MR1 Programming
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
63
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
DDR3 SDRAM Mode Register 2 [MR2]
The Mode Register MR2 stores the data for controlling refresh related features, RTT_WR impedance and /CAS write
latency (CWL). The Mode Register 2 is written by asserting low on /CS, /RAS, /CAS, /WE, high on BA1 and low on
BA0, while con-trolling the states of address pins according to the table below.
BA2 BA1 BA0
0*1 1
A12
A11
A10
0*1
0
A9
A8
Rtt_WR
0*1
L
EO
A7
Self-refresh range
0
Normal self-refresh
1
Extend temperture
self-refresh
(Optional)
A7
A6
A5
SRT ASR
A4
A3
A2
A1
A0
PASR* 2
CWL
Address field
Mode register 2
Partial array self-refresh
Refresh array
A2
A1
A0
0
0
0
Full
0
0
1
Half
0
1
0
Quarter: Bank 0 and Bank 1 (BA [2:0] = 000, 001)
⎯
: Bank 0 to Bank 3
(BA [2:0] = 000, 001, 010, 011)
A6
Auto self-refresh method
0
1
1
1/8
: Bank 0
(BA [2:0] = 000)
0
Manual SR reference
(SRT)
1
0
0
3/4
: Bank 2 to Bank 7
(BA [2:0] = 010, 011, 100, 101,110 ,111)
1
0
1
Half
: Bank 4 to Bank 7
(BA [2:0] = 100, 101, 110, 111)
1
1
0
Quarter: Bank 6 and Bank 7 (BA [2:0] = 110, 111)
1
1
1
1/8
1
ASR enable
(Optional)
: Bank 7
A5
A4
A3
A10
A9
Rtt_WR
0
0
0
5 (tCK ≥ 2.5ns)
0
0
Dynamic ODT off (write does not
affect Rtt value)
0
0
1
6 (2.5ns > tCK ≥ 1.875ns)
0
1
0
7 (1.875ns > tCK ≥ 1.5ns)
0
1
RZQ/4
0
1
1
8 (1.5ns > tCK ≥ 1.25ns)
1
0
RZQ/2
1
1
Reserved
(BA [2:0] = 111)
CAS write Latency (CWL)
Pr
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
Notes: 1. BA2 is RFU and must be programmed to 0 during MRS.
u
od
2. Optiona in DDR3 SDRAM: If PASR (Partial Array Self-Refresh) is enabled, data located in areas of the array beyond
the specified address range will be lost if self-refresh is entered. Data integrity will be maintained if tREF conditions are
met and no self-refresh command is issued.
MR2 Programming
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
64
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
DDR3 SDRAM Mode Register 3 [MR3]
The Mode Register MR3 controls Multi Purpose Registers (MPR). The Mode Register 3 is written by asserting low
on /CS, /RAS, /CAS, /WE, high on BA1 and BA0, while controlling the states of address pins according to the table
below.
BA2 BA1 BA0
0
1
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
0*1
1
A2
A1
MPR
A0
MPR Loc
Address field
Mode register 3
L
EO
MPR Address
MPR location
A1 A0
MPR Operation
0
0
Predefined pattern*2
A2
MPR
0
1
RFU
0
Normal operation*3
1
0
RFU
1
Data flow from MPR
1
1
RFU
Notes : 1. BA2, A3 to A12 are reserved for future use (RFU) and must be programmed to 0 during MRS.
2. The predefined pattern will be used for read synchronization.
3 . When MPR control is set for normal operation, MR3 A[2]=0, MR3 A[1:0] will be ignored.
MR3 Programming
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
65
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Burst Length (MR0)
Read and write accesses to the DDR3 are burst oriented, with the burst length being programmable, as shown in the
figure MR0 Programming. The burst length determines the maximum number of column locations that can be
accessed for a given read or write command. Burst length options include fixed BC4, fixed BL8, and on the fly which
allows BC4 or BL8 to be selected coincident with the registration of a read on write command Via A12 (/BC).
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
L
EO
Burst Chop
In case of burst length being fixed to 4 by MR0 setting, the internal write operation starts two clock cycles earlier than
for the BL8 mode. This means that the starting point for tWR and tWTR will be pulled in by two clocks. In case of
burst length being selected on the fly via A12(/BC), the internal write operation starts at the same point in time like a
burst of 8 write operation. This means that during on-the-fly control, the starting point for tWR and tWTR will not be
pulled in by two clocks.
Burst Type (MR0)
[Burst Length and Sequence]
Operation
Starting address
(A2, A1, A0)
Sequential addressing
(decimal)
Interleave addressing
(decimal)
4 (burst chop)
READ
000
0, 1, 2, 3, T, T, T, T
0, 1, 2, 3, T, T, T, T
001
1, 2, 3, 0, T, T, T, T
1, 0, 3, 2, T, T, T, T
010
2, 3, 0, 1, T, T, T, T
2, 3, 0, 1, T, T, T, T
011
3, 0, 1, 2, T, T, T, T
3, 2, 1, 0, T, T, T, T
100
4, 5, 6, 7, T, T, T, T
4, 5, 6, 7, T, T, T, T
101
5, 6, 7, 4, T, T, T, T
5, 4, 7, 6, T, T, T, T
110
6, 7, 4, 5, T, T, T, T
6, 7, 4, 5, T, T, T, T
111
7, 4, 5, 6, T, T, T, T
7, 6, 5, 4, T, T, T, T
0VV
0, 1, 2, 3, X, X, X, X
0, 1, 2, 3, X, X, X, X
WRITE
1VV
8
READ
000
001
010
011
100
101
110
111
VVV
4, 5, 6, 7, X, X, X, X
4, 5, 6, 7, X, X, X, X
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
ct
WRITE
u
od
Pr
Burst length
Remark: T: Output driver for data and strobes are in high impedance.
V: a valid logic level (0 or 1), but respective buffer input ignores level on input pins.
X: Don’t Care.
Notes: 1. Page length is a function of I/O organization and column addressing
2. 0...7 bit number is value of CA [2:0] that causes this bit to be the first read during a burst.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
66
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
DLL Enable (MR1)
The DLL must be enabled for normal operation. DLL enable is required during power-up initialization, and upon
returning to normal operation after having the DLL disabled. The DLL is automatically disabled when entering selfrefresh operation and is automatically re-enabled upon exit of self-refresh operation. Any time the DLL is enabled
and subsequently reset, tDLLK clock cycles must occur before a read or synchronous ODT command can be issued
to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to
occur may result in a violation of the tDQSCK, tAON or tAOF parameters. During tDLLK, CKE must continuously be
registered high.
L
EO
DDR3 SDRAM does not require DLL for any write operation. DDR3 does not require DLL to be locked prior to any
write operation. DDR3 requires DLL to be locked only for read operation and to achieve synchronous ODT timing.
DLL Disable (MR1)
T0
CK, /CK
Command
T1
A
DQSdiff_DLL-on
T2
T3
T4
T5
T6
T7
T8
T9
u
od
BA
READ
Pr
DDR3 DLL-off mode is entered by setting MR1 bit A0 to 1; this will disable the DLL for subsequent operations until
A0 bit set back to 0. The MR1 A0 bit for DLL control can be switched either during initialization or later.
The DLL-off mode operations listed below are an optional feature for DDR3. The maximum clock frequency for DLLoff mode is 125MHz. There is no minimum frequency limit besides the need to satisfy the refresh interval, tREFI.
Due to latency counter and timing restrictions, only one value of /CAS Latency (CL) in MR0 and CAS Write Latency
(CWL) in MR2 are supported. The DLL-off mode is only required to support setting of both CL = 6 and CWL = 6.
DLL-off mode will affect the Read data Clock to Data Strobe relationship (tDQSCK) but not the Data Strobe to Data
relationship (tDQSQ, tQH, tQHS). Special attention is needed to line up Read data to controller time domain.
Comparing with DLL-on mode, where tDQSCK starts from the rising clock edge (AL + CL) cycles after the Read
command, the DLL-off mode tDQSCK starts (AL + CL − 1) cycles after the read command. Another difference is that
tDQSCK may not be small compared to tCK (it might even be larger than tCK) and the difference between tDQSCK
(min.). and tDQSCK (max.) is significantly larger than in DLL-on mode.
The timing relations on DLL-off mode READ operation are shown at following Timing Diagram (CL = 6, BL8):
RL = AL + CL = 6 (CL = 6, AL = 0)
CL = 6
DQ_DLL-on
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
RL (DLL-off) = AL + (CL - 1) = 5
tDQSCK(DLL-off)_min
DQSdiff_DLL-off
ct
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
DQ_DLL-off
tDQSCK(DLL-off)_max
DQSdiff_DLL-off
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
DQ_DLL-off
DLL-Off Mode Read Timing Operation
Preliminary Data Sheet E0966E60 (Ver. 6.0)
67
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Switch from DLL “on” to DLL “off” and Required Frequency Change During Self-Refresh
L
EO
1. Starting from Idle state (all banks pre-charged, all timings fulfilled, and DRAMs On-die Termination resistors,
RTT, must be in high impedance state before MRS to MR1 to disable the DLL.)
2. Set MR1 Bit A0 to “1” to disable the DLL.
3. Wait tMOD.
4. Enter Self-Refresh Mode; wait until (tCKSRE) satisfied.
5. Change frequency, in guidance with Input Clock Frequency Change during Precharge Power-Down section.
6. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs. After stable clock, wait tCKSRX
before issuing SRX commnad.
7. Starting with the Self-refresh exit command, ODT must continuously be registered low and CKE must
continuously be registered high until all tMOD timings from any MRS command are satisfied.
8. Wait tXS, then set Mode Registers with appropriate values (especially an update of CL, CWL and WR may be
necessary. A ZQCL command may also be issued after tXS).
9. Wait for tMOD, then DRAM is ready for next command.
Ta
Tb
Tc Tc+1 Tc+2
Td
Te
Tf Tf+1 Tf+2
Tg Tg+1
Th
CK
/CK
tMOD
Command
MRS
tCKSRE
tCKSRX
tXS
SRE NOP
SRX
tMOD
MRS
Valid
tCKESR
ODT
Pr
CKE
Change Frequency
ct
u
od
Preliminary Data Sheet E0966E60 (Ver. 6.0)
68
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Switch from DLL “off” to DLL “on” (with required frequency change) During Self-Refresh
L
EO
1. Starting from Idle state (all banks pre-charged, all timings fulfilled and DRAMs On-die Termination resistors (RTT)
must be in high impedance state before Self-Refresh mode is entered.)
2. Enter Self-refresh Mode, wait until tCKSRE satisfied.
3. Change frequency, in guidance with Input Clock Frequency Change during Precharge Power-Down section.
4. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs.
5. Starting with the self-refresh exit command, ODT must continuously be registered low and CKE must
continuously be registered high until all tDLLK timing from subsequent DLL Reset command is satisfied.
6. Wait tXS, then set MR1 bit A0 to “0” to enable the DLL.
7. Wait tMRD, then set MR0 bit A8 to “1” to start DLL Reset.
8. Wait tMRD, and then set Mode Registers with appropriate values (especially an update of CL, CWL and WR may
be necessary. After tMOD is satisfied from any proceeding MRS command, a ZQCL command may also be
issued during or after tDLLK.)
9. Wait for tMOD, and then DRAM is ready for next command (remember to wait tDLLK after DLL Reset before
applying command requiring a locked DLL!). In addition, wait also for tZQoper in case a ZQCL command was
issued.
Ta
Tb
Tc Tc+1Tc+2
Td
Te
Tf Tf+1 Tf+2
Tg
CK
/CK
tCKSRE
Command
tCKSRX
tDLLK
tXS
SRE NOP
SRX
tMRD
MRS
tMRD
MRS
MRS
Valid
Pr
tCKESR
CKE
ODTLoff + 1x tCK
ODT
u
od
Change Frequency
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
69
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Additive Latency (MR1)
A posted /CAS read or write command when issued is held for the time of the Additive Latency (AL) before it is
issued inside the device. The read or write posted /CAS command may be issued with or without auto precharge.
The Read Latency (RL) is controlled by the sum of AL and the /CAS latency (CL).
The value of AL is also added to compute the overall Write Latency (WL).
MRS (1) bits A4 and A3 are used to enable Additive latency.
MRS1
A3
AL*
L
EO
A4
0
0
0 (posted CAS disabled)
0
1
CL − 1
1
0
CL − 2
1
1
Reserved
Note: AL has a value of CL − 1 or CL − 2 as per the CL value programmed in the /CAS latency MRS setting.
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
70
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Write Leveling (MR1)
For better signal integrity, DDR3 memory module adopts fly by topology for the commands, addresses, control
signals and clocks. The fly by topology has benefits for reducing number of stubs and their length but in other
aspect, causes flight time skew between clock and strobe at every DRAM on DIMM. It makes Controller hard to
maintain tDQSS, tDSS and tDSH specification. Therefore, the controller should support ’write leveling’ in DDR3
SDRAM to compensate the skew.
L
EO
Write leveling is a scheme to adjust DQS to CK relationship by the controller, with a simple feedback provided by the
DRAM. The memory controller involved in the leveling must have adjustable delay setting on DQS to align the rising
edge of DQS with that of the clock at the DRAM pin. DRAM asynchronously feeds back CK, sampled with the rising
edge of DQS, through the DQ bus. The controller repeatedly delays DQS until a transition from 0 to 1 is detected.
