ONSEMI MBRAF360T3G

MBRAF360T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
•
•
•
•
•
•
Low Profile Package for Space Constrained Applications
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
150°C Operating Junction Temperature
Guard−Ring for Stress Protection
These are Pb−Free and Halide−Free Devices
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SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
60 VOLTS
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
SMA−FL
CASE 403AA
STYLE 6
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
•
MARKING DIAGRAM
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
AYWW
RAHG
G
RAH
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBRAF360T3G
SMA−FL
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 0
1
Publication Order Number:
MBRAF360/D
MBRAF360T3G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
IF(AV)
3.0 @ TL = 100°C
4.0 @ TL = 80°C
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 125°C
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
Storage Temperature Range
Tstg
− 65 to +150
°C
Operating Junction Temperature (Note 1)
TJ
− 65 to +150
°C
A
6
A
125
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
RqJL
25
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
90
°C/W
Symbol
Value
Unit
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 3.0 A, TJ = 25°C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR
V
0.740
mA
0.15
10
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
10
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10
TJ = 150°C
TJ = 175°C
1
TJ = 100°C
TJ = 25°C
0.1
0.01
TJ = 175°C
1
0.1
TJ = −40°C
0.0
0.2
0.4
0.6
0.01
0.8
TJ = 150°C
TJ = 25°C
TJ = 100°C
TJ = −40°C
0.0
0.2
0.4
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
MBRAF360T3G
IR, INSTANTANEOUS REVERSE
CURRENT (A)
1.0E+00
1.0E−01
TJ = 175°C
1.0E−02
TJ = 150°C
1.0E−03
TJ = 100°C
1.0E−04
1.0E−05
TJ = 25°C
1.0E−06
1.0E−07
0
10
20
30
40
50
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
60
Figure 3. Typical Reverse Current
1.0E−01
TJ = 175°C
TJ = 150°C
1.0E−02
TJ = 100°C
1.0E−03
1.0E−04
TJ = 25°C
1.0E−05
1.0E−06
0
10
20
30
40
50
60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
1000
TJ = 25°C
C, CAPACITANCE (pF)
IR, INSTANTANEOUS REVERSE
CURRENT (A)
1.0E+00
100
10
0
10
20
40
30
50
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Capacitance
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3
60
70
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
MBRAF360T3G
100
10
1
50% Duty Cycle
10%
20%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 6. Typical Transient Thermal Response, Junction−to−Ambient
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4
100
1000
MBRAF360T3G
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE O
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
D
DIM
A
b
c
D
E
E1
L
TOP VIEW
A
c
RECOMMENDED
SOLDER FOOTPRINT*
C
SIDE VIEW
SEATING
PLANE
1.76
2X
MILLIMETERS
MIN
MAX
0.90
1.10
1.25
1.65
0.15
0.30
2.40
2.80
4.80
5.40
4.00
4.60
0.70
1.10
5.56
b
1.30
2X
L
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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For additional information, please contact your local
Sales Representative
MBRAF360/D