The DQS delay established through this exercise would ensure tDQSS, tDSS and tDSH specification. A conceptual
timing of this scheme is shown as below.
diff_Clock
Source
diff_DQS
Destination
diff_Clock
diff_DQS
DQ
X
0
0
Push DQS to
capture 0-1 transition
DQ
X
1
1
Pr
Write leveling concept
u
od
DQS, /DQS driven by the controller during leveling mode must be terminated by the DRAM, based on the ranks
populated. Similarly, the DQ bus driven by the DRAM must also be terminated at the controller.
One or more data bits should carry the leveling feedback to the controller across the DRAM configurations ×4, ×8
and ×16. On a ×16 device, both byte lanes should be levelized independently. Therefore, a separate feedback
mechanism should be available for each byte lane. The upper data bits should provide the feedback of the upper
diff_DQS (diff_DQSU) to clock relationship whereas the lower data bits would indicate the lower diff_DQS
(diff_DQSL) to clock relationship.
DRAM Setting for Write Leveling and DRAM Termination Function in That Mode
DRAM enters into Write leveling mode if A7 in MR1 set 1. And after finishing leveling, DRAM exits from write
leveling mode if A7 in MR1 set 0 (MR1 Setting Involved in the Leveling Procedure table).
Note that in write leveling mode, only DQS/DQS terminations are activated and deactivated via ODT pin, not like
normal operation (refer to the DRAM Termination Function in The Leveling Mode table)
[MR1 Setting Involved in the Leveling Procedure]
MR1 bit
Write leveling enable
A7
Output buffer mode (Qoff)
A12
Enable
Disable
1
0
0
1
Note
ODT [email protected]
DQS, /DQS termination
ct
Function
De-asserted
Off
Off
Asserted
On
Off
Note: 1. Output buffer mode definition is consistent with DDR2
[DRAM Termination Function in The Leveling Mode]
1
DQs termination
Note: In Write Leveling Mode with its output buffer disabled (MR1 [bit7] = 1 with MR1 [bit12] = 1) all RTT_Nom
settings are allowed; in Write Leveling Mode with its output buffer enabled (MR1 [bit7] = 1 with MR1 [bit12] =
0) only RTT_Nom settings of RZQ/2, RZQ/4 and RZQ/6 are allowed.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
71
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Write Leveling Procedure
Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. Since the controller levelizes
rank at a time, the output of other rank must be disabled by setting MR1 bit A12 to 1. Controller may assert ODT
after tMOD, time at which DRAM is ready to accept the ODT signal.
L
EO
Controller may drive DQS low and /DQS high after a delay of tWLDQSEN, at which time DRAM has applied on-die
termination on these signals. After tWLMRD, controller provides a single DQS, /DQS edge which is used by the
DRAM to sample CK driven from controller. tWLMRD timing is controller dependent.
DRAM samples CK status with rising edge of DQS and provides feedback on all the DQ bits asynchronously after
tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no read
strobes (DQS, /DQS) needed for these DQs. Controller samples incoming DQ and decides to increment or
decrement DQS delay setting and launches the next DQS, /DQS pulse after some time, which is controller
dependent.
Once a 0 to 1 transition is detected, the controller locks DQS delay setting and write leveling is achieved for the
device. The below figure describes detailed timing diagram for overall procedure and the timing parameters are
shown in below figure.
tWLS T1
CK*5
/CK
Command
**22
MRS
T2
tWLS
tWLH
tWLH
**34
NOP
NOP
NOP
*3
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tMOD
6
*6(min.) tDQSL (min.)
tDQSL* (min.) tDQSH
ODT
tDQSH (min.)
Pr
tWLDQSEN
diff_DQS*4
tWLOE
All DQs,
Prime DQ*1
tWLO
tWLO
u
od
Remaining
DQs
tWLMRD
Notes:1. DRAM has the option to drive leveling feedback on a prime DQ or all DQs. If feedback is driven only on one DQ,
the remaining DQs must be driven low as shown in above Figure, and maintained at this state through out
the leveling procedure.
2. MRS : Load MR1 to enter write leveling mode.
3. NOP : NOP or deselec
4. diff_DQS is the differential data strobe (DQS, /DQS). Timing reference points are the zero crossing. DQS is
shown with solid line, /DQS is shown with dotted line.
5. CK, /CK : CK is shown with solid dark line, where as /CK is drawn with dotted line.
6. DQS needs to fulfill minimum pulse width requirements tDQSH (min.) and tDQSL (min.) as defined for regular
writes; the max pulse width is system dependent.
Timing Details Write leveling Sequence
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
72
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Write Leveling Mode Exit
The following sequence describes how Write Leveling Mode should be exited:
1. After the last rising strobe (see T111) edge stop driving the strobe signals (see ~T128). Note: From now on, DQ
pins are in undefined driving mode, and will remain undefined, until tMOD after the respective MR command
(T145).
2. Drive ODT pin low (tIS must be satisfied) and keep it low (see T128).
3. After the RTT is switched off: disable Write Level Mode via MR command (see T132).
4. After tMOD is satisfied (T145), any valid commands may be registered. (MR commands may already be issued
after tMRD (T136).
L
EO
T111
T112
T116
T117
T128
T131
T132
T136
T145
MRS
Valid
CK, /CK
Command
BA
WL_off
tMOD
1
tIS
Valid
Valid
Valid
tMRD
ODT
tODTL_off
RTT_DQS-/DQS
DQS-/DQS
RTT_DQ
DQ
Pr
tWLO + tWLOE
Result = 1
Timing Details Write leveling Exit
[Related Parameters]
Parameter
tWLMRD
tWLDQSEN
tWLS
tWLH
min.
max.
First DQS pulse rising edge after write leveling mode is
programmed
40
*
1
tCK
DQS, /DQS delay after write leveling mode is programmed
25
*
1
tCK
0.15
*
1
tCK
0.15
*
1
tCK
0
10
ns
⎯
2
ns
Write leveling setup time from rising CK, /CK crossing to rising
DQS, /DQS crossing
Write leveling hold time from rising DQS, /DQS crossing to rising
CK, /CK crossing
tWLO
Write leveling output delay
tWLOE
Write leveling output error
Unit
u
od
Symbol
Note: 1. The max values are system dependent.
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
73
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
TDQS, /TDQS function (MR1)
L
EO
TDQS (Termination Data Strobe) is a feature of ×8 DDR3 SDRAM that provides additional termination resistance
outputs that may be useful in some system configurations.
TDQS is not supported in ×4 or ×16 configurations. When enabled via the mode register, the same termination
resistance function is applied to the TDQS and /TDQS pins that are applied to the DQS and /DQS pins.
In contrast to the RDQS function of DDR2 SDRAM, TDQS provides the termination resistance function only. The
data strobe function of RDQS is not provided by TDQS.
The TDQS and DM functions share the same pin. When the TDQS function is enabled via the mode register, the DM
function is not supported. When the TDQS function is disabled, the DM function is provided and the /TDQS pin is
not used. See Table TDQS, /TDQS function for details.
The TDQS function is available in ×8 DDR3 SDRAM only and must be disabled via the mode register A11 = 0 in
MR1 for ×4 and ×16 configurations.
[TDQS, /TDQS function]
[email protected]
TDQS enable
0
Disable
1
Enable
Notes: 1. If TDQS is enabled, the DM function is disabled.
2. When not used, TDQS function can be disabled to save termination power
3. TDQS function is only available for ×8 DRAM and must be disabled for ×4 and ×16
[Function matrix]
DM/TDQS
NU/ /TDQS
0
DM
High-Z
TDQS
/TDQS
1
ct
u
od
Pr
[email protected] (TDQS enable)
Preliminary Data Sheet E0966E60 (Ver. 6.0)
74
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Extended Temperature Usage (MR2)
[Mode Register Description]
Field
ASR
Bits
A6
Description
0
1
Description
Manual SR Reference (SRT)
ASR enable (optional)
L
EO
SRT
A7
0
1
Normal operating temperature range
Extended (optional) operating temperature range
Auto self-refresh (ASR) (Optional)
when enabled, DDR3 SDRAM automatically
provides self-refresh power management functions
for all supported operating temperature values. If
not enabled, the SRT bit must be programmed to
indicate TC during subsequent self-refresh
operation
Self-Refresh Temperature (SRT) Range
If ASR = 0, the SRT bit must be programmed to
indicate TC during subsequent self-refresh
operation
If ASR = 1, SRT bit must be set to 0
Pr
Auto Self-Refresh Mode - ASR Mode (optional)
DDR3 SDRAM provides an Auto Self-Refresh mode (ASR) for application ease. ASR mode is enabled by setting
MR2 bit A6 = 1 and MR2 bit A7 = 0. The DRAM will manage self-refresh entry in either the Normal or Extended
(optional) Temperature Ranges. In this mode, the DRAM will also manage self-refresh power consumption when the
DRAM operating temperature changes, lower at low temperatures and higher at high temperatures.
If the ASR option is not supported by the DRAM, MR2 bit A6 must be set to 0.
If the ASR mode is not enabled (MR2 bit A6 = 0), the SRT bit (MR2 A7) must be manually programmed with the
operating temperature range required during self-refresh operation.
Support of the ASR option does not automatically imply support of the Extended Temperature Range.
[Self-Refresh Mode Summary]
MR2
u
od
Self- Refresh Temperature Range - SRT (optional)
If ASR = 0, the Self-Refresh Temperature (SRT) Range bit must be programmed to guarantee proper self-refresh
operation. If SRT = 0, then the DRAM will set an appropriate refresh rate for self-refresh operation in the Normal
Temperature Range. If SRT = 1 then the DRAM will set an appropriate, potentially different, refresh rate to allow
self-refresh operation in either the Normal or Extended Temperature Ranges. The value of the SRT bit can effect
self-refresh power consumption, please refer to the IDD table for details.
For parts that do not support the Extended Temperature Range, MR2 bit A7 must be set to 0 and the DRAM should
not be operated outside the Normal Temperature Range.
Allowed operating temperature range
for self-refresh mode
A6
A7
Self-refresh operation
0
0
Self-refresh rate appropriate for the Normal Temperature Range
1
1
0
1
0
1
1
Illegal
Preliminary Data Sheet E0966E60 (Ver. 6.0)
75
Normal (0°C to +85°C)
Normal and Extended (0°C to +95°C)
ct
0
Self-refresh rate appropriate for either the Normal or Extended
Temperature Ranges. The DRAM must support Extended
Temperature Range. The value of the SRT bit can effect selfrefresh power consumption, please refer to the Self- refresh
Current for details.
ASR enabled (for devices supporting ASR and Normal
Temperature Range). Self-refresh power consumption is
temperature dependent
ASR enabled (for devices supporting ASR and Extended
Temperature Range). Self-refresh power consumption is
temperature dependent
Normal (0°C to +85°C)
Normal and Extended (0°C to +95°C)
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Multi Purpose Register (MR3)
The Multi Purpose Register (MPR) function is used to read out predefined system timing calibration bit sequence.
L
EO
)
%&# % # %&'# (%&' · ! " # " $% $%
" " ·
Pr
Conceptual Block Diagram of Multi Purpose Register
MR3
A2
A [1:0]
MPR
MPR-Loc
Don’t care
(0 or 1)
1
MR3 A [1:0]
Notes
Normal operation, no MPR transaction.
All subsequent reads will come from DRAM array.
All subsequent WRITEs will go to DRAM array.
Enable MPR mode, subsequent READ/READA commands defined by MR3 A [1:0]
1
bits.
ct
0
Function
u
od
To enable the MPR, a mode register set (MRS) command must be issued to MR3 register with bit A2 = 1. Prior to
issuing the MRS command, all banks must be in the idle state (all banks precharged and tRP/tRPA met). Once the
MPR is enabled, any subsequent READ or READA commands will be redirected to the multi purpose register. The
resulting operation when a READ or READA command is issued is defined by MR3 bits [A1: A0] when the MPR is
enabled. When the MPR is enabled, only READ or READA commands are allowed until a subsequent MRS
command is issued with the MPR disabled (MR3 bit A2=0). Power-down mode, self-refresh, and any other nonREAD/READA command are not allowed during MPR enable mode. The /RESET function is supported during MPR
enable mode.
[Functional Description of MR3 Bits for MPR]
Note: 1. See Available Data Locations and Burst Order Bit Mapping for Multi Purpose Register table
Preliminary Data Sheet E0966E60 (Ver. 6.0)
76
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
L
EO
• One bit wide logical interface via all DQ pins during READ operation
⎯ Register Read on ×4:
DQ [0] drives information from MPR.
DQ [3:1] either drive the same information as DQ [0], or they drive 0.
⎯ Register Read on ×8:
DQ [0] drives information from MPR.
DQ [7:1] either drive the same information as DQ [0], or they drive 0.
⎯ Register Read on ×16:
DQL [0] and DQU [0] drive information from MPR.
DQL [7:1] and DQU [7:1] either drive the same information as DQL [0], or they drive 0.
Note: A standardization of which DQ is used by DDR3 SDRAM for MPR reads is strongly recommended to ensure
functionality also for AMB2 on DDR3 FB-DIMM.
Pr
• Addressing during Multi Purpose Register reads for all MPR agents:
⎯ BA [2:0]: don’t care.
⎯ A [1:0]: A [1:0] must be equal to ‘00’b. Data read burst order in nibble is fixed
⎯ A [2]:
For BL8, A [2] must be equal to 0.
1
Burst order is fixed to [0,1,2,3,4,5,6,7] *
For Burst Chop 4 cases, the burst order is switched on nibble base
A [2] = 0, Burst order: 0,1,2,3 *1
1
A [2] = 1, Burst order: 4,5,6,7 *
⎯ A [9:3]: don’t care
⎯ A10(AP): don’t care
⎯ A12(/BC): Selects burst chop mode on-the-fly, if enabled within MR0
⎯ A11: don’t care
ct
u
od
• Regular interface functionality during register reads:
⎯ Support two burst ordering which are switched with A2 and A [1:0] = 00.
⎯ Support of read burst chop (MRS and on-the-fly via A12(/BC).
All other address bits (remaining column address bits including A10, all bank address bits) will be ignored by the
DDR3 SDRAM.
⎯ Regular read latencies and AC timings apply.
⎯ DLL must be locked prior to MPR Reads.
Note: Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
77
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Functional Block Diagrams
Figures below provide functional block diagrams for the multi purpose register in ×4, ×8 and ×16 DDR3 SDRAM.
Memory Array
L
EO
4×8
4×8
32
Copy to
DQ[3:0]
DQ[3:0]
8
Q
Read Path
MPR
DQS
/DQS
DM
NibbleLane
Memory Array
8×8
8×8
64
Copy to
DQ[7:0]
8
Q
MPR
u
od
Pr
Functional Block Diagram of Multi Purpose Register in ×4 DDR3 SDRAM
Read Path
DQ[7:0]
DQS
/DQS
ct
DM
ByteLane
Functional Block Diagram of Multi Purpose Register in ×8 DDR3 SDRAM
Preliminary Data Sheet E0966E60 (Ver. 6.0)
78
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Memory Array
DQU[7:0]
8×8
Read Path
8×8
DQSU
L
EO
/DQSU
64
DMU
8×8
ByteLaneUpper
Copy to
DQU[7:0]
8
8×8
8×8
64
Copy to
DQL[7:0]
DQL[7:0]
8
Q
Read Path
MPR
DQSL
Pr
/DQSL
DML
ByteLaneLower
ct
u
od
Functional Block Diagram of Multi Purpose Register in ×16 DDR3 SDRAM
Preliminary Data Sheet E0966E60 (Ver. 6.0)
79
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Register Address Table
The table below provides an overview of the available data locations, how they are addressed by MR3 A [1:0] during
a MR0 to MR3, and how their individual bits are mapped into the burst order bits during a multi purpose register
read.
[Available Data Locations and Burst Order Bit Mapping for Multi Purpose Register]
MR3
A [2]
MR3
A [1:0]
Burst
Length
Function
Read
Address Burst Order and Data Pattern
A [2:0]
L
EO
1
1
1
1
00
01
10
11
Notes
Burst order 0,1,2,3,4,5,6,7
Pre-defined pattern [0,1,0,1,0,1,0,1]
Burst order 0,1,2,3,
Pre-defined pattern [0,1,0,1]
Burst order 4,5,6,7
Pre-defined pattern [0,1,0,1]
1
BL8
Read predefined
pattern for
BC4
system
calibration
BC4
000
BL8
000
Burst order 0,1,2,3,4,5,6,7
1
BC4
000
Burst order 0,1,2,3
1
BC4
100
Burst order 4,5,6,7
1
BL8
000
Burst order 0,1,2,3,4,5,6,7
1
BC4
000
Burst order 0,1,2,3
1
BC4
100
Burst order 4,5,6,7
1
BL8
000
Burst order 0,1,2,3,4,5,6,7
1
BC4
000
Burst order 0,1,2,3,
1
RFU
RFU
RFU
000
100
Pr
BC4
100
Burst order 4,5,6,7
1
1
1
Note: 1. Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
[MPR Recovery Time tMPRR]
Symbol
Description
tMPRR
u
od
Relevant Timing Parameters
The following AC timing parameters are important for operating the Multi Purpose Register: tRP, tMRD, tMOD and
tMPRR.
Besides these timings, all other timing parameters needed for proper operation of the DDR3 SDRAM need to be
observed.
Multi Purpose Register Recovery Time, defined between end of MPR read burst and MRS which
reloads MPR or disables MPR function
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
80
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Protocol Examples
Protocol Example: Read Out Predetermined Read-Calibration Pattern
Multiple reads from Multi Purpose Register, in order to do system level read timing calibration based on
predetermined and standardized pattern.
L
EO
Protocol Steps:
• Precharge All
• Wait until tRP is satisfied
• MRS MR3, op-code “A2 = 1 “ and “A[1:0] = 00“
⎯ Redirect all subsequent reads into the Multi Purpose Register, and load Pre-defined pattern into MPR.
• Wait until tMRD and tMOD are satisfied (Multi Purpose Register is then ready to be read). During the period
MR3 A2 =1, no data write operation is allowed.
• Read:
⎯ A [1:0] = ‘00’ (Data burst order is fixed starting at nibble, always 00 here)
⎯ A [2] = ‘0’ (For BL8, burst order is fixed as 0,1,2,3,4,5,6,7)
⎯ A12(/BC) = 1 (use regular burst length of 8)
⎯ All other address pins (including BA [2:0] and A10(AP)): don’t care.
• After RL = AL + CL, DRAM bursts out the predefined Read Calibration Pattern.
• Memory controller repeats these calibration reads until read data capture at memory controller is optimized.
• After end of last MPR read burst wait until tMPRR is satisfied.
• MRS MR3, op-code “A2 = 0“ and “A[1:0] = valid data but value are don’t care“
⎯ All subsequent read and write accesses will be regular READs and WRITEs from/to the DRAM array.
• Wait until tMRD and tMOD are satisfied
• Continue with “regular” DRAM commands, like activate a memory bank for regular read or write access,
Pr
T0
T4 T5
CK
/CK
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
tMRD
PALL
NOP
MRS
tRP
NOP
READ
tMOD
BA
Valid
A[1:0]
0
0
NOP
Valid
*2
1
0
A[9:3]
00
Valid
0
Valid
0
Valid
A[11]
MRS
3
*2
A[2]
1
NOP
tMPRR
3
A10(AP)
tMOD
*1
u
od
Command
T39
0
00
0
0
ct
*1
A12(/BC)
0
Valid
A[15:13]
0
Valid
0
0
DQS, /DQS
RL
DQ
Notes: 1. READ with BL8 either by MRS or OTF
2. Memory Control must drive 0 on A[2:0]
VIH or VIL
MPR Readout of Predefined Pattern, BL8 fixed Burst Order, Single Readout
Preliminary Data Sheet E0966E60 (Ver. 6.0)
81
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T4 T5
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
T43
CK
/CK
tMRD
Command
PALL
NOP
MRS
tRP
tMOD
NOP
A[1:0]
0
0
0
*2
L
EO
1
3
Valid
*2
0
*2
Valid
*2
0
00
Valid
Valid
00
0
Valid
Valid
0
A[11]
0
Valid
Valid
0
A12(/BC)
0
Valid
Valid
0
A[15:13]
0
Valid
Valid
0
A10, AP
NOP
tMPRR
Valid
1
A[9:3]
MRS
NOP
tCCD
0
A[2]
*1
READ
NOP
tMOD
3
BA
*1
READ
*1
*1
DQS, /DQS
RL
RL
DQ
Notes: 1. READ with BL8 either by MRS or OTF
2. Memory Control must drive 0 on A[2:0]
VIH or VIL
MPR Readout of Predefined Pattern, BL8 Fixed Burst Order, Back-to-Back Readout
Pr
T0
T4 T5
CK
/CK
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
tMRD
Command
PALL
NOP
tRP
MRS
NOP
Valid
0
*2
*3
1
0
00
Valid
0
Valid
A[11]
0
Valid
A12(/BC)
0
Valid
A[15:13]
0
Valid
A[2]
A[9:3]
A10(AP)
1
NOP
tCCD
tMOD
MRS
NOP
tMPRR
u
od
0
A[1:0]
*1
READ
NOP
tMOD
3
BA
*1
READ
T43
3
Valid
0
1
*1
*2
Valid
*4
0
Valid
00
Valid
0
Valid
0
*1
Valid
0
Valid
0
RL
RL
DQ
ct
DQS, /DQS
VIH or VIL
Notes:1. READ with BC4 either by MRS or OTF
2. Memory Control must drive 0 on A[1:0]
3. A[2] = 0 selects lower 4 nibble bits 0 ... 3
4. A[2] = 1 selects upper 4 nibble bits 4 ... 7
MPR Readout Predefined Pattern, BC4, Lower Nibble Then Upper Nibble
Preliminary Data Sheet E0966E60 (Ver. 6.0)
82
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T4 T5
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
T43
CK, /CK
tMRD
Command
PALL
NOP
MRS
tRP
NOP
tMOD
*1
READ
Valid
A[1:0]
0
0
1
1
MRS
NOP
tMPRR
3
Valid
*2
0
*4
L
EO
A[9:3]
A10, AP
NOP
tCCD
3
1
READ
NOP
tMOD
BA
A[2]
*1
0
*2
Valid
*3
0
00
Valid
Valid
00
0
Valid
Valid
0
Valid
0
A[11]
0
Valid
A12(/BC)
0
Valid
Valid
0
A[15:13]
0
Valid
Valid
0
*1
*1
DQS, /DQS
RL
RL
DQ
Notes:1. READ with BC4 either by MRS or OTF
2. Memory Control must drive 0 on A[1:0]
3. A[2] = 0 selects lower 4 nibble bits 0 ... 3
4. A[2] = 1 selects upper 4 nibble bits 4 ... 7
VIH or VIL
Pr
MPR Readout of Predefined Pattern, BC4, Upper Nibble Then Lower Nibble
ct
u
od
Preliminary Data Sheet E0966E60 (Ver. 6.0)
83
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Operation of the DDR3 SDRAM
Read Timing Definition
CK, /CK crossing to DQS, /DQS crossing
tDQSCK; rising edges only of CK and DQS
tQSH; rising edges of DQS to falling edges of DQS
tQSL; rising edges of / DQS to falling edges of /DQS
tLZ (DQS), tHZ (DQS) for preamble/postamble (see tHZ (DQS), tLZ (DQS)
L
EO
•
•
•
•
•
RL Measured to this point
CK
/CK
tDQSCK(min.)
tDQSCK(min.)
tDQSCK(min.)
tDQSCK(min.)
tLZ(DQS)(min.)
tQSH
tQSL
tRPRE
DQS, /DQS
Early strobe
Bit0
tRPST
Bit1
Bit2
Bit4
Bit5
Pr
tDQSCK(max.)
tLZ(DQS)(max.)
Bit3
tDQSCK(max.)
tQSH
tDQSCK(max.)
Bit6
Bit7
tDQSCK(max.)
tHZ(DQS)(max.)
tQSL
tRPRE
Bit0
u
od
DQS, /DQS
Late strobe
tRPST
Bit1
Bit2
Bit3
Bit4
Bit5
Bit6
Bit7
Notes: Within a burst, rising strobe edge is not necessarily fixed to be always at tDQSCK(min.) or tDQSCK(max.).
Instead, rising strobe edge can vary between tDQSCK(min.) or tDQSCK(max.) within a burst.
Likewise tLZ(DQS)(min.) and tHZ(DQS)(min.) are not tied to tDQSCK(min.) (early strobe case) and
tLZ(DQS)(max.) and tHZ(DQS)(max.) are not tied to tDQSCK(max.) (late strobe case).
The minimum pulse width of read preamble is defined by tRPRE(min.).
The minimum pulse width of read preamble is defined by tRPST(min.).
DDR3 Clock to Data Strobe Relationship
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
84
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
• DQS, /DQS crossing to Data Output
• tDQSQ; both rising/falling edges of DQS, no tAC defined
T0
T4
T5
T6
T7
T8
T9
T10
/CK
CK
Command*3
NOP
READ
RL = AL + CL
Address*4
Bank
Coln
L
EO
tRPRE
tQH
tQH
tRPST
DQS, /DQS
tDQSQ(max.)
tDQSQ(max.)
tLZ(DQ)(max.)
DQ*2
(Last data valid)
tLZ(DQ)(min.)
tHZ(DQ)(max.)
Dout
n
Dout
n
DQ*2
(First data no longer valid)
All DQS collectively
Dout
n+1
Dout
n+1
Dout
n
Dout
n+2
Dout
n+2
Dout
n+1
Dout
n+2
Data valid
Dout
n+3
Dout
n+3
Dout
n+4
Dout
n+4
Dout
n+3
Dout
n+5
Dout
n+5
Dout
n+4
Dout
n+6
Dout
n+6
Dout
n+5
Dout
n+6
Dout
n+7
Dout
n+7
Dout
n+7
Data valid
Pr
VIH or VIL
u
od
Notes: 1. BL8, RL = 5(AL = 0, CL = 5).
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] and A12 = 1 during READ command at T0.
5. Output timings are referenced to VDDQ/2, and DLL on for locking.
6. tDQSQ defines the skew between DQS, /DQS to data and does not define DQS, /DQS to clock.
7. Early data transitions may not always happen at the same DQ.
Data transitions of a DQ can vary(either early or late) within a busy.
DDR3 Data Strobe to Data Relationship
tLZ (DQS), tLZ (DQ), tHZ (DQS), tHZ (DQ) Notes
tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to
a specific voltage level which specifies when the device output is no longer driving tHZ(DQS) and tHZ(DQ), or begins
driving tLZ(DQS), tLZ(DQ). The figure below shows a method to calculate the point when device is no longer driving
tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS), tLZ(DQ) by measuring the signal at two different voltages. The
actual voltage measurement points are not critical as long as the calculation is consistent. The parameters
tLZ(DQS), tLZ(DQ), tHZ(DQS), and tHZ(DQ) are defined as singled ended.
VTT + 2x mV
VOH − 2x mV
VTT + x mV
ct
VOH − x mV
tLZ (DQS), tLZ (DQ)
tHZ (DQS), tHZ (DQ)
T2
T1
VOL + 2x mV
VTT − x mV
VOL + x mV
VTT − 2x mV
T1
T2
tLZ (DQS), tLZ (DQ) begin point = 2 × T1 - T2
tHZ (DQS), tHZ (DQ) end point = 2 × T1 - T2
Method for Calculating Transitions and Endpoints
Preliminary Data Sheet E0966E60 (Ver. 6.0)
85
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Read Operation
During read or write command DDR3 will support BC4 and BL8 on the fly using address A12 during the READ or
WRITE (auto precharge can be enabled or disabled).
• A12 = 0, BC4 (BC4 = burst chop, tCCD = 4)
• A12 = 1, BL8
A12 will be used only for burst length control, not a column address.
L
EO
The Burst Read command is initiated by having /CS and /CAS low while holding /RAS and /WE high at the rising
edge of the clock. The address inputs determine the starting column address for the burst. The delay from the start
of the command to when the data from the first cell appears on the outputs is equal to the value of the read latency
(RL). The data strobe output (DQS) is driven low 1 clock cycle before valid data (DQ) is driven onto the data bus.
The first bit of the burst is synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out
appears on the DQ pin in phase with the DQS signal in a source synchronous manner.
The RL is equal to an additive latency (AL) plus /CAS latency (CL). The CL is defined by the mode register 0 (MR0),
similar to the existing SDR and DDR-I SDRAMs. The AL is defined by the mode register 1
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
READ
Address*4
Bank
Col n
NOP
Pr
Command*3
tRPRE
DQS, /DQS
Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
CL = 5
RL = AL + CL
u
od
DQ*2
tRPST
VIH or VIL
Notes: 1. BL8, AL = 0, RL = 5, CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
Burst Read Operation, RL = 5
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
86
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CK
/CK
Command*3
READ
Address*4
Bank
Col n
NOP
tRPST
tRPRE
L
EO
DQS, /DQS*2
Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
DQ
AL = 4
CL = 5
RL = AL + CL
VIH or VIL
Notes: 1. BL8, RL = 9, AL = (CL − 1), CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
Burst Read Operation, RL = 9
/CK
Command*3
READ
Pr
T0
CK
T3
NOP
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
NOP
READ
tCCD
Bank
Col n
Bank
Col b
tRPRE
DQS, /DQS
u
od
Address*4
tRPST
Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
b
b+1 b+2 b+3 b+4 b+5 b+6 b+7
DQ*2
RL = 5
RL = 5
READ (BL8) to READ (BL8)
Preliminary Data Sheet E0966E60 (Ver. 6.0)
87
ct
VIH or VIL
Notes: 1. BL8, RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0 and T4.
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
CK
/CK
Command*3
READ
NOP
READ
NOP
tCCD
Address*4
Bank
Col b
Bank
Col n
tRPST
tRPRE
tRPST
tRPRE
L
EO
DQS, /DQS
Dout Dout Dout Dout
n
n+1 n+2 n+3
DQ*2
Dout Dout Dout Dout
b
b+1 b+2 b+3
RL = 5
RL = 5
VIH or VIL
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0 and T4.
READ (BC4) to READ (BC4)
/CK
Command*3
READ
Pr
T0
CK
T3
T4
T5
T6
T7
T8
T9
WRIT
NOP
T10
T11
T12
T13
T14 T15
NOP
u
od
tWR
READ to WRIT command delay = RL + tCCD + 2tCK − WL
tBL = 4 clocks
tWTR
Address*4
Bank
Col n
Bank
Col b
tRPRE
DQS, /DQS
tRPST
Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
DQ*2
RL = 5
tWPRE
Din
b
tWPST
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
WL = 5
READ (BL8) to WRITE (BL8)
Preliminary Data Sheet E0966E60 (Ver. 6.0)
88
ct
VIH or VIL
Notes: 1. BL8, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0 and WRIT command T6.
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14 T15
CK
/CK
Command*3
READ
NOP
WRIT
NOP
READ to WRIT Command delay = RL + tCCD/2 + 2tCK − WL
tWR
tBL = 4 clocks
tWTR
Bank
Col n
Address*4
Bank
Col b
tRPST
tRPRE
tWPST
tWPRE
L
EO
DQS, /DQS
Dout Dout Dout Dout
n
n+1 n+2 n+3
DQ*2
RL = 5
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
VIH or VIL
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0 and WRIT command T4.
READ (BC4) to WRITE (BC4) OTF
T0
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
CK
Command*3
READ
Pr
/CK
NOP
NOP
READ
tCCD
Address*4
Bank
Col n
Bank
Col b
DQS, /DQS
u
od
tRPRE
tRPST
Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
b
b+1 b+2 b+3
DQ*2
RL = 5
RL = 5
VIH or VIL
READ (BL8) to READ (BC4) OTF
Preliminary Data Sheet E0966E60 (Ver. 6.0)
89
ct
Notes: 1. RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T4.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
CK
/CK
Command*3
READ
NOP
READ
NOP
tCCD
Address*4
Bank
Col n
Bank
Col b
tRPST
tRPRE
tRPRE
tRPST
L
EO
DQS, /DQS
Dout Dout Dout Dout
n
n+1 n+2 n+3
DQ*2
Dout Dout Dout Dout Dout Dout Dout Dout
b
b+1 b+2 b+3 b+4 b+5 b+6 b+7
RL = 5
RL = 5
VIH or VIL
Notes: 1. RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T4.
READ (BC4) to READ (BL8) OTF
/CK
Command*3
READ
Pr
T0
CK
T3
NOP
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14 T15
NOP
WRIT
tWR
tBL = 4 clocks
u
od
READ to WRIT command delay = RL + tCCD/2 + 2tCK − WL
tWTR
Address*4
Bank
Col n
Bank
Col b
tRPRE
DQS, /DQS
tRPST
Dout Dout Dout Dout
n
n+1 n+2 n+3
DQ*2
RL = 5
tWPST
tWPRE
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
WL = 5
VIH or VIL
READ (BC4) to WRITE (BL8) OTF
Preliminary Data Sheet E0966E60 (Ver. 6.0)
90
ct
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n , Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T4.
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14 T15
CK
/CK
Command*3
READ
NOP
WRIT
NOP
READ to WRIT command delay = RL + tCCD + 2tCK − WL
tWR
tBL = 4 clocks
tWTR
Address*4
Bank
Col n
Bank
Col b
tRPST
tRPRE
tWPRE
tWPST
L
EO
DQS, /DQS
Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
DQ*2
RL = 5
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
VIH or VIL
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, n Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T6.
READ (BL8) to WRITE (BC4) OTF
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
91
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Write Timing Definition
/CK*1
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
WRIT
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command*3
WL = AL + CWL
Address*4
Bank,
Col n
L
EO
tDQSS tDSH
tWPRE (min)
tDSH
tDSH
tDSH
tWPST (min)
tDQSS(min)
DQS, /DQS
DQ*2
tDQSL
tDQSH
tDQSH
tDQSH
tDQSH
tDQSL
tDQSL
tDQSL
tDQSL (min)
tDQSH (min)
tDSS
tDSS
Din
n+1
Din
n
tWPRE (min)
Din
n+2
tDSH
tDSS
Din
n+3
Din
n+4
tDSH
tDSS
Din
n+5
Din
n+6
tDSH
tDSS
Din
n+7
tDSH
tWPST (min)
DQS, /DQS
tDQSH
tDQSH
tDQSH
tDQSH
tDQSL
tDQSL
tDQSL
tDQSL
tDQSL (min)
tDQSH (min)
tDSS
Din
n+1
Din
n
DQ*2
tDSS
Pr
tDSS
Din
n+2
Din
n+3
tDSS
Din
n+4
Din
n+5
tDSS
Din
n+6
Din
n+7
tDQSS
tDSH
tDQSS(max)
DQS, /DQS
tDSH
tDSH
tDSH
tWPST (min)
tWPRE (min)
u
od
tDQSLtDQSHtDQSLtDQSHtDQSLtDQSHtDQSLtDQSH
tDQSL (min)
tDQSH (min)
tDSS
tDSS
Din
n
DQ*2
Notes: 1.
2.
3.
4.
5.
Din
n+1
tDSS
Din
n+2
Din
n+3
tDSS
tDSS
Din
n+4
Din
n+5
Din
n+6
Din
n+7
BL8, WL = 5 (AL = 0, CWL = 5)
VIH or VIL
Din n = data-in from column n.
NOP commands are shown for ease of illustration; other commands may be valid at these times.
BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
tDQSS must be met at each rising clock edge.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
92
ct
Write Timing Definition
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Write Operation
During read or write command DDR3 will support BC4 and BL8 on the fly using address A12 during the READ or
WRITE (auto precharge can be enabled or disabled).
• A12 = 0, BC4 (BC4 = burst chop, tCCD = 4)
• A12 = 1, BL8
A12 will be used only for burst length control, not a column address.
L
EO
The Burst Write command is initiated by having /CS, /CAS and /WE low while holding /RAS high at the rising edge of
the clock. The address inputs determine the starting column address. Write latency (WL) is equal to (AL + CWL). A
data strobe signal (DQS) should be driven low (preamble) one clock prior to the WL. The first data bit of the burst
cycle must be applied to the DQ pins at the first rising edge of the DQS following the preamble. The tDQSS
specification must be satisfied for write cycles. The subsequent burst bit data are issued on successive edges of the
DQS until the burst length of 4 is completed. When the burst has finished, any additional data supplied to the DQ
pins will be ignored. The DQ Signal is ignored after the burst write operation is complete. The time from the
completion of the burst write to bank precharge is the write recovery time (tWR).
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CK
/CK
Command*3
NOP
WRIT
WL = AL + CWL
Bank
Col n
Pr
Address*4
tWPRE
DQS, /DQS
Din
n
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
u
od
DQ*2
tWPST
VIH or VIL
Notes: 1. BL8, WL = 5 (AL = 0, CWL = 5)
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
Burst Write Operation, WL = 5
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
93
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CK
/CK
Command*3
WRIT
Address*4
Bank
Col n
NOP
tWPST
tWPRE
L
EO
DQS, /DQS
Din
n
DQ*2
AL = 4
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
CWL = 5
WL = AL + CWL
VIH or VIL
Notes: 1. BL8, WL = 9 (AL = (CL − 1), CL = 5, CWL = 5)
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRITcommand at T0.
Burst Write Operation, WL = 9
/CK
Command*3
WRIT
Pr
T0
CK
T1
T2
T3
T4
T5
T6
T7
T8
T9
NOP
T10
Tn
Tn+1
Tn+2
READ
Address*4
Bank
Col n
u
od
tWTR*5
Bank
Col b
tWPRE
DQS, /DQS
Din
n
DQ*2
WL = 5
Notes:
tWPST
Din
n+1
Din
n+2
Din
n+3
RL = 5
Write to Read Operation
Preliminary Data Sheet E0966E60 (Ver. 6.0)
94
VIH or VIL
ct
1. BC4, WL = 5, RL = 5.
2. Din n = data-in from column n; Dout b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] during WRIT command at T0 and READ command at Tn.
5. tWTR controls the write to read delay to the same device and starts with the first rising clock edge after the
last write data shown at T7.
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
Tn
Tn+1
Tn+2
CK
/CK
Command*3
NOP
WRIT
PRE
tWR*5
Address*4
Bank
Col n
L
EO
tWPRE
tWPST
DQS, /DQS
Din
n
DQ*2
Din
n+1
Din
n+2
Din
n+3
WL = 5
Notes:
VIH or VIL
1. BC4, WL = 5, RL = 5.
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] during WRIT command at T0.
5. The write recovery time (tWR) referenced from the first rising clock edge after the last write data shown at T7.
tWR specifies the last burst write cycle until the precharge command can be issued to the same bank .
Write to Precharge Operation
/CK
Command*3
WRIT
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
Pr
T0
CK
NOP
tWR
tBL = 4 clocks
tWTR
Bank
Col b
tWPRE
DQS, /DQS
DQ*2
T13
u
od
Bank
Col n
T12
NOP
WRIT
tCCD
Address*4
T11
Din
n
WL = 5
tWPST
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
WL = 5
WRITE (BL8) to WRITE (BL8)
Preliminary Data Sheet E0966E60 (Ver. 6.0)
95
ct
Notes: 1. BL8, WL = 5 (CWL = 5, AL = 0)
VIH or VIL
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0 and T4.
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CK
/CK
Command*3
NOP
WRIT
NOP
WRIT
tCCD
tWR
tBL = 4 clocks
tWTR
Address*4
Bank
Col n
Bank
Col b
L
EO
tWPRE
tWPST
tWPRE
tWPST
DQS, /DQS
DQ*2
Din
n
WL = 5
Din
n+1
Din
n+2
Din
n+3
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
Notes: 1. BC4, WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by either MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0 and T4.
VIH or VIL
WRITE (BC4) to WRITE (BC4)
/CK
Command*3
T2
T3
T4
T5
T6
T7
T8
T10
T11
NOP
Bank
Col n
T12
T13
T14
READ
NOP
tWTR
Bank
Col b
tWPRE
DQS, /DQS
Din
n
DQ*2
WL = 5
Notes:
T9
u
od
Address*4
WRIT
T1
Pr
T0
CK
tWPST
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
RL = 5
WRITE (BL8) to READ (BC4/BL8)
Preliminary Data Sheet E0966E60 (Ver. 6.0)
96
ct
1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
VIH or VIL
2. Din n = data-in from column n; DOUT b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
READ command at T13 can be either BC4 or BL8 depending on MR0 bit [A1, A0] and A12 status at T13.
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
READ
NOP
CK
/CK
Command*3
NOP
WRIT
tBL = 4 clocks
Address*4
tWTR
Bank
Col b
Bank
Col n
tWPRE
tWPST
L
EO
DQS, /DQS
DQ*2
Din
n
Din
n+1
Din
n+2
Din
n+3
RL = 5
WL = 5
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
2. Din n = data-in from column n; Dout b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0.
READ command at T13 can be either BC4 or BL8 depending on MR0 bit [A1, A0] and A12 status at T13.
VIH or VIL
WRITE (BC4) to READ (BC4/BL8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
CK
Command*3
WRIT
Pr
/CK
NOP
NOP
WRIT
tCCD
Address*4
Bank
Col n
tBL = 4 clocks
tWR
tWTR
Bank
Col b
u
od
tWPRE
DQS, /DQS
Din
n
DQ*2
WL = 5
tWPST
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
Notes: 1. WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T4.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
97
ct
WRITE (BL8) to WRITE (BC4)
VIH or VIL
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
CK
/CK
Command*3
WRIT
NOP
NOP
WRIT
tCCD
tWR
tBL = 4 clocks
tWTR
Address*4
Bank
Col n
Bank
Col b
tWPRE
tWPST
tWPRE
tWPST
L
EO
DQS, /DQS
DQ*2
WL = 5
Din
n
Din
n+1
Din
n+2
Din
n+3
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
WL = 5
Notes: 1. WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T4.
VIH or VIL
WRITE (BC4) to WRITE (BL8)
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
98
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Write Timing Violations
Motivation
Generally, if timing parameters are violated, a complete reset/initialization procedure has to be initiated to make sure
the DRAM works properly.
However it is desirable for certain minor violations, that the DRAM is guaranteed not to "hang up" and error to be
limited to that particular operation.
For the following it will be assumed that there are no timing violations w.r.t to the write command itself (including
ODT etc.) and that it does satisfy all timing requirements not mentioned below.
L
EO
Data Setup and Hold Violations
Should the data to strobe timing requirements (tDS, tDH) be violated, for any of the strobe edges associated with a
write burst, then wrong data might be written to the memory location addressed with this write command.
In the example (Figure Write Timing Parameters) the relevant strobe edges for write burst A are associated with the
clock edges: T5, T5.5, T6, T6.5, T7, T7.5, T8, T8.5.
Subsequent reads from that location might result in unpredictable read data, however the DRAM will work properly
otherwise.
T0
CK
/CK
WRIT
Address*4
A
T3
T4
T5
T6
T7
T8
T9
WRIT
NOP
B
/CS
ODTL
T10
T11
T12
T13
T14
NOP
u
od
Command*3
Pr
Strobe to Strobe and Strobe to Clock Violations
Should the strobe timing requirements (tDQSH, tDQSL, tWPRE, tWPST) or the strobe to clock timing requirements
(tDSS, tDSH tDQSS) be violated for any of the strobe edges associated with a write burst, then wrong data might be
written to the memory location addressed with the offending write command. Subsequent reads from that location
might result in unpredictable read data, however the DRAM will work properly otherwise.
In the example (Figure Write Timing Parameters) the relevant strobe edges for write burst A are associated with the
clock edges: T4, T4.5, T5, T5.5, T6, T6.5, T7, T7.5, T8, T8.5 and T9. Any timing requirements starting and ending
on one of these strobe edges are T8, T8.5, T9, T9.5, T10, T10.5, T11, T11.5, T12, T12.5 and T13. Some edges are
associated with both bursts.
BL/2 + 2 + ODTL
WL
tDQSS
tDSS
tDSH
tDQSL
tDQSH
DQS, /DQS
tDH
tDS
DQ*2
tWPST
ct
tWPRE
VIH or VIL
Write Timing Parameters
Preliminary Data Sheet E0966E60 (Ver. 6.0)
99
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Write Data Mask
One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR3 SDRAMs, Consistent with the
implementation on DDR-I SDRAMs. It has identical timings on write operations as the data bits, and though used in
a uni-directional manner, is internally loaded identically to data bits to ensure matched system timing. DM is not
used during read cycles.
T1
T2
T3
T4
in
in
T5
T6
DQS
L
EO
/DQS
DQ
in
in
in
in
in
in
DM
Write mask latency = 0
Data Mask Timing
/CK
CK
[tDQSS(min.)]
Pr
Command
tWR
WRIT
NOP
WL
tDQSS
DQS, /DQS
DQ
in2 in3
u
od
DM
in0
WL
[tDQSS(max.)]
DQS, /DQS
DQ
DM
tDQSS
in0
in2 in3
Data Mask Function, WL = 5, AL = 0 shown
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
100
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Precharge
The precharge command is used to precharge or close a bank that has been activated. The precharge command is
triggered when /CS, /RAS and /WE are low and /CAS is high at the rising edge of the clock. The precharge
command can be used to precharge each bank independently or all banks simultaneously. Four address bits A10,
BA0, BA1 and BA2 are used to define which bank to precharge when the command is issued.
[Bank Selection for Precharge by Address Bits]
BA0
BA1
BA2
Precharged Bank(s)
L
L
L
L
Bank 0 only
L
H
L
L
Bank 1 only
L
L
H
L
Bank 2 only
L
H
H
L
Bank 3 only
L
L
L
H
Bank 4 only
L
H
L
H
Bank 5 only
L
L
H
H
Bank 6 only
L
H
H
H
Bank 7 only
H
×
×
×
All banks 0 to 7
L
EO
A10
Remark: H: VIH, L: VIL, ×: VIH or VIL
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
101
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Auto Precharge Operation
L
EO
Before a new row in an active bank can be opened, the active bank must be precharged using either the precharge
command or the auto precharge function. When a read or a write command is given to the DDR3 SDRAM, the /CAS
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at
the earliest possible moment during the burst read or write cycle. If A10 is low when the read or write Command is
issued, then normal read or write burst operation is executed and the bank remains active at the completion of the
burst sequence. If A10 is high when the Read or Write Command is issued, then the auto precharge function is
engaged. During auto precharge, a read Command will execute as normal with the exception that the active bank
will begin to precharge on the rising edge which is /CAS latency (CL) clock cycles before the end of the read burst.
Auto precharge can also be implemented during Write commands. The precharge operation engaged by the Auto
precharge command will not begin until the last data of the burst write sequence is properly stored in the memory
array.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent
upon /CAS latency) thus improving system performance for random data access. The /RAS lockout circuit internally
delays the Precharge operation until the array restore operation has been completed so that the auto precharge
command may be issued with any read or write command.
Burst Read with Auto Precharge
If A10 is high when a Read Command is issued, the Read with Auto precharge function is engaged. The DDR3
SDRAM starts an auto precharge operation on the rising edge which is (AL + BL/2) cycles later from the read with
AP command when tRAS (min.) is satisfied. If tRAS (min.) is not satisfied at the edge, the start point of auto
precharge operation will be delayed until tRAS (min.) is satisfied. A new bank active (command) may be issued to
the same bank if the following two conditions are satisfied simultaneously.
(1) The /RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.
Pr
ct
u
od
Burst Write with Auto precharge
If A10 is high when a write command is issued, the Write with auto precharge function is engaged. The DDR3
SDRAM automatically begins precharge operation after the completion of the burst writes plus write recovery time
(tWR). The bank undergoing auto precharge from the completion of the write burst may be reactivated if the
following two conditions are satisfied.
(1) The data-in to bank activate delay time (tWR + tRP) has been satisfied.
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
102
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Auto-Refresh
L
EO
When /CS, /RAS and /CAS are held low and /WE high at the rising edge of the clock, the chip enters the automatic
refresh mode (REF). All banks of the DDR3 SDRAM must be precharged and idle for a minimum of the precharge
time (tRP) before the auto-refresh command (REF) can be applied. An address counter, internal to the device,
supplies the bank address during the refresh cycle. No control of the external address bus is required once this
cycle has started.
When the refresh cycle has completed, all banks of the DDR3 SDRAM will be in the precharged (idle) state. A delay
between the auto-refresh command (REF) and the next activate command or subsequent auto-refresh command
must be greater than or equal to the auto-refresh cycle time (tRFC).
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of 8 refresh commands can be posted to any given DDR3 SDRAM, meaning that
the maximum absolute interval between any refresh command and the next Refresh command is 9 × tREFI.
T0
T1
T2
T3
/CK
CK
VIH
≥ tRP
CKE
Command
PRE
NOP
≥ tRFC
≥ tRFC
REF
REF
NOP
Any
Command
Auto-Refresh
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
103
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Self-Refresh
L
EO
The self-refresh command can be used to retain data in the DDR3 SDRAM, even if the rest of the system is powered
down. When in the self-refresh mode, the DDR3 SDRAM retains data without external clocking. The DDR3 SDRAM
device has a built-in timer to accommodate self-refresh operation. The Self-Refresh Entry (SELF) command is
defined by having /CS, /RAS, /CAS and CKE held low with /WE high at the rising edge of the clock.
Before issuing the self-refresh entry command, the DDR3 SDRAM must be idle with all bank precharge state with
tRP satisfied. Also, on-die termination must be turned off before issuing Self-refresh entry command, by either
registering ODT pin low “ODTL + 0.5tCK” prior to the self-refresh entry command or using MRS to MR1 command.
Once the self-refresh entry command is registered, CKE must be held low to keep the device in self-refresh mode.
The DLL is automatically disabled upon entering Self-refresh and is automatically enabled (including a DLL-Reset)
upon exiting self-refresh.
When the DDR3 SDRAM has entered self-refresh mode all of the external control signals, except CKE and /RESET,
are “don’t care”. For proper self-refresh operation, all power supply and reference pins (VDD, VDDQ, VSS, VSSQ,
VREFCA and VREFDQ) must be at valid levels. The DRAM initiates a minimum of one refresh command internally
within tCKESR period once it enters self-refresh mode.
The clock is internally disabled during self-refresh operation to save power. The minimum time that the DDR3
SDRAM must remain in self-refresh mode is tCKESR. The user may change the external clock frequency or halt the
external clock tCKSRE clock cycles after self-refresh entry is registered, however, the clock must be restarted and
stable tCKSRX clock cycles before the device can exit self-refresh operation. To protect DRAM internal delay on
CKE line to block the input signals, one NOP (or DESL) command is needed after self-refresh entry.
Pr
The procedure for exiting self-refresh requires a sequence of events. First, the clock must be stable tCKSRX prior to
CKE going back high. Once a Self-Refresh Exit command (SREX, combination of CKE going high and either NOP or
DESL on command bus) is registered, a delay of at least tXS must be satisfied before a valid command not requiring
a locked DLL can be issued to the device to allow for any internal refresh in progress. Before a command which
requires a locked DLL can be applied, a delay of at least tXSDLL and applicable ZQCAL function requirements
(TBD) must be satisfied.
Ta
Tb
u
od
CKE must remain high for the entire self-refresh exit period tXSDLL for proper operation except for self-refresh
reentry. Upon exit from self-refresh, the DDR3 SDRAM can be put back into Self-refresh mode after waiting at least
tXS period and issuing one refresh command (refresh period of tRFC). NOP or DESL commands must be registered
on each positive clock edge during the self-refresh exit interval tXS. ODT must be turned off during tXSDLL.
The use of Self-refresh mode introduces the possibility that an internally timed refresh event can be missed when
CKE is raised for exit from self-refresh mode. Upon exit from self-refresh, the DDR3 SDRAM requires a minimum of
one extra refresh command before it is put back into self-refresh mode.
Tc Tc+1Tc+2
CK, /CK
Td
Te
tCKSRE
tRP
Tf Tf+1 Tf+2
tCKSRX
PALL
tXS
SELF NOP
SREX
CKE
ODTLoff + 0.5 x tCK
ODT
Only NOP or DESL commands.
Valid commands not requiring a locked DLL.
Valid commands requiring a locked DLL.
One NOP or DESL commands.
Self-Refresh Entry and Exit Timing
Preliminary Data Sheet E0966E60 (Ver. 6.0)
104
*1
*2
*2
Valid Valid
*3 *3
Valid Valid
ct
tCKESR
Notes: 1.
2.
3.
4.
Th Th+1
tXSDLL
*4
Command
Tg Tg+1
VIH or VIL
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Power-Down Mode
Power-down is synchronously entered when CKE is registered low (along with NOP or DESL command). CKE is not
allowed to go low while mode register set command, MPR operations, ZQCAL operations, DLL locking or read / write
operation are in progress. CKE is allowed to go low while any of other operations such as row activation, precharge
or auto precharge and refresh are in progress, but power-down IDD spec will not be applied until finishing those
operations.
L
EO
The DLL should be in a locked state when power-down is entered for fastest power-down exit timing. If the DLL is
not locked during power-down entry, the DLL must be reset after exiting power-down mode for proper read operation
and synchronous ODT operation. DRAM design provides all AC and DC timing and voltage specification as well
proper DLL operation with any CKE intensive operations as long as DRAM controller complies with DRAM
specifications.
During power-down, if all banks are closed after any in-progress commands are completed, the device will be in
precharge power-down mode; if any bank is open after in-progress commands are completed, the device will be in
active power-down mode.
Entering power-down deactivates the input and output buffers, excluding CK, /CK, ODT, CKE and /RESET. To
protect DRAM internal delay on CKE line to block the input signals, multiple NOP or DESL commands are needed
during the CKE switch off and cycle(s) after this timing period are defined as tCPDED. CKE_low will result in
deactivation of command and address receivers after tCPDED has expired.
[Power-Down Entry Definitions]
Status of DRAM
MR0 bit A12
DLL
PD Exit
Relevant Parameters
Active
(A bank or more Open)
Don’t Care
On
Fast
tXP to any valid command
0
Precharged
(All Banks Precharged)
1
Pr
Precharged
(All banks Precharged)
Off
Slow
tXP to any valid command. Since it is in
precharge state, commands here will be ACT,
AR, MRS, PRE or PALL .
tXPDLL to commands who need DLL to operate,
such as READ, READA or ODT control line.
On
Fast
tXP to any valid command
u
od
Also the DLL is disabled upon entering precharge power-down for slow exit mode, but the DLL is kept enabled
during precharge power-down for fast exit mode or active power-down. In power-down mode, CKE low, RESET high
and a stable clock signal must be maintained at the inputs of the DDR3 SDRAM, and ODT should be in a valid state
but all other input signals are “Don’t Care” (If RESET goes low during power-down, the DRAM will be out of PD
mode and into reset state). CKE low must be maintained until tPD has been satisfied. Power-down duration is limited
by 9 times tREFI of the device.
The power-down state is synchronously exited when CKE is registered high (along with a NOP or DESL command).
CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be applied with
power-down exit latency, tXP and/or tXPDLL after CKE goes high. Power-down exit latency is defined at AC
Characteristics table of this data sheet.
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
105
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Timing Diagrams for Proposed CKE with Power-Down Entry, Power-Down Exit
T0
/CK
CK
Command
T1
T5
T6
T7
T8
T9
READ
BA
T10
T11
NOP
NOP
Tx
Tx+1
Valid
tCPDED
tRDPDEN
tIS
VIH
L
EO
CKE
T12
RL = CL + AL = 5 (AL = 0)
tPD
DQ(BL8)
out
0
out
1
out
2
DQ(BC4)
out
0
out out
1
2
out out
3
4
out out
5
6
out
7
out
3
Power-Down Entry after Read and Read with Auto Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T14
T15
T16
T17
T18
Tn
CK
/CK
Command
BA
NOP
NOP
Valid
tCPDED
tIS
Pr
CKE
NOP
WRITA
tWRAPDEN
WL=5
DQ(BL8)
tWR*
in
0
Note: tWR is programmed through MRS.
in
2
in
3
in
4
in
5
in
6
in
7
u
od
in
0
DQ(BC4)
in
1
tPD
in
1
in
2
in
3
Start Internal
Precharge
Power-Down Entry After Write with Auto Precharge
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
106
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
Tx
Tx+1 Tx+2 Tx+3
CK
/CK
Command
WRITE
BA
NOP
NOP
Valid
tCPDED
tIS
CKE
L
EO
tWRPDEN
WL=5
tWR
DQ(BL8)
in
0
in
1
in
2
in
3
DQ(BC4)
in
0
in
1
in
2
in
3
in
4
in
5
in
6
tPD
in
7
Power-Down Entry after Write
T0
T1
Tn Tn+1
Tx
Ty
CK
/CK
Pr
tPD
tIH
CKE
tIH
tIS
tIS
tCPDED
Command
tCKE (min.)
Valid NOP NOP
NOP NOP NOP NOP NOP Valid NOP NOP NOP NOP N
u
od
tXP
Enter power-down mode
Exit power-down
Note: Valid command at T0 is ACT, NOP, DESL or precharge with still one bank remaining open after completion of
precharge command.
Active Power-Down Entry and Exit Timing Diagram
T0
T1
Tn
CK
/CK
tPD
tIH
Tn+1
Tx
tIH
tIS
tIS
tCPDED
NOP NOP
tCKE (min.)
ct
CKE
Command
Ty
NOP NOP NOP NOP NOP Valid NOP NOP NOP1NOP N
tXP
Exit power-down
Enter power-down mode
Precharge Power-Down (Fast Exit Mode) Entry and Exit
Preliminary Data Sheet E0966E60 (Ver. 6.0)
107
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
Tn
Tn+1
Tx
Ty
CK
/CK
tIH
tIH
CKE
tIS
tIS
tPD
tCPDED
tCKE (min.)
L
EO
Command
NOP NOP
NOP
NOP
NOP
NOP NOP
NOP NOP
Valid NOP Valid
NOP NO
tXP
tXPDLL
Exit power-down
Enter power-down mode
Precharge Power-Down (Slow Exit Mode) Entry and Exit
T0
T1
T2
T3
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
Command
REF
tCPDED
Pr
tREFPDEN
tIS
CKE
u
od
Refresh Command to Power-Down Entry
T0
T1
T2
T3
ACT
NOP
NOP
CK
/CK
Command
T4
Tn
Tn+1
Tn+2
End
tCPDED
tPD
ct
tACTPDEN
tIS
CKE
Active Command to Power-Down Entry
Preliminary Data Sheet E0966E60 (Ver. 6.0)
108
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
Tn+6
Tn+7
End
CK
/CK
PRE/
PALL
Command
tCPDED
tPREPDEN
tIS
L
EO
CKE
Precharge/Precharge All Command to Power-Down Entry
T0
T1
T2
T3
Tn
Tn+1
Tn+2
MRS
NOP
NOP
NOP
NOP
NOP
Tn+3
Tn+4
Tn+5
CK
/CK
Command
tCPDED
tMRSPDEN
Pr
tIS
CKE
MRS Command to Power-Down Entry
ct
u
od
Preliminary Data Sheet E0966E60 (Ver. 6.0)
109
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Timing Values tXXXPDEN Parameters
Status of DRAM
Last Command before CKE_low
Parameter
Parameter Value
Unit
Idle or Active
Activate
tACTPDEN
1
nCK
Idle or Active
Precharge
tPRPDEN
1
nCK
Active
READ/READA
tRDPDEN
RL + 4 + 1
Active
WRIT for BL8MRS, BL8OTF, BC4OTF
tWRPDEN
WL + 4 + (tWR/tCK (avg)) *
1
nCK
tWRPDEN
1
nCK
Active
WRIT for BC4MRS
Active
WRITA for BL8MRS, BL8OTF, BC4OTF
nCK
WL + 2 + (tWR/tCK (avg))*
2
nCK
2
WL + 4 + WR* + 1
WRITA for BC4MRS
tWRAPDEN
WL + 2 + WR* + 1
nCK
Idle
Refresh
tREFPDEN
1
nCK
Idle
Mode Register Set
tMRSPDEN
tMOD
L
EO
tWRAPDEN
Active
Notes: 1. tWR is defined in ns, for calculation of tWRPDEN, it is necessary to round up tWR / tCK to next integer.
2. WR in clock cycles as programmed in mode register.
Power-Down Entry and Exit Clarification
Case 1:
When CKE registered low for power-down entry, tPD must be satisfied before CKE can be registered hight as
power-down exit.
Case 1a:
After power-down exit, tCKE must be satisfied before CKE can be registered low again.
/CK
Pr
T0
CK
T1
Tn
tIH
CKE
Tx
Ty
tIH
u
od
tIS
tIS
tPD
tCPDED
Command
Tn+1
NOP NOP NOP
tCKE
NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP N
Enter power-down
Exit power-down
Power-Down Entry/Exit Clarifications (1)
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
110
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Case 2:
For certain CKE intensive operations, for example, repeated "PD Exit - Refresh - PD Entry" sequence, the number of
clock cycles between PD Exit and PD Entry may be insufficient to keep the DLL updated. Therefore the following
conditions must be met in addition to tPD in order to maintain proper DRAM operation when Refresh commands is
issued in between PD Exit and PD Entry.
Power-down mode can be used in conjunction with Refresh command if the following conditions are met:
1. tXP must be satisfied before issuing the command
2. tXPDLL must be satisfied (referenced to registration of PD exit) before next power-down can be entered.
T0
T1
L
EO
CK
Tn Tn+1
Tx
Ty
/CK
tIH
tIH
CKE
tIS
tIS
tCPDED
tXPDLL (min.)
tCKE (min.)
tPD
Command
NOP NOP NOP
NOP
REF NOP NOP NOP NOP NOP NOP NOP
tXP
Exit power-down
Pr
Enter power-down
NOP
Power-Down Entry/Exit Clarifications (2)
Case 3:
If an early PD Entry is issued after Refresh command, once PD Exit is issued, NOP or DESL with CKE high must be
issued until tRFC from the refresh command is satisfied. This means CKE cannot be de-asserted twice within tRFC
window.
T1
Tn
/CK
tIH
Tn+1
Tx
Ty
tIH
CKE
tIS
tIS
tPD
tCPDED
REF NOP NOP
tXPDLL
tCKE (min.)
NOP NOP NOP NOP NOP NOP NOP NOP NOP Valid N
tRFC (min.)
Enter power-down
Exit power-down
ct
Command
u
od
T0
CK
Note: * Synchronous ODT Timing starts at the end of tXPDLL (min.)
Power-Down Entry/Exit Clarifications (3)
Preliminary Data Sheet E0966E60 (Ver. 6.0)
111
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Input Clock Frequency Change during Precharge Power-Down
L
EO
Once the DDR3 SDRAM is initialized, the DDR3 SDRAM requires the clock to be “stable” during almost all states of
normal operation. This means once the clock frequency has been set and is to be in the “stable state”, the clock
period is not allowed to deviate except for what is allowed for by the clock jitter and SSC (Spread Spectrum
Clocking) specifications.
The input clock frequency can be changed from one stable clock rate to another stable clock rate under two
conditions: (1) self-refresh mode and (2) precharge power-down mode. Outside of these two modes, it is illegal to
change the clock frequency. For the first condition, once the DDR3 SDRAM has been successfully placed in to SelfRefresh mode and tCKSRE has been satisfied, the state of the clock becomes a don’t care. Once a don’t care,
changing the clock frequency is permissible, provided the new clock frequency is stable prior to tCKSRX. When
entering and exiting Self-Refresh mode for the sole purpose of changing the clock frequency, the self-refresh entry
and exit specifications must still be met as outlined in Self-Refresh section.
The second condition is when the DDR3 SDRAM is in Precharge Power-down mode (either fast exit mode or slow
exit mode.) ODT must be at a logic low ensuring RTT is in an off state prior to entering Precharge Power-down mode
and CKE must be at a logic low. A minimum of tCKSRE must occur after CKE goes low before the clock frequency
may change. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum
operating frequency specified for the particular speed grade. During the input clock frequency change, ODT and
CKE must be held at stable low levels. Once the input clock frequency is changed, stable new clocks must be
provided to the DRAM tCKSRX before Precharge Power-down may be exited; after Precharge Power-down is exited
and tXP has expired, the DLL must be RESET via MRS. Depending on the new clock frequency additional MRS
commands may need to be issued to appropriately set the WR, CL, and CWL with CKE continuously registered high.
During DLL re-lock period, ODT must remain low. After the DLL lock time, the DRAM is ready to operate with new
clock frequency. This process is depicted in the figure Clock Frequency Change in Precharge Power-Down Mode.
Previous clock frequency
Pr
T0
/CK
CK
T1
T2
Ta
Tb
Tc
Tc+1
Td
Td+1
NOP
MRS
Te
Te+1
tIS
tIH
CKE
New clock frequency
tCKSRE
tCKSRX
tCPDED
NOP
NOP
NOP
NOP
u
od
Command
NOP
DLL
RESET
Address
ODT
High-Z
High-Z
DQ
Valid
tXP
tAOFPD/tAOF
DQS, /DQS
Valid
Enter precharge
power-down mode
Frequency
change
Exit precharge
power-down mode
ct
DM
tDLLK
Notes: 1. Applicable for both slow exit and fast exit precharge power-down.
2. tCKSRE and tCKSRX are self-refresh mode specifications but the values
they represent are applicable here.
3. tAOFPD and tAOF must be satisfied and outputs high-z prior to T1;
refer to ODT timing for exact requirements.
Clock Frequency Change in Precharge Power-Down Mode
Preliminary Data Sheet E0966E60 (Ver. 6.0)
112
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
On-Die Termination (ODT)
ODT (On-Die Termination) is a feature of the DDR3 SDRAM that allows the DRAM to turn on/off termination
resistance for each DQ, DQS, /DQS and DM for ×4 and ×8 configuration (and TDQS, /TDQS for ×8 configuration,
when enabled via A11=1 in MR1) via the ODT control pin. For ×16 configuration ODT is applied to each DQU, DQL,
DQSU, /DQSU, DQSL, /DQSL, DMU and DML signal via the ODT control pin. The ODT feature is designed to
improve signal integrity of the memory channel by allowing the DRAM controller to independently turn on/off
termination resistance for any or all DRAM devices.
L
EO
The ODT feature is turned off and not supported in Self-Refresh mode.
A simple functional representation of the DRAM ODT feature is shown in figure Functional Representation of ODT.
ODT
To other
circuitry
like
RCV, ...
VDDQ/2
RTT
Switch
DQ, DQS, DM, TDQS
Functional Representation of ODT
Pr
The switch is enabled by the internal ODT control logic, which uses the external ODT pin and other control
information, see below. The value of RTT is determined by the settings of Mode Register bits (see MR1
programming figure in the section Programming the Mode Register). The ODT pin will be ignored if the Mode
Register MR1 is programmed to disable ODT and in self-refresh mode.
[Termination Truth Table]
u
od
ODT Mode Register and ODT Truth Table
The ODT Mode is enabled if either of MR1 bits A2 or A6 or A9 are non-zero. In this case the value of RTT is
determined by the settings of those bits .
Application: Controller sends WRIT command together with ODT asserted.
• One possible application: The rank that is being written to provide termination.
• DRAM turns ON termination if it sees ODT asserted (except ODT is disabled by MR)
• DRAM does not use any write or read command decode information
• The Termination Truth Table is shown in the Termination Truth Table
ODT pin
DRAM Termination State
0
OFF
1
ON, (OFF, if disabled by MR1 bits A2, A6 and A9 in general)
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
113
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Synchronous ODT Mode
Synchronous ODT mode is selected whenever the DLL is turned on and locked. Based on the power-down
definition, these modes are:
• Active mode
• Idle mode with CKE high
• Active power-down mode (regardless of MR0 bit A12)
• Precharge power-down mode if DLL is enabled during precharge power-down by MR0 bit A12.
L
EO
In synchronous ODT mode, RTT will be turned on or off ODTLon clock cycles after ODT is sampled high by a rising
clock edge and turned off ODTLoff clock cycles after ODT is registered low by a rising clock edge. The ODT latency
is tied to the write latency (WL) by: ODTLon = WL – 2; ODTLoff = WL – 2.
ODT Latency and Posted ODT
In Synchronous ODT mode, the Additive Latency (AL) programmed into the Mode Register (MR1) also applies to the
ODT signal. The DRAM internal ODT signal is delayed for a number of clock cycles defined by the Additive Latency
(AL) relative to the external ODT signal.
ODTLon = CWL + AL − 2; ODTLoff = CWL + AL − 2. For details, refer to DDR3 SDRAM latency definitions.
[ODT Latency Table]
Parameter
Symbol
Value
Unit
ODT turn-on Latency
ODTLon
WL – 2 = CWL + AL – 2
nCK
ODT turn-off Latency
ODTLoff
WL – 2 = CWL + AL – 2
nCK
Pr
ct
u
od
Synchronous ODT Timing Parameters
In synchronous ODT mode, the following timing parameters apply (see Synchronous ODT Timing Examples (1)):
ODTL, tAON,(min.),max, tAOF,(min.),(max.) Minimum RTT turn-on time (tAON min) is the point in time when the
device leaves high impedance and ODT resistance begins to turn on. Maximum RTT turn-on time (tAON max) is the
point in time when the ODT resistance is fully on. Both are measured from ODTLon.
Minimum RTT turn-off time (tAOF min ) is the point in time when the device starts to turn-off the ODT resistance.
Maximum RTT turn-off time (tAOF max) is the point in time when the on-die termination has reached high
impedance. Both are measured from ODTLoff.
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the
SDRAM with ODT high, then ODT must remain high until ODTH4 (BC4) or ODTH8 (BL8) after the Write command
(see figure Synchronous ODT Timing Examples (2)). ODTH4 and ODTH8 are measured from ODT registered high
to ODT registered low or from the registration of a Write command until ODT is registered low.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
114
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15
END
CK
/CK
CKE
ODTH4 (min.)
ODT
AL = 3
AL = 3
IntODT
L
EO
ODTLon = CWL + AL – 2
ODTLoff = CWL + AL – 2
CWL – 2
tAON (max.)
tAON (min.)
RTT
tAOF (max.)
tAOF (min.)
RTT
Synchronous ODT Timing Examples (1): AL=3, CWL = 5;
ODTLon = AL + CWL - 2 = 6; ODTLoff = AL + CWL - 2 = 6
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18
CK
/CK
CKE
Command
WRS4
Pr
ODTH4
ODTH4
ODT
ODTH4
ODTLoff = WL – 2
ODTLoff = WL – 2
ODTLon = WL – 2
u
od
ODTLon = WL – 2
tAON (max.)
tAON (min.)
DRAM_RTT
RTT
tAOF (max.)
tAOF (min.)
tAOF (max.)
tAOF (min.)
RTT
tAON (max.)
tAON (min.)
Synchronous ODT Timing Examples (2)*: BC4, WL = 7
ct
ODT must be held high for at least ODTH4 after assertion (T1); ODT must be kept high ODTH4 (BC4) or ODTH8
(BL8) after write command (T7). ODTH is measured from ODT first registered high to ODT first registered low, or
from registration of write command with ODT high to ODT registered low. Note that although ODTH4 is satisfied from
ODT registered high at T6 ODT must not go low before T11 as ODTH4 must also be satisfied from the registration of
the write command at T7.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
115
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
ODT during Reads
As the DDR3 SDRAM cannot terminate and drive at the same time, RTT must be disabled at least half a clock cycle
before the read preamble by driving the ODT pin low appropriately. RTT may nominally not be enabled until one
clock cycle after the end of the post-amble as shown in the example in the figure below.
Note that ODT may be disabled earlier before the Read and enabled later after the Read than shown in this example
in the figure below.
ODT must be disabled externally during Reads by driving ODT low.
(example: CL = 6; AL = CL - 1 = 5; RL = AL + CL = 11; CWL = 5; ODTLon = CWL + AL -2 = 8;
ODTLoff = CWL + AL - 2 = 8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12
T13 T14 T15 T16 End
L
EO
CK
/CK
Command
Address
READ
A
RL = AL + CL
ODT
ODTLoff = WL – 2 = CWL + AL – 2
tAON (min.)
tAON (max.)
RTT
Pr
DQ
tAOF (max.)
tAOF (min.)
RTT
DRAM_RTT
DQS, /DQS
ODTLon = WL – 2 = CWL + AL – 2
out out out out out out out out
0 1 2 3 4 5 6 7
Example of ODT during Reads
ct
u
od
Preliminary Data Sheet E0966E60 (Ver. 6.0)
116
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
L
EO
Dynamic ODT
In certain application cases and to further enhance signal integrity on the data bus, it is desirable that the termination
strength of the DDR3 SDRAM can be changed without issuing an MRS command. This requirement is supported by
the “Dynamic ODT” feature as described as follows:
Functional Description:
The Dynamic ODT mode is enabled if bit A9 or A10 of MR2 is set to ’1’. The function and is described as follows:
• Two RTT values are available: RTT_Nom and RTT_WR.
⎯ The value for RTT_Nom is pre-selected via bits A[9,6,2] in MR1
⎯ The value for RTT_WR is pre-selected via bits A[10,9] in MR2
• During operation without write commands, the termination is controlled as follows:
⎯ Nominal termination strength RTT_Nom is selected.
⎯ Termination on/off timing is controlled via ODT pin and latencies ODTLon and ODTLoff.
• When a write command (WRIT, WRITA, WRS4, WRS8, WRAS4, WRAS8) is registered, and if Dynamic ODT is
enabled, the termination is controlled as follows:
⎯ A latency ODTLcnw after the write command, termination strength RTT_WR is selected.
⎯ A latency ODTLcwn8 (for BL8, fixed by MRS or selected OTF) or ODTLcwn4 (for BC4, fixed by MRS or selected
OTF) after the write command, termination strength RTT_Nom is selected.
⎯ Termination on/off timing is controlled via ODT pin and ODTLon, ODTLoff.
Table Latencies and Timing Parameters Relevant for Dynamic ODT shows latencies and timing parameters, which
are relevant for the on-die termination control in Dynamic ODT mode:
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a write command is registered by the SDRAM
with ODT high, then ODT must remain high until ODTH4 (BC4) or ODTH8 (BL8) after the write command (see the
figure Synchronous ODT Timing Examples (2)). ODTH4 and ODTH8 are measured from ODT registered high to
ODT registered low or from the registration of a write command until ODT is registered low.
Pr
[Latencies and Timing Parameters Relevant for Dynamic ODT]
Parameters
ODT turn-on Latency
ODT turn-off Latency
ODTLoff
ODTLcnw
Registering external
ODT signal high
Registering external
ODT signal low
Registering external
write command
Defined to
Definition for all DDR3
speed bins
Unit
Turning termination on
ODTLon = WL – 2.0
nCK
Turning termination off
ODTLoff = WL – 2.0
nCK
Change RTT strength from
ODTLcnw = WL – 2.0
RTT_Nom to RTT_WR
nCK
ODTLcwn4
Registering external
write command
Change RTT strength from ODTLcwn4 =
RTT_WR to RTT_Nom
4 + ODTLoff
nCK
ODTLcwn8
Registering external
write command
Change RTT strength from ODTLcwn8 =
RTT_WR to RTT_Nom
6 + ODTLoff
nCK
ODTH4
registering ODT high ODT registered low
ODTH4
ODTH8
tADC
registering Write with
ODT registered low
ODT high
registering Write with
ODT registered low
ODT high
ODTLcnw
RTT valid
ODTLcwn
Preliminary Data Sheet E0966E60 (Ver. 6.0)
117
ODTH4 (min.) = 4
nCK
ODTH4 (min.) = 4
nCK
ODTH8 (min.) = 6
nCK
0.3ns to 0.7ns
tCK (avg)
ct
RTT change skew
ODTLon
Defined from
u
od
ODT latency for changing
from RTT_Nom to RTT_WR
ODT latency for change
from RTT_WR to RTT_Nom
(BC4)
ODT latency for change
from RTT_WR to RTT_Nom
(BL8)
Minimum ODT high time after
ODT assertion
Minimum ODT high time after
Write (BC4)
Minimum ODT high time after
Write (BL8)
Symbols
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Mode Register Settings for Dynamic ODT Mode:
The table Mode Register for RTT Selection shows the Mode Register bits to select RTT_Nom and RTT_WR values.
[Mode Register for RTT Selection]
MR1
MR2
A9
A6
A2
RTT_Nom
(RZQ)
RTT_Nom
(Ω)
A10
A9
0
0
0
off
off
0
0
0
0
1
RZQ/4
60
1
0
RZQ/2
0
1
1
RZQ/6
2
RTT_WR*
(Ω)
0
1
RZQ/4
60
1
0
RZQ/2
120
40
1
1
Reserved
Reserved
20
⎯
⎯
⎯
⎯
30
⎯
⎯
⎯
⎯
Reserved
Reserved
⎯
⎯
⎯
⎯
Reserved
Reserved
⎯
⎯
⎯
⎯
1
0
0
RZQ/12*
1
0
1
RZQ/8*
1
1
0
1
1
1
2
1
Dynamic ODT OFF: Write does not
affect RTT value
120
L
EO
0
RTT_WR
(RZQ)
Notes: 1. RZQ = 240Ω.
2. If RTT_Nom is used during WRITEs, only the values RZQ/2, RZQ/4 and RZQ/6 are allowed.
ODT Timing Diagrams
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19
Pr
CK
/CK
ODTLcnw
Command
WRS4
ODTH4
ODTH4
ODTLon
ODTLoff
tAON (min.)
RTT
u
od
ODT
RTT_Nom
tADC (min.)
RTT_WR
tAON (max.)
tADC (max.)
tADC (min.)
tAOF (min.)
RTT_Nom
tADC (max.)
tAOF (max.)
ODTLcwn4
DQS, /DQS
in in in in
0 1 2 3
DQ
ct
WL
Dynamic ODT: Behavior with ODT Being Asserted Before and after the Write*
Note: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. ODTH4 applies to first registering ODT high and to the
registration of the write command. In this example ODTH4 would be satisfied if ODT is low at T8 (4 clocks
after the write command).
Preliminary Data Sheet E0966E60 (Ver. 6.0)
118
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
Command
ODTH4
ODT
ODTLon
ODTLoff
L
EO
tAON (min.)
tAOF (min.)
RTT_Nom
RTT
tAON (max.)
tAOF (max.)
DQS, /DQS
DQ
Dynamic ODT*: Behavior without Write Command; AL = 0, CWL = 5
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied;
ODT registered low at T5 would also be legal.
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
Command
WRS8
Pr
ODTLcnw
ODTH8
ODT
ODTLon
ODTLoff
u
od
tAON (min.)
tAOF (min.)
RTT
RTT_WR
tADC (max.)
tAOF (max.)
ODTLcwn8
DQS, /DQS
in
0
DQ
WL
in
1
in
2
in
3
in
4
in
5
in
6
in
7
ct
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for Duration of 6 Clock Cycles
Note: Example for BL8 (via MRS or OTF), AL = 0, CWL = 5. In this example ODTH8 = 6 is exactly satisfied.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
119
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
T0
CK
/CK
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
ODTLcnw
Command
WRS4
ODTH4
ODT
ODTLon
ODTLoff
L
EO
tAON (min.)
tAOF (min.)
tADC (min.)
RTT
RTT_WR
RTT_Nom
tADC (max.)
tADC (max.)
tAOF (max.)
ODTLcwn4
DQS, /DQS
in
0
DQ
in
1
in
2
in
3
WL
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for a Duration of 6 Clock Cycles, Example for BC4 (via MRS or OTF), AL = 0, CWL = 5.
T0
T1
CK
/CK
Pr
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied;
ODT registered low at T5 would also be legal.
T2
T3
T4
T5
T6
T7
T8
T9
ODTLcnw
WRS4
ODTH4
ODT
ODTLon
u
od
Command
ODTLoff
tAON (min.)
tAOF (min.)
RTT
RTT_WR
tAOF (max.)
tADC (max.)
in
0
DQ
WL
in
1
ct
ODTLcwn4
DQS, /DQS
in
2
in
3
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for Duration of 4 Clock Cycles
Note: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. In this example ODTH4 = 4 is exactly satisfied.
Preliminary Data Sheet E0966E60 (Ver. 6.0)
120
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
L
EO
Asynchronous ODT Mode
Asynchronous ODT mode is selected when DRAM runs in DLL-on mode, but DLL is temporarily disabled (i.e. frozen)
in precharge power-down (by MR0 bit A12).
Precharge power-down mode if DLL is disabled during precharge power-down by MR0 bit A12.
In asynchronous ODT timing mode, internal ODT command is not delayed by Additive Latency (AL) relative to the
external ODT command.
In asynchronous ODT mode, the following timing parameters apply (see figure Asynchronous ODT Timings):
tAONPD (min.), (max.), tAOFPD (min.),(max.)
Minimum RTT turn-on time (tAONPD (min.)) is the point in time when the device termination circuit leaves high
impedance state and ODT resistance begins to turn on. Maximum RTT turn-on time (tAONPD (max.)) is the point in
time when the ODT resistance is fully on. tAONPD (min.) and tAONPD (max.) are measured from ODT being
sampled high.
Minimum RTT turn-off time (tAOFPD (min.)) is the point in time when the devices termination circuit starts to turn off
the ODT resistance. Maximum ODT turn-off time (tAOFPD (max.)) is the point in time when the on-die termination
has reached high impedance. tAOFPD (min.) and tAOFPD (max.) are measured from ODT being sampled low.
CK
/CK
CKE
tIH
tIH
tIS
tIS
ODT
tAOFPD (min.)
tAONPD (max.)
RTT
Pr
DRAM_RTT
tAONPD (min.)
tAOFPD (max.)
Asynchronous ODT Timings on DDR3 SDRAM with Fast ODT Transition: AL is Ignored
In precharge power-down, ODT receiver remains active, however no read or write command can be issued, as the
respective address/command receivers may be disabled.
Symbol
Parameters
tAONPD
tAOFPD
u
od
[Asynchronous ODT Timing Parameters for All Speed Bins]
min.
max.
Unit
Asynchronous RTT turn-on delay (power-down with DLL frozen)
1
9
ns
Asynchronous RTT turn-off delay (power-down with DLL frozen)
1
9
ns
[ODT for Power-Down (with DLL Frozen) Entry and Exit Transition Period]
min.
ODT to RTT turn-on delay
min {ODTLon × tCK + tAON(min.);
tAONPD(min.) }
min { (WL − 2.0) × tCK + tAON(min.);
tAONPD(min.) }
min { ODTLoff × tCK +tAOF(min.);
tAOFPD(min.) }
min { (WL − 2.0) × tCK +tAOF(min.);
tAOFPD(min.) }
ODT to RTT turn-off delay
tANPD
max.
WL − 1.0
Preliminary Data Sheet E0966E60 (Ver. 6.0)
121
max {ODTLon × tCK + tAON(max.);
tAONPD(max.) }
max {(WL − 2.0) × tCK + tAON(max.);
tAONPD(max.) }
max { ODTLoff × tCK + tAOF(max.);
tAOFPD(max.) }
max {(WL − 2.0) × tCK + tAOF(max.);
tAOFPD(max.) }
ct
Description
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
L
EO
Synchronous to Asynchronous ODT Mode Transition during Power-Down Entry
If DLL is selected to be frozen in precharge power-down mode by the setting of bit A12 in MR0 to 0 there is a
transition period around power-down entry, where the DDR3 SDRAM may show either synchronous or
asynchronous ODT behavior.
This transition period ends when CKE is first registered low and starts tANPD before that. If there is a Refresh
command in progress while CKE goes low, then the transition period ends tRFC after the refresh command. tANPD
is equal to (WL − 1.0) and is counted (backwards) from the clock cycle where CKE is first registered low.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPD(min.)
and (ODTLon × tCK + tAON(min.)) and as late as the larger of tAONPD(max.) and (ODTLon × tCK + tAON(max.)).
ODT de-assertion during the transition period may result in an RTT change as early as the smaller of tAOFPD(min.)
and (ODTLoff × tCK + tAOF(min.)) and as late as the larger of tAOFPD(max.) and (ODTLoff × tCK + tAOF(max.)).
Note that, if AL has a large value, the range where RTT is uncertain becomes quite large.
The figure below shows the three different cases: ODT_A, synchronous behavior before tANPD; ODT_B has a state
change during the transition period; ODT_C shows a state change after the transition period.
CK
/CK
Command
REF
NOP NOP
CKE
PD entry transition period
tANPD
ODT
ODT_A_sync
ODTLoff
tRFC
Pr
tAOF (max.)
tAOF (min.)
DRAM_RTT_A_sync
ODT_B_tran
RTT
ODTLoff + tAOFPD (max.)
tAOFPD (max.)
ODTLoff + tAOFPD (min.)
u
od
tAOFPD (min.)
DRAM_RTT_B_tran
ODT_C_async
tAOFPD (max.)
tAOFPD (min.)
DRAM_RTT_C_async
RTT
Synchronous to Asynchronous Transition During Precharge Power-Down (with DLL Frozen) Entry
(AL = 0; CWL = 5; tANPD = WL − 1 = 4)
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
122
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
L
EO
Asynchronous to Synchronous ODT Mode Transition during Power-Down Exit
If DLL is selected to be frozen in precharge power-down mode by the setting of bit A12 in MR0 to 0, there is also a
transition period around power-down exit, where either synchronous or asynchronous response to a change in ODT
must be expected from the DDR3 SDRAM.
This transition period starts tANPD before CKE is first registered high, and ends tXPDLL after CKE is first registered
high. tANPD is equal to (WL − 1.0) and is counted backward from the clock cycle where CKE is first registered high.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPD(min.)
and (ODTLon × tCK + tAON(min.)) and as late as the larger of tAONPD(max.) and (ODTLon × tCK + tAON(max.)).
ODT de-assertion during the transition period may result in an RTT change as early as the smaller of tAOFPD(min.)
and (ODTLoff × tCK + tAOF(min.)) and as late as the larger of tAOFPD(max.) and (ODTLoff × tCK + tAOF(max.)).
See ODT for Power-Down (with DLL Frozen) Entry and Exit Transition Period table.
Note that, if AL has a large value, the range where RTT is uncertain becomes quite large. The figure below shows
the three different cases: ODT_C, asynchronous response before tANPD; ODT_B has a state change of ODT during
the transition period; ODT_A shows a state change of ODT after the transition period with synchronous response.
T1
T3
T5
T7
T9
T11 T13 T15 T17 T19 T21 T23 T25 T27 T29 T31 T33 T35
CK
/CK
Command
NOP NOP
CKE
PD exit transition period
tANPD
ODT_C_async
tXPDLL
tAOFPD (max.)
tAOFPD (min.)
ODT_B_tran
Pr
DRAM_RTT_C_async
RTT
tAOFPD (min.)
ODTLoff + tAOF (min.)
u
od
ODTLoff + tAOF (max.)
tAOFPD (max.)
DRAM_RTT_B_tran
ODT_A_sync
ODTLoff
tAOF (max.)
tAOF (min.)
DRAM_RTT_A_sync
RTT
ct
Asynchronous to Synchronous Transition during Precharge Power-Down (with DLL Frozen) Exit
(CL = 6; AL = CL - 1; CWL = 5; tANPD= WL − 1 = 9)
Preliminary Data Sheet E0966E60 (Ver. 6.0)
123
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
L
EO
Asynchronous to Synchronous ODT Mode during Short CKE high and Short CKE Low Periods
If the total time in precharge power-down state or idle state is very short, the transition periods for power-down entry
and power-down exit may overlap. In this case the response of the DDR3 SDRAM RTT to a change in ODT state at
the input may be synchronous OR asynchronous from the start of the power-down entry transition period to the end
of the PD exit transition period (even if the entry period ends later than the exit period).
If the total time in idle state is very short, the transition periods for power-down exit and power-down entry may
overlap. In this case the response of the DDR3 SDRAM RTT to a change in ODT state at the input may be
synchronous OR asynchronous from the start of the power-down exit transition period to the end of the power-down
entry transition period.
Note that in the bootom part of figure below it is assumed that there was no refresh command in progress when idle
state was entered.
CK
/CK
Command
CKE
REF
NOP
NOP
NOP NOP
tANPD
tRFC
PD entry transition period
PD exit transition period
tANPD
tXPDLL
short CKE low transition period
CKE
tXPDLL
Pr
tANPD
tANPD
tXPDLL
short CKE high transition period
Transition Period for Short CKE Cycles with Entry and Exit Period Overlapping
(AL = 0, WL = 5, tANPD = WL − 1 = 4)
ct
u
od
Preliminary Data Sheet E0966E60 (Ver. 6.0)
124
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
ZQ Calibration
L
EO
ZQ calibration command is used to calibrate DRAM RON and ODT values over PVT. DDR3 SDRAM needs longer
time to calibrate RON and ODT at initialization and relatively smaller time to perform periodic calibrations.
ZQCL command is used to perform the initial calibration during power-up initialization sequence. This command may
be issued at any time by the controller depending on the system environment. ZQCL command triggers the
calibration engine inside the DRAM and once calibration is achieved the calibrated values are transferred from
calibration engine to DRAM I/O which gets reflected as updated RON and ODT values.
The first ZQCL command issued after reset is allowed a timing period of tZQinit to perform the full calibration and the
transfer of values. All other ZQCL commands except the first ZQCL command issued after RESET is allowed a
timing period of tZQoper.
ZQCS command is used to perform periodic calibrations to account for VT variations. A shorter timing window is
provided to perform the calibration and transfer of values as defined by timing parameter tZQCS.
No other activities must be performed on the DRAM channel by the controller for the duration of tZQinit, tZQoper or
tZQCS. The quiet time on the DRAM channel helps in accurate calibration of RON and ODT. Once DRAM calibration
is achieved the DRAM should disable ZQ current consumption path to reduce power.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self-refresh. Upon selfrefresh exit, DDR3 SDRAM will not perform an IO calibration without an explicit ZQ calibration command. The
earliest possible time for ZQ Calibration command (short or long) after self-refresh exit is tXS.
In dual rank systems that share the ZQ resistor between devices, the controller must not allow any overlap of
tZQoper or tZQinit or tZQCS between ranks.
CK
A10
Address
Valid
NOP/DESL
ZQCS
NOP/DESL
A10 = H
A10 = L
X
X
tZQinit or tZQ oper
DQ Bus*2
Hi-Z
Valid
u
od
CKE
ZQCL
Pr
Command
tZQCS
Activities
Hi-Z
Activities
Notes: 1. ODT must be disabled via ODT signal or MRS during calibration procedure.
2. All device connected to DQ bus should be High impedance during calibration.
ZQ Calibration
ZQ External Resistor Value and Tolerance
DDR3 SDRAM has a 240Ω, ±1% tolerance external resistor connecting from the DDR3 SDRAM ZQ pin to ground.
The resister can be used as single DRAM per resistor.
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
125
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Package Drawing
78-ball FBGA
Solder ball: Lead free (Sn-Ag-Cu)
Unit: mm
9.8 ± 0.1
0.2 S B
10.8 ± 0.1
L
EO
INDEX MARK
Pr
0.2 S A
0.2 S
1.20 max.
S
φ0.12 M S A B
78-φ0.45 ± 0.05
A
9.6
0.8
B
u
od
0.35 ± 0.05
0.1 S
ct
INDEX MARK
1.6 0.8
6.4
ECA-TS2-0159-01
Preliminary Data Sheet E0966E60 (Ver. 6.0)
126
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
96-ball FBGA
Solder ball: Lead free (Sn-Ag-Cu)
Unit: mm
9.8 ± 0.1
0.2 S B
INDEX MARK
14.0 ± 0.1
L
EO
0.2 S A
Pr
0.2 S
1.20 max.
S
0.35 ± 0.05
0.1 S
φ0.12 M S A B
96-φ0.45 ± 0.05
u
od
0.4
A
ct
INDEX MARK
12.0
0.8
B
1.6 0.8
6.4
ECA-TS2-0166-01
Preliminary Data Sheet E0966E60 (Ver. 6.0)
127
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDJ5304BASE, EDJ5308BASE, EDJ5316BASE.
Type of Surface Mount Device
EDJ5304BASE, EDJ5308BASE: 78-ball FBGA < Lead free (Sn-Ag-Cu) >
EDJ5316BASE: 96-ball FBGA < Lead free (Sn-Ag-Cu) >
L
EO
ct
u
od
Pr
Preliminary Data Sheet E0966E60 (Ver. 6.0)
128
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
L
EO
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Pr
u
od
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
ct
Preliminary Data Sheet E0966E60 (Ver. 6.0)
129
EDJ5304BASE, EDJ5308BASE, EDJ5316BASE
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
L
EO
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Be aware that this product is for use in typical electronic equipment for general-purpose applications.
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Usage environment]
Pr
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
Usage in environments with special characteristics as listed below was not considered in the design.
Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in
environments with the special characteristics listed below.
u
od
Example:
1) Usage in liquids, including water, oils, chemicals and organic solvents.
2) Usage in exposure to direct sunlight or the outdoors, or in dusty places.
3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL 2 , H 2 S, NH 3 ,
SO 2 , and NO x .
4) Usage in environments with static electricity, or strong electromagnetic waves or radiation.
5) Usage in places where dew forms.
6) Usage in environments with mechanical vibration, impact, or stress.
7) Usage near heating elements, igniters, or flammable items.
ct
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0706
Preliminary Data Sheet E0966E60 (Ver. 6.0)
130